BD9A201FP4-LBZ [ROHM]

本产品面向工业设备市场、可保证长期稳定供货。是适合这些用途的产品。BD9A201FP4-LBZ是内置低导通电阻的功率MOSFET的同步整流降压DC/DC转换器。采用电流模式控制方式,容易进行相位补偿设定,负载响应性能良好。具有电源良好输出功能,可进行系统的时序控制。;
BD9A201FP4-LBZ
型号: BD9A201FP4-LBZ
厂家: ROHM    ROHM
描述:

本产品面向工业设备市场、可保证长期稳定供货。是适合这些用途的产品。BD9A201FP4-LBZ是内置低导通电阻的功率MOSFET的同步整流降压DC/DC转换器。采用电流模式控制方式,容易进行相位补偿设定,负载响应性能良好。具有电源良好输出功能,可进行系统的时序控制。

转换器
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中文:  中文翻译
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Datasheet  
2.7 V to 5.5 V Input, 2 A Integrated MOSFET  
Single Synchronous Buck DC/DC Converter  
BD9A201FP4-LBZ  
General Description  
Key Specifications  
This is the product guarantees long time support in  
Industrial market.  
BD9A201FP4-LBZ is  
Input Voltage Range:  
Output Voltage Range:  
Output Current:  
2.7 V to 5.5 V  
0.8 V to VIN x 0.7 V  
2 A (Max)  
a
synchronous buck DC/DC  
converter with built-in low on-resistance power MOSFETs.  
It is a current mode control DC/DC converter and features  
high-speed transient response. Phase compensation can  
also be set easily. Power Good function makes it possible  
for system to control sequence.  
Switching Frequency:  
High-side FET ON Resistance:  
Low-side FET ON Resistance:  
Shutdown Current:  
1000 kHz (Typ)  
50 mΩ (Typ)  
50 mΩ (Typ)  
0 μA (Typ)  
Package  
W (Typ) x D (Typ) x H (Max)  
2.8 mm x 2.92 mm x 0.95 mm  
Features  
TSOT23-8L  
Long Time Support Product for Industrial Applications  
Single Synchronous Buck DC/DC Converter  
Constant PWM Mode Control  
Power Good Function  
Over Voltage Protection (OVP)  
Over Current Protection (OCP)  
Short Circuit Protection (SCP)  
Thermal Shutdown Protection (TSD)  
Under Voltage Lockout Protection (UVLO)  
TSOT23-8L Package  
TSOT23-8L  
Applications  
Industrial Equipment  
Products for Industrial Equipment such as NC Machine  
Tools  
Secondary Power Supply and Adapter Equipment  
Communication Infrastructure Equipment  
Typical Application Circuit  
BD9A201FP4-LBZ  
VEN  
VIN  
EN  
PGD  
VIN  
BST  
SW  
0.1 μF  
CIN  
VOUT  
GND  
ITH  
L
R1  
R2  
COUT  
FB  
RCOMP  
CCOMP  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
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Pin Configuration  
(TOP VIEW)  
EN  
VIN  
1
2
3
4
8
7
6
5
BST  
SW  
GND  
FB  
PGD  
ITH  
Pin Descriptions  
Pin No. Pin Name  
Function  
Enable pin. The device starts up with setting VEN to 2.0 V (Min) or more. The device enters the  
shutdown mode with setting VEN to 0.8 V (Max) or less.  
1
2
3
4
5
6
7
8
EN  
VIN  
GND  
FB  
Power supply pin. Connecting 0.1 µF (Typ) and 10 µF (Typ) ceramic capacitors is recommended.  
The detail of a selection is described in Selection of Components Externally Connected 1. Input  
Capacitor.  
Ground pin.  
Output voltage feedback pin. See Selection of Components Externally Connected 3. Output  
Voltage Setting for the output voltage setting.  
Output pin of the Error Amplifier and input of the Current Comparator. See Selection of  
Components Externally Connected 4. Phase Compensation Components for the phase  
compensation setting.  
ITH  
Power good pin. This pin is an open drain output that requires a pull-up resistor. See Function  
Explanations (3) Power Good for setting the resistance. If not used, this pin can be left floating or  
connected to the ground.  
PGD  
SW  
Switch pin. This pin is connected to the source of the High-side FET and the drain of the Low-  
side FET. Connect a bootstrap capacitor of 0.1 µF between this pin and the BST pin. In addition,  
connect an inductor considering the direct current superimposition characteristic.  
Pin for bootstrap. Connect a bootstrap capacitor of 0.1 µF between this pin and the SW pin. The  
voltage of this pin is the gate drive voltage of the High-side FET.  
BST  
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Block Diagram  
PGD 6  
2 VIN  
8 BST  
7 SW  
3 GND  
Power  
Good  
Current  
Comparator  
VREF  
EN  
FB  
1
4
Error  
Amplifier  
R
S
Q
SLOPE  
Driver  
Logic  
CLK  
OSC  
Soft  
Start  
VIN  
UVLO  
SCP  
OVP  
TSD  
VIN  
ITH 5  
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Description of Blocks  
1. VREF  
This block generates the internal reference voltage.  
2. UVLO  
The UVLO block is for under voltage lockout protection. The device is shutdown when input voltage (VIN) falls to 2.45 V  
(Typ) or less. The threshold voltage has the 100 mV (Typ) hysteresis.  
3. SCP  
This block is for short circuit protection. After soft start is completed, if the FB voltage of output falls to 0.4 V (Typ) or less  
and remain in that state for 1 ms (Typ), the device is shutdown for 16 ms (Typ) and re-operates.  
4. OVP  
This block is for output over voltage protection. When the FB voltage VFB exceeds VFBTH x 110 % (Typ) or more, the output  
MOSFETs are off to prevent the increase in the output voltage. After the VFB falls VFBTH x 107 % (Typ) or less, the device is  
returned to normal operation condition. Switching operation restarts after VFB or less VFBTH (Typ).  
