QPA1010PCB4B01 [QORVO]
zzzzzzzzz7.9 â 11.0 GHz 15 W GaN Power Amplifier;
| 型号： | QPA1010PCB4B01 |
| 厂家： | 
Qorvo |
| 描述： | zzzzzzzzz7.9 â 11.0 GHz 15 W GaN Power Amplifier |
| 文件： | 总26页 (文件大小：1305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Product Description
Qorvo’s QPA1010 is a X-band high power MMIC amplifier
fabricated on Qorvo’s production 0.15um GaN on SiC
process (QGaN15). The QPA1010 operates from 7.9 – 11
GHz and typically provides 15 W saturated output power
with power-added efficiency of 38% and large-signal gain
of 18 dB. This combination of wideband performance
provides the flexibility designers are looking for to improve
system performance while reducing size and cost.
QPA1010 can also support a variety of operating conditions
to best support system requirements. With good thermal
properties, it can support a range of bias voltages and will
perform well under both CW and pulse operations.
24-Lead 4.5ꢀxꢀ5.0ꢀxꢀ1.72ꢀmm Air Cavity Laminate Package
The QPA1010 is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying system
integration. The wideband performance and operational
flexibility allow it support satellite communication and data
links, as well as, military and commercial radar systems.
Product Features
Frequency Range: 7.9ꢁ–ꢁ11ꢁGHz
POUT: 42ꢁdBm at PIN = 24ꢁdBm
PAE: 38ꢁ% at PIN = 24ꢁdBm
Lead-free and RoHS compliant.
Large Signal Gain: 18 dB at PIN = 24 dBm
Small Signal Gain: 25 dB
Integrated Power Detector
Bias: VD = 24ꢁV, IDQ = 600 mA
Pulsed VD: PW =100 µS, DC = 10%
Package Dimensions: 4.5 x 5.0 x 1.72ꢁmm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
Satellite Communications
Data Links
Military and Commercial Radar
Ordering Information
Part No.
Description
QPA1010
7.9ꢁ–ꢁ11ꢁGHz 15ꢁW GaN Power Amplifier
Samples (2 pcs. pack)
Evaluation Board
QPA1010S2
QPA1010PCB4B01
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 1 of 26 -
www.qorvo.com
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain Voltage (VD)
Valueꢀ/ꢀRange
29.5 V
Parameter
Drain Voltage (VD)
Valueꢀ/ꢀRange
24 V
Gate Voltage Range (VG)
−8 to 0V
Drain Current (IDQ
Gate Voltage Range (VG)
Temperature (TBASE
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
)
600 mA
Drain Current (I D1/ID2)
672 mA / 1440 mA
See chart, pg. 21
38 W
-2.9 to -1.5 V
Gate Current (IG)
)
-40 to +85 °C
Power Dissipation (PDISS), 85°C, CW
Input Power (PIN), CW, 50Ω,
VD=28 V, IDQ=600 mA, 85 °C
Input Power (PIN), CW, VSWR 3:1,
VD=28 V, IDQ=600 mA 85 °C
30 dBm
30 dBm
Mounting Temperature (30 seconds)
260 °C
Storage Temperature
−55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 2 of 26 -
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Electrical Specifications
Parameter
Min
Typ
Max
Units
Operational Frequency Range
7.9
11
GHz
Output Power (PIN = 24ꢁdBm)
7.9 GHz
9.0 GHz
11.0 GHz
12.0 GHz
41.7
42.3
41.8
41.0
dBm
dBm
dBm
dBm
Power Added Efficiency (PIN = 24ꢁdBm)
7.9 GHz
9.0 GHz
11.0 GHz
12.0 GHz
37.7
38.6
37.3
40.1
%
%
%
%
3rd Order Intermodulation Level
(POUT/Tone= 35 dBm)
7.9 GHz
10.0 GHz
11.0 GHz
12.0 GHz
−21
−21
−22
−21
dBc
dBc
dBc
Small Signal Gain
Input Return Loss
Output Return Loss
7.9 GHz
9.0 GHz
11.0 GHz
12.0 GHz
27.9
27.8
26.0
21.1
dB
dB
dB
dB
7.9 GHz
9.0 GHz
11.0 GHz
12.0 GHz
17
22
21
10
dB
dB
dB
dB
7.9 GHz
9.0 GHz
11.0 GHz
12.0 GHz
11
11
18
7
dB
dB
dB
dB
Output Power Temperature Coefficient (25ꢁ–ꢁ85 °C)
−0.003
dB/°C
(PIN = 24ꢁdBm)
Small Signal Gain Temperature Coefficient (25ꢁ–ꢁ85 °C)
Gate Leakage (Vd=10V, Vg=−4.0V, all gates together)
Recommended Voltage Operations
−0.044
−3.0
24
dB/°C
mA
V
−6.6
−0.0001
28
Test conditions, unless otherwise noted: 25 °C, Pulsed VD: PW = 100 µS, DC = 10%, VD = 24 V, IDQ = 600 mA, VG = −1.8 V Typical
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 3 of 26 -
www.qorvo.com
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Power Added Eff. vs. Frequency vs. Temp.
