BD6603KVT-E2 [ROHM]
Disk Drive Motor Controller, 0.5A, PQFP64, ROHS COMPLIANT, TQFP-64;型号: | BD6603KVT-E2 |
厂家: | ROHM |
描述: | Disk Drive Motor Controller, 0.5A, PQFP64, ROHS COMPLIANT, TQFP-64 电动机控制 |
文件: | 总17页 (文件大小:746K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TECHNICAL NOTE
Motor Drivers for MDs
Sensorless
5ch System
Motor Drivers for MDs
BD6603KVT
●Description
1chip system motor driver IC incorporating all kinds of drivers (spindle, sled, focus, tracking, head up/down) required for portable recording
and playback player. Incorporates a charge pump, and low ON resistance power DMOS driving contributes to a reduction in the power
consumption of application sets. The 1chip structure in a small, thin package realizes the small and thin application sets.
●Features
1) Operates at low power supply voltage (2.3V min.)
2) Power DMOS output with low ON resistance (0.8Ω typ.)
3) Incorporates a charge pump circuit for VG boost
4) 3-phase full-wave sensorless driving system for spindle
5) 4ch, 2-value control H-bridges for sled/focus/tracking/head up/down
6) 2ch half-bridges for spindle/sled VM power supply
●Applications
Recording and playback MD
Ver.B Oct.2005
●Absolute maximum ratings(Ta=25°C)
Parameter
Power supply voltage for control circuit
Power supply voltage for driver block
Power supply voltage for pre-driver block
Output current
Symbol
VCC
VM
Limit
7
Unit
V
7
V
VG
15
V
Iomax
Pd
*500
mA
mW
℃
Power dissipation
**1250
-25~+75
-55~+150
+150
Operating temperature range
Storage temperature range
Junction temperature
Topr
Tstg
℃
Tjmax
℃
*Must not exceed Pd or ASO.
**Reduced by 10.0mW/°C over Ta=25°C, when mounted on a glass epoxy board (70mm×70mm×1.6mm).
●Operating conditions
Parameter
Symbol
VCC
VM
Min.
2.3
Typ.
3.0
-
Max.
6.5
Unit
V
Power supply voltage
Pulse input frequency
-
6.5
V
VG
VM+3
-
9
14
V
fin
-
200
kHz
2/16
●Electrical characteristics
(Unless otherwise specified, Ta=25°C, VCC=3V, VM=2.5V, fin=176kHz)
Limit
Typ.
5.6
Parameter
Circuit current
Symbol
Unit
Conditions
Min.
-
Max.
8.0
ICC
IST
mA
µA
at operation in all blocks
at standby in all blocks
upper and lower ON resistance
in total VG=10V
-
16
50
Output ON resistance
~Boost circuit~
Output voltage
RON
-
0.8
1.2
Ω
VG1
VG2
7.5
6.0
8.9
7.3
10.0
9.5
V
V
each input L
at operation in all blocks
~Oscillation circuit~
Self propelled oscillating frequency
External clock synchronous range
fOSC
125
250
400
500
kHz
kHz
fSYNC
-
-
input from EXTCLK pin
~Spindle (3-phase full-wave sensorless driver) block~
Position detection comparator
VCO
-10
-
+10
mV
offset
Detection comparator input range
CST charge current
VCD
ICTO
ICTI
0
-
-2.1
3.6
-8.0
5.5
-
VCC-1.0
-3.3
V
µA
mA
µA
µA
µA
mV
V
-0.9
2.0
-4.0
2.0
-
CST=1V
CST discharge current
CSL charge current
5.3
CST=1V
ICLO
ICLI
-12
CSL=VCC-0.4V
CSL=VCC-0.4V
BRK=VCC
CSL discharge current
Brake comparator input current
Brake comparator input offset
Brake comparator input range
FG output L voltage
5.3
IBR
2.0
VBO
VBD
VOLF
-15
0
-
+15
-
VCC-1.5
0.3
-
0.2
V
Io=500µA
~Sled, focus, tracking, head up/down, PWM power supply (H-bridge, half-bridge driver) block~
Logic H level input voltage
Logic L level input voltage
VINH
VINL
VCC-0.4
-
-
-
0.4
1
V
V
-
-
-
-1
-
IINH1
IINH2
IINL
-
µA
µA
µA
µsec
VIN=3V
Logic H level input current
Logic L level input current
350
-
600
-
1
VIN=3V EXTCLK pin
VIN=0V
TRISE
0.2
Output propagation delay time
Minimum input pulse width
TFALL
tmin
-
0.1
0.7
µsec
nsec
output pulse width 2/3tmin
or more
200
-
-
◎This IC is not designed to be radiation-resistant.
