IGP30N60H3 [ROCHESTER]
60A, 600V, N-CHANNEL IGBT, TO-220AB, GREEN, PLASTIC PACKAGE-3;
| 型号： | IGP30N60H3 |
| 厂家： | 
Rochester Electronics |
| 描述： | 60A, 600V, N-CHANNEL IGBT, TO-220AB, GREEN, PLASTIC PACKAGE-3 局域网 双极性晶体管 功率控制 |
| 文件： | 总15页 (文件大小：2294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
High speed IGBT in Trench and Fieldstop technology
IGP30N60H3
600V high speed switching series third generation
Datasheet
Industrial & Multimarket
IGP30N60H3
High speed switching series third generation
High speed IGBT in Trench and Fieldstop technology
C
E
Features:
TRENCHSTOPTM technology offering
• very low VCEsat
• low EMI
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
G
Applications:
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
Key Performance and Package Parameters
Type
V†Š
I†
V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà
1.95V 175°C
Marking
Package
IGP30N60H3
600V
30A
G30H603
PG-TO220-3
Rev. 1.2 2010-07-26
2
IGP30N60H3
High speed switching series third generation
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 2
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 4
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Rev. 1.2 2010-07-26
3
IGP30N60H3
High speed switching series third generation
Maximum ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V†Š
600
V
DC collector current, limited by TÝÎÑÈà
T† = 25°C
T† = 100°C
I†
60.0
30.0
A
Pulsed collector current, tÔ limited by TÝÎÑÈà
Turn off safe operating area V†Š ù 600V, TÝÎ ù 175°C
Gate-emitter voltage
I†ÔÛÐÙ
-
120.0
120.0
±20
A
A
V
V•Š
Short circuit withstand time
V•Š = 15.0V, V†† ù 400V
Allowed number of short circuits < 1000
Time between short circuits: ú 1.0s
TÝÎ = 150°C
tȠ
µs
5
Power dissipation T† = 25°C
Power dissipation T† = 100°C
187.0
94.0
PÚÓÚ
W
Operating junction temperature
Storage temperature
TÝÎ
-40...+175
-55...+150
°C
°C
TÙÚÃ
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
Thermal Resistance
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction - case
RÚÌñÎ-Êò
RÚÌñÎ-Èò
0.80
62
K/W
K/W
Thermal resistance
junction - ambient
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Static Characteristic
Collector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 2.00mA
600
-
-
V
V
V
V•Š = 15.0V, I† = 30.0A
TÝÎ = 25°C
Collector-emitter saturation voltage V†ŠÙÈÚ
TÝÎ = 125°C
-
-
-
1.95 2.40
2.30
2.50
-
-
TÝÎ = 175°C
Gate-emitter threshold voltage
V•ŠñÚÌò
I† = 0.43mA, V†Š = V•Š
4.1
5.1
5.7
V†Š = 600V, V•Š = 0V
TÝÎ = 25°C
TÝÎ = 175°C
Zero gate voltage collector current I†Š»
-
-
-
-
40.0 µA
1000.0
Gate-emitter leakage current
Transconductance
I•Š»
gËÙ
V†Š = 0V, V•Š = 20V
V†Š = 20V, I† = 30.0A
-
-
-
100
-
nA
S
16.0
Rev. 1.2 2010-07-26
4
IGP30N60H3
High speed switching series third generation
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Dynamic Characteristic
Input capacitance
CÍþÙ
-
-
-
1630
107
50
-
-
-
Output capacitance
CÓþÙ
CØþÙ
V†Š = 25V, V•Š = 0V, f = 1MHz
pF
Reverse transfer capacitance
V†† = 480V, I† = 30.0A,
V•Š = 15V
Gate charge
Q•
LŠ
-
-
165.0
7.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ú 1.0s
V•Š = 15.0V, V†† ù 400V,
t»† ù 5µs
TÝÎ = 150°C
I†ñ»†ò
-
-
A
160
Switching Characteristic, Inductive Load, at TÝÎ = 25°C
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
tÁñÓÒò
tØ
TÝÎ = 25°C,
V†† = 400V, I† = 30.0A,
V•Š = 0.0/15.0V,
r• = 10.5Â, Lÿ = 95nH,
Cÿ = 67pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode (IKW30N60H3) reverse
recovery.
