ENA0975B [SANYO]
Monolithic Linear IC For Ultra-small illumination Sensor Photo IC; 单片线性IC,用于超小型照度传感器IC图片型号: | ENA0975B |
厂家: | SANYO SEMICON DEVICE |
描述: | Monolithic Linear IC For Ultra-small illumination Sensor Photo IC |
文件: | 总6页 (文件大小:145K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA0975B
Monolithic Linear IC
For Ultra-small illumination Sensor
LA0151CS
Photo IC
Overview
The LA0151CS is a photo IC for ultra-small illumination sensor. It enables to be mounted on a very small limited space
such as on the mobile phones which is becoming small and thinner and on other mobile applications.
Functions
• Linear current output
• Low gain mode function [low gain : -35dB]
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Maximum supply voltage
Operating temperature
Storage temperature
Symbol
Conditions
Ratings
Unit
V
V
6
-30 to +85
-40 to +100
CC
Topr
Tstg
°C
°C
Recommended operating conditions and operating voltage range at Ta = 25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
2.2
max
5.5
Recommended supply voltage
SW pin low voltage
V
3.3
V
V
V
CC
Vl
Normal gain mode
Low gain mode
0
0.4
SW pin high voltage
Vh
2.1
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
51408 MS 20080507-S00003 / 13008 MS 20080117-S00001 / N2107 MS PC 20071022-S00007 No.A0975-1/6
LA0151CS
Electrical and optical characteristics at Ta = 25°C, V
= 3.3V
CC
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
210
Current dissipation (1) *1, *3
Current dissipation (2) *1, *3
Output current (1) *1, *3
Output current (2) *1, *3
Output current (3) *1, *3
Output current (4) *1, *3
Dark current
I
Ev = 1000 lx, R = 5kΩ, N mode
90
42
6
150
70
µA
µA
CC
L
I
Ev = 1000 lx, R = 5kΩ, L mode
98
10
CC
L
I
I
I
I
1
2
3
4
Ev = 100 lx, N mode
Ev = 1000 lx, N mode
Ev = 100 lx, L mode
Ev = 1000 lx, L mode
Ev = 0 lx, N mode, L mode
8
µA
O
O
O
O
60
80
100
0.2
2.0
0.1
µA
0.12
1.2
0.16
1.6
µA
µA
Ileak
Itc
µA
Temperature coefficient *2
Ev = 100 lx, N mode, L mode,
0.34
%/°C
Ta = -20 to 60°C
Rise time (1) *4
Tr1
Tr2
Tf1
Tf2
λp
Ev = 1000 lx, R = 5kΩ, N mode
15
20
40
50
µs
µs
µs
µs
nm
V
L
Rise time (2) *4
Ev = 1000 lx, R = 500kΩ, L mode
L
Fall time (1) *4
Ev = 1000 lx, R = 5kΩ, N mode
150
150
550
3.2
500
500
L
Fall time (2) *4
Ev = 1000 lx, R = 500kΩ, L mode
L
Peak sensitivity wave length *2
Saturation output voltage *5
V
Ev = 1000 lx, R = 150kΩ, N mode
3.0
O
L
N mode and L mode stand for the normal gain mode and the low gain mode, respectively.
*1. Measured with the standard light source A. White LED is used instead in the mass production line.
*2. Design guaranteed item
*3. Test circuit for measuring current dissipation and output current
A
V
Light
source
CC
Ipd
OUT
LA0151CS
A
*4. Measuring method of rise time (Tr) and fall time (Tf)
Ipd
Pulse drive
V
CC
0A
White LED
Ipd
90%
10%
OUT
LA0151CS
VOUT
GND
Tr
Tf
*5. Reference value : min = 2.6V and typ = 2.8V when V
CC
= 2.9V
No.A0975-2/6
LA0151CS
Package Dimensions
unit : mm (typ)
3350A
TOP VIEW
1.01
SIDE VIEW
BOTTOM VIEW
4
3
3
2
4
1
1
2
0.5
SIDE VIEW
SANYO : ODCSP4(1.01X1.01)
Pad layout
<Bottom View>
<Top View>
Pin No.
Pin Name
Function
Power supply
Switch
1
2
3
4
V
CC
SW
1
2
4
3
4
3
1
2
GND
OUT
Ground
Output
Ball pitch : 0.5mm, Ball size : 0.18mm
Pad layout (Photos)
Top View
4,Out
Bottom View
1
4
4
3
1
2
Pin 1 mark
It is located at the center of the bottom
of the pakage.
3,Gnd
1,V
CC
2
2,SW
3
Photo diode. Only this part looks dark on the product.
* The photo diode is located in pin 3. Be careful not to mistake the pin 1 mark for the photo diode.
No.A0975-3/6
LA0151CS
Internal block diagram
V
CC
1
PD
OUT
Current
amplifier
4
2
SW
3
GND
Chip pattern and photo-receiving pattern diagrams
LA0151CS chip pattern diagram (top view)
1010µm
105µm
105µm
1010µm
* Pin 1 is on the upper left.
LA0151CS photo-receiving pattern enlarged diagram (effective area)
162µm
15µm
17µm
69µm
80.5µm
223µm
249.5µm
10µm
80.5µm
249.5µm
No.A0975-4/6
LA0151CS
I
O
-- Illuminance
I
-- Illuminance
CC
1000
1000
7
5
3
2
7
5
100
7
5
3
2
3
2
10
7
5
3
2
1
100
7
5
3
2
7
5
0.1
7
5
3
2
3
2
0.01
7
5
3
2
0.001
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
10k
1
10
100
1k
10k
1
10
100
1k
Illuminance -- lx
Illuminance -- lx
RI -- V
O
RI
-- V
CC
CC
CC
1.4
1.2
1
1.4
1.2
1
@1000lx
@1000lx
0.8
0.6
0.4
0.8
0.6
0.4
0.2
0
0.2
0
2
3
4
5
6
2
3
4
5
6
Supply voltage, V
CC
-- -- V
Supply voltage, V
CC
-- V
RI -- Ta
O
I
-- Ta
D
1.4
1.2
1.E+00
7
5
3
2
1.E-01
7
5
3
2
1
0.8
0.6
1.E-02
7
5
3
2
1.E-03
7
5
3
2
1.E-04
7
5
3
2
0.4
1.E-05
7
5
0.2
0
3
2
1.E-06
--60
--40
--20
0
20
40
60
80
100
120
--60
--40
--20
0
20
40
60
80
100
120
Ambient temperature, Ta -- °C
Ambient temperature, Ta -- °C
RS -- λ
V
-- Illuminance
O
10
1
7
5
V
R
= 3.3V
CC
= 15kΩ
0.9
L
3
2
0.8
0.7
0.6
1
7
5
3
2
0.1
7
5
3
2
0.5
0.4
0.3
0.2
0.001
7
5
3
2
0.1
0
0.001
2 3 5 7
2 3 5 7
100
2 3 5 7
1k
2 3 5 7
10k
2 3 5 7
100k
200
400
600
800
1000
1
10
Wavelength, λ -- nm
Illuminance -- lx
No.A0975-5/6
LA0151CS
PLE -- deg N gain
PLE -- deg L gain
1.2
1
1.2
1
@1000lx
@1000lx
0.8
0.6
0.4
0.8
0.6
0.4
0.2
0
0.2
0
--90
--60
--30
0
30
60
90
--90
--60
--30
0
30
60
90
Angle, deg -- °
Angle, deg -- °
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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above.
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
PS No.A0975-6/6
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