5. TSD  
The TSD block is for thermal protection. The device is shutdown when the junction temperature Tj reaches to 175 °C  
(Typ) or more. The device is automatically restored to normal operation with a hysteresis of 25 °C (Typ) when the Tj goes  
down.  
6. Soft Start  
The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the  
prevention of output voltage overshoot and inrush current. The internal soft start time is 1 ms (Typ).  
7. Error Amplifier  
The block is an error amplifier and its inputs are the internal reference voltage and the FB voltage. Phase compensation  
can be set by connecting a resistor and a capacitor to the ITH pin.  
8. Current Comparator  
The Current Comparator block compares the output voltage of the Error Amplifier and the Slope signal to determine the  
switching duty.  
9. Driver Logic  
This block controls switching operation and various protection functions.  
10.OSC  
This block generates the oscillating frequency.  
11.Power Good  
This block is for power good function. When the output voltage reaches within ±7 % (Typ) of the setting voltage, the built-  
in open drain Nch MOSFET connected to the PGD pin is turned off and the PGD pin becomes Hi-Z (High impedance).  
When the output voltage reaches outside ±10 % (Typ) of the setting voltage, the open drain Nch MOSFET is turned on.  
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Absolute Maximum Ratings (Ta = 25 °C)  
Parameter  
Symbol  
Rating  
Unit  
Input Voltage  
VIN  
VSW  
-0.3 to +7  
-0.3 to VIN + 0.3  
-3 to VIN + 0.3  
-0.3 to +14  
-0.3 to +7  
V
V
SW Voltage  
SW Voltage (10 ns pulse width)  
Voltage from GND to BST  
Voltage from SW to BST  
FB Voltage  
VSWAC  
VBST  
V
V
ΔVBST-SW  
VFB  
V
-0.3 to +7  
V
ITH Voltage  
VITH  
-0.3 to +7  
V
EN Voltage  
VEN  
-0.3 to VIN  
-0.3 to +7  
V
PGD Voltage  
VPGD  
Tjmax  
Tstg  
V
Maximum Junction Temperature  
Storage Temperature Range  
150  
°C  
°C  
-55 to +150  
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit  
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is  
operated over the absolute maximum ratings.  
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the  
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing  
board size and copper area so as not to exceed the maximum junction temperature rating.  
Thermal Resistance (Note 1)  
Thermal Resistance (Typ)  
Parameter  
Symbol  
Unit  
1s(Note 3)  
2s2p(Note 4)  
TSOT23-8L  
Junction to Ambient  
Junction to Top Characterization Parameter (Note 2)  
θJA  
185.4  
31.0  
85.4  
26.0  
°C/W  
°C/W  
ΨJT  
(Note 1) Based on JESD51-2A (Still-Air).  
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface  
of the component package.  
(Note 3) Using a PCB board based on JESD51-3.  
(Note 4) Using a PCB board based on JESD51-5, 7.  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
Single  
114.3 mm x 76.2 mm x 1.57 mmt  
Top  
Copper Pattern  
Thickness  
70 μm  
Footprints and Traces  
Thermal Via (Note 5)  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
114.3 mm x 76.2 mm x 1.6 mmt  
2 Internal Layers  
Pitch  
Diameter  
4 Layers  
1.20 mm  
Φ0.30 mm  
Top  
Copper Pattern  
Bottom  
Thickness  
70 μm  
Copper Pattern  
Thickness  
35 μm  
Copper Pattern  
Thickness  
70 μm  
Footprints and Traces  
74.2 mm x 74.2 mm  
74.2 mm x 74.2 mm  
(Note 5) This thermal via connects with the copper pattern of all layers.  
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Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Input Voltage  
VIN  
Topr  
IOUT  
VOUT  
2.7  
-40  
0
-
-
-
-
5.5  
+85  
V
°C  
A
Operating Temperature (Note 1)  
Output Current (Note 1)  
Output Voltage Setting (Note 2)  
2
0.8  
VIN x 0.7  
V
(Note 1) Tj must be 125 °C or less under the actual operating environment. Life time is derated at junction temperature greater or than 125 °C.  
(Note 2) Use under the condition of VOUT ≥ VIN × 0.1 [V].  
