SMG2340NE [SECOS]
N-Channel Enhancement MOSFET; N沟道增强型MOSFET型号: | SMG2340NE |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | N-Channel Enhancement MOSFET |
文件: | 总2页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMG2340NE
5.2 A, 40 V, RDS(ON) 43 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low RDS(on) and to ensure
minimal power loss and heat dissipation. Typical applications
are DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
D
FEATURES
H
J
G
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board
space.
Fast switching speed.
High performance trench technology.
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
0.10 REF.
0.40 REF.
Max.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
0.10
0.45
0.20
0.55
PACKAGE INFORMATION
K
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
Package
MPQ
3K
LeaderSize
SC-59
7’ inch
ESD
Protection
Diode
2KV
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
±20
V
V
TA=25°C
TA=70°C
5.2
Continuous Drain Current 1
Pulsed Drain Current 2
ID
A
4.1
IDM
IS
30
A
A
Continuous Source Current (Diode Conduction) 1
1.6
TA=25°C
Power Dissipation 1
TA=70°C
Operating Junction and Storage Temperature Range
1.3
PD
W
0.8
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Data
t≦5 sec
100
166
Maximum Junction to Ambient 1
RθJA
°C/W
Steady-State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A
Page 1 of 2
SMG2340NE
5.2 A, 40 V, RDS(ON) 43 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Static
Test Conditions
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1
-
-
-
±10
1
V
VDS = VGS, ID = 250μA
-
-
μA VDS = 0V, VGS= 20V
-
VDS = 32V, VGS= 0V
μA
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
-
-
25
-
VDS = 32V, VGS= 0V, TJ=55°C
ID(ON)
20
-
-
A
VDS = 5V, VGS= 10V
VGS= 10V, ID = 5.2A
VGS= 4.5V, ID = 4.2A
VDS= 15V,,ID = 5.2A
IS= 2.3A, VGS= 0V
-
43
50
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gFS
-
40
0.7
S
V
VSD
-
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
4.0
-
-
-
-
-
-
-
ID= 5.2A
1.1
1.4
16
5
nC
nS
VDS= 15V
VGS= 4.5V
Qgd
Td(ON)
Tr
ID= 1A, VDD= 25V
VGEN= 10V
Turn-Off Delay Time
Fall Time
Td(OFF)
Tf
23
3
RL= 25Ω
Notes
1. Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A
Page 2 of 2
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