MJW21192 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | MJW21192 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJW21192
DESCRIPTION
·With TO-247 package
·Complement to type MJW21191
·Wild area of safe operation
APPLICATIONS
·Designed for power audio output, high
power drivers in audio amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-247) and symbol
3
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
MAX
150
150
5
UNIT
V
Open base
V
Open collector
V
8
A
ICM
Collector current-peak
Base current
16
A
IB
2
A
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
100
-65~150
-65~150
W
ꢀ
Tj
ꢀ
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Thermal resistance from junction to case
0.65
ꢀ/W
Rth j-C
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJW21192
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=10mA ;IB=0
Collector-emitter saturation voltage IC=4A; IB=0.4A
Collector-emitter saturation voltage IC=8A; IB=1.6A
150
1.0
2.0
2.0
10
V
-1
(sat)
V
VCE
-2
(sat)
VBE(ON)
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4A ; VCE=2V
V
ICES
VCB=150V; IE=0
VEB=5V; IC=0
µA
µA
IEBO
hFE-1
hFE-2
fT
10
IC=4A ; VCE=2V
15
5
100
DC current gain
IC=8A ; VCE=2V
Transition frequency
IC=1.0A ; VCE=10V,f=1MHz
4.0
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJW21192
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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