SLA5022_06 [SANKEN]
PNP Darlington + N-channel MOSFET 3-phase motor drive; PNP达林顿+ N沟道MOSFET的三相电动机驱动
| 型号： | SLA5022_06 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | PNP Darlington + N-channel MOSFET 3-phase motor drive |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Darlington + N-channel MOSFET
• • •
External dimensions
SLA (12-pin)
3-phase motor drive
SLA5022
A
Electrical characteristics (Sink : N channel MOSFET)
Absolute maximum ratings
(Ta=25°C)
(Ta=25°C)
Specification
Symbol
Ratings
Unit
Symbol
Unit
Conditions
min
typ
max
VM
IO
60
V
A
A
V
A
V(BR)DSS
IGSS
60
V
nA
µA
V
ID=250µA, VGS=0V
VGS=±10V
±6 (PW≤100ms)
±500
250
2.0
IOP
VGSS
IB
±10 (PW≤1ms)
IDSS
VDS=60V, VGS=0V
VDS=10V, ID=250µA
VDS=10V, ID=4A
VGS=10V, ID=4A
VGS=4V, ID=4A
VDS=25V, f=1.0MHz,
VGS=0V
±10
VTH
1.0
3.1
–0.5
Re(yfs)
4.6
0.17
0.25
400
160
80
S
5 (Ta=25°C)
0.22
0.30
RDS(ON)
Ω
PT
W
35 (Tc=25°C)
θ j-a
θ j-c
VISO
Tj
25
°C/W
°C/W
Vrms
°C
Ciss
Coss
ton
pF
pF
ns
ns
V
3.57
1000 (Between fin and lead pin, AC)
150
ID=4A, VDD=30V,
VGS=5V
toff
50
Tstg
–40 to +150
°C
VSD
trr
1.1
1.5
ISD=4A, VGS=0V
IF=±100mA
150
ns
■Equivalent circuit diagram
1
V
M
R1
R2
2
8
9
3
OUT
7
OUT
10
OUT3
1
2
4
6
11
5
12
R1: 3kΩ typ R2: 80Ω typ
Characteristic curves (N-channel)
VDS-ID Characteristics (Typical)
VGS-ID Temperature Characteristics (Typical)
IDS-RDS(ON) Characteristics (Typical)
(VDS=10V)
10
0.3
10
10V
8
8
6
4
4V
4V
0.2
6
3.5V
V
GS=10V
4
T
C=–40°C
0.1
25°C
VGS=3V
2
0
2
125°C
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
0
2
4
6
8
10
V
GS (V)
I
D (A)
VDS (V)
ID-Re(yfs) Temperature Characteristics (Typical)
TC-RDS(ON) Characteristics (Typical)
VDS-Cpacitance Characteristics (Typical)
VGS=0V
(ID=2.5A)
f=1MHz
10
0.4
0.3
0.2
0.1
0
1000
500
VDS=10V
Ciss
5
4V
Coss
V
GS=10V
100
50
25°C
1
Crss
0.5
0.3
10
0.05
0.1
0.5
1
5
10
150
–40
0
50
100
0
10
20
30
VDS (V)
40
50
I
D
(A)
T
C
(°C)
VSD-IDR Characteristics (Typical)
Safe Operating Area (SOA)
(TC=25°C)
10
20
I
D (pulse) max
10
5
8
6
4
2
0
10V
1
4V
0.5
VGS=0V
1.0
0.1
0.5
1
5
10
50
100
0
0.5
1.5
V
DS (V)
V
SD (V)
60
SLA5022
Electrical characteristics (Source: PNP transistor)
(Ta=25°C)
Specification
Symbol
Unit
Conditions
min
typ
max
–10
–5
ICBO
IEBO
VCEO
hFE
µA
mA
V
VCB=–60V
VEB=–6V
–1
–60
IC=–25mA
2000
5000
12000
–1.5
–2.0
2.0
VCE=–4V, IC=–4A
VCE(sat)
VBE(sat)
VFEC
trr
V
V
IC=–4A, IB=–10mA
V
IFEC=4A
IF=±0.5A
1.0
1.0
1.4
0.6
120
150
µs
µs
µs
µs
MHz
pF
ton
VCC –25V,
tstg
IC=–4A,
tf
IB1=–IB2=–10mA
VCE=–12V, IE=1A
VCB=–10V, f=1MHz
fT
Cob
Characteristic curves (PNP)
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
hFE-IC Temperature Characteristics (Typical)
(VCE=–4V)
(VCE=–4V)
–12
20000
20000
IB=–10mA
–3mA
–2mA
10000
10000
5000
–10
–8
typ
5000
–6
–1mA
1000
500
1000
500
–4
–0.5mA
–2
200
–0.1
200
–0.1
0
–0.5
–1
–5
–10
0
–2
–4
–6
–0.5
–1
–5
–10
I
C (A)
VCE (V)
I
C (A)
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
(VCE=–4V)
(IC / IB=1000)
–3
–3
–12
–10
–8
–2
–2
–1
–6
IC=–8A
Ta=–30°C
IC=–4A
–1
–4
25°C
IC=–2A
75°C
C
°
125°C
–2
75
0
0
0
–0.3 –0.5
–1
–5 –10
–50 –100 –200
0
–1
–2
–3
–0.1
–0.5
–1
–5
–10 –20
I
B (mA)
I
C (A)
VBE (V)
θ j-a-PW Characteristics
Safe Operating Area (SOA)
PT-Ta Characteristics
20
10
5
–20
–10
40
35
With Silicone Grease
Natural Cooling
All Circuits Operating
100
µ
1ms
s
10ms
30
25
20
15
10
–5
With Infinite Heatsink
–1
–0.5
1
Single Pulse
Without Heatsink
Without Heatsink
5
0
T
a=25°C
0.5
1
–0.1
–3
–5
–10
–50
–100
0
50
100
150
5
10
50 100
500 1000
V
CE (V)
PW (mS)
Ta (°C)
61
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