RJK03P6DPA-00-J5A [RENESAS]
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching; 内置SBD双N沟道功率MOS FET高速电源开关型号: | RJK03P6DPA-00-J5A |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Built in SBD Dual N-channel Power MOS FET High Speed Power Switching |
文件: | 总11页 (文件大小:241K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJK03P6DPA
MOS1 30 V, 15 A, 9.4 mΩ max.
MOS2 30 V, 45 A, 2.4 mΩ max.
Built in SBD Dual N-channel Power MOS FET
High Speed Power Switching
R07DS0905EJ0110
Rev.1.10
Nov 01, 2012
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-B
(Package name: WPAK-D(3))
2
3
4
9
D1 D1 D1
S1/D2
5
4
6
3
7
2
8
1
8
4
7
6
5
1
G1
8
9
G2
1, 8
Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
1
2
3
S2 S2 S2
(Bottom View)
5
6
7
MOS1
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
Unit
V
MOS1
MOS2
VDSS
VGSS
ID
30
±20
30
±20
V
15
45
A
Note1
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
ID(pulse)
60
180
A
IDR
15
45
A
Note 2
IAP
8.5
19
A
Note 2
EAS
7.23
10
36.1
30
mJ
W
°C
°C
Pch Note3
Tch
150
150
Tstg
–55 to +150
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc=25C
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 1 of 10
RJK03P6DPA
Preliminary
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IGSS
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 7.5 A, VGS = 10 V Note4
ID = 7.5 A, VGS = 4.5 V Note4
ID = 7.5 A, VDS = 5 V Note4
VDS = 10 V
—
±0.5
1
A
A
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
2.5
9.4
12.6
—
Static drain to source on state
resistance
7.8
9.7
36
m
m
S
Forward transfer admittance
Input capacitance
Ciss
Coss
Crss
Rg
850
150
80
1190
—
pF
pF
pF
VGS = 0
Output capacitance
Reverse transfer capacitance
Gate Resistance Note5
Total gate charge Note5
Gate to source charge
Gate to drain charge
Turn-on delay time
f = 1MHz
—
1.55
7.1
2.3
2.0
2.8
1.7
12.6
3.5
0.84
8.1
3.1
—
Qg
nC
nC
nC
ns
ns
ns
ns
V
VDD = 10 V
VGS = 4.5 V
ID = 15 A
Qgs
Qgd
td(on)
tr
—
—
—
VGS =10 V, ID = 7.5 A
Rise time Note5
—
VDD 10 V
RL = 1.3
Rg = 4.7
Turn-off delay time
td(off)
tf
—
Fall time
—
Body–drain diode forward voltage
VDF
1.09
—
IF = 15 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
trr
ns
IF =15 A, VGS = 0
diF/ dt = 500 A/s
Notes: 4. Pulse test
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 2 of 10
RJK03P6DPA
• MOS2
Preliminary
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IGSS
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D =1 mA
ID =22.5 A, VGS = 10 V Note4
ID = 22.5 A, VGS = 4.5 V Note4
ID = 22.5 A, VDS = 5 V Note4
VDS = 10 V
—
±0.5
1
A
mA
V
Zero gate voltage drain current
Gate to source cutoff voltage
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
2.5
2.4
3.2
—
Static drain to source on state
resistance
2.0
m
m
S
2.4
Forward transfer admittance
Input capacitance
114
3780
630
375
1.5
Ciss
Coss
Crss
Rg
5290
—
pF
pF
pF
VGS = 0
Output capacitance
Reverse transfer capacitance
Gate Resistance
f = 1MHz
—
3.0
—
Total gate charge
Qg
29.4
9.6
nC
nC
nC
ns
ns
ns
ns
V
VDD = 10 V
VGS = 4.5 V
ID = 45 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
—
10.0
6.7
—
—
VGS = 10 V, ID = 22.5 A
VDD 10 V
RL = 0.44
Rg = 4.7
4.6
—
Turn-off delay time
Fall time
td(off)
tf
66.8
21.5
0.40
9.4
—
—
Schottky Barrier diode forward voltage
VF
—
IF = 2 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
trr
—
ns
IF = 45 A, VGS = 0
diF/ dt = 500 A/s
Notes: 4. Pulse test
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 3 of 10
RJK03P6DPA
Preliminary
Main Characteristics
• MOS1
Power vs. Temperature Derating
Maximum Safe Operation Area
20
1000
100
10
15
10
5
this area is
Tc = 25 °C
1 shot Pulse
1
DS(on)
0.1
0
0.1
1
10
100
50
100
150
200
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Typical Output Characteristics
4.5 V
3.0V
Typical Transfer Characteristics
20
16
12
8
20
16
12
8
VDS = 5 V
Pulse Test
10 V
Pulse Test
2.8 V
2.6 V
25°C
4
4
Tc = 75°C
V
GS = 2.4 V
8
