NE3519M04-T2 [RENESAS]
RF SMALL SIGNAL, FET;
| 型号： | NE3519M04-T2 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | RF SMALL SIGNAL, FET |
| 文件： | 总13页 (文件大小：418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PreliminaryData Sheet
NE3519M04
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
R09DS0008EJ0100
Rev.1.00
Oct 21, 2010
FEATURES
•
Low noise figure and high associated gain
NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
•
Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
•
•
Satellite radio (SDARS, etc.)
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3519M04-T2
NE3519M04-T2-A
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
3 kpcs/reel
V85
bossed tape 8 mm wide
1 (Source), Pin 2 (Drain)
face the perforation side of
the tape
NE3519M04-T2B NE3519M04-T2B-A
15 kpcs/reel
Remark To order evaluation samples, please contact your nearby sale
Part number for sample order: NE3519M04
ABSOLUTE MAXIMUM RATINGS (T = +2s otherwise specified)
A
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
VGS
ID
R
Unit
V
V
mA
μA
mW
°C
Gate Current
IG
200
Total Power Dissipation Note
Channel Temperature
Storage Temperature
150
+150
−65 to +150
°C
Note: Mounted on 1.08 cm2 lass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 1 of 11
NE3519M04
RECOMMENDED OPERATING RANGE (T
A
= +25°C)
Parameter
Drain to Source Voltage
Drain Current
Symbol
VDS
MIN.
TYP.
MAX.
Unit
V
−
−
−
2
10
−
3
25
0
ID
mA
dBm
Input Power
Pin
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Symbol
IGSO
Test Conditions
VGS = −3.0 V
MIN.
−
TYP.
0.5
MAX.
10
Unit
μA
mA
V
IDSS
VDS = 2 V, VGS = 0 V
30
45
60
VGS (off)
gm
VDS = 2 V, ID = 50 μA
VDS = 2 V, ID = 10 mA
−0.25
80
−0.50
−
0.40
18.5
−0.75
−
0.70
−
mS
dB
dB
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 2 GHz
−
16.5
Associated Gain
Ga
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25C, unless otherwise
specified)
Parameter
Symbol
Test Conditions
ence Value
Unit
Gain 1 dB Compression Output
Power
PO (1 dB) VDS = 2 V, ID = 10 mA set (Non
f = 2 GHz
+11
dBm
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 2 of 11
NE3519M04
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
150
100
50
0
50
100
150
200
(°C)
250
Ambient Temperature T
A
DRAIN CURRENT vs.
DRAIN CUT vs.
GATE TO SOURCE VOLTAGE
DRAIN VOLTAGE
50
45
40
35
30
25
20
15
10
5
100
80
V
DS = 2 V
VGS = 0 V
–0.1 V
–0.2 V
–0.3 V
20
–0.4 V
–0.5 V
0
–1.0
–0.8
–0.6
–0.4
–0.
1
2
3
4
5
0
Gate to Source Voltage V
Drain to Source Voltage VDS (V)
MINIMUM NOISE FIG
ASSOCIATED GAIN ENCY
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
18
16
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
18
16
14
12
10
8
G
a
G
a
6
6
NFmin
NFmin
4
4
V
DS = 2 V
= 10 mA
VDS = 2 V
ID = 25 mA
2
2
0.2
0.0
0.2
0.0
ID
0
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 3 of 11
NE3519M04
MINIMUM NOISE FIGURE,
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
ASSOCIATED GAIN vs. DRAIN CURRENT
20
20
1.6
1.6
f = 2.0 GHz,
VDS = 2 V
f = 2.5 GHz,
VDS = 2 V
18
16
14
12
10
8
18
16
14
12
10
8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
G
a
G
a
NFmin
NFmin
6
6
4
4
0
5
10
15
20
25
30
5
25
0
10
15
20
30
Drain Current I
D
(mA)
Drain Current I
D
(mA)
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOUVOLTAGE
20
18
16
14
12
10
8
20
18
16
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
.2
0.0
f = 2.0 GHz, I
D
= 10 mA
f = 2.5 G
Ga
Ga
NFmin
NFmin
6
6
4
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
3.5
Drain to Source Voltage VDS (V
Drain to Source Voltage VDS (V)
Remark The graphs indicate nomstics.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 4 of 11
NE3519M04
INSERTION POWER GAIN, ISOLATION
vs. FREQUENCY
MAG, MSG, K FACTOR vs. FREQUENCY
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
20
15
10
5
25
20
15
10
5
V
DS = 2 V,
= 10 mA
V
DS = 2 V,
= 10 mA
ID
ID
–5
–10
–15
–20
–25
2
|S21
|
MSG
MAG
2
|S12
|
K factor
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN, ISOLATION
vs. FREQUENC
MAG, MSG, K FACTOR vs. FREQUENCY
5.0
25
20
15
10
5
0
25
20
5
V
DS = 2 V,
= 25 mA
V
DS = 2 V,
= 25 mA
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
D
ID
–5
–10
–15
–20
–25
MSG
MAG
2
|S12
|
K factor
0
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nomstics.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 5 of 11
NE3519M04
OUTPUT POWER, POWER GAIN, DRAIN CURRENT,
GATE CURRENT vs. INPUT POWER
25
20
15
10
5
80
70
60
50
40
30
20
10
G
P
f = 2 GHz, VDS = 2 V,
I
P
D
= 10 mA set,
O (1 dB) optimize
P
out
0
I
D
–5
–10
–15
I
G
–25
–30
–20
–15
–10
–5
0
5
Input Power Pin (dBm)
OUTPUT POWECURRENT
vs. INPUT PO
100
90
80
70
60
50
40
30
20
10
0
30
20
f1 = 2 000 MHz
f2 = 2 001 MHz
10
0
–10
–
–30
–40
–50
–60
–70
IM3 (L)
IM3 (H)
I
D
V
P
DS = 2 V, I
O (1 dB) optimize
D
= 10 mA set,
–30
–25
–20
–15
–10
–5
0
5
10
Input Power Pin (2 tone) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 6 of 11
NE3519M04
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 7 of 11
NE3519M04
MOUNTING PAD LAYOUT DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
1.6
0.6
Remark The mounting pad layout in this document is for reference only.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 8 of 11
NE3519M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
2.05 0.1
1.25 0.1
(Bottom View)
(1.05)
CONNECTIONS
1. Source
2. Drain
3. Source
4. Gate
Remark ( ): Reference
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 9 of 11
NE3519M04
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260°C or below
IR260
Time at peak temperature
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
Partial Heating
Peak temperature (terminal temperature)
Soldering time (per side of device)
: 350°C or below
: 3 seconds or less
HS350
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 10 of 11
NE3519M04
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Caution GaAs Products
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 11 of 11
Revision History
NE3519M04 Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Oct 21, 2010
−
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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