BD8314NUV_11 [ROHM]

High-efficiency Step-up Switching Regulator with Built-in Power MOSFET; 高效率升压型开关稳压器具有内置功率MOSFET
BD8314NUV_11
型号: BD8314NUV_11
厂家: ROHM    ROHM
描述:

High-efficiency Step-up Switching Regulator with Built-in Power MOSFET
高效率升压型开关稳压器具有内置功率MOSFET

稳压器 开关
文件: 总16页 (文件大小:401K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Single-chip Type with Built-in FET Switching Regulators  
High-efficiency Step-up  
Switching Regulator  
with Built-in Power MOSFET  
BD8314NUV  
No.11027EDT09  
Description  
ROHM’s High-efficiency Step-up Switching Regulator Built-in Power MOSFET BD8314NUV generates step-up output  
including 8 V or 10 V from 4 batteries, batteries such as Li1cell or Li2cell etc. or a 5 V fixed power supply line.  
This IC allows easy production of small and a wide range of output current, and is equipped with an external coil/capacitor  
downsized by high frequency operation of 1.2 MHz, built-in 2.5 A rated 80 mNch FET SW, and flexible phase  
compensation system on board.  
Features  
1) Incorporates Nch FET capable of withstanding 2.5 A/14 V.  
2) Incorporates phase compensation device between input and output of ERROR AMP.  
3) Small coils and capacitors to be used by high frequency operation of 1.2 MHz  
4) Input voltage 3.0 V ~ 12 V  
5) Output current  
600 mA (3.5 V ~ 10 V) at 10 V  
600 mA (3.0 V ~ 8 V) at 8 V  
6) Incorporates soft-start function.  
7) Incorporates timer latch system short protecting function.  
8) As small as 3 mm×3 mm, SON 10-pin package VSON010V3030  
Application  
General portable equipment like DSC/DVC powered by 4 dry batteries or Li2cell  
Absolute Maximum Ratings  
Parameter  
Symbol  
VCC, LX  
SWOUT, INV  
Iinmax  
Pd  
Ratings  
14  
Unit  
V
Maximum applied power voltage  
Maximum input voltage  
Maximum input current  
Power dissipation  
14  
V
2.5  
A
700*  
mW  
°C  
°C  
°C  
Operating temperature range  
Storage temperature range  
Junction temperature  
Topr  
-25 to +85  
-55 to +150  
+150  
Tstg  
Tjmax  
*
When used at Ta = 25°C or more installed on a 74.2 × 74.2 × 1.6t mm board, the rating is reduced by 5.6 mW/°C.  
Operating Conditions (Ta = 25°C)  
Parameter  
Symbol  
VCC  
Ratings  
3.0 to 12  
4.0 to 12  
Unit  
V
Power supply voltage  
Output voltage  
VOUT  
V
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
1/15  
Technical Note  
BD8314NUV  
Electrical Characteristics  
(Unless otherwise specified, Ta = 25 °C, VCC = 7.4 V)  
Limits  
Typ.  
Parameter  
Symbol  
Unit  
Conditions  
Min.  
Max.  
[Low voltage input malfunction preventing circuit]  
Detection threshold voltage  
Hysteresis range  
[Oscillator]  
VUV  
-
2.4  
2.6  
V
VREG monitor  
ΔVUVhy  
50  
100  
200  
mV  
Oscillation frequency  
[Regulator]  
fosc  
1.1  
1.2  
5.0  
1.3  
MHz  
V
Output voltage  
[ERROR AMP]  
INV threshold voltage  
Input bias current  
Soft-start time  
VREG  
4.65  
5.35  
VINV  
IINV  
Tss  
0.99  
-50  
1.00  
0
1.01  
50  
V
nA  
Vcc=11.0V , VINV=5.5V  
5.3  
8.8  
12.2  
msec  
[PWM comparator]  
LX Max Duty  
Dmax1  
77  
-
85  
50  
93  
%
[SWOUT]  
ON resistance  
[Output]  
RONSWOUT  
100  
LX NMOS ON resistance  
LX leak current  
[STB]  
RON  
-
80  
0
150  
1
mΩ  
Ileak  
-1  
µA  
Operation  
No-operation  
VSTBH  
VSTBL  
RSTB  
2.5  
-0.3  
250  
-
-
VCC  
0.3  
V
V
STB pin  
control voltage  
STB pin pull-down resistance  
[Circuit current]  
400  
700  
kΩ  
Standby current VCC  
ISTB  
Icc  
-
-
-
1
µA  
µA  
Circuit current at operation VCC  
600  
900  
VINV=1.2V  
Not designed to be resistant to radiation  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
2/15  
Technical Note  
BD8314NUV  
Description of Pins  
Pin No. Pin Name  
Function  
Ground terminal  
1
2
GND  
VCC  
SWOUT  
INV  
GND  
VCC  
Control part power input terminal  
5 V output terminal of regulator  
for internal circuit  
3
VREG  
Lx  
VREG  
LX  
STB  
45  
67  
8
Coil connecting terminal  
Power transistor ground terminal  
ON/OFF terminal  
PGND  
PGND  
PGND  
STB  
LX  
9
INV  
ERROR AMP input terminal  
