IMD6AT108 [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SMT6, SC-74, 6 PIN;型号: | IMD6AT108 |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SMT6, SC-74, 6 PIN 开关 光电二极管 晶体管 |
文件: | 总8页 (文件大小:468K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
EMD6 / UMD6N / IMD6A
Datasheet
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)
<For DTr1(NPN)>
lOutline
EMT6
UMT6
Parameter
VCEO
IC
Value
50V
(6)
(6)
(5)
(5)
(4)
(4)
(1)
(2)
(1)
(2)
100mA
4.7kW
(3)
(3)
R1
EMD6
(SC-107C)
UMD6N
SOT-353 (SC-88)
SMT6
<For DTr2(PNP)>
Parameter
(4)
(5)
Value
-50V
-100mA
4.7kW
(6)
(3)
VCEO
IC
(2)
(1)
IMD6A
R1
SOT-457 (SC-74)
lFeatures
lInner circuit
1) Both the DTC143T chip and DTA143T chip
in one package.
Collector
(6)
Base
(5)
Emitter
(4)
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
DTr1
DTr2
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
(1)
Emitter
(2)
Base
(3)
Collector
EMD6 / UMD6N
Collector
(4)
Base
(5)
Emitter
(6)
DTr2
DTr1
lApplication
Inverter circuit, Interface circuit, Driver circuit
(3)
Emitter
(2)
Base
(1)
Collector
IMD6A
lPackaging specifications
Package
size
(mm)
Basic
ordering
unit (pcs)
Taping
code
Reel size Tape width
Part No.
Package
Marking
(mm)
(mm)
EMD6
EMT6
UMT6
SMT6
1616
2021
2928
T2R
TR
180
180
180
8
8
8
8,000
3,000
3,000
D6
D6
D6
UMD6N
IMD6A
T108
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.B
1/7
Data Sheet
EMD6 / UMD6N / IMD6A
lAbsolute maximum ratings (Ta = 25C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
DTr1(NPN)
DTr2(PNP)
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
50
50
5
-50
-50
-5
V
V
Collector current
100
mA
mW
mW
°C
°C
-100
150 (Total)*3
300 (Total)*4
EMD6 / UMD6N
Collector Power dissipation
IMD6A
*2
PC
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
lElectrical characteristics(Ta = 25°C) <For DTr1(NPN)>
Parameter
Conditions
IC= 50mA
Min.
Typ.
Max.
-
Unit
V
Symbol
BVCBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
50
50
5
-
BVCEO IC= 1mA
-
-
BVEBO
ICBO
IE= 50mA
VCB = 50V
VEB = 4V
-
-
-
-
500
500
300
600
6.11
nA
nA
mV
-
IEBO
Emitter cut-off current
-
-
VCE(sat) IC / IB= 5mA / 0.25mA
Collector-emitter saturation voltage
DC current gain
-
-
hFE
R1
VCE= 5V, IC= 1mA
-
100
3.29
300
4.7
Input resistance
-
VCE = 10V, IE = -5mA
f = 100MHz
*1
Transition frequency
-
250
-
MHz
fT
lElectrical characteristics(Ta = 25°C) <For DTr2(PNP)>
Parameter
Conditions
IC= -50mA
Min.
-50
-50
-5
-
Typ.
Max.