3/16
●Reference data
16
14
12
10
8
20
18
16
14
12
10
8
30
25
75℃
25℃
25℃
75℃
25℃
20
15
10
5
-25℃
75℃
-25℃
6
6
4
-25℃
4
2
2
Operating range (2.3 V to 6.5 V)
Operating range (2.3 V to 6.5 V)
Operating range (2.3 V to 6.5 V)
0
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCC [V]
VCC [V]
VCC [V]
Fig.1 Circuit current
(at standby in all blocks)
Fig.2 Circuit current
(at operation in all blocks)
Fig.3 Boost circuit output voltage
(Each input L)
20
18
16
14
12
10
8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.2
75℃
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
25℃
75℃
25℃
-25℃
75℃
25℃
-25℃
-25℃
6
4
2
Operating range (2.3 V to 6.5 V)
0
0
1
2
3
4
5
6
0
100
200
300
400
500
0
100
200
300
400
500
VCC [V]
Output current : Io [mA]
Output current : Io [mA]
Fig.5 Spindle output ON resistance
Fig.4 Boost circuit output voltage
(at operation in all blocks)
Fig.6 H-bridge output ON resistance
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-25℃
25℃
75℃
25℃
-25℃
75℃
25℃
-25℃
75℃
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
500
0
100
200
300
400
500
Output current : Io [mA]
Output current : Io [mA]
Output current : Io [mA]
Fig.7 Sled output ON resistance
Fig.8 Half-bridge output ON resistance
Fig.9 FG output L voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-25℃
25℃
75℃
0
50
100
150
200
Output current : Io [ A]
μ
Fig.10 FG pull-up resistance
4/16
●Block diagram/Recommended circuit diagram
+
+
+
+
Fig. 11
5/16
●Pin assignment table/Pin arrangement diagram
48
49
33
32
BD6603KVT
17
64
1
16
Fig. 12
NO.
1
Pin name
PWIN2
IN1F
Function
Half-bridge 2 input
NO.
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
Pin name
CSL1
Function
Slope capacitor connection pin 1
FG output
2
H-bridge 1 forward input
FG
3
IN1R
H-bridge 1 reverse input
IN4R
H-bridge 4 reverse input
4
IN2F
H-bridge 2 forward input
IN4F
H-bridge 4 forward input
5
IN2R
H-bridge 2 reverse input
IN3R
H-bridge 3 reverse input
6
H1PG2
H1ROUT
H1VM
H-bridge 1 power block GND 2
H-bridge 1 reverse output
IN3F
H-bridge 3 forward input
7
H4PG1
H4FOUT
H4VM
H4ROUT
H4PG2
H3PG1
H3FOUT
H3VM
H3ROUT
H3PG2
VG
H-bridge 4 power block GND 1
H-bridge 4 forward output
8
H-bridge 1 power block power supply
H-bridge 1 forward output
9
H1FOUT
H1PG1
H2PG2
H2ROUT
H2VM
H-bridge 4 power block power supply
H-bridge 4 reverse output
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
H-bridge 1 power block GND 1
H-bridge 2 power block GND 2
H-bridge 2 reverse output
H-bridge 4 power block GND 2
H-bridge 3 power block GND 1
H-bridge 3 forward output
H-bridge 2 power block power supply
H-bridge 2 forward output
H2FOUT
H2PG1
BRK-
H-bridge 3 power block power supply
H-bridge 3 reverse output
H-bridge 2 power block GND 1
Brake comparator input (-)
H-bridge 3 power block GND 2
CHARGEPUMP output
BRK+
Brake comparator input (+)
SPUIN
SPVIN
SPWIN
SPCOM
SGND
SPIN detection comparator input (phase U)
SPIN detection comparator input (phase V)
SPIN detection comparator input (phase W)
SPIN motor coil neutral point input pin
Small-signal GND (MOS)
C2M
CHARGEPUMP capacitor 2 connection pin -
CHARGEPUMP capacitor 2 connection pin +
CHARGEPUMP capacitor 1 connection pin -
CHARGEPUMP capacitor 1 connection pin +
Synchronous clock input pin
H-bridge mute pin
C2P
C1M
C1P
EXTCLK
STHB
ASGND
SPPG2
SPUOUT
SPVM2
SPVOUT
SPPG1
SPWOUT
SPVM1
CST
Small-signal block GND (Bip.)