STBSW for split resistance  
Fig.1 Pin layout  
10  
SWOUT  
Block Diagram  
VREG  
STB  
VCC  
UVLO  
Reference  
5V REG  
STBY_IO  
VREG  
VREF  
FB H  
OSC  
1.2MHz  
Lx  
SCP  
GND  
OSC×16000 count  
VREG  
STOP  
PRE  
DRIVER  
PWM  
CONTROL  
80mΩ  
PGND  
ERROR_AMP  
VREF  
Soft  
Start  
SWOUT  
STB  
50Ω  
INV  
Fig.2 Block diagram  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
3/15  
Technical Note  
BD8314NUV  
Description of Blocks  
1. VREF  
This block generates ERROR AMP reference voltage.  
The reference voltage is 1.0 V.  
2. UVLO  
Circuit for preventing low voltage malfunction  
Prevents malfunction of the internal circuit at activation of the power supply voltage or at low power supply voltage.  
Monitors VREG pin voltage to turn off all output FET and DC/DC converter output when VREG voltage is lower than  
2.4 V, and reset the timer latch of the internal SCP circuit and soft-start circuit. This threshold contains 100 mV  
hysteresis.  
3. SCP  
Timer latch system short-circuit protection circuit  
When the INV pin is the set 1.0 V or lower voltage, the internal SCP circuit starts counting. The internal counter is in  
synch with OSC; the latch circuit activates after a lapse of 13.3 msec after the counter counts about 16000 oscillations  
and then, turn off DC/DC converter output. To reset the latch circuit, turn off the STB pin once. Then, turn it on again or  
turn on the power supply voltage again.  
4. OSC  
Circuit for oscillating saw tooth waves with an operation frequency fixed at 1.2 MHz  
5. ERROR AMP  
Error amplifier for detecting output signals and outputting PWM control signals  
The internal reference voltage is set at 1.0 V.  
A primary phase compensation device of 200 pF, 62 kis built in between the inverting input terminal and the output  
terminal of this ERROR AMP.  
6. PWM COMP  
Voltage-pulse width converter for controlling output voltage corresponding to input voltage  
Comparing the internal SLOPE waveform with the ERROR AMP output voltage, PWM COMP controls the pulse width  
to the output to the driver.  
Max Duty is set at 85%.  
7. SOFT START  
Circuit for preventing in-rush current at startup by bringing the output voltage of the DC/DC converter into a soft-start  
Soft-start time is in synch with the internal OSC, and the output voltage of the DC/DC converter reaches the set voltage  
after about 10000 oscillations.  
8. PRE DRIVER  
CMOS inverter circuit for driving the built-in Nch FET.  
9. STBY_IO  
Voltage applied on STB pin (8 pin) to control ON/OFF of IC  
Turned ON when a voltage of 2.5 V or higher is applied and turned OFF when the terminal is open or 0 V is applied.  
Incorporates approximately 400 kpull-down resistance.  
10. Nch FET SW  
Built-in SW for switching the coil current of the DC/DC converter. Incorporates an 80 mNchFET SW capable of  
withstanding 14 V. Since the current rating of this FET is 2.5 A, it should be used within 2.5 A including the DC current  
and ripple current of the coil.  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
4/15  
Technical Note  
BD8314NUV  
Reference Data (Unless otherwise specified, Ta = 25°C, VCC = 7.4 V)  
1.02  
1.01  
1.00  
0.99  
0.98  
1.02  
1.01  
1.00  
0.99  
0.98  
5.3  
5.2  
5.1  
5.0  
4.9  
4.8  
4.7  
0
5
10  
-40 -20  
0
20 40 60 80 100 120  
-40  
0
40  
80  
120  
VCC [V]  
TEMPERATURE [  
]
TEMPERATURE [  
]
Fig.4. INV threshold  
power supply property  
Fig.5. VREG output  
temperature property  
Fig.3. INV threshold  
temperature property  
1.4  
1.3  
1.2  
1.1  
1.0  
8
7
6
5
4
3
2
1
0
1.4  
1.3  
1.2  
1.1  
1.0  
0
2
4
6
8
10  
12  
14  
-40  
0
40  
80  
120  
3
6
9
12  
15  
VCC [V]  
TEMPERATURE [  
]
VCC [V]  
Fig.7. fosc  
temperature property  
Fig.6. VREG output  
power supply property  
Fig.8. fosc  
voltage property  
160  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
3.5  
3.4  
3.3  
3.2  
3.1  
3.0  
2.9  
2.8  
2.7  
2.6  
2.5  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
ID=500mA  
