SSG4435 [SECOS]
P-Channel Enhancement Mode Power Mos.FET; P沟道增强模式电源Mos.FET
| 型号： | SSG4435 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement Mode Power Mos.FET |
| 文件： | 总5页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4435
-8A, -30V,RDS(ON) 20m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
o
The SSG4435 provide the designer with the best Combination of fast switching,
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial
0.375 REF
6.20
5.80
0.25
3.80
4.00
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
1.27Typ.
0.35
0.49
0.100.25
4.80
5.00
1.35
1.75
o
8 o
Features
Dimensions in millimeters
* Low on-resistance
D
D
D
D
D
8
6
5
7
* Simple drive requirement
* Fast switching Characteristic
4435SC
Date Code
G
2
1
3
4
S
S
S
S
G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
Unit
V
V
A
-30
±20
-8
Gate-Source Voltage
VGS
oC
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 1
ID@TA=25
oC
-6
ID@TA=70
IDM
A
A
-50
Total Power Dissipation
PD@TA=25o
C
2.5
0.02
W
W/oC
oC
Linear Derating Factor
-55~+150
Tj, Tstg
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
oC /W
Rthj-a
Thermal Resistance Junction-ambient (Max)
50
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 5
SSG4435
Ω
-8A, -30V,RDS(ON) 20m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
V
VGS=0V, ID=-250uA
-30
_
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
oC
V/oC
V
_
Reference to 25 ,ID=-1mA
BVDS/ Tj
-0.037
_
VGS(th)
-1.0
_
VDS=VGS, ID=-250uA
-3.0
_
_
±
±
VGS= 20V
100
nA
uA
uA
IGSS
IDSS
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25o )
C
_
VDS=-30V,VGS=0
VDS=-24V,VGS=0
-1
Drain-Source Leakage Current (Tj=70o )
C
_
_
_
_
_
-5
20
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-5A
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
35
_
Total Gate Charge2
Qg
47
ID=-4.6A
VDS=-15V
VGS=-10V
_
_
_
_
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Qgs
9.5
8
_
Qgd
Td(ON)
Tr
_
_
Turn-on Delay Time2
Rise Time
30
20
VDD=-15V
ID=-1A
_
_
VGS=-10V
nS
_
Ω
RG=6
Td(Off)
Turn-off Delay Time
Fall Time
120
80
Ω
RD=15
_
_
_
_
_
T
f
_
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2800
1400
Ciss
Coss
Crss
VGS=0V
VDS=-15V
f=1.0MHz
_
_
pF
S
350
_
_
VDS=-10V, ID=-8A
Gfs
Forward Transconductance
20
Source-Drain Diode
Typ.
Parameter
Symbol
VDS
Is
Max.
-1.2
-2.1
-50
Min.
Unit
Test Condition
_
Forward On Voltage2
IS=-2.1A, VGS=0V.
V
-0.75
_
_
_
A
A
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
VD=VG=0V, VS=-1.2V
_
ISM
Notes: 1.Pulse width limited by safe operating area.
≦
≦
2.Pulse width 300us, dutycycle 2%.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 5
SSG4435
Ω
-8A, -30V,RDS(ON) 20m
Elektronische Bauelemente
Characteristics Curve
P-Channel Enhancement Mode Power Mos.FET
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Type Power Dissipation
Fig 5. Maximum Drain Current
v.s. Case Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 5
SSG4435
Ω
-8A, -30V,RDS(ON) 20m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 5
SSG4435
Ω
-8A, -30V,RDS(ON) 20m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 5 of 5
相关型号：
SSG4502CE
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
SECOS
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