RTL020P02TR [ROHM]
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN;
| 型号： | RTL020P02TR |
| 厂家： | 
ROHM |
| 描述： | Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RTL020P02
Transistors
DC-DC Converter (−20V, −2.0A)
RTL020P02
zExternal dimensions (Unit : mm)
zFeatures
1) Low on-resistance. (80mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
TUMT6
2.0±0.1
0.85MAX
+0.1
0.3
0.77±0.05
−0.05
(6)
(5)
(4)
0~0.1
(1)
(2)
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
zApplications
DC-DC converter
0.65 0.65
0.17±0.05
Each lead has same dimensions
1pin mark
1.3±0.1
Abbreviated symbol : WU
zEquivalent circuit
zStructure
Silicon P-channel
MOS FET
(6)
(5)
(4)
2
zPackaging specifications
1
Package
Taping
Type
Code
TR
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
Basic ordering unit (pieces)
3000
(1)
(2)
(3)
RTL020P02
1 ESD PROTECTION DIODE
2 BODY DIODE
1/4
RTL020P02
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
Unit
V
−20
±12
V
Continuous
±2
±8
A
Drain current
Pulsed
1
1
IDP
A
Source current
(Body diode)
Continuous
IS
−0.8
A
Pulsed
ISP
−3.2
A
2
Total power dissipation
Channel temperature
PD
1
W
°C
°C
Tch
Tstg
150
Range of Storage temperature
−55 to +150
1 Pw≤10µs, Duty cycle≤1%
2 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS=±12V, VDS=0V
Unit
Gate-source leakage
IGSS
−
−
−
±10
−
Drain-source breakdown voltage V(BR) DSS −20
V
µA
V
ID= −1mA, VGS=0V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
−
−1
−2.0
135
150
250
−
VDS= −20V, VGS=0V
DS= −10V, ID= −1mA
VGS (th) −0.7
−
V
−
100
110
180
−
mΩ ID= −2A, VGS= −4.5V
mΩ ID= −2A, VGS= −4V
mΩ ID= −1A, VGS= −2.5V
Static drain-source on-state
resistance
RDS (on)
−
−
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
1.2
−
S
V
V
V
DS= −10V, ID= −1A
430
80
55
11
13
38
12
4.9
1.2
1.3
−
pF
pF
pF
ns
ns
ns
ns
DS= −10V
Coss
Crss
td (on)
−
−
GS=0V
−
−
f=1MHz
−
−
I
D
= −1A
DD −15V
V
V
R
t
r
−
−
GS= −4.5V
=15Ω
GS=10Ω
Turn-off delay time
Fall time
td (off)
tf
−
−
L
−
−
R
Total gate charge
Gate-source charge
Qg
−
−
nC VDD −15V
nC GS= −4.5V
nC ID= −2A
R
L
7.5Ω
Qgs
Qgd
−
−
V
RGS=10Ω
Gate-drain charge
−
−
Pulsed
Body diode characteristics (source-drain characteristics)
Forward voltage VSD
−
−
−1.2
V
IS= −0.8A, VGS=0V
2/4
RTL020P02
Transistors
zElectrical characteristic curves
10
1000
100
10
1000
100
10
V
DS= −10V
VGS
Pulsed
= −4.5V
Ta=25°C
Pulsed
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
V
V
V
GS= −2.5V
GS= −4.0V
GS= −4.5V
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.01
0.001
0.1
1
10
0.01
0.1
1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.1 Typical Transfer Characteristics
1000
100
10
1000
100
10
10
VGS
Pulsed
=
−
4V
VGS
Pulsed
=
−
2.5V
V
GS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.01
0.1
1
10
0.1
1
10
0.0
0.5
1.0
1.5
2.0
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
8
10000
10000
Ta=25°C
Ta=25°C
f=1MHz
Ta=25°C
V
V
DD= −15V
GS= −4.5A
V
DD= −15V
ID= −2A
G=10Ω
Pulsed
7
6
5
4
3
2
1
0
V
GS=0V
RG=10Ω
R
1000
100
10
Pulsed
1000
100
10
t
f
Ciss
t
d (off)
t
d (on)
C
oss
rss
C
t
r
1
0.01
0.1
1
10
100
0.01
0.1
1
10
0
1
2
3
4
5
6
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
3/4
RTL020P02
Transistors
zMeasurement circuits
Pulse Width
V
GS
ID
VGS
10%
50%
V
DS
50%
90%
RL
10%
90%
10%
90%
D.U.T.
RG
V
DD
V
DS td(on)
td(off)
t
r
tf
t
on
toff
Fig.11 Switching Waveforms
Fig.10 Switching Time Measurement Circuit
V
G
V
GS
ID
V
DS
Qg
RL
V
GS
I
G(Const)
D.U.T.
Qgs
Qgd
RG
V
DD
Charge
Fig.12 Gate Charge Measurement Circuit
Fig.13 Gate Charge Waveforms
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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