Output Power vs. Frequency vs. Temp.
44
44
VD = 24 V, IDQ = 600 mA, PIN = 24 dBm
VD = 24 V, IDQ = 600 mA, PIN = 24 dBm
42
43
Pulsed VD : PW = 100 µS, DC = 10%
40
38
36
34
32
42
41
- 40 C
+25 C
+85 C
40
39
38
- 40 C
+25 C
+85 C
Pulsed VD : PW = 100 µS, DC = 10%
30
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
Gate Current vs. Frequency vs. Temp.
2200
2000
1800
1600
1400
1200
1000
800
2
VD = 24 V, IDQ = 600 mA, PIN = 24 dBm
VD = 24 V, IDQ = 600 mA, PIN = 24 dBm
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
-0.2
-0.4
Pulsed VD : PW = 100 µS, DC = 10%
Pulsed VD : PW = 100 µS, DC = 10%
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Power Added Eff. vs. Frequency vs. VD
Output Power vs. Frequency vs. VD
44
43
42
41
40
39
38
37
60
55
50
45
40
35
30
25
20
PIN = 24 dBm, IDQ = 600 mA, Temp. = 25 °C
PIN = 24 dBm, IDQ = 600 mA, Temp. = 25 °C
Pulsed VD : PW = 100 µS, DC = 10%
Pulsed VD : PW = 100 µS, DC = 10%
18 V
20 V
22 V
24 V
26 V
28 V
18 V
20 V
22 V
24 V
26 V
28 V
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 4 of 26 -
www.qorvo.com
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Drain Current. vs. Frequency vs. VD
Gate Current. vs. Frequency vs. VD
1.2
2400
PIN = 24 dBm, IDQ = 600 mA, Temp. = 25 °C
PIN = 24 dBm, IDQ = 600 mA, Temp. = 25 °C
2200
1.0
Pulsed VD : PW = 100 µS, DC = 10%
2000
1800
1600
1400
1200
0.8
0.6
0.4
0.2
0.0
1000
800
Pulsed VD : PW = 100 µS, DC = 10%
18 V 20 V 22 V 24 V 26 V
28 V
18 V
20 V
22 V
24 V
26 V
28 V
-0.2
600
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Power Added Eff. vs. Frequency vs. IDQ
Output Power vs. Frequency vs. IDQ
43.0
42.5
42.0
41.5
41.0
40.5
40.0
44
PIN = 24 dBm, VD = 24 V, Temp. = 25 °C
PIN = 24 dBm, VD = 24 V, Temp. = 25 °C
42
40
38
36
34
32
30
300 mA
600 mA
300 mA
600 mA
Pulsed VD : PW = 100 µS, DC = 10%
Pulsed VD : PW = 100 µS, DC = 10%
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Drain Current. vs. Frequency vs. IDQ
Gate Current. vs. Frequency vs. IDQ
0.6
0.5
2200
2000
1800
1600
1400
1200
1000
800
PIN = 24 dBm, VD = 24 V, Temp. = 25 °C
PIN = 24 dBm, VD = 24 V, Temp. = 25 °C
Pulsed VD : PW = 100 µS, DC = 10%
0.4
0.3
0.2
0.1
0.0
-0.1
300 mA
600 mA
300 mA
600 mA
Pulsed VD : PW = 100 µS, DC = 10%
600
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 5 of 26 -
www.qorvo.com
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Output Power vs. Input Power vs. Temp.
PAE vs. Input Power vs. Temp.
