QPM1021EVB [QORVO]
10 â 12 GHz 100 W GaN Power Amplifier;
| 型号： | QPM1021EVB |
| 厂家： | 
Qorvo |
| 描述： | 10 â 12 GHz 100 W GaN Power Amplifier |
| 文件： | 总16页 (文件大小：577K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPM1021
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
®
Product Overview
Qorvo’s QPM1021 is a packaged, high power amplifier
fabricated on Qorvo’s production 0.15 um GaN on SiC
process. The QPM1021 operates from 10ꢀ–ꢀ12 GHz and
provides 100 W (50 dBm) of saturated output power with 20
dB of large signal gain and greater than 32 % power–added
efficiency.
The QPM1021 is packaged in a 10-lead 19.05 x 19.05 mm
bolt-down package, with a pure copper base for superior
thermal management. Both RF ports are internally DC
blocked and matched to 50 ohms allowing for simple
system integration.
Key Features
• Frequency Range: 10 – 12 GHz
• PSAT: > 50 dBm (PIN = 28 dBm)
• PAE: > 32% (PIN = 28 dBm)
The QPM1021 is ideally suited for both commercial and
military radar systems, satellite communications systems,
and data links.
• Large Signal Gain: > 20 dB (PIN = 28 dBm)
• Small Signal Gain: > 26 dB
Lead-free and RoHS compliant.
• Bias: VD = 28 V, IDQ = 2.0 A
• Package Dimensions: 19.05 x 19.05 x 4.52 mm
• Performance Under Pulsed Operation
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
• Radar
• Electronic Warfare
10
1
2
9
RF IN 3
8 RF OUT
7
6
4
5
Ordering Information
Top View
Part No.
Description
10–12 GHz 100 Watt GaN Power
Amplifier (10 pcs.)
QPM1021
QPM1021S2
QPM1021 Samples (2 pcs.)
QPM1021 Evaluation Board
QPM1021EVB
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
29.5 V
Parameter
Drain Voltage (VD)
Min
Typ
28
Max Units
V
A
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Drain Current (IDQ
)
2.0
−5 to 0 V
18.2 A
Operating Temperature
Range
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
−40
25
85
ꢀ°C
See plot pg. 11
Power Dissipation (PDISS), 85 °C, Pulsed;
PW = 150 us, DC = 20%
Input Power (PIN), 50 Ω, 85 °C , VD = 28 V,
Pulsed; PW = 150 us, DC = 20%
435 Watts
32 dBm
Input Power (PIN), 85 °C, VSWR 3:1, VD =
28 V, Pulsed; PW = 150 us, DC = 20%
38 dBm
Lead Soldering Temperature (30 seconds)
Storage Temperature
260 °C
-55 to 150 °C
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical Specifications
Parameter
Conditionsꢀ(1)
Min
Typ
Max
Units
Frequency Range
10
12
GHz
PIN = 28 dBm, Pulsed
10 GHz
11 GHz
12 GHz
51.3
50.5
50.4
Output Power
dBm
%
PIN = 28 dBm, Pulsed
PIN = 28 dBm, Pulsed
10 GHz
11 GHz
12 GHz
32.9
31.0
26.2
Power Added Efficiency
Power Gain
10 GHz
11 GHz
12 GHz
23.4
22.6
22.5
dB
POUT Temperature Coefficient
Small Signal Gain
Temp: 25 °C to 85 °C, PIN = 28 dBm)
–0.012
dB/°C
dB
10 GHz
11 GHz
12 GHz
26.6
24.0
20.2
Input Return Loss
13
11
dB
dB
Output Return Loss
Small Sig. Gain Temp. Coefficient Temp: –40°C to 85 °C
-0.110
28
dB/°C
V
Recommended Operating Voltage
Notes:
24
28
Test conditions unless otherwise noted: T = 25 °C , VD = 28 V, IDQ = 2.0 A, PW = 150 us, Duty Cycle = 20%
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 2.0 A, PIN = 28 dBm, PW = 150 us, Duty Cycle = 20%
Output Power vs. Freq. vs. Temp.
PAE vs. Freq. vs. Temp.
54
53
52
51
50
49
48
47
46
45
44
40
35
30
25
20
15
10
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
9.0
9.0
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
Gate Current vs. Freq. vs. Temp.
