SMG2339P [SECOS]
P-Channel Enhancement MOSFET; P沟道增强型MOSFET
| 型号： | SMG2339P |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement MOSFET |
| 文件： | 总2页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2339P
-3.6 A, -30 V, RDS(ON) 0.057
P-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density process
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry.
Typical applications are lower voltage application, power management in
portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Fast Switch.
Low Gate Charge.
D
H
J
G
Miniature SC-59 surface mount package saves board space.
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
0.10 REF.
0.40 REF.
Max.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
PRODUCT SUMMARY
PRODUCT SUMMARY
0.10
0.45
0.20
0.55
K
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
ID(A)
-3.6
-2.8
VDS(V)
RDS(on) (
Drain
0.057@VGS= -4.5V
0.089@VGS= -2.5V
-30
Gate
Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
RATING
-30
UNIT
V
Gate-Source Voltage
VGS
±12
V
TA=25°C
TA=70°C
±3.6
Continuous Drain Current A
ID
A
±2.9
Pulsed Drain Current B
Continuous Source Current (Diode Conduction) A
IDM
IS
±10
A
A
0.4
TA=25°C
TA=70°C
1.25
Power Dissipation A
PD
W
0.8
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
THERMAL RESISTANCE DATA
t≦5 sec
RθJA
100
150
Maximum Junction to Ambient A
°C/W
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Jul-2010 Rev. A
Page 1 of 2
SMG2339P
-3.6 A, -30 V, RDS(ON) 0.057
P-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
SYMBO
PARAMETER
MIN TYP MAX UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
-0.80
-
-
±100
-1
V
VDS = VGS, ID = -250μA
-
-
-
nA VDS = 0V, VGS= ±12V
-
VDS = -24V, VGS= 0V
μA
Zero Gate Voltage Drain Current
On-State Drain Current A
IDSS
-
-
-10
-
VDS = -24V, VGS= 0V, TJ=55°C
ID(ON)
-2
-
-
A
VDS = -5V, VGS= -4.5V
VGS= -4.5V, ID = -3.6A
VGS= -2.5V, ID = -2.8A
VDS= -5V,,ID = -3.6A
IS= -0.4A, VGS= 0V
-
57
89
-
Drain-Source On-Resistance A
RDS(ON)
mΩ
-
-
2
Forward Transconductance A
Diode Forward Voltage
gFS
-
S
V
VSD
-
-0.70
-
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
25
-
-
-
-
-
-
-
ID= -3.6A
2.4
3.9
nC VDS= -10V
VGS= -5V
Qgd
Td(ON)
Tr
7.6
VDS= -15V
6.8
ID= -1A
nS
VGEN= -10V
Turn-Off Delay Time
Fall Time
Td(OFF)
Tf
33.6
23.2
RG= 50Ω
Notes
a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Jul-2010 Rev. A
Page 2 of 2
相关型号：
©2020 ICPDF网 联系我们和版权申明