46
50
VD = 24 V, IDQ = 600 mA, Freq. = 9 GHz
VD = 24 V, IDQ = 600 mA, Freq. = 9 GHz
44
42
40
38
36
34
32
30
28
26
24
45
40
35
30
25
-40C
+25C
+85C
-40C
+25C
+85C
20
15
10
5
Pulsed VD : PW = 100 µS, DC = 10%
Pulsed VD : PW = 100 µS, DC = 10%
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Gate Current vs. Input Power vs. Temp.
VD = 24 V, IDQ = 600 mA, Freq. = 9 GHz
Drain Current vs. Input Power vs. Temp.
2200
2000
1800
1600
1400
1200
1000
800
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
VD = 24 V, IDQ = 600 mA, Freq. = 9 GHz
Pulsed VD : PW = 100 µS, DC = 10%
-40C
+25C
+85C
-40C
+25C
+85C
600
Pulsed VD : PW = 100 µS, DC = 10%
400
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Output Power vs. Input Power vs. Freq.
PAE vs. Input Power vs. Freq.
46
44
42
40
38
36
34
32
30
28
26
50
45
40
35
30
25
20
15
10
5
VD = 24 V, IDQ = 600 mA, Temp. = 25 °C
VD = 24 V, IDQ = 600 mA, Temp. = 25 °C
7.9 GHz
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
7.9 GHz
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
Pulsed VD : PW = 100 µS, DC = 10%
Pulsed VD : PW = 100 µS, DC = 10%
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 6 of 26 -
www.qorvo.com
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Drain Current vs. Input Power vs. Freq.
Gate Current vs. Input Power vs. Freq.
2200
5
VD = 24 V, IDQ = 600 mA, Temp. = 25 °C
VD = 24 V, IDQ = 600 mA, Temp. = 25 °C
2000
4
Pulsed VD : PW = 100 µS, DC = 10%
1800
1600
3
7.9 GHz
1400
1200
1000
800
7.9 GHz
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
8.0 GHz
2
9.0 GHz
10.0 GHz
11.0 GHz
1
0
600
400
Pulsed VD : PW = 100 µS, DC = 10%
200
-1
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Power Added Eff. vs. Input Power vs. VD
Output Power vs. Input Power vs. VD
47
45
43
41
39
37
35
33
31
29
27
25
23
60
IDQ = 600 mA, Freq. = 9 GHz, Temp. = 25 °C
IDQ = 600 mA, Freq. = 9 GHz, Temp. = 25 °C
55
50
45
40
35
30
25
20
15
10
5
18 V
20 V
22 V
24 V
26 V
28 V
Pulsed VD : PW = 100 µS, DC = 10%
Pulsed VD : PW = 100 µS, DC = 10%
18 V
6
20 V
22 V
24 V
26 V
28 V
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Drain Current vs. Input Power vs. VD
Gate Current vs. Input Power vs. VD
2200
2000
1800
1600
1400
1200
1000
800
5
4
IDQ = 600 mA, Freq. = 9 GHz, Temp. = 25 °C
IDQ = 600 mA, Freq. = 9 GHz, Temp. = 25 °C
Pulsed VD : PW = 100 µS, DC = 10%
3
2
1
600
Pulsed VD : PW = 100 µS, DC = 10%
0
400
18 V
20 V
22 V
24 V
26 V
28 V
18 V
20 V
22 V
24 V
26 V
28 V
200
-1
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 7 of 26 -
www.qorvo.com
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Power Added Eff. vs. Frequency vs. Temp.
Output Power vs. Frequency vs. Temp.
44
50
VD = 24 V, IDQ = 600 mA, PIN = 24 dBm
VD = 24 V, IDQ = 600 mA, PIN = 24 dBm
43
45
42
41
40
39
40
35
30
25
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
38
20
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
Gate Current vs. Frequency vs. Temp.
2200
2000
1800
1600
1400
1200
1000
800
16
14
12
10
8
VD = 24 V, IDQ = 600 mA, PIN = 24 dBm
VD = 24 V, IDQ = 600 mA, PIN = 24 dBm
6
- 40 C
+25 C
+85 C
4
2
0
- 40 C
+25 C
+85 C
-2
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
VDELTA vs. Frequency vs. Temp.
