EDB105S-C [RECTRON]
Bridge Rectifier Diode,;型号: | EDB105S-C |
厂家: | RECTRON SEMICONDUCTOR |
描述: | Bridge Rectifier Diode, 光电二极管 |
文件: | 总6页 (文件大小:82K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
EDB101S
THRU
EDB107S
GLASS PASSIVATED SUPER FAST
SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
FEATURES
* Surge overload rating - 40 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
DB-S
* Weight: 1.0 gram
(
)
)
.310 7.9
(
.290 7.4
(
)
.255 6.5
MECHANICAL DATA
(
)
.245 6.2
* Epoxy: Device has UL flammability classification 94V-O
.009
(
)
0.229
(
)
)
.013 .330
(
.003 .076
(
)
.410 10.4
(
)
)
.042 1.1
(
)
.360 9.4
(
.038 1.0
(
)
)
.060 1.524
(
.040 1.016
(8.8)
(7.8)
.346
.307
(
)
)
0.135 3.4
(
0.115 2.9
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Resistive or inductive load.
(
)
)
.205 5.2
(
.195 5.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T = 25oC unless otherwise noted)
A
RATINGS
SYMBOL
VRRM
EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S EDB107S UNITS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
VRMS
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
VDC
IO
100
Volts
Maximum Average Forward Output Current at T = 55oC
A
1.0
30
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
Amps
I2T
R
A2S
Typical Current Square Time
3.7
38
Q
J A
J L
0C/W
Typical Thermal Resistance (Note 3)
R
12
Q
pF
0 C
Typical Junction Capacitance (Note 2)
C
15
10
J
Operating and Storage Temperature Range
T
J,
T
STG
-55 to + 150
ELECTRICAL CHARACTERISTICS (At T = 25oC unless otherwise noted)
A
CHARACTERISTICS
SYMBOL
VF
UNITS
Volts
EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S EDB107S
1.05 1.35 1.70
Maximum Forward Voltage at 1.0A DC
@TA = 25oC
@TA = 100oC
MAmps
Maximum Reverse Current at Rated
5.0
100
50
IR
DC Blocking Voltage per element
MAmps
Maximum Reverse Recovery Time (Note 1)
nSec
trr
Note: 1.Test Conditions: I =0.5A,I =-1.0A,I =-0.25A.
RR
2016-04
REV: D
F
R
2.Measured at 1MHz and applied reverse voltage of 4.0 volts.
3.Thermal Resistance : Mounted on PCB.
RATING AND CHARACTERISTICS CURVES ( EDB101S THRU EDB107S )
WUU
+0.5A
7
ꢂꢃꢊ7
NONINDUCTIVE
ꢄꢃꢊ
NONINDUCTIVE
ꢋꢊꢌꢊꢀ
PULSE
GENERATOR
(NOTE 2)
'ꢅ8ꢅ7
0
ꢋꢊꢍꢊꢀ
25 Vdc
(appro[ꢀ
ꢋꢊꢌꢊꢀ
-0.25A
ꢄ
ꢋꢊꢍꢊꢀ
OSCILLOS2C3(
(NOTE 1)
NON-
INDUCTIVE
NOTES: 1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
-1.0A
