RB055L-40 [ROHM]

Schottky barrier diode; 肖特基二极管
RB055L-40
型号: RB055L-40
厂家: ROHM    ROHM
描述:

Schottky barrier diode
肖特基二极管

整流二极管 肖特基二极管
文件: 总4页 (文件大小:168K)
中文:  中文翻译
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RB055L-40  
Diodes  
Schottky barrier diode  
RB055L-40  
zApplications  
zExternal dimensions (Unit : mm)  
zLand size figure (Unit : mm)  
General rectification  
2.0  
2.6±0.2  
zFeatures  
1) Small power mold type  
(PMDS)  
5
2
2) Low I  
R
0.1±0.02  
ꢀꢀꢀ 0.1  
3) High reliability  
PMDS  
2.0±0.2  
1.5±0.2  
zStructure  
zStructure  
Silicon epitaxial planar  
ROHM : PMDS  
JEDEC : SOD-106  
Manufacture Date  
zTaping dimensions (Unit : mm)  
2.0±0.05  
4.0±0.1  
0.3  
φ1.55±0.05  
φ1.55  
2.9±0.1  
4.0±0.1  
2.8MAX  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
Symbol  
VRM  
VR  
Unit  
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
40  
40  
V
Average rectified forward current  
Forward current surge peak 60Hz1cyc)  
Junction temperature  
3
40  
150  
Io  
IFSM  
Tj  
A
A
Storage temperature  
-40 to +150  
Tstg  
(*1) Mounted on epoxy board. 180°Half sine wave  
zElectrical characteristic (Ta=25°C)  
Parameter  
Forward voltagae  
Reverse current  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
0.65  
0.5  
Unit  
V
VF  
IR  
-
-
-
-
IF=3.0A  
VR=40V  
mA  
1/3  
RB055L-40  
Diodes  
zElectrical characteristic curves  
Ta=150℃  
Ta=125℃  
10000  
1000  
100  
10  
10000  
1000  
100  
10  
f=1MHz  
Ta=150℃  
1000  
Ta=75℃  
Ta=125℃  
Ta=75℃  
Ta=-25℃  
100  
10  
1
Ta=25℃  
Ta=25℃  
1
Ta=-25℃  
0.1  
0.01  
0.001  
0.1  
1
0
100 200 300 400 500 600 700  
0
10  
20  
30  
0
10  
20  
30  
40  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
FORWARD VOLTAGE:VF(mV)  
VF-IF CHARACTERISTICS  
REVERSE VOLTAGE:VR(V)  
VR-IR CHARACTERISTICS  
400  
390  
380  
370  
360  
350  
340  
330  
320  
310  
300  
580  
570  
560  
550  
540  
530  
100  
Ta=25℃  
f=1MHz  
VR=0V  
Ta=25℃  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Ta=25℃  
IF=3A  
n=30pcs  
VR=40V  
n=30pcs  
n=10pcs  
AVE:559.6mV  
AVE:6.62uA  
AVE:329.5pF  
VF DISPERSION MAP  
IR DISPERSION MAP  
Ct DISPERSION MAP  
30  
1000  
100  
10  
300  
250  
200  
150  
100  
50  
Ta=25℃  
IF=0.5A  
IR=1A  
Irr=0.25*IR  
n=10pcs  
Ifsm  
25  
20  
15  
10  
5
1cyc  
Ifsm  
8.3ms 8.3ms  
1cyc  
8.3ms  
AVE:8.20ns  
AVE:117.2A  
0
0
1
10  
100  
NUMBER OF CYCLES  
trr DISPERSION MAP  
IFSM DISRESION MAP  
IFSM-CYCLE CHARACTERISTICS  
Io-PfꢀCHARACTERISTICS  
5
250  
1000  
100  
10  
4.5  
4
Mounted on epoxy board  
Rth(j-a)  
Ifsm  
200  
150  
100  
50  
t
3.5  
3
DC  
D=1/2  
Rth(j-c)  
IF=1A  
2.5  
2
Sin(θ=180)  
IM=100mA  
1.5  
1
1
1ms time  
300us  
0.5  
0
0
0.1  
1
10  
100  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0.001 0.01  
0.1  
1
10  
100 1000  
AVERAGE RECTIFIED  
TIME:t(ms)  
IFSM-t CHARACTERISTICS  
TIME:t(s)  
Rth-t CHARACTERISTICS  
FORWARD CURRENT:Io(A)  
Io-Pf CHARACTERISTICS  
2/3  
RB055L-40  
Diodes  
5
4.5  
4
5
4.5  
4
0.5  
0.4  
0.3  
0.2  
0.1  
Io  
0A  
0V  
DC  
VR  
D=1/2  
t
D=t/T  
VR=20V  
Tj=150℃  
3.5  
3
3.5  
3
Sin(θ=180)  
DC  
T
2.5  
2
2.5  
2
D=1/2  
DC  
D=1/2  
Io  
0A  
0V  
1.5  
1
1.5  
1
VR  
Sin(θ=180)  
Sin(θ=180)  
t
D=t/T  
VR=20V  
Tj=150℃  
0.5  
0
0.5  
0
T
0
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
10  
20  
30  
40  
REVERSE VOLTAGE:VR(V)  
VR-PR CHARACTERISTICS  
AMBIENT TEMPERATURE:Ta(℃)  
Derating Curve゙(Io-Ta)  
CASE TEMPARATURE:Tc(℃)  
Derating Curve゙(Io-Tc)  
30  
25  
20  
15  
10  
5
No break at 30kV  
AVE:12.8kV  
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
0
ESD DISPERSION MAP  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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