EMH1T2R [ROHM]

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT6, 6 PIN;
EMH1T2R
型号: EMH1T2R
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT6, 6 PIN

开关 光电二极管 晶体管
文件: 总3页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EMH1 / UMH1N / IMH1A  
Transistors  
General purpose (dual digital transistors)  
EMH1 / UMH1N / IMH1A  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two DTC124E chips in a EMT or UMT or SMT  
package.  
UMH1N  
1.25  
2.1  
zCircuit schematic  
EMH1 / UMH1N  
IMH1A  
0.1Min.  
(3)  
(2)  
(1)  
(4)  
(5)  
(6)  
R1  
R1  
R2  
R2  
ROHM  
EIAJ  
:
UMT6  
Each lead has same dimensions  
:
SC-88  
R2  
R2  
R1  
R1  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
IMH1A  
R1=  
R2=22KΩ  
R1=  
R2=22KΩ  
1.6  
2.8  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
0.3to0.6  
Supply voltage  
Input voltage  
VCC  
50  
40  
10  
30  
V
IN  
V
ROHM  
EIAJ  
:
SMT6  
Each lead has same dimensions  
:
SC-74  
Output current  
I
O
mA  
mA  
Collector current  
I
C(MAX)  
100  
EMH1 / UMH1N  
IMH1A  
150(TOTAL)  
300(TOTAL)  
150  
1  
2  
Power dissipation  
Pd  
mW  
EMH1  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
( )  
3
( )  
2
( )  
1
(
)
4
)
5
)
6
Tstg  
55 to +150  
(
(
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
1.2  
1.6  
zPackage, marking, and packaging specifications  
Type  
Package  
EMH1  
EMT5  
H1  
UMH1N  
UMT6  
H1  
IMH1A  
SMT6  
H1  
Each lead has same dimensions  
ROHM  
: EMT6  
Marking  
Code  
T2R  
TN  
T110  
3000  
Basic ordering unit (pieces)  
8000  
3000  
Rev.A  
1/2  
EMH1 / UMH1N / IMH1A  
Transistors  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
0.5  
Unit  
V
Conditions  
=100µA  
=5mA  
=0.5mA  
VI (off)  
V
CC=5V, I  
=0.2V, I  
=10mA, I  
=5V  
CC=50V, V  
=5V, I =5mA  
CE=10V, I  
O
Input voltage  
V
I (on)  
3
V
O
O
Output voltage  
V
O (on)  
0.1  
0.3  
0.36  
0.5  
V
mA  
µA  
MHz  
kΩ  
I
O
I
Input current  
I
I
V
V
V
V
I
Output current  
I
O (off)  
I
=0V  
DC current gain  
Transition frequency  
Input resistance  
Resistance ratio  
Characteristics of built-in transistor  
G
I
56  
O
O
f
T
250  
22  
1
E
= −5mA , f=100MHz  
R1  
15.4  
0.8  
28.6  
1.2  
R2 / R1  
zElectrical characteristics curves  
10m  
5m  
100  
1k  
V
O
=0.2V  
V
CC=5V  
VO=5V  
50  
500  
2m  
Ta=100°C  
25°C  
40°C  
20  
10  
Ta=100°C  
25°C  
40°C  
200  
100  
50  
1m  
500µ  
Ta=−40°C  
25°C  
100°C  
200µ  
100µ  
50µ  
5
20  
10  
2
1
20µ  
10µ  
5µ  
500m  
5
200m  
100m  
2
1
2µ  
1µ  
100µ 200µ 500µ 1m  
2m  
5m 10m 20m 50m 100m  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
100µ 200µ  
500µ 1m  
2m  
5m 10m 20m 50m 100m  
OUTPUT CURRENT : I (A)  
O
OUTPUT CURRENT : I  
O
(A)  
INPUT VOLTAGE : VI(off) (V)  
Fig.1 Input voltage vs. output current  
(ON characteristics)  
Fig.2 Output current vs. input voltage  
(OFF characteristics)  
Fig.3 DC current gain vs. output  
current  
1
lO/lI=20  
500m  
200m  
100m  
50m  
Ta=100°C  
25°C  
40°C  
20m  
10m  
5m  
2m  
1m  
100µ 200µ  
500µ 1m  
2m  
5m 10m 20m 50m 100m  
OUTPUT CURRENT : I (A)  
O
Fig.4 Output voltage vs. output  
current  
Rev.A  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

相关型号:

EMH1_0411

General purpose (dual digital transistors)
ROHM

EMH1_1

General purpose (dual digital transistors)
ROHM

EMH2

General purpose (dual digital transistors)
ROHM

EMH2

General purpose transistors (dual transistors)
HTSEMI

EMH2301

P-Channel Silicon MOSFET General-Purpose Switching Device
SANYO

EMH2302

P-Channel Silicon MOSFET General-Purpose Switching Device
SANYO

EMH2308

General-Purpose Switching Device Applications
SANYO

EMH2308-TL-E

P-Channel Power MOSFET, -20 V, -3 A, 85 mΩ, Dual EMH8, SOT-383FL / EMH8, 3000-REEL
ONSEMI

EMH2308-TL-H

P 沟道,功率 MOSFET,-20 V,-3 A,85mΩ,双 EMH8
ONSEMI

EMH2308_12

General-Purpose Switching Device Applications
SANYO

EMH2314

General-Purpose Switching Device Applications
SANYO

EMH2314-TL-H

Power MOSFET, -12V, 37mΩ, -5A, Dual P-Channel
ONSEMI