Electrical Characteristics (Unless otherwise specified Ta = 25 °C, VIN = 5 V, VEN = 5 V)  
Parameter  
Input Supply  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
Shutdown Current  
ISTBY  
IOPR  
VUVLO1  
VUVLO2  
-
-
0
10  
μA  
µA  
VEN = 0 V  
IOUT = 0 A  
No switching  
Operating Circuit Current  
350  
500  
UVLO Detection Threshold Voltage  
UVLO Release Threshold Voltage  
Enable  
2.350  
2.425  
2.450  
2.550  
2.550  
2.700  
V
V
VIN falling  
VIN rising  
EN Threshold Voltage High  
EN Threshold Voltage Low  
EN Input Current  
VENH  
VENL  
IEN  
2.0  
GND  
-
-
-
VIN  
0.8  
10  
V
V
5
µA  
Power Good  
VFBTH  
x 0.87  
VFBTH  
x 0.90  
VFBTH  
x 1.07  
VFBTH  
x 1.04  
VFBTH  
x 0.90  
VFBTH  
x 0.93  
VFBTH  
x 1.10  
VFBTH  
x 1.07  
VFBTH  
x 0.93  
VFBTH  
x 0.96  
VFBTH  
x 1.13  
VFBTH  
x 1.10  
VFB Falling  
VFB Rising  
VFB Rising  
Falling (Fault) Voltage  
Rising (Good) Voltage  
Rising (Fault) Voltage  
Falling (Good) Voltage  
VPGDFF  
VPGDRG  
VPGDRF  
VPGDFG  
V
V
V
V
VFB Falling  
VPGD = 5 V  
PGD Output Leakage Current  
PGD FET ON Resistance  
PGD Low Level Voltage  
ILKPGD  
RPGD  
-
-
-
0
5
µA  
Ω
100  
0.1  
200  
0.2  
PGDVL  
V
IPGD = 1 mA  
Reference Voltage, Error Amplifier, Soft Start  
FB Threshold Voltage  
FB Input Current  
VFBTH  
IFB  
0.792  
0.800  
0.808  
V
-
-
1
µA  
µA  
VFB = 0.8 V  
VFB = 0.7 V  
VFB = 0.9 V  
10  
20  
40  
ITH Source Current  
ITH Sink Current  
IITHSO  
IITHSI  
tSS  
µA  
ms  
10  
20  
40  
Soft Start Time  
0.5  
1.0  
2.0  
SW (MOSFET)  
Switching Frequency  
Max Duty  
fOSC  
DMAX  
RONH  
RONL  
800  
1000  
-
1200  
-
kHz  
%
70  
-
High-side FET ON Resistance  
Low-side FET ON Resistance  
Protection  
50  
50  
100  
100  
mΩ  
mΩ  
ΔVBST-SW = 5 V  
-
Short Circuit Protection Detection  
VSCP  
0.28  
0.40  
0.52  
V
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Typical Performance Curves  
450  
400  
350  
300  
250  
200  
150  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
V
V
IN  
= 2.7 V  
V
= 5.0 V  
IN  
= 2.7 V  
= 5.0 V  
IN  
V
IN  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 1. Shutdown Current vs Temperature  
Figure 2. Operating Circuit Current vs Temperature  
1200  
0.810  
V
IN  
V
IN  
= 2.7 V  
= 2.7 V  
1150  
1100  
1050  
1000  
950  
V
IN  
V
IN = 5.0 V  
= 5.0 V  
0.805  
0.800  
0.795  
0.790  
900  
850  
800  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 3. Switching Frequency vs Temperature  
Figure 4. FB Threshold Voltage vs Temperature  
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Typical Performance Curves – continued  
35  
35  
30  
25  
20  
15  
10  
5
V
V
IN  
= 2.7 V  
= 2.7 V  
V
= 5.0 V  
IN  
IN  
30  
25  
20  
15  
10  
5
V
IN = 5.0 V  
0
0
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 5. ITH Sink Current vs Temperature  
Figure 6. ITH Source Current vs Temperature  
140  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VIN  
= 2.7 V  
V
= 2.7 V  
= 5.0 V  
IN  
120  
100  
80  
60  
40  
20  
0
V
IN = 3.3 V  
V
IN  
VIN  
= 5.0 V  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 7. Soft Start Time vs Temperature  
Figure 8. High-side FET ON Resistance vs Temperature  
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Typical Performance Curves – continued  
140  
2.700  
2.650  
2.600  
2.550  
2.500  
2.450  
2.400  
2.350  
2.300  
VIN  
= 2.7 V  
120  
100  
80  
60  
40  
20  
0
V
IN = 3.3 V  
VIN = 5.0 V  
UVLO Release (VIN rising)  
UVLO Detection (VIN falling)  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 9. Low-side FET ON Resistance vs Temperature  
Figure 10. UVLO Threshold Voltage vs Temperature  
10  
2.0  
V
IN = 5 V  
VIN = VEN = 5 V  
9
8
7
6
5
4
3
2
1
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VENH (High Level)  
VENL (Low Level)  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 11. EN Threshold Voltage vs Temperature  
Figure 12. EN Input Current vs Temperature  
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Typical Performance Curves – continued  
Time: 1 ms/div  
VIN: 5 V/div  
Time: 1 ms/div  
VIN: 5 V/div  
VEN: 5 V/div  
VEN: 5 V/div  
VOUT: 1 V/div  
VSW: 5 V/div  
VOUT: 1 V/div  
VSW: 5 V/div  
Figure 13. Start-up at RLOAD = 0.9 Ω  
(VEN = VIN, VIN = 5 V, VOUT = 1.8 V)  
Figure 14. Shutdown at RLOAD = 0.9 Ω  
(VEN = VIN, VIN = 5 V, VOUT = 1.8 V)  
Time: 1 ms/div  
Time: 1 ms/div  
VIN: 5 V/div  
VIN: 5 V/div  
VEN: 5 V/div  
VEN: 5 V/div  
VOUT: 1 V/div  
VSW: 5 V/div  
VOUT: 1 V/div  
VSW: 5 V/div  
Figure 15. Start-up at RLOAD = 0.9 Ω  
(VEN = 0 V to 5 V, VIN = 5 V, VOUT = 1.8 V)  
Figure 16. Shutdown at RLOAD = 0.9 Ω  
(VEN = 5 V to 0 V, VIN = 5 V, VOUT = 1.8 V)  
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BD9A201FP4-LBZ  
Typical Performance Curves – continued  
Time: 1 μs/div  
Time: 1 μs/div  
VOUT: 20 mV/div  
VSW: 2 V/div  
VOUT: 20 mV/div  
VSW: 2 V/div  
Figure 17. Output Voltage Ripple  
(VIN = 5 V, VOUT = 1.8 V, IOUT = 0 A)  
Figure 18. Output Voltage Ripple  
(VIN = 5 V, VOUT = 1.8 V, IOUT = 2 A)  
Time: 1 μs/div  
Time: 1 μs/div  
VIN: 100 mV/div  
VIN: 100 mV/div  
VSW: 2 V/div  
VSW: 2 V/div  
Figure 19. Input Voltage Ripple  
(VIN = 5 V, VOUT = 1.8 V, IOUT = 0 A)  
Figure 20. Input Voltage Ripple  
(VIN = 5 V, VOUT = 1.8 V, IOUT = 2 A)  
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BD9A201FP4-LBZ  
Function Explanations  
1. Basic Operation  
(1) Enable Control  
The startup and shutdown can be controlled by the EN voltage VEN. When VEN becomes 2.0 V (Min) or more, the  
internal circuit is activated and the device starts up. When VEN becomes 0.8 V (Max) or less, the device is shutdown.  
