NTNUS3171PZT5G [ROCHESTER]
150mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, ULTRA SMALL, ULTRA THIN, CASE 524AA-01, 3 PIN;
| 型号： | NTNUS3171PZT5G |
| 厂家： | 
Rochester Electronics |
| 描述： | 150mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, ULTRA SMALL, ULTRA THIN, CASE 524AA-01, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：786K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTNUS3171PZ
Small Signal MOSFET
−20 V, −200 mA, Single P−Channel,
1.0 x 0.6 mm SOT−1123 Package
Features
http://onsemi.com
• Single P−Channel MOSFET
• Offers a Low R
Solution in the Ultra Small 1.0 x 0.6 mm
DS(on)
V
R
MAX
I Max
D
(BR)DSS
DS(ON)
Package
3.5 W @ −4.5 V
4.0 W @ −2.5 V
5.5 W @ −1.8 V
7.0 W @ −1.5 V
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
• This is a Pb−Free Device
−20 V
−0.20 A
Applications
MARKING
DIAGRAM
3
• High Side Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Equipment
2
1
5 M
SOT−1123
CASE 524AA
MAXIMUM RATINGS (T = 25°C unless otherwise specified)
J
5
= Specific Device Code
(Rotated 90° Clockwise)
= Date Code
Parameter
Drain−to−Source Voltage
Symbol Value Unit
M
V
DSS
−20
8
V
V
Gate−to−Source Voltage
V
GS
Continuous Drain
Current (Note 1)
T = 25°C
−150
−110
−200
−125
P−Channel
MOSFET
A
Steady
State
T = 85°C
A
I
mA
D
D
3
t v 5 s
Steady
State
T = 25°C
A
Power Dissipation
(Note 1)
T = 25°C
A
P
mW
D
G
1
t v 5 s
−200
−600
Pulsed Drain Current
t = 10 ms
p
I
mA
DM
Operating Junction and Storage Temperature
T ,
STG
−55 to
150
°C
J
T
S
2
Source Current (Body Diode) (Note 2)
I
S
−200
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
260
°C
T
L
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†
Device
Package
Shipping
NTNUS3171PZT5G SOT−1123 8000/Tape & Reel
(Pb−Free)
1. Surface−mounted on FR4 board using the minimum recommended pad size,
2
or 2 mm , 1 oz Cu.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
October, 2010 − Rev. 1
NTNUS3171PZ/D
NTNUS3171PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Symbol
Max
1000
600
Unit
R
°C/W
q
JA
R
q
JA
2
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm , 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0 V, I = −250 mA
−20
V
(BR)DSS
GS
D
I
V
V
= 0 V, V = −5.0 V
T = 25°C
J
−50
−100
−200
100
DSS
GS
DS
= 0 V, V = −5.0 V
T = 85°C
J
nA
nA
V
GS
DS
V
= 0 V, V = −16 V
T = 25°C
J
GS
DS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V
= 5.0 V
GSS
DS
GS
V
R
V
= V , I = −250 mA
−0.4
−0.7
2.0
−1.0
3.5
4.0
5.5
7.0
GS(TH)
GS
DS
D
Drain−to−Source On Resistance
V
= −4.5 V, I = −100 mA
DS(ON)
GS D
V
= −2.5 V, I = −50 mA
2.6
GS
GS
GS
GS
DS
D
V
V
= −1.8 V, I = −20 mA
3.4
W
D
= −1.5 V, I = −10 mA
4.0
D
V
= −1.2 V, I = −1.0 mA
6.0
D
Forward Transconductance
g
FS
V
= −5.0 V, I = −125 mA
0.26
S
V
D
Source−Drain Diode Voltage
V
SD
V
= 0 V, I = −200 mA
−0.5
−1.4
GS
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
13
3.4
1.6
ISS
f = 1 MHz, V = 0 V
GS
Output Capacitance
C
OSS
C
RSS
pF
ns
V
= −15 V
DS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
30
56
d(ON)
t
r
V
= −4.5 V, V = −15 V,
DD
GS
D
I
= −200 mA, R = 2.0 W
G
Turn−Off Delay Time
Fall Time
t
196
145
d(OFF)
t
f
4. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2
NTNUS3171PZ
TYPICAL CHARACTERISTICS
0.36
0.32
0.36
4.5 V
T = 25°C
V
≥ 5 V
2.0 V
J
DS
0.32
0.28
0.24
0.20
0.16
0.12
0.08
1.8 V
1.6 V
1.4 V
V
= 2.2 thru 2.5 V
GS
0.28
0.24
0.20
0.16
0.12
0.08
1.2 V
1.0 V
T = 125°C
J
0.04
0
0.04
0
T = 25°C
J
T = −55°C
J
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
9.0
8.0
7.0
6.0
5.0
3.5
3
T = 25°C
J
T = 25°C
J
I
= 200 mA
D
V
= 2.5 V
= 4.5 V
GS
2.5
4.0
3.0
2.0
1.0
V
GS
2
I
D
= 20 mA
2
1.5
0.10
1
3
4
5
0.15
0.20
0.25
0.30
0.35
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.75
1.50
1.25
1.00
10,000
1000
V
GS
= 0 V
I
V
= 200 mA
D
= 4.5 V
GS
T = 150°C
J
100
10
T = 125°C
J
0.75
0.50
−50 −25
0
25
50
75
100
125 150
0
5
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
http://onsemi.com
3
NTNUS3171PZ
TYPICAL CHARACTERISTICS
18
16
14
12
10
1000
T = 25°C
J
V
GS
= 0 V
t
t
d(off)
C
f
iss
100
t
r
t
d(on)
8
6
4
C
oss
10
1
V
= 15 V
= 200 mA
= 4.5 V
DD
I
D
2
0
V
GS
C
rss
0
2
4
6
8
10
12 14 16
18 20
1
10
R , GATE RESISTANCE (W)
100
DRAIN−TO−SOURCE VOLTAGE (V)
G
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
V
= 0 V
0.12
0.10
GS
T = 25°C
J
0.08
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
http://onsemi.com
4
NTNUS3171PZ
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA−01
ISSUE B
NOTES:
−X−
D
b1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
−Y−
1
2
3
E
b
e
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
0.08 (0.0032) X Y
MIN
A
b
0.34
0.15
0.37
0.22
0.15
0.12
0.80
0.60
−−−
1.00
0.10
0.40
0.28
0.20
0.17
0.85
0.65
0.40
1.05
0.15
0.013 0.015 0.016
0.006 0.009 0.011
0.004 0.006 0.008
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.014 −−−− 0.016
0.037 0.039 0.041
0.002 0.004 0.006
A
b1 0.10
c
D
E
e
0.07
0.75
0.55
0.35
0.95
0.05
H
E
L
L
c
H
E
SOLDERING FOOTPRINT*
0.35
0.30
0.25
0.90
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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NTNUS3171PZ/D
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