5
4
3
2
1
0
VD = 24 V, IDQ = 600 mA, PIN = 24 dBm
- 40 C
+25 C
+85 C
VDELTA = VREF - VDET
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 8 of 26 -
www.qorvo.com
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Power Added Eff. vs. Frequency vs. VD
Output Power vs. Frequency vs. VD
45
55
PIN = 24 dBm, IDQ = 600 mA, Temp. = 25 °C
PIN = 24 dBm, IDQ = 600 mA, Temp. = 25 °C
44
50
43
42
41
40
39
45
40
35
30
18 V
20 V
22 V
24 V
26 V
28 V
18 V
20 V
22 V
24 V
26 V
28 V
38
25
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Drain Current. vs. Frequency vs. VD
Gate Current. vs. Frequency vs. VD
6
2200
2000
1800
1600
1400
1200
1000
800
PIN = 24 dBm, IDQ = 600 mA, Temp. = 25 °C
PIN = 24 dBm, IDQ = 600 mA, Temp. = 25 °C
5
4
3
2
1
0
-1
18 V
20 V
22 V
24 V
26 V
28 V
18 V
20 V
22 V
24 V
26 V
28 V
-2
600
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
VDELTA vs. Frequency vs. VD
5
4
3
2
1
0
PIN = 24 dBm, IDQ = 600 mA, Temp. = 25 °C
18 V
20 V
22 V
24 V
26 V
28 V
VDELTA = VREF - VDET
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 9 of 26 -
www.qorvo.com
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Power Added Eff. vs. Frequency vs. IDQ
Output Power vs. Frequency vs. IDQ
43.0
50
PIN = 24 dBm, VD = 24 V, Temp. = 25 °C
PIN = 24 dBm, VD = 24 V, Temp. = 25 °C
42.5
45
42.0
41.5
41.0
40
35
300 mA
600 mA
30
25
300 mA
600 mA
40.5
40.0
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Drain Current. vs. Frequency vs. IDQ
Gate Current. vs. Frequency vs. IDQ
2200
2000
1800
1600
1400
1200
1000
800
1.2
1.0
PIN = 24 dBm, VD = 24 V, Temp. = 25 °C
PIN = 24 dBm, VD = 24 V, Temp. = 25 °C
0.8
0.6
0.4
0.2
0.0
-0.2
300 mA
600 mA
300 mA
600 mA
600
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
VDELTA vs. Frequency vs. IDQ
5
4
3
2
1
0
PIN = 24 dBm, VD = 24 V, Temp. = 25 °C
300 mA
600 mA
VDELTA = VREF - VDET
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Data Sheet Rev. H, May 2021 | Subject to change without notice
- 10 of 26 -
www.qorvo.com
QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Output Power vs. Input Power vs. Temp.
PAE vs. Input Power vs. Temp.
46
55
VD = 24 V, IDQ = 600 mA, Freq. = 9 GHz
44
50
45
40
35
30
25
20
15
10
5
VD = 24 V, IDQ = 600 mA, Freq. = 9 GHz
42
40
38
36
34
32
30
28
-40C
+25C
+85C
-40C
+25C
+85C
26
24
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Gate Current vs. Input Power vs. Temp.
Drain Current vs. Input Power vs. Temp.
40
35
30
25
20
15
10
5
2200
2000
1800
1600
1400
1200
1000
800
VD = 24 V, IDQ = 600 mA, Freq. = 9 GHz
VD = 24 V, IDQ = 600 mA, Freq. = 9 GHz
-40C
+25C
+85C
600
-40C
+25C
+85C
0
400
-5
200
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
VDELTA vs. Input Power vs. Temp.
5
4
3
2
1
0
VD = 24 V, IDQ = 600 mA, Freq. = 9 GHz
VDELTA = VREF - VDET
-40C
+25C
+85C
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Output Power vs. Input Power vs. Freq.
PAE vs. Input Power vs. Freq.
48
55
VD = 24 V, IDQ = 600 mA, Temp. = 25 °C
VD = 24 V, IDQ = 600 mA, Temp. = 25 °C
46
44
42
40
38
36
34
32
30
28
26
50
45
40
35
30
7.9 GHz
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
7.9 GHz
25
8.0 GHz
20
9.0 GHz
15
10.0 GHz
10
11.0 GHz
5
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Drain Current vs. Input Power vs. Freq.
Gate Current vs. Input Power vs. Freq.
2200
2000
1800
1600
1400
1200
1000
800
30
VD = 24 V, IDQ = 600 mA, Temp. = 25 °C
VD = 24 V, IDQ = 600 mA, Temp. = 25 °C
25
20
15
10
5
7.9 GHz
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
7.9 GHz
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
0
600
400
-5
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
VDELTA vs. Input Power vs. Freq.
