RB876WTL [ROHM]
Rectifier Diode, Schottky, 2 Element, 0.01A, 5V V(RRM), Silicon, SC-75A, 3 PIN;![RB876WTL](http://pdffile.icpdf.com/pdf1/p00178/img/icpdf/RB876_1001366_icpdf.jpg)
型号: | RB876WTL |
厂家: | ![]() |
描述: | Rectifier Diode, Schottky, 2 Element, 0.01A, 5V V(RRM), Silicon, SC-75A, 3 PIN 二极管 |
文件: | 总3页 (文件大小:963K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Data Sheet
Shottky barrier diode
RB876W
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
High frequency detection
1.0
0.5
0.5
1.6±0.2
0.3±0.1
0.15±0.05
ꢀꢀꢀ 0.05
Features
(3)
0.7
1) Ultra small mold type. (EMD3)
2) Low Ct and high detection efficiency.
0~0.1
0.6
0.6
EMD3
(1)
(2)
0.5
0.2±0.1
ꢀꢀ-0.05
0.55±0.1
0.7±0.1
0.5
1.0±0.1
Construction
Structure
Silicon epitaxial planar
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications (Unit : mm)
φ1.5 0.1
2.0±0.05
0.3±0.1
4.0±0.1
0
1.8±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
5
Symbol
Unit
V
Reverse voltage
VR
Io
Average rectified forward current (*1)
Junction temperature
10
mA
°C
125
Tj
Storage temperature
40 to 125
Tstg
°C
(*1) Rating of per diode
Electrical characteristics (Ta=25°C)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
0.35
120
Unit
V
Forward voltage
VF
IR
-
-
-
-
-
IF=1mA
Reverse current
μA
pF
VR=5V
Capacitance between terminals
VR=1V, f=1MHz
Ct
0.53
0.80
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2011.04 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
1/2
Data Sheet
RB876W
10
1
1
1000
100
10
f=1MHz
Ta=125℃
Ta=75℃
Ta=-25℃
Ta=25℃
Ta=25℃
0.1
Ta=75℃
Ta=-25℃
Ta=125℃
0.1
0.01
0
1
0
1
2
3
4
5
300
600
900
1200
1500
0
1
2
3
4
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
1
300
290
280
270
260
250
300
Ta=25℃
Ta=25℃
VR=5V
n=30pcs
Ta=25℃
IF=1mA
n=30pcs
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
f=1MHz
VR=1V
n=10pcs
250
200
150
100
50
AVE:0.520pF
AVE:21.63uA
AVE:275.2mV
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
5
1000
Rth(j-a)
Rth(j-c)
4
3
2
1
0
AVE:1.47kV
Mounted on epoxy board
100
IM=1mA
IF=10mA
AVE:0.48kV
time
1ms
300us
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
10
0.001 0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.04 - Rev.B
Notice
N o t e s
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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