SMG2340N [SECOS]
N-Channel Enhancement Mode Mos.FET; N沟道增强模式Mos.FET
| 型号： | SMG2340N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Mos.FET |
| 文件： | 总2页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2340N
5.2 A, 40 V, RDS(ON) 43 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low RDS(on) and ensure
minimal power loss and heat dissipation. Typical applications
are DC-DC converters and power management in portable and
battery-powered products such as computers, printer , PCMCIA
cards, cellular and cordless telephones.
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
FEATURES
D
Low RDS(on) provides higher efficiency and extends
battery life.
H
J
G
Low thermal impedance copper leadframe SC-59
saves board Space.
Millimeter
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
Min.
Max.
3.10
3.00
1.70
1.40
Fast switching speed.
High performance trench technology.
A
B
C
D
2.70
2.25
1.30
1.00
G
H
J
0.10
0.45
0.85
0.20
0.55
1.15
K
E
F
1.70
0.35
2.30
0.50
L
PACKAGE INFORMATION
Package
MPQ
3K
LeaderSize
1
2
SC-59
7’ inch
3
ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
±20
V
V
ID @ TA=25°C
ID @ TA=70°C
5.2
4.1
30
1.6
1.3
0.8
A
Continuous Drain Current 1
ID
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
IDM
IS
A
A
PD @ TA=25°C
PD @ TA=70°C
W
W
°C
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ 150
Thermal Resistance Data
t ≦ 5 sec
100
166
Maximum Junction to Ambient 1
Notes
RJA
°C / W
Steady State
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A
Page 1 of 2
SMG2340N
5.2 A, 40 V, RDS(ON) 43 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Symbol Min. Typ. Max. Unit
Test Conditions
VGS(th)
IGSS
1.0
-
-
±100
1
V
VDS=VGS, ID= 250uA
-
-
-
-
nA VDS= 0V, VGS= 20V
VDS= 32V, VGS= 0V
uA
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
-
-
25
-
VDS= 32V, VGS= 0V, TJ= 55°C
ID(on)
20
-
-
A
VDS = 5V, VGS= 10V
VGS= 10V, ID= 5.2A
VGS= 4.5V, ID= 3.7A
VDS= 15V, ID= 5.2A
IS= 2.3A, VGS= 0V
-
43
64
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gfs
-
40
0.7
S
V
VSD
-
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
-
4.0
1.1
1.4
16
5
-
-
-
-
-
-
-
VDS= 15V, VGS= 4.5V,
ID= 5.2A
nC
nS
VDD= 25V, VGEN= 10V,
RL= 25, ID= 1A
Turn-off Delay Time
Td(off)
Tf
23
3
Fall Time
Notes
1
2
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A
Page 2 of 2
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