In this shutdown mode, the High-side FET and the Low-side FET are turned off. The start-up with VEN must be at the  
same time of the input voltage VIN (VIN = VEN) or after supplying VIN.  
VIN  
0 V  
VEN  
VENH  
VENL  
0 V  
VOUT  
0 V  
Start-up  
Shutdown  
Figure 21. Start-up and Shutdown with Enable Control Timing Chart  
(2) Soft Start  
When VEN goes high, soft start function operates and output voltage gradually rises. This soft start function can prevent  
overshoot of the output voltage and excessive inrush current. The soft start time tSS is 1 ms (Typ).  
(3) Power Good  
When the output voltage reaches within ±7 % (Typ) of the setting voltage, the built-in open drain Nch MOSFET  
connected to the PGD pin is turned off and the PGD pin becomes Hi-Z (High impedance). When the output voltage  
reaches outside ±10 % (Typ) of the setting voltage, the open drain Nch MOSFET is turned on. It is recommended to  
connect a pull-up resistor of 10 kΩ to 100 kΩ.  
+10 % (Typ)  
+7 % (Typ)  
VOUT  
-7 % (Typ)  
-10 % (Typ)  
VPGD  
0 V  
Figure 22. Power Good Timing Chart  
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Function Explanations – continued  
2. Protection  
The protection circuits are intended for prevention of damage caused by unexpected accidents. Do not use the  
continuous protection.  
(1) Short Circuit Protection (SCP)  
The Short Circuit Protection block compares the FB voltage VFB with the internal reference voltage. When the VFB has  
fallen to 0.4 V (Typ) or less and remained there for 1 ms (Typ), SCP stops the operation for 16 ms (Typ) and  
subsequently initiates a restart. SCP does not operate during the soft start even if the device is in the SCP condition.  
Do not to exceed maximum junction temperature rating (Tjmax = 150 °C) during OCP and SCP operation.  
Table 1. The Operating Condition of SCP  
VEN  
VFB  
Start-up  
SCP  
≤ 0.4 V (Typ)  
> 0.4 V (Typ)  
≤ 0.4 V (Typ)  
> 0.4 V (Typ)  
-
Disable  
Disable  
Enable  
Disable  
Disable  
During Soft Start  
≥ 2.0 V (Min)  
Complete Soft Start  
Shutdown  
≤ 0.8 V (Max)  
(2) Over Current Protection (OCP)  
The Over Current Protection function operates by limiting the current that flows through High-side FET at each cycle  
of the switching frequency. Over current limit is 6.0 A (Typ).  
VOUT  
SCP delay time  
1 ms (Typ)  
SCP delay time  
1 ms (Typ)  
0.8 V  
SCP threshold voltage:  
VFB  
0.4 V (Typ)  
SCP release  
High-side  
FET gate  
Low  
Low  
Low-side  
FET gate  
OCP  
threshold  
6.0 A (Typ)  
Inductor Current  
(Output Current)  
Build-in  
IC HICCUP  
Delay Signal  
16 ms (Typ)  
SCP reset  
Figure 23. OCP and SCP Timing Chart  
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2. Protection – continued  
(3) Under Voltage Lockout Protection (UVLO)  
When input voltage VIN falls to 2.45 V (Typ) or less, the device is shutdown. When VIN becomes 2.55 V (Typ) or more,  
the device starts up. The hysteresis is 100 mV (Typ).  
VIN  
(= VEN  
)
Hysteresis  
VUVLOHYS = 100 mV (Typ)  
VOUT  
UVLO Release  
VUVLO2 = 2.55 V (Typ)  
UVLO Detection  
VUVLO1 = 2.45 V (Typ)  
0 V  
VOUT  
0 V  
tSS  
Figure 24. UVLO Timing Chart  
(4) Thermal Shutdown Protection (TSD)  
Thermal shutdown circuit prevents heat damage to the IC. The device should always operate within the IC’s maximum  
junction temperature rating (Tjmax = 150 °C). However, if it continues exceeding the rating and the junction temperature  
Tj rises to 175 °C (Typ), the TSD circuit is activated and it turns the output MOSFETs off. When the Tj falls below the  
TSD threshold, the circuits are automatically restored to normal operation. The TSD threshold has a hysteresis of 25 °C  
(Typ). Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings. Therefore, under  
no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from  
heat damage.  
(5) Over Voltage Protection (OVP)  
When the FB voltage VFB exceeds VFBTH x 110 % (Typ) or more, the output MOSFETs are off to prevent the increase  
in the output voltage. After the VFB falls VFBTH x 107 % (Typ) or less, the output MOSFETs are returned to normal  
operation condition.  
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Application Examples  
1. VIN = 5 V, VOUT = 1.8 V  
Table 2. Specification of Application  
Parameter  
Symbol  
Specification Value  
5 V (Typ)  
1.8 V (Typ)  
2 A  
Input Voltage  
VIN  
VOUT  
IOUTMAX  
Ta  
Output Voltage  
Maximum Output Current  
Temperature  
25 °C  
BD9A201FP4-LBZ  
VIN  
VIN  
BST  
CBOOT  
CIN2  
CIN1  
VOUT  
SW  
GND  
L
R0  
VEN  
EN  
R1A  
R1B  
R2  
COUT1  
COUT2  
ITH  
CFB  
RCOMP  
FB  
PGD  
CCOMP  
Figure 25. Application Circuit  
Table 3. Recommended Component Values  
Part No.  