18
16
14
12
10
8
14
12
10
8
-40 C
+25 C
+85 C
6
4
6
2
4
0
2
-40 C
+25 C
+85 C
0
-2
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
Output Power vs. Freq. vs. Drain Voltage
PAE vs. Freq. vs Drain Voltage
54
53
52
51
50
49
48
47
46
45
44
40
35
30
25
20
15
10
24 V
26 V
28 V
24 V
26 V
28 V
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 2.0 A, PIN = 28 dBm, PW = 150 us, Duty Cycle = 20%
Drain Current vs. Freq. vs Drain Voltage
Gate Current vs. Freq. vs Drain Voltage
18
16
14
12
10
8
6
5
4
3
2
6
1
4
0
2
24 V
26 V
28 V
24 V
26 V
28 V
12.0
0
-1
9.0
9.0
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
9.0
9.5
9.5
9.5
10.0
10.5
11.0
11.5
12.5
13.0
Frequency (GHz)
PAE vs. Freq. vs. IDQ
Output Power vs. Freq. vs. IDQ
54
53
52
51
50
49
48
47
46
45
44
40
35
30
25
20
15
10
1.5 A
2.0 A
1.5 A
2.0 A
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
9.0
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
Drain Current vs. Freq. vs. IDQ
Gate Current vs. Freq. vs. IDQ
18
16
14
12
10
8
6
5
4
3
2
6
1
4
0
2
1.5 A
2.0 A
1.5 A
10.5 11.0
2.0 A
11.5
0
-1
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
9.0
10.0
12.0
12.5
13.0
Frequency (GHz)
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 2.0 A, PIN = 28 dBm, PW = 150 us, Duty Cycle = 20%
Output Power vs. PIN vs. Freq.
PAE vs. PIN vs. Freq.
55
50
45
40
35
30
25
45
40
35
30
25
20
15
10
5
10 GHz
12
11 GHz
16
12 GHz
24
10 GHz
16
11 GHz
24
12 GHz
28 32
0
0
4
8
20
28
32
0
4
8
12
20
Input Power (dBm)
Input Power (dBm)
Gain vs. PIN vs. Freq.
Drain Current vs. PIN vs. Freq.
40
35
30
25
20
15
10
18
16
14
12
10
8
6
4
2
10 GHz
12
11 GHz
16
12 GHz
24
10 GHz
11 GHz
16
12 GHz
24
0
0
4
8
20
28
32
0
4
8
12
20
28
32
Input Power (dBm)
Input Power (dBm)
Gate Current vs. PIN vs. Freq.
6
5
4
3
2
1
0
10 GHz
12
11 GHz
16
12 GHz
24
-1
0
4
8
20
28
32
Input Power (dBm)
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 2.0 A, Freq = 11 GHz, PW = 150 us, Duty Cycle = 20%
Output Power vs. PIN vs. Temp.
Output Power vs. PIN vs. Drain Voltage
55
50
45
40
35
30
25
20
55
50
45
40
35
30
25
20
-40 C
25 C
85 C
24
24 V
12
26 V
16
28 V
20
0
0
0
4
4
4
8
12
16
20
28
32
32
32
0
4
8
24
28
32
32
32
Input Power (dBm)
Input Power (dBm)
PAE vs. PIN vs. Temp.
PAE vs. PIN vs. Drain Voltage
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
-40 C
25 C
24
85 C
28
24 V
12
26 V
16
28 V
20
0
0
8
12
16
20
0
4
8
24
28
Input Power (dBm)
Input Power (dBm)
Drain Current vs. PIN vs. Temp.
