RP1E070XN [ROHM]

4V Drive Nch MOSFET; 4V驱动N沟道MOSFET


型号：	RP1E070XN
厂家：	ROHM
描述：	4V Drive Nch MOSFET 4V驱动N沟道MOSFET 驱动
文件：	总7页 (文件大小：1122K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet

4V Drive Nch MOSFET

RP1E070XN

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

MPT6

(Single)

(6)

(1)

(5)

(2)

(4)

(3)

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (MPT6).

 Application

Switching

 Packaging specifications

 Inner circuit

(6)

(5)

(4)

Package

Taping

Type

Code

Basic ordering unit (pieces)

1000



RP1E070XN

∗2

(1) Source

(2) Source

(3) Gate

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

(4) Drain

(5) Drain

(6) Drain

(1)

(2)

(3)

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Drain-source voltage

20

Gate-source voltage

Continuous

7

Drain current

Pulsed

I_DP

18

Continuous

Pulsed

I_S

1.6

Source current

(Body Diode)

I_SP

Power dissipation

P_D

2.0

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to 150

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

62.5

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

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Data Sheet

RP1E070XN

ꢀ

 Electrical characteristics (Ta = 25C)

Parameter

Symbol

I_GSS

Min.

Typ.

Max.

Unit

A V_GS=20V, V_DS=0V

I_D=1mA, V_GS=0V

A V_DS=30V, V_GS=0V

Conditions

Gate-source leakage

10

Drain-source breakdown voltage V_(BR)DSS

2.5

Zero gate voltage drain current

Gate threshold voltage

I_DSS

V_{GS (th)}

1.0

V_DS=10V, I_D=1mA

I_D=7A, V_GS=10V

I_D=7A, V_GS=4.5V

I_D=7A, V_GS=4.0V

I_D=7A, V_DS=10V

Static drain-source on-state

resistance

R_{DS (on)}

m

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

l Y_fsl

4.5

C_iss

C_oss

C_rss

t_d(on)

t_r

390

150

pF V_DS=10V

pF V_GS=0V

pF f=1MHz

ns I_D=3.5A, V_DD15V

ns V_GS=10V

ns R_L=4.3

ns R_G=10

nC I_D=7A, V_DD15V

nC V_GS=5V

Turn-off delay time

Fall time

t_d(off)

t_f

Total gate charge

Gate-source charge

Gate-drain charge

Q_g

5.8

1.5

2.3

Q_gs

Q_gd

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage

Symbol

Min.

Typ.

Max. Unit

1.2

Conditions

V_SD

I_s=7A, V_GS=0V

*Pulsed

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2011.02 - Rev.A

Data Sheet

RP1E070XN

ꢀ

Electrical characteristic curves (Ta=25C)

Fig.2 Typical Output Characteristics(Ⅱ)

Ta=25°C

Fig.1 Typical Output Characteristics(Ⅰ)

Ta=25°C

Pulsed

V_GS= 10V

V_GS= 4.5V

V_GS= 4.0V

V_GS= 10V

V_GS= 4.5V

V_GS= 4.0V

V_GS= 2.8V

V_GS= 2.5V

0.2

0.4

0.6

0.8

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.4 Static Drain-Source On-State

Fig.3 Typical Transfer Characteristics

Resistance vs. Drain Current(Ⅰ)

1000

V_DS= 10V

Pulsed

Ta=25°C

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

100

0.1

V_GS= 4.0V

V_GS= 4.5V

V_GS= 10V

0.01

0.001

0.1

GATE-SOURCE VOLTAGE : V_GS[V]

DRAIN-CURRENT : I_D[A]

Fig.6 Static Drain-Source On-State

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅲ)

Resistance vs. Drain Current(Ⅱ)

1000

100

1000

100

V_GS= 10V

Pulsed

V_GS= 4.5V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0.1

DRAIN-CURRENT : I_D[A]

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Data Sheet

RP1E070XN

ꢀ

Fig.8 Forward Transfer Admittance

vs. Drain Current

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

1000

100

V_GS= 4.0V

Pulsed

V_DS= 10V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

100

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0.1

1.5

0.01

0.1

DRAIN-CURRENT : I_D[A]

Fig.10 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

I_D= 3.5A

V_GS=0V

Pulsed

Ta=25°C

Pulsed

I_D= 7.0A

Ta=125°C

0.1

0.01

Ta=75°C

Ta=25°C

Ta=-25°C

0.5

SOURCE-DRAIN VOLTAGE : V_SD[V]

GATE-SOURCE VOLTAGE : V_GS[V]

Fig.12 Dynamic Input Characteristics

Fig.11 Switching Characteristics

1000

100

Ta=25°C

V_DD= 15V

V_GS=10V

R_G=10Ω

t_d(off)

t_f

Pulsed

t_d(on)

Ta=25°C

V_DD= 15V

I_D= 7A

Pulsed

t_r

0.01

0.1

DRAIN-CURRENT : I_D[A]

TOTAL GATE CHARGE : Qg [nC]

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2011.02 - Rev.A

Data Sheet

RP1E070XN

ꢀ

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

Fig.14 Maximum Safe Operating Aera

10000

1000

100

Operation in this area is limited by R_DS(ON)

(V_GS=10V)

C_iss

P_W=100us

C_rss

P_W=1ms

100

C_oss

P_W= 10ms

Ta=25°C

Single Pulse

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

0.1

0.01

Ta=25°C

f=1MHz

V_GS=0V

DC operation

100

0.01

0.1

100

0.1

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

Ta=25°C

Single Pulse

0.1

0.01

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

Rth_(ch-a)=62.5°C/W

Rth_(ch-a)(t)=r(t)×Rth_(ch-a)

0.001

0.0001

0.001

0.01

0.1

100

1000

PULSE WIDTH : Pw(s)

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Data Sheet

RP1E070XN

ꢀ

 Measurement circuits

Pulse width

90%

VGS

VDS

50%

10%

50%

10%

90%

D.U.T.

90%

d(on)

td(off)

toff

Fig.1-2ꢀSwitching Waveforms

Fig.1-1 Switching Time Measurement Circuit

VDS

D.U.T.

G(Const.)

Qgd

VDD

Charge

Fig.2-2 Gate Charge Waveform

Fig.2-1 Gate Charge Measurement Circuit

 Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design

ESD protection circuit.

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2011.02 - Rev.A

Notice

N o t e s

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1120A

RP1E070XN [ROHM]

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