RZQ045P01 [ROHM]
1.5V Drive Pch MOSFET; 1.5V驱动P沟道MOSFET
| 型号： | RZQ045P01 |
| 厂家： | 
ROHM |
| 描述： | 1.5V Drive Pch MOSFET |
| 文件： | 总6页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RZQ045P01
Transistors
1.5V Drive Pch MOSFET
RZQ045P01
zDimensions (Unit : mm)
zStructure
Silicon P-channel MOSFET
TSMT6
1.0MAX
2.9
1.9
0.95 0.95
0.85
0.7
zFeatures
(6)
(5)
(4)
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
0~0.1
(1)
(2)
(3)
1pin mark
0.16
0.4
Each lead has same dimensions
Abbreviated symbol : YG
zApplications
Switching
zPackaging specifications
zEquivalent circuit
Package
Taping
TR
(6)
(5)
(4)
Type
Code
Basic ordering unit (pieces)
3000
∗2
RZQ045P01
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
−12
10
Unit
V
V
Continuous
4.5
A
Drain current
Pulsed
∗1
IDP
12
A
Source current
(Body diode)
Continuous
IS
−1
A
∗1
∗2
Pulsed
ISP
−12
1.25
150
A
Total power dissipation
Channel temperature
PD
W
°C
°C
Tch
Tstg
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
−55 to +150
zThermal resistance
Parameter
Symbol
Rth(ch-a) ∗
Limits
100
Unit
Channel to ambient
∗ Mounted on a ceramic board.
°C / W
1/5
RZQ045P01
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS= 10V, VDS=0V
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS −12
Zero gate voltage drain current
V
µA
V
ID= −1mA, VGS=0V
IDSS
−
−
−
−1
−1.0
35
43
58
100
−
−
−
−
−
−
−
−
−
−
−
VDS= −12V, VGS=0V
DS= −6V, ID= −1mA
Gate threshold voltage
VGS (th) −0.3
V
−
−
−
−
6.5
25
31
39
50
−
2450
320
290
12
75
390
215
31
4.5
4.0
mΩ ID= −4.5A, VGS= −4.5V
mΩ ID= −2.2A, VGS= −2.5V
mΩ ID= −2.2A, VGS= −1.8V
mΩ ID= −0.9A, VGS= −1.5V
∗
Static drain-source on-state
resistance
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
S
V
V
V
DS= −6V, ID= −4.5A
DS= −6V
GS=0V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
td (on)
f=1MHz
∗
∗
∗
∗
∗
∗
∗
I
V
V
R
D
= −2.2A
DD −6V
GS= −4.5V
t
r
Turn-off delay time
Fall time
td (off)
tf
L
2.7Ω
=10Ω
R
G
Total gate charge
Gate-source charge
Qg
nC VDD −6V
nC GS= −4.5V
R
L
1.3Ω
=10Ω
Qgs
Qgd
−
−
V
RG
Gate-drain charge
nC ID= −4.5A
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max.
Conditions
IS= −4.5A, VGS=0V
Unit
∗
V
SD
−
−
−1.2
V
∗Pulsed
2/5
RZQ045P01
Transistors
zElectrical characteristic curves
10
8
10
10
1
Ta=25
Pulsed
℃
-10V
-1.6V
Ta=25
Pulsed
℃
-10V
-4.5V
-2.5V
-1.8V
Ta=125
℃
℃
℃
8
6
4
2
0
-1.5V
Ta= 75
Ta= 25
-1.5V
6
Ta= -25
℃
-1.4V
-1.3V
0.1
1.4V
-1.3V
4
-1.2V
0.01
0.001
2
VGS=-1.2V
VDS= -6V
Pulsed
VGS=-1.1V
0
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
DRAIN-SOURCE VOLTAGE : -VDS[V]
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.3 Typical Transfer Characteristics
1000
1000
100
10
1000
100
10
VGS= -4.5V
Pulsed
Ta=125
℃
VGS= -2.5V
Pulsed
Ta=125
℃
℃
℃
Ta=25
Pulsed
℃
Ta= 75
℃
Ta= 75
Ta= 25
Ta= 25
℃
Ta= -25
℃
100
10
1
Ta= -25
℃
VGS=-1.5V
VGS=-1.8V
V
GS=-2.5V
VGS=-4.5V
1
1
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
1000
100
10
100
10
1000
100
10
VGS=0V
Pulsed
VGS= -1.8V
Pulsed
VGS= -1.5V
Pulsed
Ta=125
℃
℃
℃
Ta= 75
Ta= 25
1
Ta= -25
℃
Ta =125
℃
Ta=125
℃
Ta =75
Ta =25
℃
Ta= 75
Ta= 25
℃
℃
0.1
℃
Ta =-25
℃
Ta= -25
℃
1
1
0.01
0.1
1
10
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
3/5
RZQ045P01
Transistors
80
60
100
10
4.5
4
VDS=-6V
Pulsed
Ta=25
℃
Ta=25
Pulsed
℃
V
DD= -6V
3.5
3
ID= -4.5A
RG=10Ω
Pulsed
ID= -2.2A
ID= -4.5A
Ta= -25
℃
2.5
2
1
40
20
0
Ta= 25
Ta= 75
℃
℃
1.5
1
Ta= 125
℃
0.1
0.01
0.5
0
0.01
0.1
1
10
0
2
4
6
8
10
0
5
10 15 20 25 30 35
DRAIN-CURRENT : -ID[A]
GATE-SOURCE VOLTAGE : -VGS[V]
TOTAL GATE CHARGE : Qg [nC]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
Fig.11 Forward Transfer Admittance
vs. Drain Current
Fig.12 Dynamic Input Characteristics
100000
10000
1000
100
Ta=25°C
Ta=25°C
V
V
DD= -6V
f=1MHz
GS=0V
Ciss
10000
1000
100
10
td(off)
GS=-4.5V
V
RG=10Ω
tf
Pulsed
Coss
Crss
td(on)
tr
1
0.01
0.1
1
10
100
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.14 Switching Characteristics
1
10
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
4/5
RZQ045P01
Transistors
zMeasurement circuits
Pulse Width
V
GS
I
D
VGS
10%
50%
V
DS
50%
90%
RL
10%
10%
90%
D.U.T.
RG
VDD
90%
tr
V
DS td(on)
td(off)
tf
t
on
toff
Fig.16 Switching Waveforms
Fig.15 Switching Time Measurement Circuit
V
G
V
GS
ID
V
DS
Q
g
RL
V
GS
I
G(Const)
D.U.T.
Q
gs
Qgd
RG
V
DD
Charge
Fig.17 Gate Charge Measurement Circuit
Fig.18 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment .
Please consider to design ESD protection circuit.
5/5
Appendix
Notes
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upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account when
designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no respon-
sibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of
application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or
exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility
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The Products specified in this document are intended to be used with general-use electronic equipment or
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The Products are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
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Appendix1-Rev3.0
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