Value  
1.5 μH  
Part Name  
Size Code (mm)  
Manufacturer  
Murata  
Murata  
Murata  
Murata  
Murata  
-
L
FDSD0420-H-1R5M  
4040  
1005  
2012  
1005  
2012  
-
(Note 1)  
CIN1  
0.1 μF (50 V, X5R, ±15 %) GRM155R61H104KE14  
22 μF (10 V, X5R, ±20 %) GRM21BR61A226ME51  
0.1 μF (50 V, X5R, ±15 %) GRM155R61H104KE14  
(Note 2)  
CIN2  
(Note 3)  
CBOOT  
(Note 4)  
COUT1  
47 μF (10 V, X5R, ±20 %)  
GRM21BR61A476ME15  
COUT2  
CFB  
-
-
-
-
GRM1555C1H272JE01  
MCR01MZPF9101  
-
-
-
CCOMP  
RCOMP  
R1A  
2.7 nF (50 V, C0G, ±5 %)  
9.1 kΩ (1 %, 1/16 W)  
Short  
1005  
1005  
-
Murata  
ROHM  
-
R1B  
30 kΩ (1 %, 1/16 W)  
24 kΩ (1 %, 1/16 W)  
Short  
MCR01MZPF3002  
MCR01MZPF2402  
-
1005  
1005  
-
ROHM  
ROHM  
-
R2  
(Note 5)  
R0  
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor CIN1 as close as possible to the VIN pin and the GND  
pin.  
(Note 2) For the input capacitor CIN2, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no  
less than 3 μF.  
(Note 3) For the bootstrap capacitor CBOOT, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance  
of no less than 0.022 μF.  
(Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor COUT1 and  
COUT2, the loop response characteristics may change. Confirm with the actual application.  
(Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R0, it is possible to measure the frequency response  
(phase margin) using a FRA. However, the resistor is not used in actual application, use this resistor pattern in short-circuit mode.  
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1. VIN = 5 V, VOUT = 1.8 V – continued  
Time: 1 µs/div  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VOUT: 20 mV/div  
VSW: 2 V/div  
0.001  
0.01  
0.1  
1
10  
Output Current : IOUT [A]  
Figure 26. Efficiency vs Output Current  
Figure 27. Output Ripple Voltage (IOUT = 2 A)  
Time: 1 ms/div  
180  
135  
90  
80  
60  
40  
20  
0
Gain  
Phase  
VOUT: 100 mV/div  
45  
IOUT: 1 A/div  
0
-45  
-90  
-20  
-40  
1
10  
100  
1000  
Frequency [kHz]  
Figure 28. Frequency Characteristics (IOUT = 1 A)  
Figure 29. Load Transient Response  
(IOUT = 0.5 A to 2.0 A)  
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Application Examples – continued  
2. VIN = 5 V, VOUT = 1.5 V  
Table 4. Specification of Application  
Parameter  
Input Voltage  
Symbol  
Specification Value  
5 V (Typ)  
1.5 V (Typ)  
2 A  
VIN  
VOUT  
IOUTMAX  
Ta  
Output Voltage  
Maximum Output Current  
Temperature  
25 °C  
BD9A201FP4-LBZ  
VIN  
VIN  
BST  
CBOOT  
CIN2  
CIN1  
VOUT  
SW  
GND  
L
R0  
VEN  
EN  
R1A  
R1B  
R2  
COUT1  
COUT2  
ITH  
CFB  
RCOMP  
FB  
PGD  
CCOMP  
Figure 30. Application Circuit  
Table 5. Recommended Component Values  
Part No.  
Value  
Part Name  
Size Code (mm)  
Manufacturer  
Murata  
Murata  
Murata  
Murata  
Murata  
-
L
1.5 μH  
FDSD0420-H-1R5M  
4040  
1005  
2012  
1005  
2012  
-
(Note 1)  
CIN1  
0.1 μF (50 V, X5R, ±15 %) GRM155R61H104KE14  
22 μF (10 V, X5R, ±20 %) GRM21BR61A226ME51  
0.1 μF (50 V, X5R, ±15 %) GRM155R61H104KE14  
(Note 2)  
CIN2  
(Note 3)  
CBOOT  
(Note 4)  
COUT1  
47 μF (10 V, X5R, ±20 %)  
GRM21BR61A476ME15  
COUT2  
CFB  
-
-
-
-
GRM1555C1H272JE01  
MCR01MZPF9101  
-
-
-
CCOMP  
RCOMP  
R1A  
2.7 nF (50 V, C0G, ±5 %)  
9.1 kΩ (1 %, 1/16 W)  
Short  
1005  
1005  
-
Murata  
ROHM  
-
R1B  
16 kΩ (1 %, 1/16 W)  
18 kΩ (1 %, 1/16 W)  
Short  
MCR01MZPF1602  
MCR01MZPF1802  
-
1005  
1005  
-
ROHM  
ROHM  
-
R2  
(Note 5)  
R0  
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor CIN1 as close as possible to the VIN pin and the GND  
pin.  
(Note 2) For the input capacitor CIN2, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no  
less than 3 μF.  
(Note 3) For the bootstrap capacitor CBOOT, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance  
of no less than 0.022 μF.  
(Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor COUT1 and  
COUT2, the loop response characteristics may change. Confirm with the actual application.  
(Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R0, it is possible to measure the frequency response  
(phase margin) using a FRA. However, the resistor is not used in actual application, use this resistor pattern in short-circuit mode.  
