QPA1001EVB [QORVO]
3.1 â 3.5 GHz 60 Watt GaN Power Amplifier;
| 型号： | QPA1001EVB |
| 厂家： | 
Qorvo |
| 描述： | 3.1 â 3.5 GHz 60 Watt GaN Power Amplifier |
| 文件： | 总17页 (文件大小：741K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Product Description
Qorvo’s QPA1001 is a high-power, S-band amplifier
fabricated on Qorvo’s QGaN25 0.25um GaN on SiC
production process. Covering 3.1-3.5 GHz, the QPA1001
typically provides 48 dBm of saturated output power and 22
dB of large-signal gain while achieving 54 % power-added
efficiency.
The QPA1001 can also support a variety of operating
conditions to best support system requirements. With good
thermal properties, it can support a range of bias voltages
and will perform well under pulse applications. The
QPA1001 is matched to 50 ohms with integrated DC
blocking caps on both I/O ports. The QPA1001 utilizes a
plastic QFN overmolded package, which is ideal for use in
both commercial and military radar systems.
Product Features
• Frequency Range: 3.1 – 3.5 GHz
• Pout: 48 dBm (PIN = 26 dBm, 3.3 GHz)
• Large Signal Gain: 22 dB (PIN = 26 dBm)
• PAE: 54 % (PIN = 26 dBm)
Lead-free and RoHS compliant.
• Bias: VD = 30 V, IDQ = 200 mA
• Plastic Overmold QFN Package
• Package Dimensions: 7.0 x 7.0 x 0.85 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots
for more details.
Functional Block Diagram
48 47 46 45 44 43 42 41 40 39 38 37
Applications
36
1
2
• Military Radar
35
34
• Commercial Radar
3
33
4
32
5
31 RF Out
RF In
RF In
6
Ordering Information
30 RF Out
7
29
28
27
26
25
8
Part
QPA1001
Description
9
3.1–3.5 GHz 60 W GaN Power
Amplifier (10 pcs.)
10
11
12
QPA1001TR7
QPA1001EVB
7” Reel – 500 pcs.
QPA1001 Evaluation Board
13 14 15 16 17 18 19 20 21 22 23 24
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Recommended Operating Conditions
Absolute Maximum Ratings
Parameter
Valueꢀ/ꢀRange
40 V
Parameter
Drain Voltage (VD)
Value
30 V
Drain Voltage (VD)
Drain Current (ID1/ID2)
Gate Voltage Range
0.80/5.70 A
−6 to 1 V
Drain Current (quiescent, IDQ
)
200 mA
Drain Current (under drive, ID)
Gate Voltage Range (VG)
4.5 A
Gate Current (IG)
−2.8 to −2.0 V
−40 to 85ꢀ°C
See IG plot, pg. 10
95 W
1
Dissipated Power (PDISS
)
Operating Temperature Range
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Input Power (VD=30V, 50 Ω, 85 °C)
Input Power (4:1 VSWR, 85 °C)
Storage Temperature
31 dBm
28 dBm
−55 to 150 °C
Note:
1 TBASE = 85 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions is
not implied.
Electrical Specifications
Test conditions, unless otherwise noted: 25 °C, VD = 30 V, IDQ = 200 mA, Pulse Width = 100 us, Duty Cycle = 10%
Parameter
Operational Frequency Range
Min
3.1
Typ
3.3
Max
3.5
Units
GHz
Frequency = 3.1 GHz
48.0
48.7
48.0
53.9
54.1
52.7
25.5
25.3
25.6
16.3
12.5
10.4
14.2
9.8
Output Power @ PIN = 26ꢀdBm Frequency = 3.3 GHz
Frequency = 3.5 GHz
dBm
%
Frequency = 3.1 GHz
Power Added Efficiency
Frequency = 3.3 GHz
@ PIN = 26ꢀdBm
Frequency = 3.5 GHz
Frequency = 3.1 GHz
Small Signal Gain
Input Return Loss
Output Return Loss
Frequency = 3.3 GHz
Frequency = 3.5 GHz
Frequency = 3.1 GHz
Frequency = 3.3 GHz
Frequency = 3.5 GHz
Frequency = 3.1 GHz
Frequency = 3.3 GHz
Frequency = 3.5 GHz
dB
dB
dB
8.6
Output Power Temperature Coefficient
Recommended Operating Drain Voltage
−0.001
30
dBm/°C
V
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA, PW = 100 us, Duty Cycle = 10%
Output Power vs. Freq. vs. Temp.