VD = 24 V, IDQ = 600 mA, Temp. = 25 °C
VDELTA = VREF - VDET
5
4
3
2
1
0
7.9 GHz
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Power Added Eff. vs. Input Power vs. VD
Output Power vs. Input Power vs. VD
47
60
IDQ = 600 mA, Freq. = 9 GHz, Temp. = 25 °C
IDQ = 600 mA, Freq. = 9 GHz, Temp. = 25 °C
45
43
41
39
37
35
33
31
29
27
25
23
55
50
45
40
35
30
25
20
15
10
18 V
6
20 V
22 V
24 V
26 V
28 V
5
0
18 V
20 V
22 V
24 V
26 V
28 V
0
2
4
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Drain Current vs. Input Power vs. VD
Gate Current vs. Input Power vs. VD
2200
2000
1800
1600
1400
1200
1000
800
30
25
20
15
10
5
IDQ = 600 mA, Freq. = 9 GHz, Temp. = 25 °C
IDQ = 600 mA, Freq. = 9 GHz, Temp. = 25 °C
600
0
400
18 V
20 V
22 V
24 V
26 V
28 V
18 V
6
20 V
22 V
24 V
26 V
28 V
200
-5
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
0
2
4
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
VDELTA vs. Input Power vs. VD
5
4
3
2
1
0
IDQ = 600 mA, Freq. = 9 GHz, Temp. = 25 °C
VDELTA = VREF - VDET
18 V
22 V
26 V
20 V
24 V
28 V
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLinearity
IM3 vs. Output Power vs. Temperature
IM5 vs. Output Power vs. Temperature
0
0
VD = 24 V, IDQ = 600 mA, Freq. = 7.9 GHz, Δf = 1 MHz
VD = 24 V, IDQ = 600 mA, Freq. = 7.9 GHz, Δf = 1 MHz
-10
-10
-20
-30
-40
-50
-60
-70
-80
-90
-20
-30
-40
-50
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
-100
-60
18 20 22 24 26 28 30 32 34 36 38 40
Output Power per Tone (dBm)
16 18 20 22 24 26 28 30 32 34 36 38 40
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Temperature
IM5 vs. Output Power vs. Temperature
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
VD = 24 V, IDQ = 600 mA, Freq. = 10 GHz, Δf = 1 MHz
VD = 24 V, IDQ = 600 mA, Freq. = 10 GHz, Δf = 1 MHz
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
16 18 20 22 24 26 28 30 32 34 36 38 40
Output Power per Tone (dBm)
18 20 22 24 26 28 30 32 34 36 38 40
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Temperature
IM5 vs. Output Power vs. Temperature
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
VD = 24 V, IDQ = 600 mA, Freq. = 11 GHz, Δf = 1 MHz
VD = 24 V, IDQ = 600 mA, Freq. = 11 GHz, Δf = 1 MHz
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
16 18 20 22 24 26 28 30 32 34 36 38 40
Output Power per Tone (dBm)
18 20 22 24 26 28 30 32 34 36 38 40
Output Power per Tone (dBm)
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLinearity
IM3 vs. Output Power vs. VD
IM5 vs. Output Power vs. VD
0
0
IDQ = 600 mA, Freq. = 7.9 GHz, Temp. = 25 °C, Δf = 1 MHz
IDQ = 600 mA, Freq. = 7.9 GHz, Temp. = 25 °C, Δf = 1 MHz
-10
-10
-20
-30
-40
-50
-60
-70
-20
-30
-40
-50
-80
-90
18 V
24
20 V
26
22 V
28 30
24 V
32
26 V
34
28 V
38
18 V
24
20 V
26
22 V
28
24 V
32
26 V
34
28 V
36 38
-60
20
20
20
22
30
40
40
40
20
20
20
22
36
40
40
40
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. VD
IM5 vs. Output Power vs. VD
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
IDQ = 600 mA, Freq. = 10 GHz, Temp. = 25 °C, Δf = 1 MHz
IDQ = 600 mA, Freq. = 10 GHz, Temp. = 25 °C, Δf = 1 MHz
18 V
24
20 V
28
22 V
30
24 V
32 34
26 V
36
28 V
38
18 V
24
20 V
26
22 V
28
24 V
32
26 V
34
28 V
36 38
22
30
22
26
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. VD
IM5 vs. Output Power vs. VD
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
IDQ = 600 mA, Freq. = 11 GHz, Temp. = 25 °C, Δf = 1 MHz
IDQ = 600 mA, Freq. = 11 GHz, Temp. = 25 °C, Δf = 1 MHz
18 V
24
20 V
26
22 V
28
24 V
32
26 V
34
28 V
36 38
18 V
24
20 V
28
22 V
30
24 V
32 34
26 V
36
28 V
38
22
30
22
26
Output Power per Tone (dBm)
Output Power per Tone (dBm)
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀLinearity
IM3 vs. PAE vs. Output Power
0
70
60
50
40
30
20
10
0
IDQ = 600 mA, Freq. = 7.9 GHz, Temp. = 25 °C, Δf = 1 MHz
-10
-20
-30
-40
-50
-60
-70
IM3
18 V
24 V
20 V
26 V
22 V
28 V
PAE
36
20
22
24
26
28
30
32
34
38
40
Output Power per Tone (dBm)
Data Sheet Rev. H, May 2021 | Subject to change without notice
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀHarmonics
2nd Harmonic vs. POUT vs. VD
2nd Harmonic vs. POUT vs. Temp.
