SMG2358N [SECOS]

N-Channel Enhancement Mode Mos.FET; N沟道增强模式Mos.FET


型号：	SMG2358N
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	N-Channel Enhancement Mode Mos.FET N沟道增强模式Mos.FET
文件：	总2页 (文件大小：114K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMG2358N

2.8 A, 60 V, R_DS(ON)92 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a High Cell Density

trench process to provide Low R_DS(on)and to ensure minimal power

loss and heat dissipation. Typical applications are DC-DC converters

and power management in portable and battery-powered products

such as computers, printers, PCMCIA cards, cellular and cordless

telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends battery life.



Low thermal impedance copper leadframe SC-59 saves

board space.



Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

Min.

Max.

3.10

3.00

1.70

1.40

2.70

2.25

1.30

1.00

PACKAGE INFORMATION

0.10

0.45

0.85

0.20

0.55

1.15

Package

MPQ

LeaderSize

1.70

0.35

2.30

0.50

SC-59

7’ inch

ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)

Ratings

Maximum

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

I_D@ T_A=25°C

I_D@ T_A=70°C

2.8

1.8

±15

1.7

Continuous Drain Current ¹

I_D

Pulsed Drain Current ²

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

I_DM

I_S

P_D@ T_A=25°C

P_D@ T_A=70°C

1.3

0.8

-55 ~ 150

°C

P_D

Operating Junction and Storage Temperature Range

Tj, Tstg

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Unit

t ≦ 5 sec

R_JA

100

166

Maximum Junction to Ambient ¹

°C / W

Steady State

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

02-Dec-2010 Rev. B

Page 1 of 2

SMG2358N

2.8 A, 60 V, R_DS(ON)92 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Gate-Threshold Voltage

Gate-Body Leakage

Symbol Min. Typ. Max. Unit

Test Conditions

V_GS(th)

I_GSS

1.0

±100

V_DS=V_GS, I_D= 250uA

uA V_DS= 0V, V_GS= ±20V

V_DS= 48V, V_GS= 0V

Zero Gate Voltage Drain Current

On-State Drain Current ¹

I_DSS

V_DS= 48V, V_GS= 0V, T_J= 55°C

I_D(on)

V_DS= 5V, V_GS= 10V

V_GS= 10V, I_D= 3.1A

V_GS= 4.5V, I_D= 2.9A

V_DS= 4.5V, I_D= 3.1A

I_S= 1.7A, V_GS= 0V

107

Drain-Source On-Resistance ¹

R_DS(ON)

mΩ

Forward Transconductance ¹

Diode Forward Voltage

g_fs

V_SD

1.10

DYNAMIC ²

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Rise Time

Q_g

Q_gs

Q_gd

T_d(on)

T_r

3.6

1.8

1.3

V_DS= 30V, V_GS= 5V,

I_D= 3.1A

V_DD= 30V, V_GEN= 10V,

R_L= 30, I_D= 1A

Turn-off Delay Time

Fall Time

T_d(off)

T_f

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

02-Dec-2010 Rev. B

Page 2 of 2

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