UVLO release  
ID=500mA  
Hysteresis width  
UVLO detection  
60  
40  
20  
0
-40  
0
40  
80  
120  
3
6
9
12  
15  
-40 -20  
0
25 50 85 100 120  
VCC [V]  
TEMPARATURE [  
]
TEMPARATURE [  
]
Fig.10. Nch FET ON  
resistance temperature property  
Fig.11. Nch FET ON  
resistance power supply property  
Fig.9. UVLO threshold  
temperature property  
100  
2.5  
2.0  
1.5  
1.0  
100  
ID=1mA  
ID=1mA  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
ON  
OFF  
-50  
0
50  
VCC [V]  
100  
150  
-40  
0 40  
TEMPARATURE [  
80  
]
120  
3
6
9
12  
15  
VCC [V]  
Fig.12. STB threshold  
temperature property  
Fig.13. SWOUT ON resistance  
temperature property  
Fig.14. SWOUT ON resistance  
power supply property  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
5/15  
Technical Note  
BD8314NUV  
95  
90  
85  
80  
75  
95  
90  
85  
80  
75  
2.5  
2.0  
1.5  
1.0  
3
6
9
12  
15  
-50  
0
50  
100  
150  
-40  
0
40  
80  
120  
VCC [V]  
VCC [V]  
TEMPARATURE [  
]
Fig.16. Lx Max duty  
power supply property  
Fig.15. Lx Max duty  
temperature property  
Fig.17. Circuit current  
temperature property  
1000  
800  
600  
400  
200  
0
0
2
4
6
8
10  
12  
14  
VCC [V]  
Fig.18. Circuit current  
power supply property  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
6/15  
Technical Note  
BD8314NUV  
Example of Application Input: 3.0 to 10 V, output: 10 V / 500 mA  
RSX201L-30 (ROHM)  
10V/500mA  
22μF  
GRM32EB31C226KE16 (Murata)  
4.7μH  
DE3518E(TOKO)  
PGND  
6
Lx  
Lx  
5
VBAT=2.54.5V  
PGND  
STB  
10p  
4
3
2
7
8
9
10μF  
GRM31CB31E106KA75L(Murata)  
1μF  
GRM188B11A105KA61(Murata)  
VREG  
VCC  
ON/OFF  
200k  
10k  
INV  
100k  
1μF  
GRM21BB11C105KA01(Murata)  
22k  
3.35.0V  
SWOUT  
GND  
1
10  
Fig.19 Reference application diagram  
Reference Application Data 1  
100  
100  
100  
VCC=10V  
VCC=4.0V  
80  
60  
40  
20  
0
VCC=6.0V  
80  
80  
60  
60  
VCC=7.4V  
VCC=3.5V  
VCC=8.4V  
VCC=4.8V  
40  
40  
20  
0
20  
0
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
OUTPUT CURRENT [mA]  
OUTPUT CURRENT [mA]  
OUTPUT CURRENT [mA]  
Fig.20 Power conversion efficiency 1  
Fig.21 Power conversion efficiency 2  
Fig.22 Power conversion efficiency 3  
10.5  
10.4  
10.5  
10.4  
10.3  
15  
14  
13  
10.3  
VCC=10V  
10.2  
10.2  
10.1  
10.0  
9.9  
12  
Io=100mA  
VCC=4.8V  
VCC=8.4V  
10.1  
10.0  
11  
10  
9
9.9  
VCC=4.0V  
VCC=3.5V  
VCC=7.4V  
9.8  
9.8  
8
Io=500mA  
VCC=6.0V  
9.7  
9.7  
7
6
5
9.6  
9.5  
9.6  
9.5  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
0
2
4
6
8
10  
12  
OUTPUT CURRENT [mA]  
OUTPUT CURRENT [mA]  
INPUT VOLTAGE [V]  
Fig.23 Line regulation  
Fig.25 Load regulation 2  
Fig.24 Load regulation 1  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
7/15  
Technical Note  
BD8314NUV  
Reference Application Data 2 (VCC = 3.0 V, 6.0 V, 8.4 V, VOUT = 10 V)  
60  
40  
180  
120  
60  
60  
40  
180  
60  
40  
180  
120  
60  
Phase  
Phase  
120  
Phase  
20  
20  
60  
0
20  
0
0
0
0
0
Gain  
Gain  
Gain  
-20  
-40  
-60  
-60  
-120  
-180  
-20  
-40  
-60  
-60  
-20  
-40  
-60  
-60  
-120  
-180  
-120  
-180  
100  
1k  
10k  
100k  
1M  
ꢀꢀ  
100  
ꢀꢀ  
1
1k  
10k  
100k  
1M  
100  
100  
1000  
1k  
10000  
10k  
100000 1000000  
100k 1M  
ꢀꢀ  
Frequency [Hz]  
Frequency [Hz]  
Frequency [Hz]  
Fig.26 Frequency response property 1  
(VCC = 3.0 V, Io = 200 mA)  
Fig.27 Frequency response property 2  
(VCC = 6.0 V, Io = 200 mA)  
Fig.28 Frequency response property 3  
(VCC = 8.4 V, Io = 200 mA)  
60  
40  
180  
120  
60  
60  
40  
180  
60  
40  
180  
120  
60  
Phase  
120  
60  
Phase  
Phase  
20  
20  
20  
0
0
0
0
0
0
Gain  
Gain  
Gain  
-20  
-40  
-60  
-60  
-120  
-180  
-20  
-40  
-60  
-60  
-120  
-180  
-20  
-40  
-60  
-60  
-120  
-180  
1
100  
1k  
10k  
100k 1M  
1
100  
1k  
10k  
100k 1M  
1
100  
1k  
10k  
100k 1M  
ꢀꢀ  
ꢀꢀ  
ꢀꢀ  
Frequency [Hz]  
Frequency [Hz]  
Frequency [Hz]  
Fig.30 Frequency response property 5  
(VCC = 6.0 V, Io = 500 mA)  
