QPA1022D [QORVO]
8.5 â 11 GHz 4 W GaN Power Amplifier;
| 型号： | QPA1022D |
| 厂家： | 
Qorvo |
| 描述： | 8.5 â 11 GHz 4 W GaN Power Amplifier 高功率电源 射频 微波 |
| 文件： | 总17页 (文件大小：712K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA1022D
8.5ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
®
Product Overview
Qorvo’s QPA1022D is a MMIC power amplifier fabricated
on Qorvo’s production 0.15 um GaN on SiC process
(QGaN15). Covering 8.5ꢀ–ꢀ11.0 GHz, the QPA1022D
provides > 4 W of saturated output power and 24 dB of
large-signal gain while achieving 45% power-added
efficiency.
The QPA1022D is matched to 50Ω with integrated DC
blocking capacitors at RF output and DC grounded input
port. It also has a built-in power detector for system RF
power checking. With a compact dimension of 2.65 x 1.25
x 0.10 mm, it can support tight lattice spacing requirements
for phased array radar applications. It is also an ideal
component to support test instrumentation and commercial
communication systems.
Functional Block Diagram
Key Features
• Frequency Range: 8.5ꢀ–ꢀ11 GHz
• PSAT (PIN=12 dBm): 36 dBm
• PAE (PIN=12 dBm): 45 %
• Power Gain (PIN= 12 dBm): 24 dB
• Small Signal Gain: 31 dB
• Bias: VD = 22 V, IDQ = 180 mA
• Die Dimensions: 2.63 x 1.23 x 0.10 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Ordering Information
Applications
• Radar
• Electronic Warfare
• Communications
Part No.
QPA1022D
Description
8.5 to 11 GHz 4 W GaN Power Amplifier
QPA1022DS2
QPA1022DEVB
Device Sample (2 pcs)
Evaluation Board for QPA1022D
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Absolute Maximum Ratings
Units
Parameter
Valueꢀ/ꢀRange
Drain Voltage (VD)
28
V
Gate Voltage Range (VG)
-5 to 0
600
V
Drain Current (ID)
mA
mA
dBm
°C
Gate Current (IG)
10
Input Power (PIN), 3:1 VSWR, VD=22 V, IDQ=180 mA, 85 °C
Storage Temperature
27
-55 to +150
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may reduce device reliability.
Recommended Operating Conditions
Units
Parameter
Valueꢀ/ꢀRange
Drain Voltage (VD)
22
V
Drain Current (IDQ
)
180
mA
°C
Operating Temperature
− 40 to + 85
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: Temp = 25 °C, VD = 22 V, IDQ = 180 mA. Data de-embedded to the reference planes.
Parameter
Min
Typ
Max
Units
Operational Frequency
8.5
11
GHz
Output Power (Pulse and CW, PIN=12 dBm)
Power Added Efficiency (Pulse and CW, PIN= 12 dBm)
Large Signal Gain (Pulse and CW, PIN=12 dBm)
Small Signal Gain
36.5
45
dBm
%
24.5
31
dB
dB
Input Return Loss
17
dB
Output Return Loss
7
dB
Harmonic Suppression (CW @POUT = 36 dBm, 2f0)
POUT Temp. Coeff. (PIN = 12 dBm)
Small Signal Gain Temp. Coefficient
27
dBc
dB/°C
dB/°C
−0.001
−0.087
Note: For pulse power, Pulse Width = 100 uS, Duty Cycle = 10%
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Temperature = + 25ꢁ°C
Input Return Loss vs Temp
Gain vs Temp
0
-5
40
38
36
34
32
30
28
26
24
22
20
- 40C
+ 25C
+ 85C
-10
-15
-20
-25
-30
- 40C
+ 25C
+ 85C
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Reverse Isolation vs Temp
Output Return Loss vs Temp
-55
-60
-65
-70
-75
-80
-85
0
-5
- 40C
+ 25C
+ 95C
- 40C
+ 25C
+ 85C
-10
-15
-20
-25
-30
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Temperature = + 25ꢁ°C
Gain vs Current
Gain vs Voltage
40
38
36
34
32
30
28
26
24
22
20
40
38
36
34
32
30
28
26
24
22
20
90 mA
180 mA
270 mA
18 V
20 V
22 V
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Input Return Loss vs Voltage
Input Return Loss vs Current
0
0
-5
18 V
20 V
22 V
90 mA
180 mA
270 mA
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Output Return Loss vs Voltage
Output Return Loss vs Current
0
-5
0
-5
18 V
20 V
22 V
90 mA
180 mA
270 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
7
8
9
10
11
12
7
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal, Pulse
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Pulse Width = 100 uS, DC = 10%, Temp = + 25ꢁ°C
Power vs Temperature
PAE vs Temperature
40
38
36
34
32
60
55
50
45
40
35
30
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
8
9
10
11
12
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Power Detector Voltatge vs Temp
