ENA0975B [SANYO]

Monolithic Linear IC For Ultra-small illumination Sensor Photo IC; 单片线性IC,用于超小型照度传感器IC图片
ENA0975B
型号: ENA0975B
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

Monolithic Linear IC For Ultra-small illumination Sensor Photo IC
单片线性IC,用于超小型照度传感器IC图片

传感器
文件: 总6页 (文件大小:145K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENA0975B  
Monolithic Linear IC  
For Ultra-small illumination Sensor  
LA0151CS  
Photo IC  
Overview  
The LA0151CS is a photo IC for ultra-small illumination sensor. It enables to be mounted on a very small limited space  
such as on the mobile phones which is becoming small and thinner and on other mobile applications.  
Functions  
Linear current output  
Low gain mode function [low gain : -35dB]  
Specifications  
Absolute Maximum Ratings at Ta = 25°C  
Parameter  
Maximum supply voltage  
Operating temperature  
Storage temperature  
Symbol  
Conditions  
Ratings  
Unit  
V
V
6
-30 to +85  
-40 to +100  
CC  
Topr  
Tstg  
°C  
°C  
Recommended operating conditions and operating voltage range at Ta = 25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
2.2  
max  
5.5  
Recommended supply voltage  
SW pin low voltage  
V
3.3  
V
V
V
CC  
Vl  
Normal gain mode  
Low gain mode  
0
0.4  
SW pin high voltage  
Vh  
2.1  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
's products or  
equipment.  
51408 MS 20080507-S00003 / 13008 MS 20080117-S00001 / N2107 MS PC 20071022-S00007 No.A0975-1/6  
LA0151CS  
Electrical and optical characteristics at Ta = 25°C, V  
= 3.3V  
CC  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
210  
Current dissipation (1) *1, *3  
Current dissipation (2) *1, *3  
Output current (1) *1, *3  
Output current (2) *1, *3  
Output current (3) *1, *3  
Output current (4) *1, *3  
Dark current  
I
Ev = 1000 lx, R = 5k, N mode  
90  
42  
6
150  
70  
µA  
µA  
CC  
L
I
Ev = 1000 lx, R = 5k, L mode  
98  
10  
CC  
L
I
I
I
I
1
2
3
4
Ev = 100 lx, N mode  
Ev = 1000 lx, N mode  
Ev = 100 lx, L mode  
Ev = 1000 lx, L mode  
Ev = 0 lx, N mode, L mode  
8
µA  
O
O
O
O
60  
80  
100  
0.2  
2.0  
0.1  
µA  
0.12  
1.2  
0.16  
1.6  
µA  
µA  
Ileak  
Itc  
µA  
Temperature coefficient *2  
Ev = 100 lx, N mode, L mode,  
0.34  
%/°C  
Ta = -20 to 60°C  
Rise time (1) *4  
Tr1  
Tr2  
Tf1  
Tf2  
λp  
Ev = 1000 lx, R = 5k, N mode  
15  
20  
40  
50  
µs  
µs  
µs  
µs  
nm  
V
L
Rise time (2) *4  
Ev = 1000 lx, R = 500k, L mode  
L
Fall time (1) *4  
Ev = 1000 lx, R = 5k, N mode  
150  
150  
550  
3.2  
500  
500  
L
Fall time (2) *4  
Ev = 1000 lx, R = 500k, L mode  
L
Peak sensitivity wave length *2  
Saturation output voltage *5  
V
Ev = 1000 lx, R = 150k, N mode  
3.0  
O
L
N mode and L mode stand for the normal gain mode and the low gain mode, respectively.  
*1. Measured with the standard light source A. White LED is used instead in the mass production line.  
*2. Design guaranteed item  
*3. Test circuit for measuring current dissipation and output current  
A
V
Light  
source  
CC  
Ipd  
OUT  
LA0151CS  
A
*4. Measuring method of rise time (Tr) and fall time (Tf)  
Ipd  
Pulse drive  
V
CC  
0A  
White LED  
Ipd  
90%  
10%  
OUT  
LA0151CS  
