RFUS20TM4S_11 [ROHM]
Super Fast Recovery Diode; 超快速恢复二极管
| 型号： | RFUS20TM4S_11 |
| 厂家： | 
ROHM |
| 描述： | Super Fast Recovery Diode |
| 文件： | 总4页 (文件大小：987K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Super Fast Recovery Diode
RFUS20TM4S
Series
Dimensions (Unit : mm)
Structure
+0.3
−0.1
+0.3
−0.1
Ultra Fast Recovery
+0.2
−0.1
(1) (2) (3)
Applications
General rectification
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
+0.1
−0.05
Construction
Silicon epitaxial planer
Absolute maximum ratings (Tc=25C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Conditions
Limits
430
Unit
V
Symbol
VRM
Duty0.5
Direct voltage
430
V
VR
60Hz half sin wave, Resistance load,
Average rectified forward current
Forward current surge peak
Io
20
A
A
Tc=68C
60Hz half sin wave, Non-repetitive
IFSM
100
one cycle peak value, Tj=25 C
Junction temperature
Storage temperature
150
Tj
C
C
55 to 150
Tstg
Electrical characteristics (Tj=25C)
Parameter
Conditions
IF=20A
Min.
Typ.
1.4
0.05
24
Max.
1.6
10
Symbol
VF
Unit
V
-
-
-
-
Forward voltage
Reverse current
VR=430V
IR
μA
Reverse recovery time
Thermal resistance
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
35
trr
ns
-
2
Rth(j-c)
C/W
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2011.06 - Rev.A
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1/3
Data Sheet
RFUS20TM4S
ꢀ
Electrical characteristic curves
100
100000
10000
1000
100
1000
100
10
Tj=150C
f=1MHz
Tj=125C
Tj=25C
Tj=150C
10
Tj=125C
Tj=25C
Tj=75C
Tj=75C
Tj=25C
1
10
1
0.1
0
50 100 150 200 250 300 350 400 450
0
500
1000
1500
2000
2500
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
400
390
380
370
360
350
1500
1000
100
10
Ta=25C
f=1MHz
VR=0V
Tｊ=25C
IF=20A
Tｊ=25C
VR=430V
n=20pcs
1450
1400
1350
1300
1250
1200
n=20pcs
n=10pcs
AVE : 49.0nA
AVE : 1373mV
AVE : 372.3pF
1
IR DISPERSION MAP
Ct DISPERSION MAP
V
F DISPERSION MAP
1000
100
10
30
25
20
15
10
5
300
250
200
150
100
50
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
AVE : 22.9ns
AVE : 183A
IFSM
1cyc
IFSM
8.3ms 8.3ms
1cyc.
8.3ms
1
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
I
FSM DISRESION MAP
7
6
5
4
3
2
1
0
10
1000
100
10
IFSM
AVE : 6.05kV
time
Rth(j-c)
1
AVE : 0.93kV
0.1
C=200pF
C=100pF
0.001
0.01
0.1
1
10
100
1000
1
10
100
R=0
R=1.5k
TIME : t(ms)
TIME : t(s)
ESD DISPERSION MAP
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
Data Sheet
RFUS20TM4S
ꢀ
70
60
50
35
30
25
20
15
10
5
0A
Io
D.C.
0V
VR
t
D=0.8
D.C.
D=t/T
VR=350V
Tj=150C
T
D=0.8
D=0.5
D=0.5
half sin wave
40
30
20
10
0
D=0.2
D=0.1
half sin wave
D=0.2
D=0.05
D=0.1
D=0.05
0
0
5
10
15
20
25
30
35
0
30
60
90
120
150
CASE TEMPARATURE : Tc(C)
AVERAGE RECTIFIED
Derating Curve"(Io-Tc)
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
Notice
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R1120A
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