Power Gain vs Temperature
27
26
25
24
23
22
21
20
4.0
3.0
2.0
1.0
0.0
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
Pin = 12 dBm
Pin = 12 dBm
8
9
10
11
12
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal, Pulse
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Pulse Width = 100 uS, DC = 10%, Temp = + 25ꢁ°C
Power vs Voltage
Power vs Current
40
38
36
34
32
40
38
36
34
32
90 mA
180 mA
270 mA
18 V
20 V
22 V
8
8
8
9
10
11
12
12
12
8
8
8
9
10
11
12
12
12
Freq (GHz)
Freq (GHz)
PAE vs Voltage
PAE vs Current
60
55
50
45
40
35
30
60
55
50
45
40
35
30
90 mA
180 mA
270 mA
18 V
20 V
22 V
9
10
11
9
10
Freq (GHz)
11
Freq (GHz)
Power Gain vs Voltage
Power Gain vs Current
27
26
25
24
23
22
21
20
27
26
25
24
23
22
21
20
90 mA
180 mA
270 mA
18 V
20 V
22 V
9
10
11
9
10
Freq (GHz)
11
Freq (GHz)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal, Pulse
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Pulse Width = 100 uS, DC = 10%, Temp = + 25ꢁ°C
Power vs Pin
Pout vs Pin vs Temp
40
38
36
34
32
30
28
26
24
22
20
40
35
30
25
20
15
Freq = 9.5 GHz
8.5 GHz
-10 -8 -6 -4 -2 0
9.5 GHz
10.5 GHz
- 40 C
+ 25 C
+ 85 C
2
4
6
8
10 12 14 16 18
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
PAE vs Pin vs Temp
PAE vs Pin
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
Freq = 9.5 GHz
8.5 GHz
-10 -8 -6 -4 -2 0
9.5 GHz
10.5 GHz
- 40 C
2
+ 25 C
+ 85 C
0
0
2
4
6
8
10 12 14 16 18
-10 -8 -6 -4 -2
0
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
Power Gain vs Pin vs Temp
Power Gain vs Pin
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
Freq = 9.5 GHz
8.5 GHz
-10 -8 -6 -4 -2
9.5 GHz
10.5 GHz
8 10 12 14 16 18
- 40 C
2
+ 25 C
+ 85 C
0
-10 -8 -6 -4 -2
0
4
6
8
10 12 14 16 18
0
2
4
6
Pin (dBm)
Pin (dBm)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal, Pulse
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Pulse Width = 100 uS, DC = 10%, Temp = + 25ꢁ°C
Ids vs Pin
IG vs Pin
600
500
400
300
200
100
5
4
3
2
1
0
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
9.5 GHz
10.5 GHz
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
Power Detector Voltatge vs Pout
4.0
3.0
2.0
1.0
0.0
-1.0
8.5 GHz
9.5 GHz
10.5 GHz
24
26
28
30
32
34
36
38
Pout (dBm)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal, CW
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Temperature = + 25ꢁ°C
Power vs Temperature
PAE vs Temperature
40
38
36
34
32
60
55
50
45
40
35
30
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
8
9
10
11
12
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Power Detector Voltatge vs Temp
Power Gain vs Temperature
27
26
25
24
23
22
21
20
4.0
3.0
2.0
1.0
0.0
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
Pin = 12 dBm
Pin = 12 dBm
8
9
10
11
12
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal, CW
Test conditions otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Temperature = + 25ꢁ°C
Power vs Pin
PAE vs Pin
40
38
36
34
32
30
28
26
24
22
20
50
45
40
35
30
25
20
15
10
5
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
-10 -8 -6 -4 -2 0
9.5 GHz
10.5 GHz
0
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
2
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
Power Gain vs Pin
Ids vs Pin
40
35
30
25
20
15
10
600
500
400
300
200
100
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
-10 -8 -6 -4 -2 0
9.5 GHz
10.5 GHz
10 12 14 16 18
2
4
6
8
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
Power Detector Voltatge vs Pout
IG vs Pin
10
9
8
7
6
5
4
3
2
1
0
4.0
3.0
2.0
1.0
0.0
-1.0
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
9.5 GHz
10.5 GHz
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
24
26
28
30
32
34
36
38
Pin (dBm)
Pout (dBm)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀHarmonic Suppressions, CW
Test conditions otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Temperature = + 25ꢁ°C
2nd Harmonic vs. Pout. vs. Freq
3rd Harmonic vs. Pout. vs. Freq
-15
-20
-25
-30
-35
-40
-25
-30
-35
-40
-45
8.5 GHz
30
9.5 GHz
32
10.5 GHz
34
8.5 GHz
30
9.5 GHz
32
10.5 GHz
34
28
36
28
36
Output Power (dBm)
Output Power (dBm)
