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FSYE23A0R4 [RENESAS]

8A, 200V, 0.33ohm, N-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3;
FSYE23A0R4
型号: FSYE23A0R4
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

8A, 200V, 0.33ohm, N-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3

开关 脉冲 晶体管
文件: 总8页 (文件大小:57K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

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FSYE33A0D1

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | SMT

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ETC

FSYE33A0R3

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | SMT

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FSYE33A0R4

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | SMT

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FSYE430D

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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INTERSIL

FSYE430D1

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FSYE430D3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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INTERSIL

FSYE430R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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INTERSIL

FSYE430R1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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FSYE430R3

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FSYE430R4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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INTERSIL

FSYE913A0D

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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FSYE913A0D1

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FSYE913A0D3

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INTERSIL

FSYE913A0R

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INTERSIL

FSYE913A0R1

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FSYE913A0R3

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FSYE913A0R4

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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FSYE923A0D

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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FSYE923A0D1

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FSYE923A0D1

Power Field-Effect Transistor, 6A I(D), 200V, 0.65ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD0.5, 3 PIN

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INFINEON