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2. VIN = 5 V, VOUT = 1.5 V – continued  
Time: 1 µs/div  
VOUT: 20 mV/div  
VSW: 2 V/div  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.001  
0.01  
0.1  
1
10  
Output Current : IOUT [A]  
Figure 31. Efficiency vs Output Current  
Figure 32. Output Ripple Voltage (IOUT = 2 A)  
Time: 1 ms/div  
180  
135  
90  
80  
60  
40  
20  
0
Gain  
Phase  
VOUT: 100 mV/div  
45  
IOUT: 1 A/div  
0
-45  
-20  
-40  
-90  
1
10  
100  
1000  
Frequency [kHz]  
Figure 33. Frequency Characteristics (IOUT = 1 A)  
Figure 34. Load Transient Response  
(IOUT = 0.5 A to 2.0 A)  
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Application Examples – continued  
3. VIN = 5 V, VOUT = 1.2 V  
Table 6. Specification of Application  
Parameter  
Input Voltage  
Symbol  
Specification Value  
5 V (Typ)  
1.2 V (Typ)  
2 A  
VIN  
VOUT  
IOUTMAX  
Ta  
Output Voltage  
Maximum Output Current  
Temperature  
25 °C  
BD9A201FP4-LBZ  
VIN  
VIN  
BST  
CBOOT  
CIN2  
CIN1  
VOUT  
SW  
GND  
L
R0  
VEN  
EN  
R1A  
R1B  
R2  
COUT1  
COUT2  
ITH  
CFB  
RCOMP  
FB  
PGD  
CCOMP  
Figure 35. Application Circuit  
Table 7. Recommended Component Values  
Size Code  
Part No.  
Value  
Part Name  
Manufacturer  
(mm)  
L
1.5 μH  
FDSD0420-H-1R5M  
4040  
Murata  
Murata  
Murata  
Murata  
Murata  
-
(Note 1)  
CIN1  
0.1 μF (50 V, X5R, ±15 %) GRM155R61H104KE14  
22 μF (10 V, X5R, ±20 %) GRM21BR61A226ME51  
0.1 μF (50 V, X5R, ±15 %) GRM155R61H104KE14  
1005  
2012  
1005  
2012  
-
(Note 2)  
CIN2  
(Note 3)  
CBOOT  
(Note 4)  
COUT1  
47 μF (10 V, X5R, ±20 %)  
GRM21BR61A476ME15  
COUT2  
CFB  
-
-
-
-
GRM1555C1H272JE01  
MCR01MZPF9101  
-
-
-
CCOMP  
RCOMP  
R1A  
2.7 nF (50 V, C0G, ±5 %)  
9.1 kΩ (1 %, 1/16 W)  
Short  
1005  
1005  
-
Murata  
ROHM  
-
R1B  
10 kΩ (1 %, 1/16 W)  
20 kΩ (1 %, 1/16 W)  
Short  
MCR01MZPF1002  
MCR01MZPF2002  
-
1005  
1005  
-
ROHM  
ROHM  
-
R2  
(Note 5)  
R0  
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor CIN1 as close as possible to the VIN pin and the GND  
pin.  
(Note 2) For the input capacitor CIN2, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no  
less than 3 μF.  
(Note 3) For the bootstrap capacitor CBOOT, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance  
of no less than 0.022 μF.  
(Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor COUT1 and  
COUT2, the loop response characteristics may change. Confirm with the actual application.  
(Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R0, it is possible to measure the frequency response  
(phase margin) using a FRA. However, the resistor is not used in actual application, use this resistor pattern in short-circuit mode.  
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3. VIN = 5 V, VOUT = 1.2 V – continued  
Time: 1 µs/div  
VOUT: 20 mV/div  
VSW: 2 V/div  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.001  
0.01  
0.1  
1
10  
Output Current : IOUT [A]  
Figure 36. Efficiency vs Output Current  
Figure 37. Output Ripple Voltage (IOUT = 2 A)  
Time: 1 ms/div  
180  
135  
90  
80  
60  
40  
20  
0
Gain  
Phase  
VOUT: 100 mV/div  
45  
IOUT: 1 A/div  
0
-45  
-20  
-40  
-90  
1
10  
100  
1000  
Frequency [kHz]  
Figure 38. Frequency Characteristics (IOUT = 1 A)  
Figure 39. Load Transient Response  
(IOUT = 0.5 A to 2.0 A)  
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Selection of Components Externally Connected  
Contact us if not use the recommended component values in Application Examples.  
1. Input Capacitor  
Use ceramic type capacitor for the input capacitor. The input capacitor is used to reduce the input ripple noise and it is  
effective by being placed as close as possible to the VIN pin. Set the capacitor value so that it does not fall to 3 μF  
considering the capacitor value variances, temperature characteristics, DC bias characteristics, aging characteristics, and  
etc. The PCB layout and the position of the capacitor may lead to IC malfunction. Refer to the notes on the PCB layout on  
PCB Layout Design when designing PCB layout. In addition, the capacitor with value 0.1 μF can be connected as close as  
possible to the VIN pin and the GND pin in order to reduce the high frequency noise.  
2. Output LC Filter  
In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the output  
voltage.  
VIN  
IL  
Inductor saturation current > IOUTMAX + ∆IL/2  
L
VOUT  
Driver  
∆IL  
COUT  
Maximum Output Current IOUTMAX  
t
Figure 40. Waveform of Inductor Current  
Figure 41. Output LC Filter Circuit  
For example, given that VIN = 5 V, VOUT = 1.8 V, L = 1.5 μH, and the switching frequency fOSC = 1000 kHz, Inductor current  
ΔIL can be represented by the following equation.  
1
(
)
×
∆퐼= 푂푈푇 × 푉 푂푈푇  
= 0.768 [A]  
×퐿  
ꢀ푁  
ꢂꢃ  
×푓  
ꢄ푆퐶  
The rated current of the inductor (Inductor saturation current) must be more than the sum of the maximum output current  
IOUTMAX and 1/2 of the inductor ripple current ΔIL.  
Use ceramic type capacitor for the output capacitor COUT. COUT affects the output ripple voltage. Select COUT so that it  
must satisfy the required ripple voltage characteristics.  