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
ꢄFP
SET TIME BASE FOR 10 ns/cm
FIG.1 TEST CCIIRRCCUUIITT DDIIAAGGRRAAMM AANNDD RREEVVEERRSSEE RREECCOOVVEERRYY TTIIMMEE CCHHAARRAACCTTEERRIISSTTIICC
ꢁꢅꢃ
ꢄꢃꢃꢃ
ꢄꢃꢃ
2
7
ꢊ ꢊꢄꢃꢃꢊ&
$
ꢄꢅꢃ
ꢄꢃ
2
7
ꢊ ꢊꢁꢂꢊ&
$
ꢄꢅꢃ
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
ꢃ
ꢃꢅꢄ
ꢃ
ꢁꢂ
ꢂꢃ
ꢆꢂ
ꢄꢃꢃ
ꢄꢁꢂ
2
ꢄꢂꢃ
ꢄꢆꢂ
ꢃ
ꢁꢃ
ꢈꢃ
ꢇꢃ
ꢉꢃ
ꢄꢃꢃ
ꢄꢁꢃ
ꢄꢈꢃ
LEAD TEMPERATURE, ( &ꢀ
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.2 TTYYPPIICCAALL FFORWAARRDD CCUURRRREENNTT
DDEERRAATTIINNGG CCUURRVVEE
FIG.3 TTYYPPIICCAALL RREEVVEERRSSEE
CCHHAARRAACCTTEERRIISSTTIICCSS
RATING AND CHARACTERISTICS CURVES ( EDB101S THRU EDB107S )
ꢎꢂ
ꢎꢃ
ꢁꢂ
ꢁꢃ
ꢄꢃꢃ
ꢄꢃ
8.3ms Single Half Sine-Wave
(JEDED Method)
2
7 ꢊ ꢊꢁꢂꢊ&
-
ꢄꢅꢃ
ꢃꢅꢄ
ꢃꢅꢃꢄ
ꢄꢂ
ꢄꢃ
ꢂ
ꢃ
Pulse Width=300μS
1% Duty Cycle
ꢄ
ꢁ
ꢂ
ꢄꢃ
ꢁꢃ
ꢂꢃ
ꢄꢃꢃ
ꢁꢅꢈ
ꢃ
ꢃꢅꢈ
ꢃꢅꢉ
ꢄꢅꢁ
ꢄꢅꢇ
ꢁꢅꢃ
ꢁꢅꢉ
ꢎꢅꢁ
ꢎꢅꢇ
INSTANTANEOUS FORWARD VOLTAGE, (V)
NUMBER OF CYCLES AT 60Hz
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ꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊꢊ&++$$55$&7(5,67,&&66
),*ꢅꢂꢊ0$;,080ꢊ121ꢌ5(3(7,7,9(ꢊ)25:$5'
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ꢁꢃꢃ
ꢄꢃꢃ
ꢇꢃ
ꢈꢃ
ꢁꢃ
ꢄꢃ
ꢇ
ꢈ
2
ꢁ
ꢄ
7 ꢊ ꢊꢁꢂꢊ&
-
ꢃꢅꢄ
ꢃꢅꢈ
ꢁꢅꢃ
ꢈ
ꢄꢃ
ꢁꢃ
ꢈꢃ
ꢄꢃꢃ
ꢃꢅꢁ
REVERSE VOLTAGE, (V)
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RECTRON
Attachment information about EDB10XS
1. Internal Circuit
2. Marking on the body
-
+
Part No.
Rectron Logo
Voltage-code
E D B 1 0 X
Plant - code
1-------50V
4-------200V
5-------300V
6-------400V
7-------600V
~ V X X X ~
2-------100V
3-------150V
Year – code
(Y: Last digit of year &
A:2010,B:2011……)
Week – code
(WW:01~52)
3. Items marked on the inner box and carton
3.1 On the box (for –B)
CUSTOMER
TYPE
LOT NO.
QUANTITY
Q.A.
DATE
3.2 On the carton
CUSTOMER
TYPE
QUANTITY
LOT NO.
REMARK
PACKAGING OF DIODE AND BRIDGE RECTIFIERS
BULK PACK
INNER BOX SIZE
(mm)
CARTON SIZE
(mm)
PACKAGE
PACKING CODE
EA PER BOX
4,000
EA PER CARTON
24,000
WEIGHT(Kg)
18.44
DB-S
-C
450*140*84
464*305*283
REEL PACK
PACKAGE
COMPONENT
EA PER
INNER
BOX
PACKING
CODE
EA PER
REEL
REEL DIA CARTON SIZE EA PER
GROSS
TAPE SPACE
(mm)
SPACE
(mm)
(mm)
(mm)
CARTON WEIGHT(Kg)
DB-S
-T/W
1,000
1,000
9.5
330
360*355*360 8,000
52
9.8
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
相关型号:
EDB106S
GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere)
RECTRON
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