RW1A020ZP [ROHM]

1.5V Drive Pch MOSFET; 1.5V驱动P沟道MOSFET


型号：	RW1A020ZP
厂家：	ROHM
描述：	1.5V Drive Pch MOSFET 1.5V驱动P沟道MOSFET 驱动
文件：	总5页 (文件大小：225K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1.5V Drive Pch MOSFET

RW1A020ZP

zStructure

zDimensions (Unit : mm)

WEMT6

Silicon P-channel MOSFET

(6) (5) (4)

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

(1) (2) (3)

Abbreviated symbol : ZE

zApplications

zInner circuit

Switching

(6)

(5)

(4)

∗2

zPackaging specifications

Package

Taping

T2R

∗1

Type

Code

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

Basic ordering unit (pieces)

8000

RW1A020ZP

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Symbol

Limits

Unit

V_DSS

V_GSS

I_D

−12

Gate-source voltage

Continuous

Pulsed

Drain current

∗1

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.5

−6

0.7

∗1

∗2

I_SP

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

150

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 When mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Rth(ch-a) ^∗

Limits

179

Unit

Channel to ambient

∗ When mounted on a ceramic board.

°C / W

www.rohm.com

2009.05 - Rev.A

1/4

RW1A020ZP

Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

µA V_GS= 10V, V_DS=0V

Unit

Gate-source leakage

I_GSS

−

Drain-source breakdown voltage V_{(BR) DSS}−12

Zero gate voltage drain current

µA

I_D= −1mA, V_GS=0V

I_DSS

−

−1

−1.0

105

145

225

400

−

V_DS= −12V, V_GS=0V

_DS= −6V, I_D= −1mA

Gate threshold voltage

V_{GS (th)}−0.3

−

105

150

200

−

770

6.5

1.3

0.8

mΩ I_D= −2A, V_GS= −4.5V

mΩ I_D= −1A, V_GS= −2.5V

mΩ I_D= −1A, V_GS= −1.8V

mΩ I_D= −0.4A, V_GS= −1.5V

∗

−

Static drain-source on-state

resistance

R_{DS (on)}

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

V_DS= −6V, I_D= −2A

V_DS= −6V

C_oss

C_rss

t_{d (on)}

V_GS=0V

f=1MHz

∗

DD −6V

= −1A

GS= −4.5V

Turn-off delay time

Fall time

t_{d (off)}

t_f

6Ω

=10Ω

Total gate charge

Gate-source charge

Q_g

nC V_DD−6V

3Ω

I_D= −2A

_GS= −4.5V

Q_gs

Q_gd

=10Ω

Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter

Forward voltage

Symbol Min. Typ. Max.

Conditions

I_S= −2A, V_GS=0V

Unit

∗

−

−1.2

∗Pulsed

www.rohm.com

2009.05 - Rev.A

2/4

RW1A020ZP

Data Sheet

zElectrical characteristics curves

ｗ

3.5

Ta=25°C

Pulsed

Ta=25°C

Pulsed

V_DS= -6V

Pulsed

-10V

-4.5V

-1.8V

-2.5V

2.5

-4.5V

-2.5V

-1.8V

0.1

-1.5V

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

1.5

-1.6V

V_GS= -1.2V

0.01

0.001

V_GS= -1.5V

0.5

1.5

0.2

0.4

0.6

0.8

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.2 Typical Output Characteristics(

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.3 Typical Transfer Characteristics

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.1 Typical Output Characteristics(

)

Ⅱ

Ⅰ

1000

100

1000

100

Ta=25°C

Pulsed

V_GS= -2.5V

Pulsed

V_GS= -4.5V

Pulsed

V_GS= -1.5V

V_GS= -1.8V

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

V_GS= -2.5V

V_GS= -4.5V

100

0.1

DRAIN-CURRENT : -I_D[A]

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(

)

Ⅲ

Ⅰ

Ⅱ

1000

100

1000

100

V_GS= -1.5V

Pulsed

V_DS= -6V

Pulsed

V_GS= -1.8V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=25°C

Ta=75°C

Ta=125°C

0.1

0.01

0.1

0.01

0.1

DRAIN-CURRENT : -I_D[A]

Fig.7 Static Drain-Source On-State

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.9 Forward Transfer Admittance

vs. Drain Current

Resistance vs. Drain Current(

)

Ⅳ

)

Ⅴ

www.rohm.com

2009.05 - Rev.A

3/4

RW1A020ZP

Data Sheet

500

400

300

200

100

1000

100

Ta=25°C

Pulsed

Ta=25°C V_DD= -6V

_GS=-4.5V R_G=10Ω

Pulsed

V_GS=0V

Pulsed

t_d(off)

t_f

I_D= -1A

I_D= -2A

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0.1

t_r

t_d(on)

0.01

0.5

1.5

0.01

0.1

DRAIN-CURRENT : -I_D[A]

SOURCE-DRAIN VOLTAGE : -V_SD[V]

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.11 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

Fig.12 Switching Characteristics

Fig.10 Reverse Drain Current

vs. Sourse-Drain Voltage

10000

1000

100

Ta=25°C

f=1MHz

V_GS=0V

Ciss

Coss

Ta=25°C

V_DD= -6V

I_D= -2.0A

R_G= 10Ω

Pulsed

Crss

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : -V_DS[V]

TOTAL GATE CHARGE : Qg [nC]

Fig.13 Dynamic Input Characteristics

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

zMeasurement circuit

Pulse Width

10%

50%

90%

D.U.T.

10%

90%

^DSt^d(on)

td(off)

toff

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

VGS

VDS

D.U.T.

G(Const)

Qgd

VDD

Charge

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

zNotice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

www.rohm.com

2009.05 - Rev.A

4/4

Notice

N o t e s

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content speciﬁed herein is subject to change for improvement without notice.

The content speciﬁed herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the speciﬁcations,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products speciﬁed in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofﬁce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products speciﬁed in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

against the possibility of physical injury, ﬁre or any other damage caused in the event of the

failure of any Product, such as derating, redundancy, ﬁre control and fail-safe designs. ROHM

shall bear no responsibility whatsoever for your use of any Product outside of the prescribed

scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or

system which requires an extremely high level of reliability the failure or malfunction of which

may result in a direct threat to human life or create a risk of human injury (such as a medical

instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,

fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of

any of the Products for the above special purposes. If a Product is intended to be used for any

such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology speciﬁed herein that may

be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to

obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R0039

RW1A020ZP [ROHM]

相关型号：

RW1A020ZPT2R

RW1A025AP

RW1A025APT2CR

RW1A025APT2R

RW1A030AP

RW1A030APT2CR

RW1A107M1012MSS

RW1A337M12020SS

RW1A476M0811MPG

RW1C015UN

RW1C015UNT2R

RW1C020UN