RJK0629DPN [RENESAS]
N Channel Power MOS FET High-Speed Switching Use; N沟道功率MOS FET高速开关应用型号: | RJK0629DPN |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | N Channel Power MOS FET High-Speed Switching Use |
文件: | 总7页 (文件大小:109K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary
RJK0629DPN
N Channel Power MOS FET
High-Speed Switching Use
REJ03G1873-0100
Rev.1.00
Dec 15, 2009
Features
•
•
•
VDSS: 60 V
DS(on): 4.5 mΩ (Max)
ID: 85 A
R
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
4
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
1 G
1
2
3
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Symbol
Value
Unit
V
VDSS
60
±20
VGSS
V
Drain current
ID
ID (pulse) Note
IDR
A
85
1
Drain peak current
A
340
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
A
85
1
IDR (pulse) Note
A
340
2
Note
IAP
A
55
3
Channel dissipation
Pch Note
θch-c
Tch
W
°C/W
°C
°C
100
Channel to case thermal impedance
Channel temperature
1.25
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tc = 25°C, Tch ≤ 150°C, L = 100 μH
3. Value at Tc = 25°C
REJ03G1873-0100 Rev.1.00 Dec 15, 2009
Page 1 of 6
RJK0629DPN
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
V(BR)GSS
IDSS
Min
60
±20
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
ID = 100 μA, VGS = 0
IG = ±100 μA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±20 V, VDS = 0
ID = 1 mA, VDS = 10 V
ID = 43A, VGS = 10 VNote
ID = 43A, VGS = 10 VNote
—
—
V
—
1
μA
μA
V
IGSS
—
±10
2.0
194
4.5
6.6
—
Gate to source cutoff voltage
Static drain to source on state voltage
VGS(off)
VDS(on)
RDS(on)
—
4
4
161
3.75
4.9
4100
1000
780
85
mV
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
Static drain to source on state
resistance
4
ID = 43 A, VGS = 4.5 VNote
Input capacitance
Ciss
Coss
Crss
Qg
VDS = 10 V, VGS = 0
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Total gate charge
—
—
—
VDD = 25 V, VGS = 10 V,
ID = 85 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Qgs
Qgd
td(on)
tr
11
—
25
—
20
—
VDD = 30V, ID= 43A,
VGS = 10 V, RG = 4.7 Ω
Rise time
40
—
ns
Turn-off delay time
td(off)
tf
100
40
—
ns
Fall time
—
ns
4
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
0.92
50
1.2
—
V
IF = 85 A, VGS = 0Note
ns
IF = 85 A, VGS = 0,
diF/dt = 100 A/μs
Note: 4. Pulse test
REJ03G1873-0100 Rev.1.00 Dec 15, 2009
Page 2 of 6
RJK0629DPN
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
100
10
200
150
100
50
Operation in
this area is
limited by RDS(on)
1
0.1
Tc = 25°C
1 shot Pulse
0.01
0
50
100
150
200
0.1
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 V
Typical Transfer Characteristics
100
80
60
40
20
100
10
5 V
3 V
Tc = 175°C
25°C
1
0.1
VGS = 2.7 V
−40°C
0.01
0.001
V
DS = 10 V
Tc = 25°C
Pulse Test
Pulse Test
0
5
10
0
1
2
3
4 5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
20
100
ID = 43 A
Tc = 25°C
Pulse Test
Pulse Test
15
Tc = 175°C
10
10
VGS = 4.5 V
25°C
5
10 V
−40°C
0
1
20
100
16
0
4
8
12
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1873-0100 Rev.1.00 Dec 15, 2009
Page 3 of 6
RJK0629DPN
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
20
16
12
8
10000
Pulse Test
D = 43 A
I
Ciss
3000
1000
VGS = 4.5 V
Coss
Crss
300
100
4
10 V
Tc = 25°C
GS = 0
f = 1 MHz
V
0
−50
0
5
10
15
20
25
30
0
50
100
150
200
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
50
20
100
80
60
40
20
Tc = 25°C
Tc = 25°C
Pulse Test
VGS
I
D = 85 A
10 V
40
30
20
10
16
12
8
VDD = 25 V
10 V
5 V
VDS
VGS = 0, −5 V
VDD = 25 V
4
0
10 V
5 V
0
0.4
0.8
1.2
1.6
2.0
0
40
80
120
160
200
Source to Drain Voltage VSD (V)
Gate Charge Qg (nC)
Maximum Avalanche Energy vs.
Channel Temperature Derating
500
400
300
200
IAP = 55 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
100
0
25
50
75
100 125 150 175
Channel Temperature Tch (°C)
REJ03G1873-0100 Rev.1.00 Dec 15, 2009
Page 4 of 6
RJK0629DPN
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D = 1
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
0.1
0.01
PW
T
PDM
D =
PW
T
100 μ
1 m
10 m
100 m
1
10
10 μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
VDSS
VDSS – VDD
1
2
L
2
L • IAP •
EAR
=
VDS
Monitor
IAP
Monitor
V(BR)DSS
Rg
VDD
IAP
D. U. T
VDS
ID
Vin
15 V
50 Ω
VDD
0
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
10%
10%
Vin
RL
Vout
10%
VDS
Vin
10 V
= 30 V
90%
90%
t
t
t
t
f
d(on)
r
d(off)
REJ03G1873-0100 Rev.1.00 Dec 15, 2009
Page 5 of 6
RJK0629DPN
Preliminary
Package Dimensions
Package Name
TO-220AB
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Previous Code
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 ± 0.2
4.44 ± 0.2
9.5
8.0
+0.1
–0.08
1.26 ± 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 ± 0.1
0.5 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
Ordering Information
Part No.
Quantity
Shipping Container
RJK0629DPN-00-T2
600 pcs
Box (Tube)
REJ03G1873-0100 Rev.1.00 Dec 15, 2009
Page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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