UMF22NTR [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, UMT6, SC-88, 6 PIN;
| 型号： | UMF22NTR |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, UMT6, SC-88, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF22 / UMF22N
Transistors
Power management (dual transistors)
EMF22 / UMF22N
2SC5585 and DTC114E are housed independently in a EMT6 or UMT6 package.
zExternal dimensions (Units : mm)
zApplication
EMF22
Power management circuit
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.2
1.6
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol : F22
UMF22N
zStructure
Silicon epitaxial planar transistor
1.25
2.1
zEquivalent circuits
(3)
(2) (1)
0.1Min.
DTr2
Tr1
Each lead has same dimensions
R1
ROHM : UMT6
EIAJ : SC-88
R2
Abbreviated symbol :F22
(4)
(5)
(6)
R
1
=10kΩ
=10kΩ
R2
zPackaging specifications
Type
Package
EMF22 UMF22N
EMT6
F22
UMT6
F22
Marking
Code
T2R
TR
Basic ordering unit(pieces)
8000
3000
1/4
EMF22 / UMF22N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
15
12
6
Unit
V
V
VCBO
VCEO
VEBO
V
I
C
500
1.0
150(TOTAL)
150
−55~+150
mA
A
mW
°C
°C
Collector current
1
2
I
CP
Power dissipation
Junction temperature
Range of storage temperature
P
Tj
Tstg
C
1 Single pulse PW=1ms
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Parameter
Symbol
Limits
50
Unit
V
Supply voltage
V
CC
Input voltage
Collector current
V
IN
−10~+40
100
V
1
2
I
C
mA
mA
mW
°C
I
O
50
Output current
Power dissipation
P
Tj
Tstg
C
150(TOTAL)
150
−55~+150
Junction temperature
Range of storage temperature
1 Characteristics of built-in transistor.
°C
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
12
15
6
I
I
I
C
=1mA
=10µA
−
−
V
C
−
−
V
E
=10µA
CB=15V
EB=6V
I
CBO
EBO
CE(sat)
FE
−
−
100
100
250
680
−
nA
nA
mV
−
V
V
Emitter cut-off current
I
−
−
Collector-emitter saturation voltage
DC current gain
V
−
90
−
I
C
=200mA, I
B
=10mA
=10mA
=−10mA, f=100MHz
=0mA, f=1MHz
h
270
−
V
V
V
CE=2V, I
C
Transition frequency
f
T
320
7.5
MHz
pF
CE=2V, IE
CB=10V, I
E
Collector output capacitance
Cob
−
−
DTr2
Parameter
Symbol
Min.
−
Typ.
−
Max.
0.5
−
Unit
V
Conditions
V
V
I(off)
V
CC=5V, I
=0.3V, I
/I =10mA/0.5mA
=5V
CC=50V, V
=5V, I =5mA
O
=100µA
Input voltage
I(on)
3
−
VO
O
=10mA
Output voltage
Input current
V
O(on)
−
0.1
−
0.3
0.88
0.5
−
V
mA
µA
−
I
O I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
I
O(off)
−
−
I=0V
G
I
30
7
−
O
O
−
10
13
R1
kΩ
R2/R1
1.2
−
−
0.8
−
1
−
MHz
250
VCE=10V, I
E
=−5mA, f=100MHz
f
T
Transition frequency of the device
2/4
EMF22 / UMF22N
Transistors
zElectrical characteristic curves
Tr1
1000
1000
1000
100
10
V
CE=2V
V
CE=2V
Ta=25°C
Pulsed
Ta=125°C
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
100
10
1
100
10
C
°
C
C
°
I
C
/I
/I
/I
B
=50
°
125
40
25
=
−
=
=
Ta
Ta
I
C
B=20
Ta
I
C
B
=10
1 1
10
100
1000
11
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
10000
1000
100
1000
I
C
/I
B
=20
VCE=2V
Ta=25°C
Pulsed
I
C B=20
/I
Pulsed
Pulsed
Ta=−40°C
Ta=25°C
Ta=125°C
100
10
100
10
Ta=25°C
Ta=125°C
Ta=−40°C
11
10
100
1000
11
10
100
1000
10 1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product
vs. emitter current
vs. collector current ( ΙΙ )
1000
I
f
E
=
0A
1MHz
25°C
=
Ta
=
100
Cib
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB V)
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4
EMF22 / UMF22N
Transistors
DTr2
10m
5m
100
1k
V
O
=0.3V
V
CC=5V
VO=5V
50
500
Ta=100°C
25°C
−40°C
2m
1m
Ta=100°C
25°C
−40°C
20
10
200
500µ
100
50
Ta=−40°C
25°C
100°C
5
200µ
100µ
50µ
2
20
1
10
5
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
0
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
1
lO/lI=20
500m
Ta=100°C
25°C
200m
−40°C
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I (A)
O
Fig.4 Output voltage vs. output
current
4/4
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