SMG2319P [SECOS]
P-Channel Enhancement MOSFET; P沟道增强型MOSFET
| 型号： | SMG2319P |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement MOSFET |
| 文件： | 总5页 (文件大小：769K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2319P
-2.1A , -30V , RDS(ON) 200 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SC-59
The miniature surface mount MOSFETs utilize
high cell density process. Low RDS(on) assures minimal
power loss and conserves energy, making this
device ideal for use in power management circuitry.
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
FEATURES
Low RDS(on) provides higher efficiency and extends
D
battery life.
Fast Switch.
H
J
G
Low Gate Charge.
Miniature SC-59 Surface Mount Package Saves
Board Space.
Millimeter
Min. Max.
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
0.10
0.20
K
0.45
0.55
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
APPLICATION
Voltage control small signal switch, power management
in portable and battery-powered products such as computer
portable electronics and other battery power application.
PACKAGE INFORMATION
3
Package
MPQ
Leader Size
SC-59
3K
7’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-30
±20
V
V
TA=25°C
TA=70°C
-2.1
Continuous Drain Current 1
ID
A
-1.7
Pulsed Drain Current 2
IDM
IS
±10
A
A
Continuous Source Current (Diode Conduction) 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
-0.4
1.25
0.8
Power Dissipation 1
PD
W
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Data
t≦5 sec
RθJA
250
285
Maximum Junction to Ambient 1
°C/W
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 1 of 5
SMG2319P
-2.1A , -30V , RDS(ON) 200 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
-
-
-1
-10
±100
-
VDS = -24V, VGS=0
DS = -24V, VGS=0, TJ=55°C
Zero Gate Voltage Drain Current
IDSS
μA
-
-
V
-
-
Gate-Body Leakage
IGSS
VGS(th)
ID(ON)
nA
V
VDS =0, VGS= ±20V
-1.3
-
Gate-Threshold Voltage
On-State Drain Current 1
VDS =VGS, ID = -250μA
VDS = -5V, VGS= -4.5V
VGS= -10V, ID = -2.1A
-3
-
-
-
A
-
-
200
300
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
VGS= -4.5V, ID = -1.7A
Forward Transconductance 1
Diode Forward Voltage
gFS
S
V
VDS= -5V,,ID = -2.1A
IS= -0.4A, VGS=0
-
2
-
-0.7
-1.2
VSD
Dynamic 2
-
-
-
-
-
-
-
3.4
-
-
-
-
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
ID= -2.1A
0.8
1.5
8
nC
nS
V
V
DS= -10V
GS= -5V
Qgd
Td(ON)
Tr
VDS= -10V
GEN= -10V
18
52
39
V
RG=50Ω
ID= -1.1A
Turn-Off Delay Time
Td(OFF)
Tf
Fall Time
Notes:
1.
2.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 2 of 5
SMG2319P
-2.1A , -30V , RDS(ON) 200 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 3 of 5
SMG2319P
-2.1A , -30V , RDS(ON) 200 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 4 of 5
SMG2319P
-2.1A , -30V , RDS(ON) 200 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 5 of 5
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