Drain Current vs. PIN vs. Drain Voltage
18
16
14
12
10
8
18
16
14
12
10
8
6
6
4
4
2
2
-40 C
12
25 C
20
85 C
24
24 V
12
26 V
16
28 V
20
0
0
8
16
28
0
4
8
24
28
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 2.0 A, Freq = 11 GHz, PW = 150 us, Duty Cycle = 20%
Output Power vs. PIN vs. IDQ
PAE vs. PIN vs. IDQ
55
50
45
40
35
30
25
20
45
40
35
30
25
20
15
10
5
1.5 A
12
2.0 A
20
1.5 A
12
2.0 A
20
0
0
4
8
16
24
28
32
0
4
8
16
24
28
32
Input Power (dBm)
Input Power (dBm)
Drain Current vs. PIN vs. IDQ
18
16
14
12
10
8
6
4
2
1.5 A
12
2.0 A
20
0
0
4
8
16
24
28
32
Input Power (dBm)
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Performance Plots – Harmonics
Test conditions unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 2.0 A, PW = 150 us, Duty Cycle = 20%
2nd Harmonic vs. PIN vs. Temp.
F0 = 10 GHz
2nd Harmonic vs. PIN vs. Temp.
F0 = 11 GHz
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-40C
10
+25C
15
+85C
20
-40C
10
+25C
15
+85C
20
0
5
25
30
0
5
25
30
Input Power (dBm)
Input Power (dBm)
2nd Harmonic vs. PIN vs. Temp.
F0 = 12 GHz
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-40C
10
+25C
15
+85C
20
0
5
25
30
Input Power (dBm)
2nd Harmonic vs. PIN vs. Drain Voltage
F0 = 11 GHz
2nd Harmonic vs. PIN vs. IDQ
F0 = 11 GHz
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
24 V
10
26 V
15
28 V
20
1.5 A
2.0 A
20
0
5
25
30
0
5
10
15
25
30
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 2.0 A
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
35
30
25
20
15
10
5
35
30
25
20
15
10
5
24 V
10
26 V
11
28 V
12
-40 C
10
+25 C
11
+85 C
12
0
0
8
9
13
14
14
14
8
9
13
14
14
14
Frequency (GHz)
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
Input RL vs. Frequency vs. VD
0
0
-40 C
+25 C
+85 C
24 V
26 V
28 V
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
8
9
10
11
12
13
8
9
10
11
12
13
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
Output RL vs. Frequency vs. VD
0
-5
0
-5
24 V
26 V
28 V
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
-40 C
10
+25 C
11
+85 C
12
8
9
13
8
9
10
11
12
13
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 2.0 A
Gain vs. Freq. vs. IDQ
Input RL vs. Freq. vs. IDQ
35
30
25
20
15
10
5
0
1.5 A
2.0 A
-5
-10
-15
-20
-25
-30
1.5 A
2.0 A
12
0
8
9
10
11
13
14
8
9
10
11
12
13
14
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. IDQ
0
-5
1.5 A
2.0 A
-10
-15
-20
-25
-30
8
9
10
11
12
13
14
Frequency (GHz)
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
0.200
ºC/W
TBASE = 85°C, VD = +28ꢀV, IDQ = 2.0 A, PDISS = 56ꢀW
Channel Temperature, TCH (No RF)
96.1
°C
Thermal Resistance (θJC) (1)
0.226
146.3
ºC/W
°C
TBASE = 85ꢀ°C, VD = +28ꢀV, Freq = 12 GHz,
PIN = 28ꢀdBm, IDQ = 2.0 A, ID_Drive = 12.3ꢀA,
POUT = 48.8ꢀdBm, PDISS = 271.3ꢀW
Channel Temperature, TCH (Under RF)
Thermal Resistance (θJC) (1)
0.249
168.0
ºC/W
°C
TBASE = 85ꢀ°C, VD = +28ꢀV, Freq = 12 GHz,
PIN = 32ꢀdBm, IDQ = 2.0 A, ID_Drive = 15.6ꢀA,
POUT = 50.1ꢀdBm, PDISS = 333.2ꢀW
Channel Temperature, TCH (Under RF)
Notes:
1. Thermal resistance measured to back of package (T = 85 °C).
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Gate Current and Dissipated Power
Test conditions unless otherwise noted: T = 85 °C, IDQ = 2.0 A, PIN = 28 dBm, PW = 150 us, Duty Cycle = 20%
Power Dissipation vs. Frequency
QPM1021 Ig_max vs. TCH
600
500
400
300
200
100
0
300
280
260
240
220
200
180
160
140
120
100
Total Ig_max
24V 2A
26V 2A
28V 2A
110
120
130
140
150
160
170
180
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5 13.0
Frequency (GHz)
Channel Temperature (°C)
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Applications Information
C13
C14
1.0 uF
1.0 uF
R1
20 Ω
R2
20 Ω
C2
0.1 uF
C3
10 uF
1
10
9
2
Vd
Vg
RF IN 3
8 RF OUT
7
6
4
5
R3
20 Ω
R4
20 Ω
C5
0.1 uF
C6
10 uF
C15
C16
1.0 uF
1.0 uF
Notes:
