RJK0628JPE-00#J3 [RENESAS]
RJK0628JPE-00#J3;
| 型号： | RJK0628JPE-00#J3 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | RJK0628JPE-00#J3 |
| 文件： | 总7页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJK0628JPE
60 V - 160 A - N Channel MOS FET
High Speed Power Switching
R07DS0336EJ0200
Rev.2.00
Aug 29, 2012
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 2.6 m typ.
Capable of 4.5 V gate drive
Low input capacitance : Ciss = 5400 pF typ
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
2, 4
D
4
1. Gate
2. Drain
3. Source
4. Drain
1 G
1
2
3
S
3
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
Value
60
Unit
V
VDSS
VGSS
+20 / –5
160
V
ID
A
1
Drain peak current
ID (pulse) Note
640
A
3
Note
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
IDR
IDR (pulse) Note
160
A
1
640
A
2
Note
IAP
65
A
2
Note
Avalanche energy
EAR
362
mJ
W
C
C
3
Channel dissipation
Pch Note
192
4
Channel temperature
TchNote
175
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Tch = 25C, Rg 50
3. Tc = 25C
4. AEC-Q101 compliant
Thermal Impedance Characteristics
Channel to case thermal impedance ch-c: 0.781C/W
R07DS0336EJ0200 Rev.2.00
Aug 29, 2012
Page 1 of 6
RJK0628JPE
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Symbol
IGSS
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
10
10
2.0
3.2
4.9
—
Unit
A
A
V
Test Conditions
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
VGS = +20/–5 V, VDS = 0
VDS = 60 V, VGS = 0
IDSS
—
VGS(off)
RDS(on)
RDS(on)
Ciss
Coss
Crss
Qg
—
ID = 1 mA , VDS = 10 V
5
Static drain to source on state
resistance
2.6
3.6
5400
1400
1100
120
15
m
m
pF
pF
pF
nC
nC
nC
ns
ID = 80 A, VGS= 10 V Note
ID = 80 A, VGS= 4.5 V Note
VDS = 10 V,
5
Input capacitance
V
GS = 0
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Total gate charge
—
—
—
VDD = 25 V, VGS = 10 V,
ID = 80 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
—
35
—
20
—
ID= 80 A, RL = 0.375
VGS = 10 V, RG = 4.7
45
—
ns
Turn-off delay time
Fall time
td(off)
tf
120
60
—
ns
—
ns
5
Body-drain diode forward voltage
VDF
0.96
60
1.25
—
V
IF = 160 A, VGS = 0 Note
Body-drain diode reverse recovery
time
trr
ns
IF = 80 A, VGS = 0,
diF/dt = 100 A/s
Note: 5. Pulse test
R07DS0336EJ0200 Rev.2.00
Aug 29, 2012
Page 2 of 6
RJK0628JPE
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
100
10
200
150
100
50
Operation
in this area
is limited RDS(on)
1
DC Operation
0.1
Tc = 25°C
1 shot Pulse
0.01
0
50
100
150
200
0.1
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
200
160
120
80
1000
100
10 V
5 V
3 V
Tc = 175°C
10
1
25°C
−40°C
VGS = 2.6 V
0.1
40
0.01
VDS = 10 V
Pulse Test
Tc = 25°C
Pulse Test
0.001
0
5
10
0
1
2
3
4 5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
20
100
ID = 80 A
Pulse Test
Tc = 25°C
Pulse Test
15
10
10
Tc = 175°C
VGS = 4.5 V
5
25°C
−40°C
10 V
0
1
100
1000
0
4
8
12
16
20
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS0336EJ0200 Rev.2.00
Aug 29, 2012
Page 3 of 6
RJK0628JPE
Preliminary
Static Drain to Source On State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
10
8
10000
Pulse Test
ID = 80 A
Ciss
3000
1000
VGS = 4.5 V
6
Coss
Crss
4
10 V
300
100
2
Tc = 25°C
GS = 0
f = 1 MHz
V
0
−50
0
5
10
15
20
25
30
0
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
50
20
200
160
120
80
Tc = 25°C
ID = 160 A
Tc = 25°C
Pulse Test
VGS
10 V
40
30
20
10
16
12
8
VDD = 25 V
10 V
5 V
VDS
VGS = 0, −5 V
VDD = 25 V
10 V
5 V
4
40
0
0
0.4
0.8
1.2
1.6
2.0
0
40
80
120
160
200
Gate Charge Qg (nC)
Source to Drain Voltage VSD (V)
Avalanche Energy vs.
Channel Temperature Derating
IAP = 55 A
500
400
300
200
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
100
0
25
50
75
100 125 150 175
Channel Temperature Tch (°C)
R07DS0336EJ0200 Rev.2.00
Aug 29, 2012
Page 4 of 6
RJK0628JPE
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
D = 1
1
θch – c(t) = γs (t) • θch – c
θch – c = 0.781°C/W, Tc = 25°C
0.1
0.01
PW
T
PDM
D =
PW
T
100 μ
1 m
10 m
100 m
1
10
10 μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
VDSS
VDSS VDD
1
2
L
2
L • IAP •
EAR
=
VDS
Monitor
–
IAP
Monitor
V(BR)DSS
Rg
VDD
IAP
D. U. T
VDS
ID
Vin
50 Ω
15 V
VDD
0
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
10%
10%
Vin
RL
Vout
10%
VDS
= 30 V
Vin
10 V
90%
90%
t
t
t
t
f
d(on)
r
d(off)
R07DS0336EJ0200 Rev.2.00
Aug 29, 2012
Page 5 of 6
RJK0628JPE
Preliminary
Package Dimensions
Package Name
LDPAK(S)-(1)
JEITA Package Code
RENESAS Code
PRSS0004AE-B
Previous Code
MASS[Typ.]
1.30g
Unit: mm
SC-83
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 0.2
7.8
6.6
10.2 0.3
1.3 0.15
2.49 0.2
+ 0.2
0.1
– 0.1
2.2
1.37 0.2
0.4 0.1
+ 0.2
– 0.1
1.3 0.2
0.86
2.54 0.5
2.54 0.5
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJK0628JPE-00-J3
1000 pcs
Taping (Sinistrorse)
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0336EJ0200 Rev.2.00
Aug 29, 2012
Page 6 of 6
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
Colophon 2.2
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