QPA2575EVB [QORVO]
32 â 38 GHz 3 Watt Power Amplifier;
| 型号： | QPA2575EVB |
| 厂家： | 
Qorvo |
| 描述： | 32 â 38 GHz 3 Watt Power Amplifier |
| 文件： | 总16页 (文件大小：1192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
QPA2575
®
32ꢀ– 38 GHz 3 Watt Power Amplifier
Product Overview
Qorvo's QPA2575 is a Ka-band power amplifier fabricated
on Qorvo's QPHT15 0.15 um power pHEMT process. The
QPA2575 operates from 32 to 38 GHz, providing 3 W of
saturated power with 16 % power-added efficiency, and 19
dB small signal gain.
To simplify system integration, the QPA2575 is fully
matched to 50 ohms with integrated DC blocking caps on
both I/O ports. It is ideally suited to support both
commercial and defense related opportunities.
Key Features
The QPA2575 is 100% DC and RF tested on-wafer to
ensure compliance to performance specifications.
Frequency Range: 32 ꢀ– ꢀ38 GHz
PSAT (PIN=23 dBm): 35 dBm
PAE (PIN=23 dBm): 16 %
Lead-free and RoHS compliant
Small Signal Gain: 19 dB
Return Loss: 12 dB
Bias: Pulsed VD = 6 V, IDQ = 2.1 A
Package Dimensions: 7.0 x 8.0 x 1.465 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
Radar
VG_TOP
7
VD_TOP
6
Satellite Communications
RFIN
2
RFOUT
5
Ordering Information
Part No.
Description
QPA2575
32 - 38 GHz 3 Watt Power Amplifier
QPA2575TR7
QPA2575EVB
250 pieces on a 7” reel
Evaluation Board for QPA2575
3
4
VG_BOTTOM
VD_BOTTOM
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Min
Typ Max Units
Parameter
Valueꢀ/ꢀRange
6.5 V
Input Power (PIN)*
19
23
dBm
V
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Drain Voltage (VD); pulsed
Drain Current, Quiescent (IDQ
6 **
2.1
−5 to 0 V
)
A
3.6 A
Drain Current, RF (ID_Drive
Gate Voltage Typ. Range (VG)
Gate Current, RF (IG_Drive
)
See charts page 4, 8
−0.35 to -0.85
A
-14 to 29 mA
Pulsed, 22 W
CW, 16 W
V
Power Dissipation (PDISS), TBASE = 85°C
)
See charts page 4, 8
mA
°C
Operating Temp. Range, TBASE −40
+25
+85
Input Power (PIN), 50 Ω, VD = 6 V, IDQ = 2.1
A, TBASE = 85°C
Input Power (PIN), 3:1 VSWR, VD = 6 V, IDQ
= 2.1 A, TBASE = 85°C
26 dBm
26 dBm
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Channel Temperature, TCH
200 °C
260 °C
* Non-operating range: 8 – 18 dBm
** Not recommended for CW due to thermal
Mounting Temperature (30 seconds max)
Storage Temperature
−55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Conditionsꢀ(1) (2)
Min
Typ
Max
Units
Operational Frequency Range
32
38
GHz
PIN = +23 dBm, Frequency = 32 - 36 GHz
PIN = +23 dBm, Frequency = 37 - 38 GHz
PIN = +23 dBm, Frequency = 32 - 36 GHz
PIN = +23 dBm, Frequency = 37 - 38 GHz
36
35
Output Power at Saturation, PSAT
Power Added Efficiency, PAE
dBm
%
22
16
Small Signal Gain, S21
Input Return Loss, IRL
Output Return Loss, ORL
PSAT Temperature Coefficient
S21 Temperature Coefficient
Notes:
> 19
12
dB
dB
12
dB
TDIFF = −40°C to +85°C; PIN = +23 dBm
TDIFF = −40°C to +85°C
−0.009
−0.04
dBm/°C
dB/°C
1. Test conditions unless otherwise noted: Pulsed VD = 6 V, IDQ = 2.1 A, adjusting VG (typical -0.6V +/-), Pulse Width = 50 uS,
Duty Cycle = 35%, CW RF, TBASEꢁ=ꢁ+25ꢁ°C, Z0ꢁ=ꢁ50ꢁΩ
2. TBASE is back side of package
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 6 V, IDQ = 2.1 A, CW PIN = 23 dBm, PW = 50 uS, DC = 35%, TBASE = +25ꢁ°C
Output Power vs. Freq. vs. Temp.