Fig.31 Frequency response property 6  
(VCC = 8.4 V, Io = 500 mA)  
Fig.29 Frequency response property 4  
(VCC = 3.0 V, Io = 500 mA)  
Reference Board Pattern  
VOUT  
Lx  
GND  
VBAT  
The radiation plate on the rear should be a GND flat surface of low impedance in common with the PGND flat surface.  
It is recommended to install a GND pin in another system as shown in the drawing without connecting it directly to  
this PGND  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
8/15  
Technical Note  
BD8314NUV  
Limits of the lowest power supply voltage to start up  
When using configuration of inputting VCC voltage from output voltage of DC/DC converter, the input voltage as power  
supply for the IC drops by Vf voltage of external Diode.  
The worst condition is shown as below.  
VCC terminal voltage - Vf voltage of external diode the worst voltage of UVLO reset voltage(=2.8V)  
Please judge this IC is useable or not considering needed start up voltage and load current.  
3.2  
VOUT=10V, typ  
3.0  
-35℃  
2.8  
2.6  
25℃  
2.4  
85℃  
2.2  
0.1  
1.0  
10.0  
100.0  
Io [mA]  
Fig.32 start up voltage Vs load current  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
9/15  
Technical Note  
BD8314NUV  
Selection of Part for Applications  
(1) Inductor  
A shielded inductor that satisfies the current rating  
(current value, Ipecac as shown in the drawing below)  
and has a low DCR (direct resistance component) is  
recommended.  
Inductor values affect inductor ripple current, which will  
cause output ripple.  
ΔIL  
Ripple current can be reduced as the coil L value  
becomes larger and the  
switching frequency becomes higher.  
Fig.33 Inductor current  
Ipeak IOUT   
VOUT / VIN  
/ηΔIL / 2 [A] ・・・(1)  
1
ΔIL VIN VOUT VIN [A]  
・・・(2)  
L
VOUT  
f
(η: Efficiency, IL: Output ripple current, f: Switching frequency)  
As a guide, inductor ripple current should be set at about 20 to 50% of the maximum input current.  
* Current over the coil rating flowing in the coil brings the coil into magnetic saturation, which may lead to lower  
efficiency or output oscillation. Select an inductor with an adequate margin so that the peak current does not  
exceed the rated current of the coil.  
(2) Output capacitor  
A ceramic capacitor with low ESR is recommended for output in order to reduce output ripple.  
There must be an adequate margin between the maximum rating and output voltage of the capacitor, taking the DC  
bias property into consideration.  
Output ripple voltage is obtained by the following equation.  
VOUT VIN  
f CO VOUT  
VPP IOUT   
IOUT RESR [V]  
・・・(3)  
Setting must be performed so that output ripple is within the allowable ripple voltage.  
(3) Output voltage setting  
The internal reference voltage of the ERROR AMP is 1.0 V. Output voltage is obtained by Equation (4) of Fig. 33,  
but it should be designed taking about 50 , an error of NMOS ON resistance of SWOUT into consideration.  
VOUT  
R1R2  
R2  
1.0 [V]  
ERROR AMP  
R1  
R2  
VO   
・・・(4)  
INV  
VREF  
1.0V  
SWOUT  
STB  
Fig.34 Setting of voltage feedback resistance  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
10/15  
Technical Note  
BD8314NUV  
(4) DC/DC converter frequency response adjustment system  
Condition for stable application  
The condition for feedback system stability under negative feedback is that the phase delay is 135 °or less when  
gain is 1 (0 dB).  
Since DC/DC converter application is sampled according to the switching frequency, the bandwidth GBW of the  
whole system (frequency at which gain is 0 dB) must be controlled to be equal to or lower than 1/10 of the switching  
frequency.  
In summary, the conditions necessary for the DC/DC converter are:  
-
-
Phase delay must be 135°or lower when gain is 1 (0 dB).  
Bandwidth GBW (frequency when gain is 0 dB) must be equal to or lower than 1/10 of the switching frequency.  
To satisfy above two items, R1, R2, R3, DS and RS in Fig. 34 should be set as follows.  
VOUT  
R1  
[1] R1, R2, R3  
BD8314NUV incorporates phase compensation devices of  