Spindle power block GND 2
STALL
VCC1
Standby pin
Spindle motor output (phase U)
Spindle power block power supply 2
Spindle motor output (phase V)
Spindle power block GND 1
Power supply pin for small signal block 1 (MOS)
Power supply pin for small signal block 2 (Bip.)
Half-bridge 2 power block power supply
Half-bridge 2 output
VCC2
PW2VM
PW2OUT
PWPG
PW1OUT
PW1VM
PWIN1
Spindle motor output (phase W)
Spindle power block power supply 1
Startup oscillation capacitor connection pin
Slope capacitor connection pin 2
Half-bridge power block GND
Half-bridge 1 output
Half-bridge 1 power block power supply
Half-bridge 1 input
CSL2
6/16
●Description of each block operation
・STAND-BY (common to all blocks)
Two modes are available: One mode turns off all blocks (STALL). The other turns off 2ch H-bridges for focus and tracking.
・BEMF COMPARATOR (spindle)
A comparator to detect BEMF generated signals in the rotating motor. Negative input pins are connected at a common point, and
positive input pins are connected to each output.
・Logic (spindle)
Compose the logic signal from BEMF comparator output.
・Slope Signal, Phase Control
Shift the phase of output by an electric angle 30°
・PRE-DRIVE (spindle, sled, focus, tracking, head up/down, spindle motor power supply, sled motor power supply)
Drive output power DMOS.
・CHARGE PUMP
Boost power supply circuit for PRE-DRIVE. Output three times VCC voltage (when each input is off).
・TSD (common to all blocks)
Thermal shutdown circuit. It turns off all driver outputs when the chip temperature Tj reaches approx. 175°C (Typ). The circuit returns with
approx. 20°C of hysteresis.
○Truth table
H-bridge block for sled, focus, tracking, head up/down motor
STALL
STHB
INF
L
INR
L
HFOUT
HROUT
L
L
H
H
H
H
X
L
H
H
H
H
L
L
H
L
L
H
L
H
H
X
X
H
L
H
X
L
Z
Z
Z
Z
X
X
Z : High-Impedance , X : Don't care
Half-bridge block for PWM power supply
STALL
STHB
PWIN1,2
PWIN1,2OUT
X
X
X
H
H
L
L
H
X
L
H
Z
Z : High-Impedance , X : Don't care
7/16
●Timing chart
・Detection and switching of rotor position
Sensorless type driver that does not use Hall sensor to detect rotor position for brushless driving. At this stage, rotor position detection is
performed by comparing BEMF voltage generated in a floating coil of motor, where the output is at High impedance (upper and lower Tr
off) and the neutral point potential of coil (zero cross detection).
Coil neutral point
UOUT
VOUT
WOUT
Zero cross point
Comparator
internal output
U
V
W
Fig. 13 Zero cross detection
Zero cross
signal (=FG)
CSL1
Internal reference level
CSL2
VM
10kΩ(Typ.)
H
+
-
Motor current
COM
High
impedance
Zero cross detection comparator
L
RCOM
RF
Coil neutral point
Fig.14 Motor output -zero cross detection comparator
This comparator detection sensitivity is adjustable by changing the offset of the comparator, taking advantage of voltage drop generated by
bias current in the RCOM resistor, which is connected between COM pin and coil neutral point. Offset shifts approx. 0.8mV forward to COM
pin by 10kΩ change. Adjust RCOM at optimum value in order to prevent sensorless loop vibration (beat lock) and wrong detection caused by
switching noise. Switching noise is generated in the coil by a large output current at motor startup or acceleration. An accurate zero cross
detection is necessary for performing signal composition.
For general sensorless motor, RCOM is 20 kΩ to 50kΩ.
