ES6U41_12 [ROHM]

2.5V Drive Nch+SBD MOSFET; 2.5V驱动N沟道+ SBD MOSFET


型号：	ES6U41_12
厂家：	ROHM
描述：	2.5V Drive Nch+SBD MOSFET 2.5V驱动N沟道+ SBD MOSFET 驱动
文件：	总5页 (文件大小：192K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2.5V Drive Nch+SBD MOSFET

ES6U41

Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET /

Schottky barrier diode

WEMT6

(6) (5) (4)

Features

1) Nch MOSFET and schottky barrier diode-

are put in WEMT6 package.

2) High-speed switching, Low On-resistance.

3) Low voltage drive (2.5V drive).

4) Built-in Low V^Fschottky barrier diode.

(1) (2) (3)

Abbreviated symbol : U41

Applications

Switching

Package specifications

Inner circuit

Package

Taping

T2R

(6)

(4)

(5)

Type

Code

Basic ordering unit (pieces)

8000

ES6U41

∗2

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

∗1

(1)

(2)

(3)

Absolute maximum ratings (Ta=25C)

∗1 ESD protection diode

∗2 Body diode

(6)Drain

Parameter

Drain-source voltage

Symbol

Limits

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

1.5

Drain current

∗1

I_DP

6.0

Source current

(Body diode)

Continuous

Pulsed

I_S

0.75

6.0

I_SP

°C

Channel temperature

Power dissipation

Tch

P_D

150

0.7

∗2

W / ELEMENT

∗1 Pw≤10μs, Duty cycle≤1%

∗2 Mounted on a ceramic board

<Di>

Parameter

Symbol

V_RM

V_R

Limits

Unit

Repetitive peak reverse voltage

Reverse voltage

0.5

2.0

I_F

Forward current

∗1

I_FSM

Forward current surge peak

Junction temperature

Power dissipation

°C

P_D

150

0.5

∗2

W / ELEMENT

∗1 60Hz 1cycle

∗2 Mounted on ceramic board

Parameter

Symbol

Limits

0.8

Unit

W / TOTAL

°C

∗

Power dissipation

P_D

Range of storage temperature

∗ Mounted on a ceramic board

Tstg

−55 to +150

www.rohm.com

2012.02 - Rev.B

1/4

ES6U41

Data Sheet

Electrical characteristics

Parameter

Symbol Min. Typ. Max.

Conditions

μA V_GS= 12V, V_DS=0V

Unit

Gate-source leakage

I_GSS

−

Drain-source breakdown voltage V_{(BR) DSS}30

μA

I_D= 1mA, V_GS=0V

Zero gate voltage drain current

Gate threshold voltage

I_DSS

−

0.5

−

1.5

−

V_DS= 30V, V_GS=0V

_DS= 10V, I_D= 1mA

V_{GS (th)}

1.5

240

250

340

−

2.2

−

170

180

240

−

mΩ I_D= 1.5A, V_GS= 4.5V

mΩ I_D= 1.5A, V_GS= 4V

mΩ I_D= 1.5A, V_GS= 2.5V

Static drain-source on-state

resistance

∗

R_{DS (on)}

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

_DS= 10V, I_D= 1.5A

_DS= 10V

C_oss

C_rss

t_{d (on)}

V_GS=0V

f=1MHz

∗

DD 15V

= 0.75A

GS= 4.5V

Turn-off delay time

Fall time

t_{d (off)}

20Ω

= 10Ω

∗

t_f

Total gate charge

Gate-source charge

Q_g

1.6

0.5

0.3

V_DD15V, V_GS= 4.5V

I_D= 1.5A, R_L10Ω

R_G= 10Ω

∗

Q_gs

Q_gd

Gate-drain charge

−

∗Pulsed

Parameter Symbol Min. Typ. Max.

Forward voltage 1.2

Unit

Conditions

−

I_S= 0.75A, V_GS=0V

<Di>

Parameter

Symbol Min. Typ. Max.