Output Power vs. Freq. vs. VD
38
37
36
35
34
33
32
31
30
38
37
36
35
34
33
32
31
30
-40 C
33
+25 C
34
+85 C
36
5.7 V
33
6.0 V
34
6.3 V
36
30
30
30
31
31
31
32
35
37
38
38
38
30
30
30
31
31
31
32
35
37
37
37
38
38
38
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. Temp.
PAE vs. Freq. vs. VD
30
28
26
24
22
20
18
16
14
12
30
28
26
24
22
20
18
16
14
12
-40 C
33
+25 C
34
+85 C
36
5.7 V
33
6.0 V
34
6.3 V
36
32
35
37
32
35
Frequency (GHz)
Frequency (GHz)
Power Gain vs. Freq. vs. Temp.
Power Gain vs. Freq. vs. VD
28
26
24
22
20
18
16
14
12
10
28
26
24
22
20
18
16
14
12
10
-40 C
+25 C
+85 C
5.7 V
6.0 V
6.3 V
32
33
34
35
36
37
32
33
34
35
36
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 6 V, IDQ = 2.1 A, CW PIN = 23 dBm, PW = 50 uS, DC = 35%, TBASE = +25ꢁ°C
Drain Current vs. Freq. vs. Temp.
Drain Current vs. Freq. vs. VD
3400
3200
3000
2800
2600
2400
2200
2000
3400
3200
3000
2800
2600
2400
2200
2000
-40 C
32 33
+25 C
34
+85 C
36
5.7 V
32
6.0 V
34
6.3 V
36
30
31
35
37
38
30
31
33
35
37
38
Frequency (GHz)
Frequency (GHz)
Gate Current vs. Freq. vs. Temp.
Gate Current vs. Freq. vs. VD
12
10
8
12
10
8
6
6
4
4
2
2
0
0
-2
-4
-6
-8
-2
-4
-6
-8
5.7 V
6.0 V
6.3 V
36
-40 C
33
+25 C
34
+85 C
36
30
31
32
35
37
38
30
31
32
33
34
35
37
38
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 6 V, IDQ = 2.1 A, CW PIN = 23 dBm, PW = 50 uS, DC = 35%, TBASE = +25ꢁ°C
Output Power vs. Input Power vs. Freq.
Output Power vs. Input Power vs. Freq.
38
37
36
35
34
33
32
31
30
38
37
36
35
34
33
32
31
30
32 GHz
35 GHz
32 GHz
35 GHz
TBASE = +25 0C
TBASE = -40 0C
38 GHz
38 GHz
19
20
21
22
23
19
20
21
22
23
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Freq.
38
37
36
35
34
33
32
31
32 GHz
35 GHz
TBASE = +85 0C
38 GHz
30
19
20
21
22
23
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
Output Power vs. Input Power vs. VD
38
37
36
35
34
33
32
31
30
38
37
36
35
34
33
32
31
30
Frequency = 35 GHz
Frequency = 35 GHz
-40 C
+25 C
+85 C
5.7 V
6.0 V
6.3 V
19
20
21
22
23
19
20
21
22
23
Input Power (dBm)
Input Power (dBm)
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 6 V, IDQ = 2.1 A, CW PIN = 23 dBm, PW = 50 uS, DC = 35%, TBASE = +25ꢁ°C
PAE vs. Input Power vs. Freq.
PAE vs. Input Power vs. Freq.
30
28
26
24
22
20
18
16
14
12
30
28
26
24
22
20
18
16
14
12
TBASE = +25 0C
TBASE = -40 0C
32 GHz
35 GHz
38 GHz
32 GHz
35 GHz
38 GHz
19
20
21
22
23
19
20
21
22
23
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Freq.
30
28
26
24
22
20
18
16
14
TBASE = +85 0C
32 GHz
35 GHz
38 GHz
12
19
20
21
22
23
Input Power (dBm)
PAE vs. Input Power vs. Temp.
PAE vs. Input Power vs. VD
30
28
26
24
22
20
18
16
14
12
30
28
26
24
22
20
18
16
14
12
Frequency = 35 GHz
Frequency = 35 GHz
-40 C
5.7 V
6.0 V
6.3 V
+25 C
+85 C
19
20
21
22
23
19
20
21
22
23
Input Power (dBm)
Input Power (dBm)
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 6 V, IDQ = 2.1 A, CW PIN = 23 dBm, PW = 50 uS, DC = 35%, TBASE = +25ꢁ°C
Power Gain vs. Input Power vs. Freq.