There is high frequency noise on the BEMF voltage. In order to avoid wrong detection due to this noise, connect capacitor C1, C2, C3
between UIN, VIN, WIN and COM pins.
Combining a low pass filter with this capacitor and internal resister (10kΩ Typ.) between output and zero cross comparator, eliminates high
frequency noise. Cutoff frequency (fc) of filter is calculated by the following formula (4).
fc=1/(2·π·C·10kΩ)・・・・(4)
The capacity is set so as to be fc=approx. (typically several kHz to 10KHz). However, precautions must be taken to avoid generating
phase deviation between output voltage and comparator detection voltage in case the capacity is set too large, presuming higher effect of
noise elimination.
8/16
●Selecting Application Components
Design method
Design example
1. RCOM
In case of general sensorless motor, the optimum RCOM is 10kΩ to
50kΩ.
Connection between motor coil neutral point and SPCOM pin (21pin)
enables to adjust offset of rotor position detection comparator. Adjust at
optimum value so as not to work against the startup of using motor and
not to cause any failure such as oscillation.
2. BEMF COMPARATOR filter C 1 to 3
The capacity is set to fc=approximately several kHz – 10 kHz.
However, precautions must be taken to avoid generating
phase deviation between output voltage and comparator detection
voltage in case the capacity is set too large, presuming higher effect
of noise elimination.
Connect capacitor for noise elimination of output BEMF voltage
between SPCOM pins (21pin). Setting too large capacitance may cause
phase deviation and inaccurate rotor position detection.
3. CSL1,2
In case of general sensorless motor with 12 poles, the appropriate
setting value of CSL is 0.01µF to 0.033µF when the maximum
rotation is approximately doubled (1000 rpm).
Phase shift level may be varied from rotor position detection
comparator output to output voltage, depending on the capacitance to
be connected. Make sure that the same, and optimum capacitance is
connected to CSL1, 2 so as not to distort the output voltage waveform
by the rotation speed to be used.
4. CST
In case of general sensorless motor, approx. 0.22µF to 0.47µF
achieves maximum startup. A larger setting is recommended in case
of small motors with low level BEMF voltage generation.
The oscillating frequency at startup is changed depending on the
capacitor value to be connected. Select the optimum value that
produces the shortest startup time for the motor being used.
5. Charge pump
The optimum capacitance is 0.1µF.
The VG voltage is boosted to three times VCC voltage. Therefore, set the
VCC voltage within a range where the VG does not exceed the rating. If
the VG is directly inputted from the outside without using an internal
charge pump, disconnect the capacity between C1P and C1M, C2P and
C2M.
6. Inductance and capacitance for PWM signal filter.
The PWM signal from the microcomputer is filtered and input to the
spindle and sled VM. Set so that the level of ripples after smoothing will
be under 50mVp-p according to the PWM frequency.
If the PWM frequency is approx. 88kHz to 176kHz, an inductance of
5. 6µH to 47µH and a capacitance of 10µF to 100µF are suitable.
7. R1, R2
In case that the connected power supply is approximately 5V, set the
Set the reference voltage that switches BRAKE COMPARATOR with the
ratio of R1, R2. Set within the input range of the brake comparator (Refer
to P.3/16).
ratio within the range of 10 kΩ to 100kΩ.
※The setting values of the data above are reference values. Board layout, wiring, and types of components to be used may cause
characteristic variations in actual setting. Verify the setting in the actual application.
●Attention of board layout
1. VCC and VG pins (49, 57, 58PIN)
Internal circuits, other than output transistors, operate under VCC and VG power supply lines directly. Provide appropriate pattern layout so
as not to affect one another, or noise mixing from outside that may cause malfunction.
2. GND pins (22, 23PIN)
Connect to GND with thickest possible wire.
3. Power output pins (7, 10, 12, 15, 39, 41, 43, 55, 57, 60, 62PIN)
Power loss occurs due to the addition of wiring resistance to the motor's impedance. Use thickest possible wires and position IC
close to the motor with shorter wire.
4. Power GND pins (Pins 8, 13, 16, 38, 42, 54, 58, 59, 63PIN)
Layout with thickest possible wires, to prevent wiring resistance.