VOUT  
GND  
Tr  
Tf  
*5. Reference value : min = 2.6V and typ = 2.8V when V  
CC  
= 2.9V  
No.A0975-2/6  
LA0151CS  
Package Dimensions  
unit : mm (typ)  
3350A  
TOP VIEW  
1.01  
SIDE VIEW  
BOTTOM VIEW  
4
3
3
2
4
1
1
2
0.5  
SIDE VIEW  
SANYO : ODCSP4(1.01X1.01)  
Pad layout  
<Bottom View>  
<Top View>  
Pin No.  
Pin Name  
Function  
Power supply  
Switch  
1
2
3
4
V
CC  
SW  
1
2
4
3
4
3
1
2
GND  
OUT  
Ground  
Output  
Ball pitch : 0.5mm, Ball size : 0.18mm  
Pad layout (Photos)  
Top View  
4,Out  
Bottom View  
1
4
4
3
1
2
Pin 1 mark  
It is located at the center of the bottom  
of the pakage.  
3,Gnd  
1,V  
CC  
2
2,SW  
3
Photo diode. Only this part looks dark on the product.  
* The photo diode is located in pin 3. Be careful not to mistake the pin 1 mark for the photo diode.  
No.A0975-3/6  
LA0151CS  
Internal block diagram  
V
CC  
1
PD  
OUT  
Current  
amplifier  
4
2
SW  
3
GND  
Chip pattern and photo-receiving pattern diagrams  
LA0151CS chip pattern diagram (top view)  
1010µm  
105µm  
105µm  
1010µm  
* Pin 1 is on the upper left.  
LA0151CS photo-receiving pattern enlarged diagram (effective area)  
162µm  
15µm  
17µm  
69µm  
80.5µm  
223µm  
249.5µm  
10µm  
80.5µm  
249.5µm  
No.A0975-4/6  
LA0151CS  
I
O
-- Illuminance  
I
-- Illuminance  
CC  
1000  
1000  
7
5
3
2
7
5
100  
7
5
3
2
3
2
10  
7
5
3
2
1
100  
7
5
3
2
7
5
0.1  
7
5
3
2
3
2
0.01  
7
5
3
2
0.001  
10  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
2
3
5 7  
2
3
5 7  
2
3
5 7  
10k  
1
10  
100  
1k  
10k  
1
10  
100  
1k  
Illuminance -- lx  
Illuminance -- lx  
RI -- V  
O
RI  
-- V  
CC  
CC  
CC  
1.4  
1.2  
1
1.4  
1.2  
1
@1000lx  
@1000lx  
0.8  
0.6  
0.4  
0.8  
0.6  
0.4  
0.2  
0
0.2  
0
2
3
4
5
6
2
3
4
5
6
Supply voltage, V  
CC  
-- -- V  
Supply voltage, V  
CC  
-- V  
RI -- Ta  
O
I
-- Ta  
D
1.4  
1.2  
1.E+00  
7
5
3
2
1.E-01  
7
5
3
2
1
0.8  
0.6  
1.E-02  
7
5
3
2
1.E-03  
7
5
3
2
1.E-04  
7
5
3
2
0.4  
1.E-05  
7
5
0.2  
0
3
2
1.E-06  
--60  
--40  
--20  
0
20  
40  
60  
80  
100  
120  
--60  
--40  
--20  
0
20  
40  
60  
80  
100  
120  
Ambient temperature, Ta -- °C  
Ambient temperature, Ta -- °C  
RS -- λ  
V
-- Illuminance  
O
10  
1
7
5
V
R
= 3.3V  
CC  
= 15kΩ  
0.9  
L
3
2
0.8  
0.7  
0.6  
1
7
5
3
2
0.1  
7
5
3
2
0.5  
0.4  
0.3  
0.2  
0.001  
7
5
3
2
0.1  
0
0.001  
2 3 5 7  
2 3 5 7  
100  
2 3 5 7  
1k  
2 3 5 7  
10k  
2 3 5 7  
100k  
200  
400  
600  
800  
1000  
1
10  
Wavelength, λ -- nm  
Illuminance -- lx  
No.A0975-5/6  
LA0151CS  
PLE -- deg N gain  
PLE -- deg L gain  
1.2  
1
1.2  
1
@1000lx  
@1000lx  
0.8  
0.6  
0.4  
0.8  
0.6  
0.4  
0.2  
0
0.2  
0
--90  
--60  
--30  
0
30  
60  
90  
--90  
--60  
--30  
0
30  
60  
90  
Angle, deg -- °  
Angle, deg -- °  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
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without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's  
intellctual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of May, 2008. Specifications and information herein are subject  
to change without notice.  
PS No.A0975-6/6  

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