0
0
IDQ = 600 mA, Temp. = 25 °C, F0 = 7.9 GHz
VD = 24 V, IDQ = 600 mA, F0 = 7.9 GHz
-10
-10
-20
-30
-40
-50
-20
-30
-40
-50
- 40 C
+25 C
+85 C
20 V
32
24 V
36
28 V
38
-60
-60
22 24 26 28 30 32 34 36 38 40 42 44
Output Power (dBm)
26
26
26
28
28
28
30
34
40
42
42
42
44
44
44
Output Power (dBm)
2nd Harmonic vs. POUT vs. VD
2nd Harmonic vs. POUT vs. Temp.
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
IDQ = 600 mA, Temp. = 25 °C, F0 = 10 GHz
VD = 24 V, IDQ = 600 mA, F0 = 10 GHz
- 40 C
+25 C
+85 C
20 V
32
24 V
36
28 V
38
22 24 26 28 30 32 34 36 38 40 42 44
Output Power (dBm)
30
34
40
Output Power (dBm)
2nd Harmonic vs. POUT vs. VD
2nd Harmonic vs. POUT vs. Temp.
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
IDQ = 600 mA, Temp. = 25 °C, F0 = 11 GHz
VD = 24 V, IDQ = 600 mA, F0 = 11 GHz
- 40 C
+25 C
+85 C
20 V
32
24 V
36
28 V
38
22 24 26 28 30 32 34 36 38 40 42 44
Output Power (dBm)
30
34
40
Output Power (dBm)
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Gain vs. Frequency vs. Temperature
Gain vs. Frequency vs. VD
35
35
Temp. = 25 °C, IDQ = 600 mA
30
25
20
30
25
20
15
10
-40C
+25C
+85C
15
10
5
18 V
8
20 V
22 V
24 V
10
26 V
28 V
5
0
VD = 24 V, IDQ = 600 mA
0
7
8
9
10
11
12
12
12
7
9
11
12
12
12
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
Input Return Loss vs. Frequency vs. VD
0
0
VD = 24 V, IDQ = 600 mA
Temp. = 25 °C, IDQ = 600 mA
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
-40C
+25C
+85C
18 V
8
20 V
22 V
24 V
10
26 V
28 V
7
8
9
10
11
7
9
11
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency vs. VD
Output Return Loss vs. Freq. vs. Temp.