Power Gain vs. Input Power vs. Freq.
28
26
24
22
20
18
16
14
12
10
28
26
24
22
20
18
16
14
12
10
TBASE = -40 0C
TBASE = +25 0C
32 GHz
32 GHz
35 GHz
38 GHz
35 GHz
38 GHz
19
20
21
22
23
19
20
21
22
23
Input Power (dBm)
Input Power (dBm)
Power Gain vs. Input Power vs. Freq.
28
26
24
22
20
18
16
14
12
TBASE = +85 0C
32 GHz
35 GHz
38 GHz
10
19
20
21
22
23
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
Power Gain vs. Input Power vs. VD
28
26
24
22
20
18
16
14
12
10
28
26
24
22
20
18
16
14
12
10
Frequency = 35 GHz
Frequency = 35 GHz
-40 C
5.7 V
+25 C
+85 C
6.0 V
6.3 V
19
20
21
22
23
19
20
21
22
23
Input Power (dBm)
Input Power (dBm)
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: Pulsed VD = 6 V, IDQ = 2.1 A, CW PIN = 23 dBm, PW = 50 uS, DC = 35%, TBASE = +25ꢁ°C
Drain Current vs. Input Power vs. Freq.
Gate Current vs. Input Power vs. Freq.
3400
3200
3000
2800
2600
2400
2200
2000
12
10
8
6
4
2
0
32GHz
35 GHz
38 GHz
32 GHz
35 GHz
38 GHz
-2
-4
-6
-8
19
19
19
20
21
22
23
19
19
19
20
21
22
23
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Gate Current vs. Input Power vs. Temp.
3400
3200
3000
2800
2600
2400
2200
2000
12
10
8
Frequency = 35 GHz
6
4
2
0
-40 C
+25 C
+85 C
-40 C
-2
-4
-6
-8
+25 C
+85 C
Frequency = 35 GHz
20
21
22
23
20
21
22
23
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. VD
Gate Current vs. Input Power vs. VD
3400
3200
3000
2800
2600
2400
2200
2000
12
10
8
Frequency = 35 GHz
6
4
2
0
5.7 V
6.0 V
5.7 V
6.0 V
6.3 V
-2
-4
-6
-8
6.3 V
Frequency = 35 GHz
20
21
22
23
20
21
22
23
Input Power (dBm)
Input Power (dBm)
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: CW, VD = 6 V, IDQ = 2.1 A, PIN = -20 dBm, TBASE = +25ꢁ°C
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
28
26
24
22
20
18
16
14
12
10
28
26
24
22
20
18
16
14
12
10
5.7 V
33
6.0 V
34
6.3 V
36
-40 C
33
+25 C
34
+85 C
36
30
31
32
35
37
37
37
38
38
38
30
31
32
35
37
37
37
38
38
38
Frequency (GHz)
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
Input RL vs. Frequency vs. VD
-9
-9
-40 C
+25 C
+85 C
12 V
14 V
16 V
-12
-15
-18
-21
-24
-27
-30
-12
-15
-18
-21
-24
-27
-30
30
31
32
33
34
35
36
30
31
32
33
34
35
36
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
Output RL vs. Frequency vs. VD
-9
-12
-15
-18
-21
-24
-27
-30
-9
-12
-15
-18
-21
-24
-27
-30
-40 C
+25 C
+85 C
12 V
14 V
16 V
30
31
32
33
34
35
36
30
31
32
33
34
35
36
Frequency (GHz)
Frequency (GHz)
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
5.92
ºC/W
TBASE = 85 °C, VD = 6 V, IDQ = 2.1 A,
No RF (quiescent DC operation)
PDISS = 12.6 W
Channel Temperature, TCH (Under RF) (2)
160
4.63
157
°C
ºC/W
°C
TBASE = 85 °C, Pulsed VD = 6 V, IDQ = 2.1 A, Freq = 38
GHz, ID_Drive = 3.035 A, PW = 50 uS, DC = 35%,
Thermal Resistance (θJC) (1)
PIN = 23 dBm, POUT = 34.6 dBm,
Channel Temperature, TCH (Under RF) (2)
Notes:
PDISS = 15.5 W
1. Thermal resistance determined to the back of package ( TBASE = 85 °C)
Test conditions, unless otherwise noted:
Pulsed VD = 6 V, IDQ = 2.1 A, PW = 50 uS, DC = 35%, CW PIN = 23 dBm, TBASE = 85ꢁ°C
Dissipated Power vs. Freq. vs. VD
Median Lifetime vs. Channel Temperature
18
17
16
15
14
13
12
11
10
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
1E+03
TBASE = +85 0C
5.7 V
33
6.0 V
34
6.3 V
36
FET5
30
31
32
35
37
38
25
50
75
100
125
150
175
200
Frequency (GHz)
Channel Temperature, TCH (°C)
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Applications Circuit (Pulsed VD)
GND
GND
VD_TOP
VG_TOP
RFIN
RFOUT
VG_BOTTOM
VD_BOTTOM
GND
GND
Bias-Down Procedure
1. Turn off RF signal
Bias-Up Procedure
1. Set ID limit to 3.6 A, IG limit to 20 mA
2. Set VG to −1.5 V
2. Reduce VG to −1.5 V. Ensure IDQ ~ 0mA
3. Set VD to 0 V
4. Set VD +6 V
5. Adjust VG more positive until IDQ = 2.1 A
6. Apply RF signal
4. Turn off VD supply
5. Turn off VG supply
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Application Evaluation Board
GND
VG_TOP
VD_TOP
GND
GND
VG_BOTTOM
VD_BOTTOM
GND
Cu
coin
vias
View B and C
View D and F
PCB Layers
Bill of Materials
Reference Des.
