RB095B-30 [ROHM]
Schottky barrier diode; 肖特基二极管型号: | RB095B-30 |
厂家: | ROHM |
描述: | Schottky barrier diode |
文件: | 总4页 (文件大小:255K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RB095B-30
Diodes
Schottky barrier diode
RB095B-30
zApplications
General rectification
zExternal dimensions (Unit : mm)
zLand size figure
6.5±0.2
5.1±0.2
ꢀꢀꢀ 0.1
2.3±0.2
ꢀꢀꢀ 0.1
6.0
0.5±0.1
0.05
zFeatures
1) Power mold type. (CPD)
①
1.6
1.6
1.5
1.2
0.8
0.75
2) Low V
F
0.9
(2)
0.65±0.1
(3)
0.55±0.1
ꢀꢀꢀꢀ 0.55
1.2±0.2
(1)
3) High reliability
2.3±0.2 2.3±0.2
2.2
CPD
2.3 2.3
0.5
2.0
2-R0.3
zConstruction
zStructure
R0.45
(1)
(2)
(3)
Silicon epitaxial planar
ROHM : CPD
JEITA : SC-63
0.5
0.95
24.5
①
Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
φ1.55±0.1
0
4.0±0.1
8.0±0.1
ꢀꢀꢀꢀꢀ
0.4±0.1
φ3.0±0.1
6.8±0.1
8.0±0.1
2.7±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Limits
Symbol
VRM
VR
Unit
V
35
30
V
Average rectified forward current *1
6
35
(
)
Io
A
Forward current surge peak 60Hz 1cyc *1
)( )
IFSM
Tj
A
(
・
Junction temperature
Storage temperature
150
℃
℃
-40 to +150
Tstg
(*1) Per chip : Io/2
zElectrical characteristic (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
Forward voltage
VF
IR
-
-
-
-
-
-
0.425
200
IF=3.0A
VR=30V
junction to case
Reverse current
µA
θjc
/W
Thermal impedance
6.0
℃
Rev.A
1/3
RB095B-30
Diodes
zElectrical characteristic curves
Ta=150℃
Ta=125℃
10
10000
1000
100
1000000
100000
10000
1000
100
Ta=150℃
f=1MHz
Ta=125℃
Ta=25℃
Ta=75℃
1
Ta=75℃
Ta=-25℃
Ta=25℃
10
0.1
Ta=-25℃
1
0.1
0.01
10
0.01
0
100 200 300 400 500 600 700
0
10
20
30
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
440
430
420
410
400
390
2000
1950
1900
1850
1800
1750
1700
1650
1600
1550
1500
200
180
160
140
120
100
80
Ta=25℃
IF=3A
n=30pcs
Ta=25℃
Ta=25℃
VR=30V
n=30pcs
f=1MHz
VR=0V
n=10pcs
AVE:402.0mV
AVE:41.0uA
AVE:1617.3pF
60
40
20
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
30
25
20
15
10
5
300
250
200
150
100
50
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
1cyc
Ifsm
8.3ms 8.3ms
1cyc
8.3ms
AVE:19.3ns
AVE:63.0A
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
IFSM DISRESION MAP
Mounted on epoxy board
IM=100mA
IF=3A
100
10
1
5
1000
100
10
1ms time
300us
Rth(j-a)
Rth(j-c)
4
3
2
1
0
D=1/2
Ifsm
DC
t
Sin(θ=180)
0.1
0.001
0.1
10
1000
1
10
100
0
5
10
15
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Rev.A
2/3
RB095B-30
Diodes
20
15
10
5
20
15
10
5
10
8
Io
Io
0A
0V
0A
0V
VR
VR
Sin(θ=180)
t
t
D=t/T
VR=15V
Tj=150℃
D=t/T
VR=15V
Tj=150℃
T
6
T
DC
DC
D=1/2
D=1/2
4
D=1/2
DC
2
Sin(θ=180)
Sin(θ=180)
0
0
0
0
10
20
30
0
25
50
75
100
125
150
0
25
50
75
100
125
150
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
30
25
20
15
10
5
No break at 30kV No break at 30kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号:
RB095B-30FH
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 35V V(RRM), Silicon, SC-63, 3/2 PIN
ROHM
RB095B-40FH
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 45V V(RRM), Silicon, SC-63, 3/2 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明