HVU133TRV [RENESAS]
15V, SILICON, PIN DIODE;
| 型号： | HVU133TRV |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 15V, SILICON, PIN DIODE PIN二极管 测试 光电二极管 |
| 文件： | 总5页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVU133
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G0436-0300
(Previous: ADE-208-377B)
Rev.3.00
Oct 29, 2004
Features
•
•
•
Low capacitance. (C1 = 1.0 pF max)
Low forward resistance. (rf = 0.7 Ω max)
Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVU133
P3
URP
Pin Arrangement
Cathod
1
. Cathode
2. Anode
Rev.3.00 Oct 29, 2004 page 1 of 4
HVU133
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
30
Unit
Reverse voltage
VR
V
mW
°C
Power dissipation
Junction temperature
Storage temperature
Pd
Tj
150
125
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
VR
Min
Typ
—
Max
—
Unit
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
30
—
—
—
—
—
V
nA
V
IR = 1µA
IR
—
100
0.85
1.00
0.90
0.70
VR = 25 V
IF = 2 mA
VF
C1
C6
rf
—
—
pF
= 1 V, f = 1 MHz
6 V, f = 1 MHz
, f = 100 MHz
—
Forward resistance
0.55
Rev.3.00 Oct 29, 2004 page 2 of 4
HVU133
Main Characteristic
10-2
10-10
10-4
10-6
Ta = 75°C
Ta = 50°C
10-11
10-12
10-13
10-8
10-10
10-12
Ta = 75°C
Ta = 50°C
Ta = 25°C
Ta = 25°C
10-14
0
15
20
25 30
0
0.2
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
0.4
0.6
0.8
1.0
ltage VR (V)
vs. Reverse voltage
f = 1MHz
f = 100MHz
102
101
100
10-1
10
1.0
0.1
10-5
10-4
Forward current IF (A)
10-3
10-2
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Fig.4 Forward resistance vs. Forward current
Rev.3.00 Oct 29, 2004 page 3 of 4
HVU133
Package Dimensions
As of January, 2003
Unit: mm
1.7 ± 0.15
2.5 ± 0.15
Package Code
JEDEC
JEITA
URP
Conforms
—
Mass (reference value)
0.004 g
Rev.3.00 Oct 29, 2004 page 4 of 4
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