0
-5
0
-5
Temp. = 25 °C, IDQ = 600 mA
VD = 24 V, IDQ = 600 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
-40C
+25C
+85C
18 V
20 V
22 V
9
24 V
26 V
28 V
11
7
8
9
10
11
7
8
10
Frequency (GHz)
Frequency (GHz)
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Gain vs. Frequency vs. IDQ
Input Return Loss vs. Frequency vs. IDQ
35
0
VD = 24 V, Temp. = 25 °C
VD = 24 V, Temp. = 25 °C
30
25
20
15
10
5
-5
-10
-15
-20
-25
300 mA
9
600 mA
10
300 mA
9
600 mA
10
0
-30
7
8
11
12
7
8
11
12
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency vs. IDQ
0
-5
VD = 24 V, Temp. = 25 °C
-10
-15
-20
-25
300 mA
600 mA
-30
6
7
8
9
10
11
12
Frequency (GHz)
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
TBASEꢁ=ꢁ85ꢁ°C, VDꢁ=ꢁ+24ꢁV, IDQꢁ=ꢁ600ꢁmA, Pulsed
VD (100 us/10%), Freqꢁ=ꢁ9.25ꢁGHz, PINꢁ=ꢁ24ꢁdBm,
ID_Driveꢁ=ꢁ1.7 A, POUTꢁ=ꢁ42 dBm, PDISSꢁ=ꢁ25.9 W
2.503
°C/W
Channel Temperature (TCH) (Under RF drive) (2)
149.8
°C
Thermal Resistance (θJC) (1)
2.860
126.2
2.704
150.4
°C/W
°C
TBASEꢁ=ꢁ85°C, VDꢁ=ꢁ+24V, IDQꢁ=ꢁ600 mA, CW,
PDISSꢁ=ꢁ14.4ꢁW
Channel Temperature (TCH) (No RF) (2)
Thermal Resistance (θJC) (1)
TBASEꢁ=ꢁ85ꢁ°C, VDꢁ=ꢁ+24ꢁV, IDQꢁ=ꢁ600ꢁmA, CW,
Freqꢁ=ꢁ9.25ꢁGHz, PINꢁ=ꢁ24ꢁdBm, ID_Driveꢁ=ꢁ1.7 A,
POUTꢁ=ꢁ42 dBm, PDISSꢁ=ꢁ24.2 W
°C/W
°C
Channel Temperature (TCH) (Under RF drive) (2)
Thermal Resistance (θJC) (1)
TBASEꢁ=ꢁ85ꢁ°C, VDꢁ=ꢁ+20ꢁV, IDQꢁ=ꢁ600ꢁmA, Pulsed
VD (100 us/10%), Freqꢁ=ꢁ9.25ꢁGHz, PINꢁ=ꢁ24ꢁdBm,
ID_Driveꢁ=ꢁ1.6 A, POUTꢁ=ꢁ41.3 dBm, PDISSꢁ=ꢁ18.5 W
1.896
120.1
°C/W
°C
Channel Temperature (TCH) (Under RF drive) (2)
Thermal Resistance (θJC) (1)
2.807
118.7
2.552
130.2
°C/W
°C
TBASEꢁ=ꢁ85°C, VDꢁ=ꢁ+20V, IDQꢁ=ꢁ600 mA, CW,
PDISSꢁ=ꢁ12ꢁW
Channel Temperature (TCH) (No RF) (2)
Thermal Resistance (θJC) (1)
TBASEꢁ=ꢁ85ꢁ°C, VDꢁ=ꢁ+20ꢁV, IDQꢁ=ꢁ600ꢁmA, CW,
Freqꢁ=ꢁ9.25ꢁGHz, PINꢁ=ꢁ24ꢁdBm, ID_Driveꢁ=ꢁ1.56 A,
POUTꢁ=ꢁ41.4 dBm, PDISSꢁ=ꢁ17.7 W
°C/W
°C
Channel Temperature (TCH) (Under RF drive) (2)
Notes:
1. Thermal resistance is referenced to the package backside TBASE
2. IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability
Estimates
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Power Dissipation and Maximum Gate Current
PDISS vs. Frequency vs. VD
PDISS vs. Frequency vs. VD
50
45
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
PIN = 24 dBm, IDQ = 600 mA, Temp. = 85 °C
PIN = 24 dBm, IDQ = 600 mA, Temp. = 85 °C, CW
Pulsed VD : PW = 100 µS, DC = 10%
18 V
20 V
22 V
24 V
26 V
28 V
18 V
20 V
22 V
24 V
26 V
28 V
0
0
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
QPA1010 Ig_max vs. TCH vs. Stage
60
55
50
45
40
35
30
25
20
15
10
5
Stage 1
Stage 2
Total
0
110
120
130
140
150
160
170
180
Channel Temperature, TCH (°C)
Data Sheet Rev. H, May 2021 | Subject to change without notice
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Applications Circuit for Linear and Pulsed Operations
Note: VDELTA = VREF - VDET
QPA1010 can be biased from either the top side or bottom side.
VD1 and VD2 need to be tied together.
V
D1 / VD2 and VREF / VDET have to be on the same side for VDELTA to work.
Bypassing components required for the side(s) being biased.
The extra bias components (R6, R17, C5 and C14) are required for optimum linearity.