Drain to Source Voltage VDS (V)
–25°C
0
0
5
1
2
3
4
2
4
6
10
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
400
Pulse Test
Pulse Test
300
30
VGS = 4.5 V
10
200
100
ID = 20 A
10 V
3
10 A
5 A
1
0
4
8
12
16
20
1
3
10
30
100 300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 4 of 10
RJK03P6DPA
Preliminary
Static Drain to Source On State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
20
16
12
8
10000
3000
1000
Pulse Test
ID = 5 A, 10 A, 20 A
Ciss
VGS = 4.5 V
300
100
Coss
Crss
5 A, 10 A, 20 A
10 V
4
0
30
10
VGS = 0
f = 1 MHz
0
10
20
30
–25
0
25
50 75 100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
ID = 15 A
50
40
30
20
10
0
20
16
12
8
50
Pulse Test
10 V
40
30
20
10
5 V
VDD = 25 V
10 V
VDS
VGS
VGS = 0, –5 V
4
VDD = 25 V
10 V
0
20
0
0
0.4
0.8
1.2
1.6
2.0
4
8
12
16
Gate Charge Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
10
IAP = 8.5 A
VDD = 15 V
duty < 0.1%
Rg ≥ 50 Ω
8
6
4
2
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 5 of 10
RJK03P6DPA
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D = 1
0.5
0.3
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 12.5°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
1
2
2
L • IAP •
EAS
=
L
VDSS – VDD
VDS
Monitor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
VDD
0
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
Rg
D.U.T.
10%
10%
Vin
RL
Vout
10%
VDS
= 10 V
Vin
10 V
90%
90%
t
t
t
d(off)
t
f
d(on)
r
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 6 of 10
RJK03P6DPA
Preliminary
• MOS2 and Schottky Barrier Diode
Power vs. Temperature Derating
Maximum Safe Operation Area
40
1000
100
10
30
20
10
PW = 10 ms
Operation in
this area is
1
limited by RDS(on)
Tc = 25 °C
1 shot Pulse
0.1
0
0.1
50
100
150
200
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
40
30
20
10
50
40
30
20
10
2.7 V
4.5 V
100 VV
VDS = 5 V
Pulse Test
Pulse Test
2.6 V
2.5 V
25°C
Tc = 75°C
V
GS = 2.4 V
–25°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
160
Pulse Test
Pulse Test
120
80
30
10
ID = 20 A
40
3
1
VGS = 4.5 V
10 V
10 A
5 A
0
4
8
12
16
1
3
10
30
100 300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 7 of 10
RJK03P6DPA
Preliminary
Static Drain to Source On State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
10
10000
3000
1000
Pulse Test
8
Ciss
Coss
Crss
6
300
100
ID = 5 A, 10 A, 20 A
4
VGS = 4.5 V
2
0
30
10
VGS = 0
10 V
5 A, 10 A, 20 A
50 75 100 125 150
Case Temperature Tc C)
f = 1 MHz
0
10
20
30
–25
0
25
(
°
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
50
40
30
20
10
50
40
30
20
10
0
20
16
12
8
ID = 45 A
Pulse Test
10 V
5 V
VGS
VDD = 25 V
10 V
VDS
VGS = 0, –5 V
4
VDD = 25 V
10 V
0
0
0.4
0.8
1.2
1.6
2.0
0
40
60
80
100
20
Source to Drain Voltage VSD (V)
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
IAS = 19 A
VDD = 15 V
duty < 0.1%
Rg ≥ 50 Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 8 of 10
RJK03P6DPA
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D = 1
0.5
0.3
0.1
4.16
PW
T
D =
PDM
0.03
0.01
PW
T
shot pulse
1
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
VDSS
1
2
EAS
=
L • IAP
•
L
VDSS – VDD
2
VDS
Monitor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
VDD
0
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
10%
10%
Vin
RL
Vout
10%
VDS
= 10 V
Vin
10 V
90%
90%
t
t
t
d(off)
t
f
d(on)
r
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 9 of 10
RJK03P6DPA
Preliminary
Package Dimensions
Package Name
JEITA Package Code
RENESAS Code
PWSN0008DD-B
Previous Code
WPAK-D(3)V
MASS[Typ.]
0.07g
Unit : mm
WPAK-D(3)
⎯
5.1 0.2
0.85 Max
0.47 0.08
3.92 0.22
0.21 Typ
1.27 Typ
0.545Typ
0.945 0.16
2.92 0.22
4.9 0.1
(Sn plating)
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJK03P6DPA-00-J5A
3000 pcs
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0905EJ0110 Rev.1.10
Nov 01, 2012
Page 10 of 10
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
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