R4=62 kand C2=200pF. These C2 and R1, R2, and R3  
values decide the prim ary pole that determines the  
bandwidth of DC/DC converter.  
Inside of IC  
R4  
Cs  
Rs  
C2  
FB  
Primary pole point frequency  
R3  
R2  
1
fp=  
・・・・(1)  
R1R2  
2π A×(  
+R3)×C2  
R1+R2  
Fig.35 Example of phase compensation setting  
DC/DC converter DC Gain  
A
: ERROR AMP Gain  
About 100dB = 105  
: Oscillator amplification = 0.5  
: Input voltage  
1
VOUT  
DC Gain A   
・・・・(2)  
B
VOUT VIN  
B
VIN  
VOUT : Output voltage  
By Equations (1) and (2), the frequency fsw of point 0 dB under limitation of the bandwidth of the DC gain at the  
primary pole point is as shown below.  
1
1
VOUT  
fSW fpDC Gain   
・・・・(3)  
R1R2  
R1R2  
R3  
B
VOUT VIN  
2πC2  
It is recommended that fsw should be approx.10 kHz. When load response is difficult, it may be set at approx. 20  
kHz. By this setting, R1 and R2, which determine the voltage value, will be in the order of several hundred k.  
Therefore, if an appropriate resistance value is not available and routing may cause noise, the use of R3 enables  
easy setting.  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
11/15  
Technical Note  
BD8314NUV  
[2]Cs and Rs setting  
In the step-up DC/DC converter, the secondary pole point is caused by the coil and capacitor as expressed by the  
following equation.  
1D  
fLC   
・・・・(4)  
2π  
LC  
D: ON Duty = ( VOUT - VIN ) / VOUT  
This secondary pole causes a phase rotation of 180°. To secure the stability of the system, put zero points in 2  
places to perform compensation.  
1
Zero point by built-in CR fz1   
13 kHz  
・・・・(5)  
・・・・(6)  
2πR4C2  
1
Zero point by Cs  
fz1   
2π  
R1R3 CS  
Setting CS2 to be half to 2 times a frequency as large as fLC provides an appropriate phase margin.  
It is desirable to set Rs at about 1/20 of (R1+R3) to cancel any phase boosting at high frequencies.  
Those pole points are summarized in the figure below. The actual frequency property is different from the ideal  
calculation because of part constants. If possible, check the phase margin with a frequency analyzer or network  
analyzer, etc.. Otherwise, check for the presence or absence of ringing by load response waveform and also  
check for the presence or absence of oscillation under a load of an adequate margin.  
(5) (6)  
(3)  
(4)  
Fig. 36 Example of DC/DC converter frequency property  
(Measured with FRA5097 by NF Corporation)  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
12/15  
Technical Note  
BD8314NUV  
I/O Equivalence Circuit  
FB  
INV  
VCC  
VREG  
VREG  
VREG  
FB  
INV  
VREG  
SWOUT  
VCC  
VCC  
VCC  
VREG  
SWOUT  
STB  
Lx, PGND  
VCC  
VCC  
Lx  
STB  
PGND  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
13/15  
Technical Note  
BD8314NUV  
Notes for Use  
1) Absolute Maximum Rating  
We dedicate much attention to the quality control of these products, however the possibility of deterioration or destruction  
exists if the impressed voltage, operating temperature range, etc., exceed the absolute maximum ratings. In addition, it is  
impossible to predict all destructive situations such as short-circuit modes, open circuit modes, etc. If a special mode  
exceeding the absolute maximum rating is expected, please review matters and provide physical safety means such as  
fuses, etc.  
2) GND Potential  
Keep the potential of the GND pin below the minimum potential at all times.  
3) Thermal Design  
Work out the thermal design with sufficient margin taking power dissipation (Pd) in the actual operation condition into  
account.  
4) Short Circuit between Pins and Incorrect Mounting  
Attention to IC direction or displacement is required when installing the IC on a PCB. If the IC is installed in the wrong  
way, it may break. Also, the threat of destruction from short-circuits exists if foreign matter invades between outputs or the  
output and GND of the power supply.  
5) Operation under Strong Electromagnetic Field  