PIN = 26 dBm
Output Power vs. Freq. vs. Input Power
50
49
48
47
46
45
50
49
48
47
46
45
22 dBm
23 dBm
24 dBm
25 dBm
26 dBm
-40 C
+25 C
+85 C
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.6
3.6
3.0
3.1
3.2
3.3
3.4
3.5
3.6
Frequency (GHz)
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Input Power
Power Added Eff. vs. Freq. vs. Temp.
65
60
55
50
45
40
35
65
60
55
50
45
40
35
PIN = 26 dBm
22 dBm
23 dBm
24 dBm
25 dBm
26 dBm
-40 C
+25 C
+85 C
3.0
3.1
3.2
3.3
3.4
3.5
3.0
3.1
3.2
3.3
3.4
3.5
3.6
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
Drain Current vs. Freq. vs. Input Power
5.5
5.0
4.5
4.0
3.5
3.0
2.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
PIN = 26 dBm
22 dBm
23 dBm
24 dBm
25 dBm
26 dBm
-40 C
3.2
+25 C
3.3
+85 C
3.4
3.0
3.1
3.5
3.0
3.1
3.2
3.3
3.4
3.5
3.6
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. D, August 2020 | Subject to change without notice
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA, PW = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. Freq.
PAE vs. Input Power vs. Freq.
50
45
40
35
30
25
20
70
60
50
40
30
20
10
0
3.1 GHz
3.3 GHz
3.5 GHz
3.1 GHz
3.3 GHz
3.5 GHz
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Drain Current vs. Input Power vs. Freq.
Gain vs. Input Power vs. Freq.
35
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.1 GHz
3.3 GHz
3.5 GHz
3.1 GHz
3.3 GHz
3.5 GHz
0
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Gate Current vs. Input Power vs. Freq.
12
10
8
6
3.1 GHz
3.3 GHz
3.5 GHz
4
2
0
-2
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Data Sheet Rev. D, August 2020 | Subject to change without notice
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA, PW = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. Temp.
Freq. = 3.3 GHz
PAE vs. Input Power vs. Temp.
Freq. = 3.3 GHz
50
45
40
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
-40 C
+25 C
+85 C
0
-40 C +25 C +85 C
-5
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Freq. = 3.3 GHz
Gain vs. Input Power vs. Temp.
Freq. = 3.3 GHz
35
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40 C
-40 C
+25 C
+85 C
+25 C
+85 C
0
-5
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Gate Current vs. Input Power vs. Temp.
Freq. = 3.3 GHz
24
22
20
18
16
14
12
10
8
-40 C
+25 C
+85 C
6
4
2
0
-2
2
4
6
8
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Data Sheet Rev. D, August 2020 | Subject to change without notice
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, IDQ = 200 mA
Output Power vs. Freq. vs. Temp.
VD = 28V, PW = 100us, DC = 10%, PIN = 25 dBm
Output Power vs. Freq. vs. Temp.
VD = 30V, PW = 300us, DC = 20%, PIN = 26 dBm
50
50
49
48
47
46
45
49
48
47
-40 C
-40 C
46
+25 C
+25 C
+85 C
+85 C
45
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.6
3.6
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.6
3.6
Frequency (GHz)
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Temp.
Power Added Eff. vs. Freq. vs. Temp.
65
60
55
50
45
40
35
65
60
55
50
45
40
35
VD = 28V, PW = 100 us, DC = 1-%, PIN = 25 dBm
VD = 30V, PW = 300 us, DC = 20%, PIN = 26 dBm
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
3.0
3.1
3.2
3.3
3.4
3.5
3.0
3.1
3.2
3.3
3.4
3.5
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
Drain Current vs. Freq. vs. Temp.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
VD = 28V, PW = 100us, DC = 10%, PIN = 25 dBm
VD = 30V, PW = 300us, DC = 20%, PIN = 26 dBm
-40 C
3.2
+25 C
3.3
+85 C
3.4
-40 C
3.2
+25 C
3.3
+85 C
3.4
3.0
3.1
3.5
3.0
3.1
3.5
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Performance Plotsꢀ–ꢀ Harmonics (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, PW = 100 us, Duty Cycle = 10%
2nd Harmonic vs. POUT vs. Freq.
VD = 30 V, IDQ = 200 mA
3rd Harmonic vs. POUT vs. Freq.
-10
-15
-20
-25
-30
-35
-40
-45
-50
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
VD = 30 V, IDQ = 200 mA
3.1 GHz
3.3 GHz
3.5 GHz
3.1 GHz
3.3 GHz
3.5 GHz
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
2nd Harmonic vs. POUT vs. Temp.
VD = 30 V, IDQ = 200 mA, F0 = 3.3 GHz
3rd Harmonic vs. POUT vs. Temp.
