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KSC2335RTU [ROCHESTER]

7A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN;
KSC2335RTU
型号： KSC2335RTU
厂家： Rochester Electronics    Rochester Electronics
描述：

7A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN

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KSC2335  
High Speed, High Voltage Switching  
•
Industrial Use  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
500  
V
V
V CEO  
VEBO  
IC  
400  
7
V
7
15  
A
ICP  
A
IB  
3.5  
A
PC  
Collector Dissipation (T =25°C)  
1.5  
W
W
°C  
°C  
a
P
Collector Dissipation (T =25°C)  
40  
C
C
TJ  
Junction Temperature  
150  
TSTG  
Storage Temperature  
- 55 ~ 150  
* PW≤300µs, Duty Cycle≤10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
400  
450  
Max.  
Units  
V
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 3A, I = 0.6A, L = 1mH  
V
V
CEO  
C
C
B1  
(sus)1  
= 3A, I = -I = 0.6A  
B1 B2  
CEX  
V
(off) = -5V, L = 180µH, Clamped  
BE  
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I
= 6A,I = 2A, I = -0.6A  
400  
V
CEX  
C
B1  
B2  
V
V
V
(off) = -5V, L = 180µH, Clamped  
BE  
CB  
CE  
I
I
I
I
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
= 400V, I = 0  
10  
1
µA  
mA  
µA  
CBO  
CER  
E
= 400V, R = 51Ω @ T =125°C  
BE  
C
V
= 400V, V (off)= -1.5V  
10  
1
CEX1  
CEX2  
CE  
BE  
V
= 400V, V (off)= -1.5V @  
mA  
CE  
BE  
T =125°C  
C
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
10  
µA  
EBO  
EB  
C
h
h
h
V
V
V
= 5V, I = 0.1A  
20  
20  
10  
80  
80  
1
FE  
CE  
CE  
CE  
C
= 5V, I = 1A  
FE2  
FE3  
C
= 5V, I = 3A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn ON Time  
I
I
= 3A, I = 0.6A  
1
1.2  
1
V
V
CE  
BE  
C
C
B
(sat)  
= 3A, I = 0.6A  
B
t
t
t
V
I
=150V, I = 3A  
µs  
µs  
µs  
ON  
CC  
C
= -I = 0.6A  
Storage Time  
B1  
B2  
2.5  
1
STG  
F
R = 50Ω  
L
Fall Time  
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
20 ~ 40  
30 ~ 60  
40 ~ 80  
FE2  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
IB=0.45A  
IB=0.40A  
5
1000  
100  
10  
IB=0.50A  
VCE = 5 V  
Pulsed  
IB=0.35A  
IB=0.30A  
4
3
2
1
0
IB=0.25A  
IB=0.20A  
IB=0.15A  
IB=0.10A  
IB=0.05A  
1
0.01  
0.1  
1
10  
0
1
2
3
4
5
Ic[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
160  
10  
IC = 5 IB  
Pulsed  
140  
120  
100  
80  
1
VBE(SAT)  
S/b Limited  
60  
0.1  
40  
Dissipation Limited  
VCE(SAT)  
20  
0
0.01  
0.01  
0
50  
100  
150  
200  
0.1  
1
10  
TC [oC], CASE TEMPERATURE  
VCB[V], COLLECTOR-BASE VOLTAGE  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Derating Curve of Safe Operating Areas  
10  
8
100  
Single Pulse  
PW = 10 us  
10  
50 us  
6
Dissipation Limoted  
1
0.1  
0.1 ms  
0.3 ms  
S/b Limited  
4
1 ms  
100 ms  
2
0.01  
1E-3  
10 ms  
0
0
100  
200  
300  
400  
500  
1
10  
100  
1000  
10000  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Reverse Bias Safe Operating Area  
Figure 6. Forward Bias Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Package Demensions  
TO-220  
4.50 ±0.20  
9.90 ±0.20  
(8.70)  
+0.10  
1.30  
–0.05  
ø3.60 ±0.10  
(45  
°
)
1.27 ±0.10  
1.52 ±0.10  
0.80 ±0.10  
+0.10  
–0.05  
0.50  
2.40 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
10.00 ±0.20  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  
Product Folder - Fairchild P/N KSC2335 - NPN Epitaxial Silicon Transistor  
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KSC2335YTU  
KSC2335R  
Product status  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Pricing*  
Package type  
TO-220  
Leads  
Packing method  
RAIL  
$0.495  
$0.495  
$0.495  
$0.495  
$0.495  
$0.495  
3
3
3
3
3
3
TO-220  
BULK  
KSC2335O  
TO-220  
BULK  
KSC2335RTU  
KSC2335OTU  
KSC2335Y  
TO-220  
RAIL  
TO-220  
RAIL  
TO-220  
BULK  
* 1,000 piece Budgetary Pricing  
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Product Folder - Fairchild P/N KSC2335 - NPN Epitaxial Silicon Transistor  

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