BCP3906 [SECOS]
-0.2A, -40V PNP Epitaxial Planar Transistor;
| 型号： | BCP3906 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | -0.2A, -40V PNP Epitaxial Planar Transistor |
| 文件： | 总1页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP3906
-0.2A, -40V
PNP Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
ꢀ
ꢀ
ꢀ
Complementary to BCP3904
Low Current
Low Voltage
1
2
3
A
E
C
MARKING
B
D
2A
F
G
H
K
Collector
PACKAGE INFORMATION
J
L
2
Package
MPQ
1K
Leader Size
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.60
4.25
1.60
2.60
Min.
Max.
1
Base
A
B
C
D
4.40
3.94
1.40
2.30
G
H
J
0.40
0.58
SOT-89
7’ inch
1.50 TYP
3.00 TYP
K
0.32
0.35
0.52
0.44
3
Emitter
E
F
1.50
0.89
1.70
1.2
L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
V
V
A
-40
-40
-6
-0.2
0.5
PC
TJ, TSTG
W
°C
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICEX
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Min.
-40
-40
-6
-
-
-
60
80
100
60
30
-
Typ.
Max.
Unit
V
V
Test Conditions
IC= -10µA, IE=0
IC= -1mA, IB=0
IE= -10µA, IC=0
VCB= -30V, IE=0
-
-
Collector-base breakdown voltage
Collector-emitter breakdown
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
-0.05
-0.05
-0.05
-
µA
µA
µA
-
-
-
-
-
V
V
VEB= -6V, IC=0
Collector ut-off current
VCB= -30V, VBE(off)= -3V
VCE= -1V, IC= -0.1mA
VCE= -1V, IC= -1mA
VCE= -1V, IC= -10mA
VCE= -1V, IC= -50mA
VCE= -1V, IC= -100mA
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
-
DC current gain
300
-
-
-0.25
-0.4
-0.85
-0.95
-
Collector-emitter saturation voltage
Base-emitter saturation voltage
-
-0.65
-
250
-
V
V
-
Transition frequency
Collector Capacitance
Emitter Capacitance
MHz VCE= -20V, IC= -10mA, f=100MHz
pF
pF
CC
CE
4.5
10
-
-
VCB= -5V, IE=0, f=1MHz
VEB= -0.5V, IC=0, f=1MHz
-
VCE= -5V, IC= -0.1mA,
f=10Hz~15.7kHz, RS=1KΩ
Noise Figure
NF
-
4
-
dB
35
35
225
75
Delay Time
Rise Time
Storage Time
Fall Time
TD
TR
TS
TF
-
-
-
-
-
-
-
-
nS
IC= -10mA, IB1= -IB2= -1mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jul-2014 Rev. A
Page 1 of 1
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