Be careful of possible malfunctions under strong electromagnetic fields.  
6) Common Impedance  
When providing a power supply and GND wirings, show sufficient consideration for lowering common impedance and  
reducing ripple (i.e., using thick short wiring, cutting ripple down by LC, etc.) as much as you can.  
7) Thermal Protection Circuit (TSD Circuit)  
This IC contains a thermal protection circuit (TSD circuit). The TSD circuit serves to shut off the IC from thermal  
runaway and does not aim to protect or assure operation of the IC itself. Therefore, do not use the TSD circuit for  
continuous use or operation after the circuit has tripped.  
8) Rush Current at the Time of Power Activation  
Be careful of the power supply coupling capacity and the width of the power supply and GND pattern wiring and routing  
since rush current flows instantaneously at the time of power activation in the case of CMOS IC or ICs with multiple  
power supplies.  
9) IC Terminal Input  
This is a monolithic IC and has P+ isolation and a P substrate for element isolation between each element. P-N junctions  
are formed and various parasitic elements are configured using these P layers and N layers of the individual elements.  
For example, if a resistor and transistor are connected to a terminal as shown on Fig.37:  
The P-N junction operates as a parasitic diode  
when GND > (Terminal A) in the case of a resistor or when GND > (Pin B) in the case of a transistor (NPN)  
Also, a parasitic NPN transistor operates using the N layer of another element adjacent to the previous diode in the  
case of a transistor (NPN) when GND > (Pin B).  
The parasitic element consequently rises under the potential relationship because of the IC’s structure. The parasitic  
element pulls interference that could cause malfunctions or destruction out of the circuit. Therefore, use caution to avoid  
the operation of parasitic elements caused by applying voltage to an input terminal lower than the GND (P board), etc.  
Transistor (NPN)  
B
Resistor  
(Pin B)  
(Pin A)  
E
C
GND  
N
(Pin A)  
P+  
P
P+  
P+  
P+  
P
N
N
N
N
N
N
Parasitic Element  
P Substrate  
GND  
P Substrate  
GND  
GND  
Parasitic Element  
Parasitic  
Element  
Fig.37 Example of simple structure of Bipolar IC  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
14/15  
Technical Note  
BD8314NUV  
Ordering part number  
B D  
8
3
1
4
N U V  
-
E
2
Part No.  
Part No.  
Package  
NUV: VSON010V3030  
Packaging and forming specification  
E2: Embossed tape and reel  
VSON010V3030  
<Tape and Reel information>  
3.0 0.1  
Tape  
Embossed carrier tape  
3000pcs  
Quantity  
1PIN MARK  
E2  
S
Direction  
of feed  
The direction is the 1pin of product is at the upper left when you hold  
reel on the left hand and you pull out the tape on the right hand  
(
)
0.08  
S
2.0 0.1  
0.5  
C0.25  
1
5
10  
6
+0.05  
0.5  
Direction of feed  
1pin  
0.25  
-
0.04  
Reel  
(Unit : mm)  
Order quantity needs to be multiple of the minimum quantity.  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.08 - Rev.D  
15/15  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
against the possibility of physical injury, fire or any other damage caused in the event of the  
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM  
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed  
scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or  
system which requires an extremely high level of reliability the failure or malfunction of which  
may result in a direct threat to human life or create a risk of human injury (such as a medical  
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-  
controller or other safety device). ROHM shall bear no responsibility in any way for use of any  
of the Products for the above special purposes. If a Product is intended to be used for any  
such special purpose, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may  
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to  
obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120  
A