Conditions

I_F= 0.1A

Unit

−

0.36

0.52

100

Forward voltage

Reverse current

I_F= 0.5A

μA

V = 20V

www.rohm.com

2012.02 - Rev.B

2/4

ES6U41

Data Sheet

Electrical characteristics curves

1.5

V_GS= 10V

Ta=25°C

Pulsed

V_DS= 10V

Pulsed

V_GS= 10V

V_GS= 2.5V

V_GS= 2.2V

V_GS= 4.5V

V_GS= 4.0V

V_GS= 2.5V

1.5

V_GS= 1.8V

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

_GS= 2.2V

V_GS= 1.8V

V_GS= 1.7V

V_GS= 1.6V

0.1

V_GS= 1.7V

V_GS= 1.6V

0.5

0.01

0.001

Ta=25°C

Pulsed

V_GS= 1.5V

0.2

0.4

0.6

0.8

0.5

1.0

GATE-SOURCE VOLTAGE : V_GS[V]

Fig.3 Typical Transfer Characteristics

1.5

2.0

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.1 Typical Output Characteristics(

)

Ⅰ

Fig.2 Typical Output Characteristics( )

Ⅱ

1000

100

1000

100

1000

100

Ta=25°C

Pulsed

V_GS= 4.0V

Pulsed

V_GS= 4.5V

Pulsed

V_GS= 2.5V

V_GS= 4.0V

V_GS= 4.5V

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

0.01

0.1

0.01

0.1

0.01

0.1

DRAIN-CURRENT : I_D[A]

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.5 Static Drain-Source On-State

)

Ⅲ

)

Ⅰ

Resistance vs. Drain Current( )

Ⅱ

1000

100

V_DS= 10V

Pulsed

V_GS= 2.5V

Pulsed

V_GS=0V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

0.1

Ta= -25°C

Ta=25°C

Ta=75°C

Ta=125°C

0.1

0.01

0.1

0.01

0.1

0.2

0.4

0.6

0.8

1.0

1.2

DRAIN-CURRENT : I_D[A]

SOURCE-DRAIN VOLTAGE : V_SD[V]

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.8 Forward Transfer Admittance

vs. Drain Current

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

)

Ⅳ

www.rohm.com

2012.02 - Rev.B

3/4

ES6U41

Data Sheet

1000

100

Ta=25°C

Pulsed

Ta=25°C

_DD= 15V

800

600

400

200

V_GS= 4.5V

R_G=10Ω

Pulsed

t_d(off)

I_D= 1.50A

I_D= 0.75A

t_f

Ta=25°C

_DD= 15V

I_D= 1.5A

R_G=10Ω

Pulsed

t_r

t_d(on)

0.01

0.1

0.5

1.5

GATE-SOURCE VOLTAGE : V_GS[V]

Fig.10 Static Drain-Source On-State

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

DRAIN-CURRENT : I_D[A]

Fig.11 Switching Characteristics

Resistance vs. Gate Source Voltage

1000

100

Ciss

Crss

Coss

Ta=25°C

f=1MHz

_GS=0V

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

<Di>

100000

10000

1000

100

pulsed

Ta = 75

Ta = 25

℃

0.1

0.01

Ta = 75

Ta = 25

℃

Ta= - 25

℃

Ta= - 25

℃

0.1

0.01

0.001

0.1 0.2 0.3 0.4 0.5 0.6

FORWARD VOLTAGE : V [V]

Fig.2 Forward Current vs. Forward Voltage

REVERSE VOLTAGE : V

R[V]

Fig.1 Reverse Current vs. Reverse Voltage

www.rohm.com

2012.02 - Rev.B

4/4

Notice

N o t e s

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content speciﬁed herein is subject to change for improvement without notice.

The content speciﬁed herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the speciﬁcations,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products speciﬁed in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofﬁce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products speciﬁed in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

against the possibility of physical injury, ﬁre or any other damage caused in the event of the

failure of any Product, such as derating, redundancy, ﬁre control and fail-safe designs. ROHM

shall bear no responsibility whatsoever for your use of any Product outside of the prescribed

scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or

system which requires an extremely high level of reliability the failure or malfunction of which

may result in a direct threat to human life or create a risk of human injury (such as a medical

instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-

controller or other safety device). ROHM shall bear no responsibility in any way for use of any

of the Products for the above special purposes. If a Product is intended to be used for any

such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology speciﬁed herein that may

be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to

obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1120A

ES6U41_12 [ROHM]

相关型号：

ES6U42

ES6U42T2R

ES7

ES7010

ES7010F

ES7011

ES7011F

ES7020

ES7020BD

ES7020BDF

ES7020BF

ES71145