1. VG & VD need to be biased from both sides.
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit to 17 A (peak), IG limit to 60 mA
2. Set VG to −5.0 V
1. Turn off RF signal
2. Reduce VG to −5.0 V. Ensure IDQ ~ 0mA
4. Set VD to 0 V
3. Set VD +28 V
4. Adjust VG more positive until IDQ = 2.0 A, peak
5. Apply RF signal
5. Turn off VD supply
6. Turn off VG supply
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
GND
GND
VG
VD
C3
C2
C13
C14
R1
R2
J1
J2
R3
R4
C5
C6
C15
C16
GND
GND
VG
VD
Bill of Materials
Reference Des.
Value
10 uF
0.1 uF
Description
Manuf.
Part Number
C3, C6
CAP, CER, 10 uF, 50 V, 20%, X5R, 1206
Various
C2, C5
CAP, 0.1uF, 10%, 50V, X7R, 0805
CAP, 1uF, 10%, 50V, X7R, 0603
Various
Various
Various
C13, C14, C15, C16
R1, R2, R3, R4
20 Ohm
2.92 mm
RES 0603 20Ohms 200mW 1% -55 to +155C
Southwest
Microwave
J1, J2
PCB
Female End Launch Connector
1092-02A-5
Rogers 6035HTC, 10 mil dielectric, 0.5 oz.
copper (gold plated)
-----
Rogers Corp.
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Mechanical Information and Bond Pad Description
NOTES:
1. MATERIALS
PACKAGE BASE: COPPER
FINISH: GOLD
LEADS: ALLOY 194
FINISH: GOLD
LID: LCP (LIQUID CRYSTAL POLYMER)
2. PART IS EPOXY SEALED
QPM1021
YYWW ZZZ
MXXX
3. PART MARKING
QPM1021 : PART NUMBER
YY : PART ASSEMBLY YEAR
WW : PART ASSEMBLY WEEK
ZZZ : SERIAL NUMBER
MYYY : BATCH ID
Tolerances are as follows (unless noted):
.XX = ꢁ.01
.XXX = ꢁ.005
.XXXX = ꢁ.0010
Package Lead Description
Pad No.
Symbol
Description
Gate voltage. Bias network is required; see Application Circuit on page 12. Gate must be biased from
both sides.
1, 5
VG
2, 4, 7, 9
Ground
RF Input
VD
Must be grounded to PCB
3
RF Input; matched to 50ꢀΩ, DC blocked, DC grounded
Drain voltage. Bias network is required; see Application Circuit on page 12.
RF Output; matched to 50ꢀΩ, DC blocked
6, 10
8
RF Output
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Assembly Notes
1.
2.
Carefully clean the PC board and package leads with alcohol. Allow it to dry fully.
To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and apply
thermal compound (Arctic Silver 5 recommended) or a 4 mil indium shim between the heat sink and the package.
3.
(The following is for information only. There are many variables in a second level assembly that Qorvo does not control, so
Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat sink. A suggested
final torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz., then torque to final value
Use the following tightening pattern:
4.
Apply no-flux solder to each pin of the QPM1021. The component leads should be manually soldered, and the package
should not be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after soldering is
recommended.
Data Sheet Rev. A, March 2019 | Subject to change without notice
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QPM1021
®
10ꢀ–ꢀ12 GHz 100 W GaN Power Amplifier
Handling Precautions
Parameter
Rating Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
1C
C3
NA
ESDAꢂ/ꢂJEDEC JS-001-2012
JEDEC JESD22-C101F
Caution!
ESD-Sensitive Device
Solderability
The component leads should be manually soldered, and the package should not be subjected to conventional reflow processes.
Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260 °C. The use of no-clean
solder to avoid washing after soldering is recommended.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2018 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. A, March 2019 | Subject to change without notice
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