2nd Harmonic vs. Freq. vs. Temp
3rd Harmonic vs. Freq. vs. Temp
-15
-20
-25
-30
-35
-40
-25
-30
-35
-40
-45
- 40C
+ 25C
+ 85C
- 40C
+ 25C
+ 85C
8
8.5
9
9.5
10
10.5
11
8
8.5
9
9.5
10
10.5
11
Freq (GHz)
Freq (GHz)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (No RF) (2)
Test Conditions
Value
Units
ºC/W
ºC
8.3
Tbase = 85 ºC, VD = 22 V, IDQ = 180 mA, PDISS = 3.96 W,
CW, No RF (quiescent DC operation)
118
Thermal Resistance (θJC) (1)
9.0
ºC/W
ºC
Tbase = 85 ºC, VD = 22 V, IDQ = 180 mA, CW
Freq = 9.5 GHz, ID_Drive = 0.472 A, PIN = 18 dBm, POUT
36.4 dBm, PDISS = 6.08 W
=
Channel Temperature, TCH (Under RF) (2)
140
Notes:
1. Thermal resistance is referenced to the back of Cu-Mo carrier plate, assuming carrier thickness 20 mils, eutectic die
attachment, back side of carrier temperature at 85 ºC
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Dissipated Power under RF Drive
Test conditions otherwise noted: VD = 22 V, IDQ = 180 mA, CW, Temperature = +85ꢁ°C
Pdiss vs Pin
10
8.5 GHz
9.5 GHz
10.5 GHz
9
8
7
6
5
4
3
2
1
0
Temperature @ 85C
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
Pin (dBm)
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Applications Information
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit to 600 mA, IG limit to 10 mA
2. Set VG to −4.0 V
1. Turn off RF signal
2. Reduce VG to −4.0 V. Ensure IDQ ~ 0 mA
4. Set VD to 0 V
3. Set VD +22 V
5. Turn off VD supply
4. Adjust VG more positive until IDQ 180 mA
5. Apply RF signal
6. Turn off VG supply
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
PCB is made from Rogers 4003C dielectric, 8 mil thickness, 0.5 oz. copper both sides.
Bill of Materials
Reference Des.
Value
Description
Manuf.
Part Number
C1, C2
1000 pF CAP, 1000 pF, 20%, 50 V, 0402
Various
R1, R2
C4
1.8 Ohm RES, 1.8 Ohm, 5%, 1/10 W, 0402
Various
Various
Various
10 uF
CAP, 10 uF, 20%, 50 V, 1206
RES, 0 OHM, JMPR, 0402
R4
0 Ω
J1, J2
2.92 mm CONNECTOR, FEMALE, ENDLAUNCH Southwest Microwave
1092-01A-5
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Mechanical Information
Dimensions are in mm
Die thickness: 0.100
Die x, y size tolerance: ± 0.050
Ground is backside of die
Bond Pad Description
Pad No. Symbol Pad Size (mm) Description
1
2
3
4
5
RF IN
0.113 x 0.183
0.083 x 0.083
0.208 x 0.093
0.090 x 0.090
0.113 x 0.183
RF input. 50 Ohms. DC grounded.
Gate voltage. Bypass network required.
Drain voltage. Bypass network required.
Power detection. Bias not required.
RF output. 50 Ohms. DC blocked.
VG
VD
VDET
RF OUT
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Assembly Notes
Component placement and adhesive attachment assembly notes:
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Reflow process assembly notes:
•
•
•
•
•
Use AuSn (80/20) solder and limit exposure to temperatures above 300ꢀ°C to 3ꢀ–ꢀ4 minutes, maximum.
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use any kind of flux.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonic are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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QPA1022D
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Handling Precautions
Caution!
Parameter
Rating Standard
ESD-Sensitive Device
ESDꢀ–ꢀHuman Body Model (HBM)
1A
ANSI/ESD/JEDEC JS-001
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and
assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to
change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information
contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual
property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT
CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES
WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE
OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-
saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
© 2021 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be reproduced
or distributed, in whole or in part, without the express written consent of Qorvo US, Inc.
Data Sheet Rev B, Feb 2021 | Subject to change without notice
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