RJK1590DP3-A0 [RENESAS]
High Speed Power Switching;
| 型号： | RJK1590DP3-A0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High Speed Power Switching |
| 文件： | 总8页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
RJK1590DP3-A0
R07DS1255EJ0100
Rev.1.00
150 V - 1 A - MOS FET
Mar 30, 2015
High Speed Power Switching
Features
Capable of 2.5 V gate drive
Low drive current
Low on-resistance
RDS (on) = 1.5 typ. (at VGS = 4 V)
Outline
RENESAS Package code: PRSP0004ZB-A
(Package name: SOT-223)
D
4
1. Gate
G
2. Drain
3. Source
4. Drain
3
2
1
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Symbol
Value
150
10
1
Unit
V
VDSS
VGSS
ID
Gate to source voltage
V
Drain current
A
Note 1
Drain peak current
ID (pulse)
4
A
Body-drain diode reverse drain current
Channel dissipation
IDR
Pch
1
A
1.04
120
150
W
Channel to ambient thermal impedance
Channel temperature
ch-a
Tch
C/W
C
C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 1 of 7
RJK1590DP3-A0
Electrical Characteristics
(Ta = 25C)
Item
Symbol
V (BR) DSS
V (BR) GSS
IGSS
Min
150
10
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VGS = 8 V, VDS = 0
VDS = 150 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 0.5 A, VGS = 4 V Note 2
ID = 0.5 A, VGS = 2.5 V Note 2
VDS = 10 V
—
—
V
—
10
1
A
A
V
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
IDSS
—
—
VGS (off)
RDS (on)
RDS (on)
Ciss
Coss
Crss
Qg
0.5
—
—
1.5
1.95
2.5
—
1.5
1.9
98
31
14
3.5
0.5
1.8
8
—
Input capacitance
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
VGS = 0
Output capacitance
Reverse transfer capacitance
Total gate charge
—
—
f = 1 MHz
—
—
—
—
VDD = 100 V
VGS = 4 V
ID = 1 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Qgs
—
—
Qgd
—
—
td (on)
tr
td (off)
tf
—
—
VGS = 4 V
ID = 0.5 A
RL = 60
Rise time
—
12
34
19
1.0
60
—
Turn-off delay time
—
—
Fall time
—
—
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
—
1.5
—
IF = 1 A, VGS = 0 Note 2
IF = 1 A, VGS = 0
trr
—
ns
diF/dt = 100 A/s
Notes: 2. Pulse test
3. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 2 of 7
RJK1590DP3-A0
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
2.5
2.0
1.5
1.0
0.5
0
10
3
Ta = 25°C
Pulse Test
2.5 V
4 V
3 V
1
0.3
0.1
2 V
Operation in
this area is
limited by RDS(on)
0.03
0.01
VGS = 1.5 V
0.003
0.001
Ta = 25°C
1 shot
0.1 0.3
1
3
10 30 100 300 1000
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage (Typical)
Typical Transfer Characteristics
3
5
4
3
2
1
0
Ta = 25°C
VDS = 10 V
Pulse Test
Pulse Test
Tc = –25°C
2
25°C
75°C
ID = 1 A
1
0
0.5 A
0.2 A
0
2
4
6
8
10
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
5
Ta = 25°C
Pulse Test
Ta = 25°C
Pulse Test
5
0.2 A
4
0.5 A
VGS = 2.5 V
2
1
ID = 1 A
3
4 V
VGS = 2.5 V
0.2 A
2
0.5 A
0.5
ID = 1 A
1
4 V
0.2
0.1
0
0.1
0.3
1
3
10
–25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Drain Current ID (A)
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 3 of 7
RJK1590DP3-A0
Body-Drain Diode Reverse
Recovery Time (Typical)
Forward Transfer Admittance vs.
Drain Current (Typical)
10
3
1000
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
300
100
Tc = –25°C
1
25°C
0.3
0.1
30
10
75°C
0.03
0.01
3
1
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
0.01 0.03 0.1 0.3
1
3 10
Drain Current ID (A)
Reverse Drain Current IDR (A)
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics (Typical)
8
160
1000
300
ID = 1 A
VGS = 0
f = 1 MHz
Ta = 25°C
Ta = 25°C
120
80
40
0
6
4
Ciss
VDD = 100 V
50 V
V
DS
100
25 V
30
10
Coss
VGS
2
0
VDD = 100 V
50 V
Crss
3
1
25 V
0
2
4
6
8
10
0
10
20
30
40
50
Gate Charge Qg (nC)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Switching Characteristics (Typical)
td(off)
100
4
3
2
1
0
Ta = 25°C
Pulse Test
30
10
tf
tr
td(on)
5 V
VGS = 0, –5 V
3
1
VGS = 4 V, VDD = 30 V
PW = 5 μs, duty ≤ 1 %
Ta = 25°C
0.1
0.3
1
3
10
0
1
2
Drain Current ID (A)
Source to Drain Voltage VSDF (V)
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 4 of 7
RJK1590DP3-A0
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
1.5
1.0
VDS = 10 V
Pulse Test
ID = 10 mA
1 mA
0.5
0
0.1 mA
–25
0
25
50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D = 1
0.5
0.3
0.1
θch – a(t) = γs (t) • θch – a
θch – a = 120°C/W, Ta = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 μ
100 μ
1 m
10 m
100 m
1
10
100
1000
Pulse Width PW (s)
Waveform
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
10%
10%
D.U.T.
RL
Vin
Vout
10%
VDD
= 30 V
Vin
4 V
50 Ω
90%
90%
d(off)
t
t
t
t
f
d(on)
r
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 5 of 7
RJK1590DP3-A0
Package Dimensions
RENESAS Code
Previous Code
MASS (Typ) [g]
Package Name
JEITA Package Code
0.12
SOT-223
—
PRSP0004ZB-A
SOT-223A
Unit: mm
D
b2
0.08
M
0.10
C B
4
A
C
C
SEE
DETAIL A
Pin No.1
2
3
B
B
b
M
0.10 C B
e
e1/2
e1
GAUGE PLANE
L
Dimensions in millimeters
Min Nom Max
Reference
Symbol
DETAIL A
A
A1
A2
b
b2
c
D
E
E1
e
e1
L
1.52
0.02
1.50
0.60
2.90
0.23
6.30
6.70
3.30
1.66 1.80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.10
1.70
0.80
3.10
0.33
6.70
7.30
3.70
b
b2
B-B Cross Section
C-C Cross Section
2.30 BASIC
4.60 BASIC
0.90
⎯
1.10
© 2015 Renesas Electronics Corporation. All rights reserved.
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 6 of 7
RJK1590DP3-A0
Ordering Information
Orderable Part No.
Quantity
Shipping Container
RJK1590DP3-A0#J2
3000 pcs
Taping
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 7 of 7
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