The output ripple voltage can be estimated by the following equation.  
1
푅푃퐿 = ∆퐼× ꢅꢆ퐸ꢇ푅  
+
[V]  
ꢄ푆퐶  
ꢈ×ꢉ  
×푓  
ꢄꢊꢋ  
where:  
퐸ꢇ푅 is the Equivalent Series Resistance (ESR) of the output capacitor.  
For example, given that COUT = 44 μF and RESR = 3 mΩ, ΔVRPL can be calculated as below.  
1
푅푃퐿 = 0.768 퐴 × ꢅ3 푚훺 + ꢈ×44 휇퐹×1ꢍꢍꢍ 푘퐻푧ꢌ = ꢎ.5 [mV]  
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2. Output LC Filter – continued  
In addition, the charging current ICAP to the output capacitor can be represented by the following equation.  
1
(
)
ꢉꢏ푃  
=
× ꢐ푂푈푇 + ꢐ퐿푂ꢏ퐷 × 푂푈푇 [A]  
푆푆  
From the above formula, given that VIN = 5 V, VOUT = 3.3 V, L = 1.5 µH, fOSC = 800 kHz (Min), COUT = 44 µF, tSS = 0.5 ms  
(Min), and IOUTSS = 2 A, COUTMAX can be calculated as below.  
∆ꢀ  
푆푆  
푂푈푇푀ꢏ푋  
<
× ꢅ3.8 − 퐼푂ꢇꢇ −  
ꢌ − ꢐ푂푈푇 = ꢒ57.9 [μF]  
2
ꢄꢊꢋ  
If the total capacitance connected to VOUT is more than COUTMAX, over current protection may be activated by the inrush  
current at startup and prevented to turn on the output. Confirm this on the actual application.  
3. Output Voltage Setting  
The output voltage can be set by the feedback resistance ratio connected to the FB pin. For recommended R1 and R2, use  
the values in Application Examples.  
VOUT  
푅 ꢔ푅  
푂푈푇  
=
× 0.8 [V]  
R1  
Error Amplifier  
FB  
R2  
0.8 V  
(Typ)  
Figure 42. Feedback Resistor Circuit  
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Selection of Components Externally Connected – continued  
4. Phase Compensation Components  
A current mode control buck DC/DC converter is two-pole, one-zero system. Two poles are formed by an error amplifier  
and load, and the one zero point is added by phase compensation. The phase compensation resistor R1 determines the  
crossover frequency fCRS that the total loop gain of the DC/DC converter is 0 dB. A high value fCRS provides a good load  
transient response characteristic but instability. Conversely, a low value fCRS greatly stabilizes the characteristics but the  
load transient response characteristic is impaired.  
(1) Selection of Phase Compensation Resistor RCOMP  
The Phase Compensation Resistance RCOMP can be determined by using the following equation.  
ꢖ × 휋 × 푂푈푇 × ꢗ × ꢐ푂푈푇  
ꢉ푅ꢇ  
[Ω]  
ꢉ푂푀푃  
=
퐹퐵 × 퐺푀푃 × 퐺푀ꢏ  
where:  
푂푈푇 is the Output Voltage  
is the Crossover Frequency  
ꢉ푅ꢇ  
푂푈푇 is the Output Capacitance  
퐹퐵 is the Feedback Reference Voltage 0.8 V (Typ)  
푀푃 is the Current Sense Gain 13 A/V (Typ)  
푀ꢏ is the Error Amplifier Trans conductance 260 µA/V (Typ)  
(2) Selection of Phase Compensation Capacitance CCOMP  
For stable operations of DC/DC converter, the zero point (phase lead) to cancel the phase lag formed by loads is  
determined with CCOMP. Inserting a zero point below 1/9 of the crossover frequency often provides good characteristics.  
CCOMP can be calculated with the following equation.  
[F]  
ꢉ푂푀푃  
=
ꢖ × 휋 × ꢆꢉ푂푀푃 × ꢗ  
where:  
is the zero point to be inserted  
(3) Loop Stability  
Actually, characteristics will vary depending on PCB layout, arrangement of wiring, kinds of parts used and use  
conditions (temperature, etc.). Be sure to check stability and responsiveness with actual apparatus. Phase margin of  
at least 45° in the worst conditions is recommended. Gain Phase Analyzer or Frequency Response Analyzer FRA is  
used to check frequency characteristics with actual apparatus. Contact the measurement apparatus manufacturer for  
measurement method.  
5. Bootstrap Capacitor  
The bootstrap capacitor 0.1 μF is recommended. Connect the capacitor between the SW pin and the BOOT pin. For the  
capacitance, take temperature characteristics, DC bias characteristics, and etc. into consideration to set to the actual  
capacitance of no less than 0.022 μF.  
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PCB Layout Design  
PCB layout design for DC/DC converter is very important. Appropriate layout can avoid various problems concerning power  
supply circuit. Figure 43-a to Figure 43-c show the current path in a buck DC/DC converter circuit. The Loop 1 in Figure 43-a  
is a current path when H-side switch is ON and L-side switch is OFF, the Loop 2 in Figure 43-b is when H-side switch is OFF  
and L-side switch is ON. The thick line in Figure 43-c shows the difference between Loop1 and Loop2. The current in thick  
line change sharply each time the switching element H-side and L-side switch change from OFF to ON, and vice versa. These  
sharp changes induce a waveform with harmonics in this loop. Therefore, the loop area of thick line that is consisted by input  
capacitor and IC should be as small as possible to minimize noise. For more details, refer to application note of switching  
regulator series “PCB Layout Techniques of Buck Converter”.  