VD = 30 V, IDQ = 200 mA, F0 = 3.3 GHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
−40 C
+25 C
+85 C
−40 C
+25 C
+85 C
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
2nd Harmonic vs. POUT vs. VD
3rd Harmonic vs. POUT vs. VD
-10
-15
-20
-25
-30
-35
-40
-45
-50
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
IDQ = 200 mA, F0 = 3.3 GHz
IDQ = 200 mA, F0 = 3.3 GHz
28 V
30 V
28 V
30 V
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
35
30
25
20
15
10
5
30
28
26
24
22
20
18
16
14
12
10
28 V
30 V
32 V
3.8
-40 C
3.2
+25 C
3.4
+85 C
3.6 3.8
0
2.6
2.8
2.8
2.8
3.0
4.0
4.0
4.0
4.2
4.2
4.2
2.6
2.8
3.0
3.2
3.4
3.6
4.0
4.2
4.2
4.2
Frequency (GHz)
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
Input RL vs. Frequency vs. VD
0
0
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
-40 C
3.2
+25 C
3.4
+85 C
3.6 3.8
28 V
30 V
32 V
3.8
2.6
3.0
2.6
2.8
3.0
3.2
3.4
3.6
4.0
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
Output RL vs. Frequency vs. VD
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
-40 C
3.2
+25 C
3.4
+85 C
3.6 3.8
28 V
30 V
32 V
3.8
2.6
3.0
2.6
2.8
3.0
3.2
3.4
3.6
4.0
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA
Gain vs. Frequency vs. IDQ
Input RL vs. Freq. vs. IDQ
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
100 mA
3.2
200 mA
3.4
300 mA
3.8
100 mA
3.2
200 mA
3.4
300 mA
3.8
0
2.6
2.8
3.0
3.6
4.0
4.2
2.6
2.8
3.0
3.6
4.0
4.2
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. IDQ
0
-5
-10
-15
-20
-25
100 mA
3.4
200 mA
3.8
300 mA
4.0
-30
2.6
2.8
3.0
3.2
3.6
4.2
Frequency (GHz)
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
Tbase = 85°C, VD = 30 V, IDQ = 200 mA, Freq = 3.32
GHz, ID_Drive = 4.46 A, PIN = 26 dBm, POUT = 48.6
dBm, PDISS = 61.6 W, PW = 100 us, DC = 10%
0.519
°C/W
Channel Temperature (TCH) (Under RF drive)
117
°C
Thermal Resistance (θJC) (1)
Tbase = 85°C, VD = 30 V, IDQ = 200 mA, Freq = 3.32
GHz, ID_Drive = 4.31 A, PIN = 26 dBm, POUT = 48.4 dBm,
PDISS = 60.5 W, PW = 300 us, DC = 20%
0.744
130
°C/W
°C
Channel Temperature (TCH) (Under RF drive)
Notes:
1. Thermal resistance is measured to back of package.
2. IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability
Estimates
Power Dissipation & Maximum Gate Current
Dissipated Power vs. Freq. vs. VD
PIN = 25 dBm
80
75
70
65
60
55
50
45
40
28V 100us 85C
30V 100us 85C
30V 300us 85C
32V 100us 85C
35
30
3.0
3.1
3.2
3.3
3.4
3.5
3.6
Frequency (GHz)
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Applications Circuit
VG2
R7
C8
C9
R4
10 Ω
0 Ω
0.01 uF
1000 pF
C7
R8
VG1
C3
1000 pF
10 uF
10 Ω
R6
0 Ω
VD2
C12
1000 pF
C11
0.01 uF
VD1
48 46 44
38
C6
1000 pF
R10
10 Ω
6,7
30,31
RF In
RF Out
R19
10 Ω
C16
C23
0.01 uF
1000 pF
C22
1000 pF
13 15 17
23
VD1
R17
VD2
C13
1000 pF
0 Ω
R16
10 Ω
C21
10 uF
VG1
R13
10 Ω
C20
0.01 uF
C19
1000 pF
R18
0 Ω
VG2
Notes:
1. VG and VD must be biased from both sides (top and bottom).
Bias Up Procedure
1. Set ID limit to 6000mA, IG limit to 40mA
2. Set VG to −6.0 V
Bias Down Procedure
1. Turn off RF supply
2. Reduce VG to −6.0V. Ensure IDQ ~ 0mA
3. Set VD to 0ꢀV
3. Set VD +25 V
4. Adjust VG more positive until IDQ = 200mA (VG ~
−2.8 V Typical)
4. Turn off VD supply
5. Turn off VG supply
5. Apply RF signal
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Evaluation Board and Mounting Detail
C7
R7
C11
R10
C12
R6
R4
C8
R8
C9
C6
C3
C13
C16
C19
R16
C20
R13
R17
C22
R19
C23
R18
C21
Mounting Detail
RF Layer is 0.008” thick Rogers Corp. RO40003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector 1092-02A-5.