-
-
-
-
-
-
-
18
22
-
-
-
-
-
-
-
ns
ns
Turn-off delay time
Fall time
tÁñÓËËò
tË
207
22
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
EÓÒ
EÓËË
EÚÙ
0.73
0.44
1.17
mJ
mJ
mJ
Switching Characteristic, Inductive Load, at TÝÎ = 175°C
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
tÁñÓÒò
tØ
TÝÎ = 175°C,
V†† = 400V, I† = 30.0A,
V•Š = 0.0/15.0V,
r• = 10.5Â, Lÿ = 95nH,
Cÿ = 67pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode (IKW30N60H3) reverse
recovery.
-
-
-
-
-
-
-
18
22
-
-
-
-
-
-
-
ns
ns
Turn-off delay time
Fall time
tÁñÓËËò
tË
239
23
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
EÓÒ
EÓËË
EÚÙ
0.95
0.60
1.55
mJ
mJ
mJ
Rev. 1.2 2010-07-26
5
IGP30N60H3
High speed switching series third generation
80
70
60
50
40
30
20
10
0
100
10
1
tÔ=1µs
10µs
50µs
100µs
200µs
500µs
DC
T†=80°
T†=110°
T†=80°
I
I
T†=110°
0.1
1
10
f, SWITCHING FREQUENCY [kHz]
100
1000
1
10
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
100
1000
Figure 1. Collector current as a function of switching
frequency
Figure 2. Forward bias safe operating area
(D=0, T†=25°C, TÎù175°C; V•Š=15V)
(TÎù175°C, D=0.5, V†Š=400V, V•Š=15/0V,
R•=10,5Â)
200
175
150
125
100
75
60
50
40
30
20
10
0
I
P
50
25
0
25
50
75
T†, CASE TEMPERATURE [°C]
100
125
150
175
25
50
75
T†, CASE TEMPERATURE [°C]
100
125
150
175
Figure 3. Power dissipation as a function of case
temperature
(TÎù175°C)
Figure 4. Collector current as a function of case
temperature
(V•Šú15V, TÎù175°C)
Rev. 1.2 2010-07-26
6
IGP30N60H3
High speed switching series third generation
120
100
80
60
40
20
0
120
100
80
60
40
20
0
V•Š=20V
17V
15V
13V
11V
9V
V•Š=20V
17V
15V
13V
11V
9V
7V
7V
5V
5V
I
I
0
1
2
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
3
4
5
6
0
1
2
3
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
4
5
6
7
8
Figure 5. Typical output characteristic
(TÎ=25°C)
Figure 6. Typical output characteristic
(TÎ=175°C)
100
4.0
TÎ=25°C
TÎ=175°C
I†=15A
I†=30A
I†=60A
90
3.5
3.0
2.5
2.0
1.5
1.0
80
70
60
50
40
30
20
10
0
I
V
5
6
7
V•Š, GATE-EMITTER VOLTAGE [V]
8
9
10
11
12
0
25
50
TÎ, JUNCTION TEMPERATURE [°C]
75
100
125
150
175
Figure 7. Typical transfer characteristic
(V†Š=20V)
Figure 8. Typical collector-emitter saturation voltage
as a function of junction temperature
(V•Š=15V)
Rev. 1.2 2010-07-26
7
IGP30N60H3
High speed switching series third generation
1000
100
10
tÁñÓËËò
tË
tÁñÓÒò
tØ
tÁñÓËËò
tË
tÁñÓÒò
tØ
100
t
t
10
5
10 15 20 25 30 35 40 45 50 55 60
I†, COLLECTOR CURRENT [A]
3
8
13
18
23
R•, GATE RESISTOR [Â]
28
33
Figure 9. Typical switching times as a function of
collector current
Figure 10. Typical switching times as a function of
gate resistor
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, R•=10,5Â, test circuit in Fig.