Loop1  
VIN  
VOUT  
L
H-side Switch  
CIN  
COUT  
L-side Switch  
GND  
GND  
Figure 43-a. Current Path when H-side Switch = ON, L-side Switch = OFF  
VIN  
VOUT  
L
H-side Switch  
CIN  
COUT  
Loop2  
L-side Switch  
GND  
GND  
Figure 43-b. Current Path when H-side Switch = OFF, L-side Switch = ON  
VIN  
VOUT  
L
CIN  
COUT  
High-side FET  
Low-side FET  
GND  
GND  
Figure 43-c. Difference of Current and Critical Area in Layout  
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BD9A201FP4-LBZ  
PCB Layout Design – continued  
When designing the PCB layout, pay attention to the following points:  
Connect the input capacitor CIN1 and CIN2 as close as possible to the VIN pin and the GND pin on the same plane as  
the IC.  
Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern  
L as thick and as short as possible.  
The feedback line connected to the FB pin should be as far away from the SW nodes as possible.  
Place the output capacitor COUT away from input capacitor CIN1 and CIN2 to avoid harmonics noise from the input.  
Separate the reference ground and the power ground and connect them through VIA. The reference ground should be  
connected to the power ground that is close to the output capacitor COUT. It is because COUT has less high frequency  
switching noise.  
R0 is provided for the measurement of feedback frequency characteristics (optional). By inserting a resistor into R0, it  
is possible to measure the frequency characteristics of feedback (phase margin) using FRA etc. R0 is short-circuited  
for normal use.  
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25/31  
BD9A201FP4-LBZ  
I/O Equivalence Circuits  
1. EN  
4. FB  
20 kΩ  
20 kΩ  
FB  
EN  
430 kΩ  
10 kΩ  
570 kΩ  
5. ITH  
6. PGD  
VIN  
PGD  
60 Ω  
40 Ω  
ITH  
7. SW, 8. BST  
VIN  
BST  
VIN  
SW  
VIN  
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© 2018 ROHM Co., Ltd. All rights reserved.  
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BD9A201FP4-LBZ  
Operational Notes  
1.  
2.  
3.  
Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply  
pins.  
Power Supply Lines  
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at  
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic  
capacitors.  
Ground Voltage  
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,  
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground  
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below  
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions  
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.  
4.  
Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations  
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.  
5.  
6.  
Recommended Operating Conditions  
The function and operation of the IC are guaranteed within the range specified by the recommended operating  
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical  
characteristics.  
Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow  
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.  
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing  
of connections.  
7.  
Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject  
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should  
always be turned off completely before connecting or removing it from the test setup during the inspection process. To  
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and  
storage.  
8.  
9.  
Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in  
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
Unused Input Pins  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge  
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause  
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power  
supply or ground line.  
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Operational Notes – continued  
10. Regarding the Input Pin of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a  
parasitic diode or transistor. For example (refer to figure below):  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to  
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be  
avoided.  
Resistor  
Transistor (NPN)  
Pin A  
Pin B  
Pin B  
B
E
C
Pin A  
B
C
E
P
P+  
P+  
N
P+  
P
P+  
N
N
N
N
N
N
N
Parasitic  
Elements  
Parasitic  
Elements  
P Substrate  
GND GND  
P Substrate  
GND  
GND  
Parasitic  
Elements  
Parasitic  
Elements  
N Region  
close-by  
Figure 44. Example of Monolithic IC Structure  
11. Ceramic Capacitor  
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others.  
12. Thermal Shutdown Circuit (TSD)  
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always  
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the  
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj  
falls below the TSD threshold, the circuits are automatically restored to normal operation.  
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no  
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat  
damage.  
13. Over Current Protection Circuit (OCP)  
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This  
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should  
not be used in applications characterized by continuous operation or transitioning of the protection circuit.  
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Ordering Information  
B D 9 A 2 0  
1
F
P
4 - L B Z TL  
Package  
FP4-Z: TSOT23-8L  
Product class  
LB: for Industrial applications  
Packaging and forming specification  
TL: Embossed tape and reel  
Marking Diagram  
TSOT23-8L (TOP VIEW)  
Part Number Marking  
LOT Number  
AA  
Pin 1 Mark  
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Physical Dimension and Packing Information  
Package Name  
TSOT23-8L  
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Revision History  
Date  
Revision  
001  
Changes  
New Release  
26.Oct.2020  
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Notice  
Precaution on using ROHM Products  
(Note 1)  
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment  
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,  
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales  
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any  
ROHM’s Products for Specific Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.  
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the  
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our  
Products under any special or extraordinary environments or conditions (as exemplified below), your independent  
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.  
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble  
cleaning agents for cleaning residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PAA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice-PAA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
General Precaution  
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.  
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this document is current as of the issuing date and subject to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales  
representative.  
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  

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ROHM

BD9B305QUZ

BD9B305QUZ是一款同步整流降压DC/DC转换器,内置低导通电阻功率MOSFET。可以输出高达3A的输出电流。采用固定导通时间控制方法,具有高速负载响应性能。采用轻负载模式控制方式,可提高轻负载时的效率,适用于需要降低待机时功耗的设备。具有电源良好输出功能,可实现系统的时序控制。采用小型封装,可实现高功率和减小安装面积。Power Supply Reference BoardFor Xilinx’s FPGA Spartan-7
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BD9B306NF-Z (开发中)

BD9B306NF-Z is one of the BD9Bx06NF-Z series of single synchronous buck DC/DC converter with built-in low on-resistance power MOSFETs. It can provide current up to 3A. The output voltage can achieve a high accuracy due to ±1% reference voltage. It features fast transient response due to constant on-time control system. The Light Load Mode control improves efficiency in light-load conditions. It is ideal for reducing standby power consumption of equipment. Power Good function makes it possible for system to control sequence. It achieves the high power density and offer a small footprint on the PCB by employing 6 pins 1.5mm x 1.5mm small package.
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