-
Unit
V
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-
IC= -1mA
-
-
IE= -50mA
-
-
-
VCB = -50V
VEB = -4V
nA
nA
mV
-
-500
-500
-300
600
6.11
IEBO
Emitter cut-off current
-
-
VCE(sat)
hFE
Collector-emitter saturation voltage
DC current gain
IC / IB= -5mA / -0.25mA
VCE= -5V, IC= -1mA
-
-
-
100
3.29
300
4.7
R1
Input resistance
-
VCE = -10V, IE = 5mA
f = 100MHz
*1
Transition frequency
-
250
-
MHz
fT
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.B
2/7
Data Sheet
EMD6 / UMD6N / IMD6A
lElectrical characteristic curves(Ta = 25°C) <For DTr1(NPN)>
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
10
IB= 500μA
100
80
60
40
20
0
Ta=25ºC
450μA
400μA
350μA
300μA
VCE=5V
1
0.1
250μA
200μA
Ta=100ºC
25ºC
150μA
100μA
50μA
-40ºC
0.01
0.001
0A
10
0
5
0
0.5
1
1.5
2
COLLECTOR TO EMITTER
VOLTAGE : VCE [V]
BASE TO EMITTER VOLTAGE : VBE [V]
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
Fig.3 DC Current gain
vs. Collector Current
COLLECTOR CURRENT : IC [A]
COLLECTOR CURRENT : IC [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.B
3/7
Data Sheet
EMD6 / UMD6N / IMD6A
lElectrical characteristic curves(Ta = 25°C) <For DTr2(PNP)>
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
IB=
-10
-100
-80
-60
-40
-20
0
Ta=25ºC
-500μA
VCE= -5V
-450μA
-400μA
-350μA
-300μA
-1
-0.1
-250μA
-200μA
-150μA
Ta=100ºC
25ºC
-40ºC
-0.01
-0.001
-100μA
-50μA
0A
0
-2
-4
-6
-8
-10
0
-0.5
-1
-1.5
-2
COLLECTOR TO EMITTER
VOLTAGE : VCE [V]
BASE TO EMITTER VOLTAGE : VBE [V]
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
Fig.3 DC Current gain
vs. Collector Current
COLLECTOR CURRENT : IC [A]
COLLECTOR CURRENT : IC [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.B
4/7
Data Sheet
EMD6 / UMD6N / IMD6A
lDimensions (Unit : mm)
D
A
b
EMT6
c
x
S A
e
y
S
S
b2
e
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MILIMETERS
MIN
INCHES
DIM
MAX
0.55
0.10
0.27
0.18
1.70
1.30
MIN
MAX
0.022
0.004
0.011
0.007
0.067
0.051
A
A1
b
0.45
0.00
0.17
0.08
1.50
1.10
0.018
0.000
0.007
0.003
0.059
0.043
c
D
E
e
0.50
0.020
HE
L
1.50
0.10
-
1.70
0.30
0.35
0.10
0.10
0.059
0.004
0.067
0.012
0.014
0.004
0.004
Lp
x
-
-
-
-
y
-
MILIMETERS
INCHES
0.049
DIM
MIN
-
MAX
0.37
MIN
-
MAX
0.015
b2
e1
l1
1.25
-
0.45
-
0.018
Dimension in mm / inches
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.B
5/7
Data Sheet
EMD6 / UMD6N / IMD6A
lDimensions (Unit : mm)
D
A
c
UMT6
e
Q
A3
b
x
S A
e
y
S
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MILIMETERS
INCHES
DIM
MIN
0.80
0.00
MAX
1.00
0.10
MIN
0.031
0.000
MAX
0.039
0.004
A
A1
A3
b
c
D
0.25
0.65
0.010
0.026
0.15
0.10
1.90
1.15
0.30
0.20
2.10
1.35
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
E
e
HE
L1
Lp
Q
x
2.00
0.20
0.25
0.10
-
2.20
0.50
0.55
0.30
0.10
0.10
0.079
0.008
0.010
0.004
-
0.087
0.020
0.022
0.012
0.004
0.004
y
-
-
MILIMETERS
INCHES
0.061
DIM
MIN
-
MAX
0.40
MIN
-
MAX
0.016
b2
e1
l1
1.55
-
0.65
-
0.026
Dimension in mm / inches
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.B
6/7
Data Sheet
EMD6 / UMD6N / IMD6A
lDimensions (Unit : mm)
D
A
e
SMT6
c
Q
A3
b
x
S A
e
y
S
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MILIMETERS
INCHES
DIM
MIN
1.00
0.00
MAX
1.30
0.10
MIN
0.039
0.000
MAX
0.051
0.004
A
A1
A3
b
0.25
0.95
0.010
0.037
0.25
0.09
2.80
1.50
0.40
0.25
3.00
1.80
0.010
0.004
0.110
0.059
0.016
0.010
0.118
0.071
c
D
E
e
HE
L1
Lp
Q
x
2.60
0.30
0.40
0.20
-
3.00
0.60
0.70
0.30
0.20
0.10
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.008
0.004
y
-
-
MILIMETERS
MAX
0.60
INCHES
0.083
DIM
MIN
MIN
-
MAX
0.024
b2
e1
l1
2.10
-
0.90
-
0.035
Dimension in mm / inches
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.B
7/7
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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© 2013 ROHM Co., Ltd. All rights reserved.
R1102
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