E)
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, I†=30A, test circuit in Fig. E)
6.0
tÁñÓËËò
tË
typ.
min.
tÁñÓÒò
tØ
max.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
100
t
V
10
25
50
75
TÎ, JUNCTION TEMPERATURE [°C]
100
125
150
175
0
25
50
75
TÎ, JUNCTION TEMPERATURE [°C]
100
125
150
175
Figure 11. Typical switching times as a function of
junction temperature
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(I†=0.43mA)
(ind. load, V†Š=400V, V•Š=15/0V,
I†=30A, R•=10,5Â, test circuit in Fig. E)
Rev. 1.2 2010-07-26
8
IGP30N60H3
High speed switching series third generation
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
EÓËË
EÓÒ*
EÚÙ*
EÓËË
EÓÒ*
EÚÙ*
E
E
5
10 15 20 25 30 35 40 45 50 55 60
I†, COLLECTOR CURRENT [A]
3
8
13
18
23
R•, GATE RESISTOR [Â]
28
33
Figure 13. Typical switching energy losses as a
function of collector current
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, R•=10,5Â, test circuit in Fig.
E)
Figure 14. Typical switching energy losses as a
function of gate resistor
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, I†=30A, test circuit in Fig. E)
2.00
2.00
EÓËË
EÓÒ*
EÓËË
EÓÒ*
EÚÙ*
EÚÙ*
1.75
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.50
1.25
1.00
0.75
0.50
0.25
0.00
E
E
25
50
75
TÎ, JUNCTION TEMPERATURE [°C]
100
125
150
175
200
250
300
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
350
400
450
Figure 15. Typical switching energy losses as a
function of junction temperature
Figure 16. Typical switching energy losses as a
function of collector emitter voltage
(ind. load, TÎ=175°C, V•Š=15/0V, I†=30A,
R•=10,5Â, test circuit in Fig. E)
(ind load, V†Š=400V, V•Š=15/0V, I†=30A,
R•=10,5Â, test circuit in Fig. E)
Rev. 1.2 2010-07-26
9
IGP30N60H3
High speed switching series third generation
16
14
12
10
8
120V
480V
1000
100
10
CÍÙÙ
CÓÙÙ
CØÙÙ
6
C
4
V
2
0
0
20
40
60 80 100 120 140 160 180
Q•Š, GATE CHARGE [nC]
0
10
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
20
30
Figure 17. Typical gate charge
(I†=30A)
Figure 18. Typical capacitance as a function of
collector-emitter voltage
(V•Š=0V, f=1MHz)
380
330
280
230
180
130
80
15
12
9
6
3
t
I
0
10
12
14
V•Š, GATE-EMITTER VOLTAGE [V]
16
18
20
10
11
12
V•Š, GATE-EMITTER VOLTAGE [V]
13
14
15
Figure 19. Typical short circuit collector current as a
function of gate-emitter voltage
(V†Šù400V, start atTÎ=25°C)
Figure 20. Short circuit withstand time as a function
of gate-emitter voltage
(V†Šù400V, start at TÎù150°C)
Rev. 1.2 2010-07-26
10
IGP30N60H3
High speed switching series third generation
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
Z
i:
1
2
3
rÍ[K/W]: 0.05279329 0.1938242 0.2577884 0.2956575
4
Í[s]:
6.5E-5
4.7E-4
6.1E-3
0.06477749
τ
0.001
1E-6
1E-5
1E-4
0.001
0.01
tÔ, PULSE WIDTH [s]
0.1
1
Figure 21. IGBT transient thermal impedance
(D=tÔ/T)
Rev. 1.2 2010-07-26
11
IGP30N60H3
High speed switching series third generation
Rev. 1.2 2010-07-26
12
IGP30N60H3
High speed switching series third generation
Rev. 1.2 2010-07-26
13
IGP30N60H3
High speed switching series third generation
Revision History
IGP30N60H3
Revision: 2010-07-26, Rev. 1.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
1.1
1.2
2010-02-01
-
-
Preliminary datasheet
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Published by
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81726 München, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support
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reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of
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persons may be endangered.
Rev. 1.2 2010-07-26
14
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