Bias Up Procedure
1. Set ID limit to 2000 mA, IG limit to 20ꢁmA
Bias Down Procedure
1. Turn off RF supply
2. Apply −5ꢁV to VG
2. Reduce VG to −5ꢁV; ensure IDQ is approx. 0ꢁmA
3. Set VD to 0ꢁV
3. Apply +24ꢁV to VD; ensure IDQ is approx. 0ꢁmA
4. Adjust VG until IDQ = 600ꢁmA (VG ~ −1.8 V Typ.).
5. Turn on RF supply
4. Turn off VD supply
5. Turn off VG supply
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly for Pulsed Operation
Note: PCB is a multilayer
1. All 4 metal thicknesses are 0.5 oz
2. Upper core 1 is Rogers 4003C, 8 mil thick
3. Lower core 2 is 370HR, 6 mil thick
4. Prepreg is an epoxy coated glass fabric
5. Total finished PCB thickness is 25 ±3 mil
6. This EVB uses a copper-coined PCB for optimum thermal management under high dissipation long pulse and/or CW
conditions
Bill of Materials for EVB
Reference Des.
C1, C5, C10, C14
Value
10ꢁuF
Description
CAP, 1206, 50ꢁV, 20ꢁ%, X5R
CAP, 0402, 50ꢁV, 10ꢁ%, X7R
Manuf.
Various
Various
Various
Various
Various
Various
Part Number
–
–
–
–
–
–
C2, C6, C9, C13
R1,ꢁR12
R2, R3, R6, R7, R11, R15, R16, R17 (1)
R8, R9, R18, R19
L1, L2 (1)
0.01ꢁuF
5.1ꢁOhm RES, 0402, 50V, 5ꢁ%, SMT
0 Ohm RES, 0402, 5ꢁ%, SMD
25.5 K Ohm RES, 0402, 1/16W, 1%, 0402
0 Ohm RES, 0603, 1/10 W
Note:
1. These components are acting as the jumpers for this EVB.
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Mechanical Information
Units: millimeters
Tolerances: unless specified
x.xx = ± 0.25
x.xxx = ± 0.100
Materials:
Base: Laminate
Lid: FR4
All metalized features are gold plated
Part is epoxy sealed
Marking:
QPA1010: Part number
YY: Part Assembly year
WW: Part Assembly week
MXXX: Batch ID
Pin Description
Pad No.
Symbol
Description
Ground. Must be grounded on the PCB. Conductive filled vias recommended for
least inductance and improved thermal performance
1, 3, 13, 15, 25 (pad) GND
2
RFIN
N/C
RF Input; matched to 50 Ω; DC blocked
4, 7, 21, 24
Not connected internally. Recommended to be grounded
Stage 1-2 Gate Voltage. Bias network is required; see recommended
Application Information above on page 22
Stage 1 Drain Voltage. Bias network is required; see recommended Application
Information above on page 22
5, 23
VG1-2
VD1
6, 22
Stage 2 Drain voltage; Bias network is required; see recommended Application
Information above on page 22
8 – 10, 18 - 20
VD2
11, 17
12, 16
14
VREF
Reference voltage
VDET
Detector voltage
RFOUT
RF Output; matched to 50 Ω; DC blocked
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Assembly Notes
Compatible with lead-free soldering processes with 260°C peak reflow temperature.
This package is air-cavity and non-hermetic, and therefore cannot be subjected to aqueous washing. The use of no-clean
solder to avoid washing after soldering is highly recommended.
Contact plating: Ni-Au
Solder rework not recommended
Recommended Soldering Temperature Profile
Data Sheet Rev. H, May 2021 | Subject to change without notice
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QPA1010
7.9 –ꢀ11.0ꢀGHz 15ꢀW GaN Power Amplifier
Handling Precautions
Parameter
Rating Standard
ESDꢁ–ꢁHuman Body Model (HBM)
ESDꢁ–ꢁCharged Device Model (CDM)
0B
C3
ANSI/ESDAꢀ/ꢀJEDEC JS-001
ANSI/ESDAꢀ/ꢀJEDEC JS-002
Caution!
ESD-Sensitive Device
JEDEC standard IPC/JEDEC
J-STD-020
MSLꢁ–ꢁConvection Reflow 260ꢁ°C
3
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical
and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:
Lead Free
Antimony Free
TBBP-A (C15H12Br402) Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2021 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. H, May 2021 | Subject to change without notice
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