相关型号:

BD8316GWL

BD8316GWL是搭载了升压、反转2个信道的二极管整流型电流模式控制的开关稳压器。内置SW用FET和带软启动功能的升压负载SW,可减少外接部件。此外,各信道还可独立控制,因此可轻松构建非动作信道的低功耗序列。
ROHM

BD8316GWL-E2

Switching Regulator, PBGA11, UCSP-11
ROHM

BD8317GWL

BD8317GWL是搭载了升压、反转2个信道的二极管整流型电流模式控制的开关稳压器。内置SW用FET和带软启动功能的升压负载SW,可减少外接部件。此外,各信道还可独立控制,因此可轻松构建非动作信道的低功耗序列。
ROHM

BD8317GWL-E2

Switching Regulator,
ROHM

BD8325FVT-M

Built-in Secondary-side Driver
ROHM

BD8325FVT-ME2

Built-in Secondary-side Driver
ROHM

BD8355MWV

Regulators ICs for Digital Cameras and Camcorders System Switching Regulator IC with Built-in FET (10V)
ROHM

BD8372EFJ-M

LED Drivers for Automotive Light
ROHM

BD8372EFJ-ME2

LED Driver, 3-Segment, PDSO8, ROHS COMPLIANT, HTSOP-8
ROHM

BD8372HFP-M

LED Drivers for Automotive Light
ROHM

BD8372HFP-MTR

LED Drivers for Automotive Light
ROHM

BD8372UEFJ-M (新产品)

BD8372HFP-M, BD8372EFJ-M and BD8372UEFJ-M are LED source drivers capable of with standing high input voltage (50V MAX). The constant current output is set by either of two external resistors. It has built-in LED open/short protection, external resistance open/short protection and overvoltage protection that can achieve high reliability. It is possible to control all LEDs together and turn OFF even if LED causes short/open in a certain row when driving two or more LEDs by using multiple ICs.
ROHM