SSD30P06-45D [SECOS]
P-Ch Enhancement Mode Power MOSFET; P沟道增强型功率MOSFET
| 型号： | SSD30P06-45D |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Ch Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSD30P06-45D
P-Ch Enhancement Mode Power MOSFET
28A, -60V, RDS(ON) 49mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
A
B
C
D
Extended VGS range (±25) for battery pack applications.
G E
PRODUCT SUMMARY
PRODUCT SUMMARY
K
J
H F
N
O
P
ID(A)
28
24
VDS(V)
-60
RDS(on) m(
49@VGS= -10V
60@VGS= -4.5V
Drain
M
Gate
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
6.8
5.50
2.40
0.58
7.3
J
K
M
N
O
P
2.30 REF.
0.70
0.50
0.9
0.90
1.1
1.6
Source
0
0.43
0.15
0.58
2.40
5.40
0.8
3.0
6.2
1.20
G
H
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATINGS
UNIT
Drain-Source Voltage
-60
±20
V
V
Gate-Source Voltage
VGS
Continuous Drain Current a
Pulsed Drain Current b
ID @TA=25℃
IDM
61
A
±40
A
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
IS
-30
A
PD @TA=25℃
TJ, TSTG
50
W
°C
Operating Junction and Storage Temperature Range
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
RθJC
50
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
3.0
Notes：
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Aug-2010 Rev.A
Page 1 of 4
SSD30P06-45D
P-Ch Enhancement Mode Power MOSFET
28A, -60V, RDS(ON) 49mΩ
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
SYMBO
PARAMETER
MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
-1
-
-
-
±100
-1
VDS= VGS, ID = -250 μA
-
nA VDS = 0V, VGS= ±20V
-
-
VDS= -48V, VGS= 0V
μA
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
ID(on)
-
-
-10
-
VDS= -48V, VGS=0V, TJ=55°C
-20
-
A
VDS = -5V, VGS= -10V
VGS= -10V, ID= -28A
VGS= -4.5V, ID= -24A
VDS= -15V, ID= -28A
IS= -2.5 A, VGS= 0 V
-
-
-
-
-
49
60
-
Drain-Source On-Resistance a
RDS(ON)
mΩ
-
Forward Transconductance a
Diode Forward Voltage
gfs
8
-
S
V
VSD
-1.2
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
-
18
5
-
-
-
-
-
-
-
V
DS = -30 V
nC VGS = -4.5 V
ID = -28 A
2
8
VDD= -30 V
ID= -1 A
10
35
12
nS VGEN = -10 V
RL= 30
Turn-off Delay Time
Td(off)
Tf
RG= 6
Fall Time
Notes
a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Aug-2010 Rev.A
Page 2 of 4
SSD30P06-45D
P-Ch Enhancement Mode Power MOSFET
28A, -60V, RDS(ON) 49mΩ
Elektronische Bauelemente
CHARACTERISTIC CURVE
15
12
9
15
12
9
TA = -55oC
VGS = -10V
25oC
-4.5V
125oC
6
6
3
3
0
0
1
2
3
4
5
0
1
2
3
4
5
V
GS - Gate-to-Source Voltage (V)
V
DS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2400
2000
1600
1200
800
400
0
1.8
1.6
1.4
1.2
1
Ciss
Coss
Crss
-4.5V
-10V
0.8
0
5
10 15 20 25 30
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
2
-10
-8
-6
-4
-2
0
VGS = -10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
6
12
18
24
30
36
-50
-25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Qg, Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Aug-2010 Rev.A
Page 3 of 4
SSD30P06-45D
P-Ch Enhancement Mode Power MOSFET
28A, -60V, RDS(ON) 49mΩ
Elektronische Bauelemente
CHARACTERISTIC CURVE
100
10
0.4
0.3
0.2
0.1
0
TA = 125oC
25oC
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
50
40
30
20
10
1.9
ID = -250
A
μ
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0
-50
-25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (oC)
Time ( sec)
Threshold Voltage
Single Pulse Power
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
RθJA = 125oC/W
0.2
0.1
0.1
0.05
P(pk)
TA = P * RθJA(t)
DutyCycle, D = t1 / t2
t1
0.02
0.01
t2
0.01
SINGLE PULSE
0.001
0.001
0.0001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Aug-2010 Rev.A
Page 4 of 4
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