5. BEMF comparator input pins (18, 19, 20, 21PIN)
Note, noise on the BEMF voltage inputting into this comparator.
9/16
6. CSL1, 2 pins (2, 25PIN)
Place two capacitors close to pins with the same length wires in order to have the same charge/discharge characteristics.
●Power dissipation
1) Heat generation mechanism
SPVM1, 2
VM
Upper loss voltage (RONH × Io)
Io
Output waveform
Output
Output
Lower loss voltage (RONL × Io)
Upper and lower
resistance in total
RF
Fig. 16 Output waveform
RON=RONH+RONL
Fig. 15 Motor output circuit diagram
The IC's power consumption P is expressed by formula (1).
P=VCC×ICC+Io×(RONH+RONL)・・・・(1)
Consider formula (1) as well as the package power (Pd) and ambient temperature (Ta) at operation and confirm that the IC's chip
temperature Tj does not exceed 150°C.
The chip will cease to function as a semiconductor when Tj exceeds 150°C, and problems such as parasitic behavior and leaks will occur.
Ongoing use of the chip under these conditions will result in IC degradation and failure. Observe Tjmax≦150°C strictly under any
conditions.
2) Measuring the chip temperature
The chip temperature can be estimated by making the measurements described below.
When brake function is not used, the chip temperature can be
measured taking advantage of the temperature characteristics
BRK-
of internal diode.
GND
When calculating the chip temperature X under a certain
conditions:
Internal equivalent circuit diagram
Potential at Tj=25°C a [mV]
Potential at Tj=X°C
b [mV]
Assuming that the temperature characteristic of the diode is
-2 [mV/°C], the formula is:
BRK-
100µA
V
b-a [mV]
+25=X(℃)
2 [mV/℃]
Draw a constant current
of 100 µA.
Fig.17
If an accurate chip temperature is required, the temperature characteristics of all the IC's internal diodes must be taken into account.
10/16
●I/O equivalent circuit diagrams
○I/O circuit diagram
(1) Logic input (2,3,4,5,35, 36,37,38,55)
(2) Comparator for spindle BEMF voltage detection
(18,19,20,21,25,27,29)
VCC1
VCC1
PWIN1 (64)
PWIN2 (1)
IN1F (2)
IN1R (3)
IN2F (4)
IN2R (5)
IN3F (38)
IN3R (37)
IN4F (36)
IN4R (35)
STHB (55)
SPUIN (18)
SPVIN (19)
SPWIN (20)
SPCOM
(21)
SPUOUT (25)
10k
SPVOUT (27)
SPWOUT (29)
10
5k
5k
ASGND
SGND
SGND
Fig. 18
Fig. 19
(3) Brake comparator (7,6)
VCC1
1k
1k
BRK+ (17)
BRK- (16)
5k
5k
ASGND
SGND
Fig. 20
(4) CST, Standby (33,56)
VCC1
VCC2
300k
30k
CST (33)
Self-propelled oscillating circuit
10k
STALL
(56)
30k
ASGND
SGND
Fig. 21
11/16
(5) Charge pump external clock input (54)
VCC1
(6) FG output (34)
VCC1
VCC2
20k
FG (34)
EXTCLK (54)
10k
ASGND
SGND
SGND
Fig. 22
Fig. 23
(7) Charge pump (49,50,51,52,53)
VCC1
C1P (53)
C2P (51)
C2M (50)
C1M (52)
SGND
Fig. 24
VG (49)
(8) H-bridge 1 output (6,7,8,9,10)
VG
(9) H-bridge 2 output (11,12,13,14,15)
VG
H1VM
(8)
H2VM
(13)
H1FOUT
(9)
H1ROUT
(7)
H2FOUT
(14)
H2ROUT
(12)
H1PG1
(10)
H1PG2
(6)
H2PG1
(15)
H2PG2
(11)
Fig. 26
Fig. 25
12/16
(10) H-bridge 3 output (44,45,46,47,48)
(11) H-bridge 4 output (39,40,41,4243)
VG
VG
H4VM
H3VM
(46)
(41)
H4ROUT
(42)
H4FOUT
(40)
H3ROUT
(47)
H3FOUT
(45)
H3PG1
(44)
H3PG2
(48)
H4PG1
(39)
H4PG2
(43)
Fig. 27
Fig. 28
(12) Half-bridge 1, 2 output (59,60,61,62,63)
VG
PW2VM
(59)
PW1VM
(63)
PW1OUT
PW2OUT
(60)
(62)
PWPG
(61)
Fig. 29
(13) Spindle output (24,25,26,27,28,29,30)
VG
SPVM2
SPVM1
(26)
(30)
SPUOUT
(25)
SPVOUT
SPWOUT
(27)
(29)
SPPG2
(24)
SPPG1
(28)
Fig. 30
13/16
●Notes on the use
1) Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down
the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will
expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2) Reverse polarity connection of the power supply
Connecting the of power supply in reverse polarity can damage IC. Take precautions when connecting the power supply lines. An external
direction diode can be added.
