BU506DF [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU506DF |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU506DF
DESCRIPTION
·With TO-220Fa package
·High voltage
·High-speed switching
·Built-in damper diode.
APPLICATIONS
·Horizontal deflection circuits of colour
TV receivers.
·Line-operated switch-mode applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current
CONDITIONS
Open emitter
VALUE
UNIT
V
1500
Open base
700
V
Open collector
6
V
5
A
ICM
8
3
A
IB
A
IBM
Base current(peak)
5
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
20
W
ꢀ
Tj
150
-65-150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU506DF
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
hFE-1
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=100mA; IB=0,L=25mH
Collector-emitter saturation voltage IC=3A; IB=1.33A
700
V
V
V
1.0
1.3
30
Base-emitter saturation voltage
DC current gain
IC=3A; IB=1.33A
IC=0.1A ; VCE=5V
IC=3A ; VCE=5V
6
13
hFE-2
DC current gain
2.25
VCE=rated; VBE=0
Tj=125ꢀ
0.5
1.0
ICES
Collector cut-off current
Emitter cut-off current
Diode forward voltage
mA
mA
V
IEBO
VEB=6V; IC=0
IF=3A;
200
2.2
VF
1.5
Switching times
ts
tf
Storage time
6.5
0.7
µs
µs
I
CM = 3 A; IB( ) = 1A
end
LB = 12µH
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU506DF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
相关型号：
BU508A
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
Wing Shing
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