SMG2343 [SECOS]

-4.1A , -30V , RDS(ON) 45 m P-Channel Enhancement Mode MOSFET; -4.1A ， -30V ， RDS （ ON） 45米？ P沟道增强型MOSFET


型号：	SMG2343
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	-4.1A , -30V , RDS(ON) 45 m P-Channel Enhancement Mode MOSFET -4.1A ， -30V ， RDS （ ON） 45米？ P沟道增强型MOSFET
文件：	总4页 (文件大小：1325K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMG2343

-4.1A , -30V , R_DS(ON)45 mΩ

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

The SMG2343 uses advanced trench technology to

provide excellent on-resistance with low gate change.

The device is suitable for use as a load switch or in PWM

applications.

Top View

C B

FEATURES

ꢀ

Lower Gate Threshold Voltage

Small Package Outline

ꢀ

Millimeter

Min. Max.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

MARKING

2343

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

PACKAGE INFORMATION

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-4.1

Continuous Drain Current ³

I_D

-3.5

Pulsed Drain Current ¹

Power Dissipation

I_DM

P _D

-12

T_A=25°C

1.38

Linear Derating Factor

0.01

W / °C

°C

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~150

Thermal Resistance Rating

Maximum Junction to Ambient ³

R_θJA

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Aug-2011 Rev. A

Page 1 of 4

SMG2343

-4.1A , -30V , R_DS(ON)45 mΩ

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Symbol

Min.

Typ.

Max.

Parameter

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

BV_DSS

V_GS(th)

I_GSS

-30

V_GS=0, I_D= -250uA

V_DS=V_GS, I_D= -250uA

V_GS20V

-1.0

-2.0

Gate-Body Leakage Current

100

-1

=±

V_DS= -24V, V_GS=0

V_GS= -10V, I_D= -4.1A

V_GS= -4.5V, I_D= -3.0A

V_DS= -10V, I_D= -4A

Drain-Source Leakage Current

I_DSS

µA

-5

Drain-Source On-Resistance ²

Forward Transconductance

R_DS(ON)

g_fs

mΩ

Dynamic

Total Gate Charge²

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time²

Rise Time

Q_g

Q_gs

Q_gd

T_d(on)

T_r

15.2

5.5

V_DS= -24V,

V_GS= -10V,

I_D= -3A

8.6

12.2

36.6

20.8

590

V_DS= -15V,

V_GS= -10V,

R_G=6Ω,

R_D=15Ω,

I_D= -1A

Turn-off Delay Time

Fall Time

T_d(off)

T_f

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C_iss

C_oss

C_rss

V_SD

V_GS=0,V_DS= -25V,f=1.0MHz

Diode Forward Voltage ²

-1

I_S= -1A, V_GS=0, T_J=25°C

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width≦300µs, duty cycle≦2%.

3. Surface mounted on 1 in²copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Aug-2011 Rev. A

Page 2 of 4

SMG2343

-4.1A , -30V , R_DS(ON)45 mΩ

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Aug-2011 Rev. A

Page 3 of 4

SMG2343

-4.1A , -30V , R_DS(ON)45 mΩ

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Aug-2011 Rev. A

Page 4 of 4

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