3) Power supply lines
Design PCB layout pattern to provide low impedance GND and supply lines. To obtain a low noise ground and supply line,
separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply terminals to ICs,
connect a capacitor between the power supply and the GND terminal. When applying electrolytic capacitors in the circuit, note
that capacitance characteristic values are reduced at low temperatures.
4) GND voltage
Ground-GND potential should maintain at the minimum ground voltage level. Furthermore, no terminals should be lower than the GND potential
voltage including an electric transients.
5) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
6) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if
positive and ground power supply terminals are reversed. The IC may also be damaged if pins are shorted together or are shorted to
other circuit’s power lines.
7) Operation in a strong magnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
8) ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
9) Thermal shutdown circuit (TSD)
When the chip temperature (Tj) becomes 175°C (Typ.), thermal shutdown circuit (TSD circuit) operates and makes the coil output to
motor open. There is a temperature hysteresis of approx. 20°C (Typ.). The thermal shutdown circuit (TSD circuit) is designed only to
shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to
use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed.
10) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always
discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to, or removing it from a jig
or fixture, during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when
transporting and storing the IC.
14/16
11) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements to keep them isolated. P–N junctions are
formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the
relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P–N junction operates as a parasitic diode.
When GND > Pin B, the P–N junction operates as a parasitic diode and transistor.
Parasitic elements can occur inevitably in the structure of the IC. The operation of parasitic elements can result in mutual interference
among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a
voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Pin A
Pin B
B
Pin B
B
C
N
E
Pin A
C
E
N
N
N
P+
P+
P+
P+
P
P
N
N
N
Parasitic elements
P substrate
P substrate
GND
Parasitic elements
Other adjacent
GND
GND
GND
Parasitic elements
Parasitic elements
Fig.31 Example of a simple IC structure
12) Ground wiring patterns
The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage on the
power ground line may damage the device.
●Power dissipation characteristic
Pd[ mW ]
1500
1250
1000
500
0
25
50
75
100
125
150
Ta[ ℃ ]
*Reduced by 10.0mW/°C over Ta=25°C, when mounted on a glass epoxy board (70mm×70mm×1.6mm).
Fig. 32
15/16
●Selecting a Model Name When Ordering
・Specify a model name when ordering. Check the validity when combining parameter. Enter information from the left.
―
B
D
6
6
0
3
K
V
T
E
2
E1 Reel-wound embossed tape, 1pin at front
E2 Reel-wound embossed tape, 1pin at back
Product name
Package type
・BD6603KVT
・KVT :TQFP64V
TQFP64V
<Dimension>
<Packing information>
Container
Quantity
Tray(with dry pack)
1000pcs
Direction of product is fixed in a tray.
12.0 0.3
10.0 0.2
Direction
of feed
48
33
49
64
32
17
1
16
0.125 0.1
0.5
0.2 0.1
0.1
(Unit:mm)
※Orders are available in complete units only.
The contents described herein are correct as of October, 2005
The contents described herein are subject to change without notice. For updates of the latest information, please contact and confirm with ROHM CO.,LTD.
Any part of this application note must not be duplicated or copied without our permission.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding
upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams and information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any
warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such
infringement, or arising from or connected with or related to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, implied right or license to practice or commercially exploit any intellectual property rights or other
proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer.
The products described herein utilize silicon as the main material.
The products described herein are not designed to be X ray proof.
Published by
Application Engineering Group
Catalog NO.05T427Be '05.10 ROHM C 1000 TSU
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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