Bill of Materials
Ref. Des.
Component
Value
Manuf. Part Number
C7, C21
Surface Mount Cap.
CAP, 1206, 10uF, 20%, 50V, 20%, X5R
Various
C3, C6, C9, C12, C13,
C16, C19, C22
Surface Mount Cap.
CAP, 0402, 1000pF, 10%, 100V, X7R
Various
C8, C11, C20, C23
R8, R10, R16, R19
R4, R13
Surface Mount Cap.
Surface Mount Res.
Surface Mount Res.
Surface Mount Res.
CAP, 0402, 0.01uF, ±10%, 50V, X7R
RES, 10 OHM ± 5% 0402
Various
Various
Various
Various
RES, 10 OHM 1/10W ± 5% 0603
RES, 0 OHM 5% 0603
R6, R7,ꢀR16, R18
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Mechanical Information
NOTES:
PACKAGE METAL BASE AND LEADS ARE GOLD PLATED.
PART IS PLASTIC MOLD ENCAPSULATED.
PART MARKING:
QPA1001: PART NUMBER
YY: PART ASSY YEAR
WW: PART ASSY WEEK
MXXX: LOT NUMBER
DIMENSIONS IN MM
Pin Description
Pin Number
Symbol
Description
1-5, 8-12, 14, 16, 18-22, 24-29,
32-37, 39-43, 45, 47
NC
No connection. Can be grounded on PCB if desired.
50 Ohm RF input. Pad is capacitively coupled to block on-chip
DC voltages.
1st Stage Gate Voltage; bias network is required; must be biased
from both sides (VG1 and VG2 can be tied together in application)
1st Stage Drain Voltage; bias network is required; must be biased
from both sides (VD1 and VD2 can be tied together in application)
2nd Stage Gate Voltage; bias network is required; must be biased
from both sides (VG1 and VG2 can be tied together in application)
6, 7
RF Input
VG1
13, 48
15, 46
17, 44
23, 38
VD1
VG2
2nd Stage Drain Voltage; bias network is required; must be biased
from both sides (VD1 and VD2 can be tied together in application)
VD2
50 Ohm RF output. Pad is capacitively coupled to block on-chip
DC voltages.
30, 31
RF Output
GND
49 (center pad)
Ground connection.
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Recommended Soldering Temperature Profile
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Tape and Reel Information – Carrier and Cover Tape Dimensions
Feature
Measure
Symbol
Size (in)
0.285
0.285
0.043
0.472
0.078
0.295
0.524
0.630
Size (mm)
7.25
Length
A0
B0
K0
P1
P2
F
Width
7.25
Cavity
Depth
1.10
Pitch
12.00
2.00
Cavity to Perforation - Length Direction
Centerline Distance
Cavity to Perforation - Width Direction
7.50
Cover Tape
Carrier Tape
Width
Width
C
13.3
W
16.0
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Tape and Reel Information – Reel Dimensions
Standard T/R size = 500 pieces on a 7” reel.
Feature
Measure
Symbol
Size (in)
6.969
0.874
0.661
2.283
0.512
0.079
0.787
Size (mm)
177.0
22.2
Diameter
A
W2
W1
N
Flange
Thickness
Space Between Flange
Outer Diameter
Arbor Hole Diameter
Key Slit Width
Key Slit Diameter
16.8
58.0
C
13.0
Hub
B
2.0
D
20.0
Tape and Reel Information – Tape Length and Label Placement
Notes:
1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A.
2. Labels are placed on the flange opposite the sprockets in the carrier tape.
Data Sheet Rev. D, August 2020 | Subject to change without notice
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QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharge Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
Class 0B (≤200V) ANSI/ESD/JEDEC JS-001
Caution!
ESD-Sensitive Device
TBD
ANSI/ESD/JEDEC JS-002
IPC/JEDEC J-STD-020
Level 3
Solderability
Compatible with the latest version of J-STD-020 Lead free solder, 260 °C. The use of no-clean solder to avoid washing after soldering
is recommended. Plating is Ni-Pd-Au.
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical
and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
• Qorvo Green
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein, or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
© 2020 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be reproduced or
distributed, in whole or in part, without the express written consent of Qorvo US, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. D, August 2020 | Subject to change without notice
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