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K5L5628JBM [SAMSUNG]

256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM; 256M位（ 16M ×16）同步突发，多行NOR闪存/ 128M位（ 8M ×16）同步突发UtRAM

K5L5628JBM


元器件型号：	K5L5628JBM
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM 256M位（ 16M ×16）同步突发，多行NOR闪存/ 128M位（ 8M ×16）同步突发UtRAM 闪存
PDF文件：	总98页 (文件大小：1567K)
下载文档：	下载PDF数据表文档文件
型号参数：K5L5628JBM参数

K5L5628JBM-DH18

256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

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49 SAMSUNG

K5L5628JBM-DH18

Memory Circuit, Flash+PSRAM, CMOS, PBGA115

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0 SAMSUNG

K5L5628JBM-DH180

Memory Circuit, 16MX16, CMOS, PBGA115, 8 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-115

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0 SAMSUNG

K5L5628JTM

256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

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34 SAMSUNG

K5L5628JTM-DH18

256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

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39 SAMSUNG

K5-M8

Heatsink For stud devices

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270 SEMIKRON

K5-N

Adjustable Type Coils

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28 MITSUMI

K5-N1

Adjustable Type Coils

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28 MITSUMI

K5N1229ACD-BQ12

512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

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28 SAMSUNG

K5P2880YCM

Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

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94 SAMSUNG

K5P2881BCM-F0700

Memory Circuit, 16MX8, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, FBGA-69

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0 SAMSUNG

K5P5781FCM-F055

Memory Circuit, Flash+SRAM, CMOS, PBGA69

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0 SAMSUNG

K5P5781FCM-F0550

Memory Circuit, 16MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, FBGA-69

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0 SAMSUNG

K5P6480YCM-T085

Memory Circuit, 8MX8, CMOS, PBGA69, 8 X 13 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG

K5Q6432YCM-T010

Memory Circuit, Flash+PSRAM, 8MX8, CMOS, PBGA69, 8 X 13 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG

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