RJK1575DPA-00J5A [RENESAS]
150V - 25A - MOS FET High Speed Power Switching; 150V - 25A - MOS FET高速电源开关
| 型号： | RJK1575DPA-00J5A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 150V - 25A - MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJK1575DPA
R07DS0858EJ0200
Rev.2.00
150V - 25A - MOS FET
High Speed Power Switching
Jan 08, 2013
Features
Very low on-resistance
RDS(on) = 0.038 typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)
Low gate charge
Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5
6
7 8
D D D D
8
4
7
6
5
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
G
1
2
3
S
1
S S
3
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Ratings
Unit
150
±30
V
V
VGSS
Note4
ID
25
A
Note1
Drain peak current
ID (pulse)
IDR
50
A
Body-drain diode reverse drain current
25
A
Note1
Body-drain diode reverse drain peak current
Avalanche current
IDR (pulse)
50
A
Note2
IAP
22
A
Note2
Avalanche energy
EAR
36.3
65
mJ
W
C/W
C
C
Channel dissipation
Pch Note3
ch-c
Tch
Channel to case thermal impedance
Channel temperature
1.93
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. STch = 25C, Tch 150C
3. Value at Tc = 25C
4. Limited by maximum safe operation area
R07DS0858EJ0200 Rev.2.00
Jan 08, 2013
Page 1 of 6
RJK1575DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
150
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
ID = 10 mA, VGS = 0
—
1
A
A
V
VDS = 150 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 12.5 A, VGS = 10 V Note5
IGSS
—
—
±1
VGS(off)
RDS(on)
2.5
—
—
4.5
0.048
Static drain to source on state
resistance
0.038
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
2200
240
89
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
Reverse transfer capacitance
Turn-on delay time
f = 1 MHz
—
22
—
ID = 12.5 A
VGS = 10 V
Rise time
33
—
RL = 6
Rg = 10
Turn-off delay time
td(off)
tf
47
—
Fall time
31
—
Total gate charge
Qg
37
—
VDD = 120 V
V
GS = 10 V
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
12
—
ID = 25 A
IF = 25 A, VGS = 0 Note5
13
—
0.81
88
1.45
—
ns
IF = 25 A, VGS = 0
diF/dt = 100 A/s
Notes: 5. Pulse test
R07DS0858EJ0200 Rev.2.00
Jan 08, 2013
Page 2 of 6
RJK1575DPA
Preliminary
Main Characteristics
Typical Output Characteristics
10 V
Maximum Safe Operation Area
50
40
30
20
10
0
1000
100
6 V
5.6 V
5.4 V
5.2 V
10
1
5 V
Operation in this area
is limited by RDS(on)
VGS = 4.8 V
0.1
Ta = 25°C
Pulse Test
Tc = 25°C
1 shot
0.01
0.1
1
10
100
1000
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Typical Transfer Characteristics
100
10
1
VGS = 10 V
Ta = 25°C
Pulse Test
VDS = 10 V
Pulse Test
Tc = 75°C
1
0.1
25°C
−25°C
0.1
0.01
0.01
0
2
4
6
8
1
10
100
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Body-Drain Diode Reverse
Recovery Time (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.16
0.12
0.08
0.04
0
1000
100
10
V
GS = 10 V
Pulse Test
25 A
ID = 50 A
12.5 A
di/dt = 100 A/μs
V
GS = 0, Ta = 25°C
1
10
100
−25
0
25 50 75 100 125 150
Reverse Drain Current IDR (A)
Case Temperature Tc (°C)
R07DS0858EJ0200 Rev.2.00
Jan 08, 2013
Page 3 of 6
RJK1575DPA
Preliminary
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Dynamic Input Characteristics (Typical)
10000
1000
100
400
16
VGS
ID = 25 A
Ta = 25 °C
Ta = 25°C
Ciss
300
200
12
8
VDD = 120 V
60 V
30 V
Coss
Crss
VDS
100
0
4
0
VDD = 120 V
60 V
30 V
V
GS = 0
f = 1 MHz
20
10
0
40
60
80
0
20
40
60
80
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
50
40
30
20
10
0
6
5
4
3
2
1
0
VGS = 0
Ta = 25°C
Pulse Test
VDS = 10 V
I
D = 10 mA
1 mA
0.1 mA
−25
0
25 50 75 100 125 150
0
0.4
0.8
1.2
1.6
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
R07DS0858EJ0200 Rev.2.00
Jan 08, 2013
Page 4 of 6
RJK1575DPA
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
0.2
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
0.05
ch – c = 1.93°C/W, Tc = 25°C
PW
T
PDM
D =
0.03
0.01
PW
T
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
10 Ω
Vout
10%
VDD
= 100 V
Vin
10 V
90%
90%
t
t
t
t
f
d(on)
r
d(off)
R07DS0858EJ0200 Rev.2.00
Jan 08, 2013
Page 5 of 6
RJK1575DPA
Preliminary
Package Dimensions
Package Name
WPAK(3F)
JEITA Package Code
RENESAS Code
PWSN0008DE-A
Previous Code
WPAK(3F)V
MASS[Typ.]
0.075g
Unit: mm
⎯
4.23Typ
1.27Typ
0.85Max
5.1 0.2
3.92 0.22
1.27Typ
0.21Typ
0.545Typ
0.42 0.08
4.90 0.1
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJK1575DPA-00#J5A
3000 pcs
Taping
R07DS0858EJ0200 Rev.2.00
Jan 08, 2013
Page 6 of 6
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
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