C1, C3, C5, C7
C2, C4, C6, C8
Value
Description
Manuf.
Various
Various
Part Number
10 uF
CAP, 10uF, ±20%, 50V, X5R, 1206
CAP, 0.01uF, ±10%, 50V, X7R, 0402
0.1 uF
R1, R2,
R4 – R6, R8
5.1 Ω
RES, 5.1 Ohm, 5%, 50V, 0402
Various
Various
R3, R7
H1
0 Ω
RES, 0 Ohm, JMPR, 0402
-
-
-
Header, connector, 2x6, 0.100”, SMD
Connector, Female, End Launch, 2.4mm
Connector, Header, 2x6, 0.100”, SMD
Screw, cap, socket head, 2-56x1/8”
J1, J2
J3, J4
S1 – S4
Southwest Microwave
Core FR4 0.027”thick, copper metal with
immersion silver final plating. Total PCB
thickness is 0.0376”
PCB
-
Rogers Corp.
Custom
Custom
Carrier
-
-
-
T-Carrier, Copper C110, 0.990 x 2.000 x 0.275”
Preform, Solder, 0.984 x 1.994, 0.003”
Paste, solder, Sn62Pb37, type 3
Preform Solder
Solder
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Mechanical Information
6
7
5
2
1
4
3
Notes: unless otherwise specified;
1. Dimensions: millimeters (mm)
2. Package is air cavity, leads are gold (Au) plated of 0.10um min., base is laminate; Part is epoxy sealed
3. Marking: YY is calendar year; WW is assembly week; MXXX is batch ID
Pin Description
Pin Number
Symbol
Center Pad
RFIN
Description
Ground connection
1
2
3
4
5
6
7
RF input. 50 Ohms. DC blocked.
VG
Gate voltage, bottom. Bypass network required; refer to page 11
Drain voltage, bottom. Bypass network required; refer to page 11
RF output. 50 Ohms. DC blocked.
VD
RFOUT
VD
Drain voltage, top. Bypass network required; refer to page 11
Gate voltage, top. Bypass network required; refer to page 11
VG
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Tape and reel Information
Standard T/R size = 250 pieces on a 7” reel
Dimensions: millimeters (mm)
Tolerances unless otherwise noted: .X = ± .2; .XX = ± .10
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Solderability
Compatible with lead-free soldering processes with 260°C peak reflow temperature.
This package is air-cavity and non-hermetic, and therefore cannot be subjected to aqueous washing. The use of no-clean
solder to avoid washing after soldering is highly recommended.
Contact plating: Ni-Au
Solder rework not recommended
Recommended Soldering Temperature Profile
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Preliminary
QPA2575
®
32 ꢀ–ꢀ38 GHz 3 Watt Power Amplifier
Handling Precautions
Parameter
Rating Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
1B
C3
3
ANSI/ESD/JEDEC JS-001
ANSI/ESD/JEDEC JS-002
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.
This product also has the following attributes:
Lead Free
Antimony Free
TBBP-A (C15H12Br402) Free
SVHC Free
PFOS Free
Contact Information
For the latest specifications, additional product information, worldw
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
© 2020 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be
reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc.
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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