SSG4499P [SECOS]
P-Ch Enhancement Mode Power MOSFET; P沟道增强型功率MOSFET
| 型号： | SSG4499P |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Ch Enhancement Mode Power MOSFET |
| 文件： | 总2页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4499P
-6.8 A, -60 V, RDS(ON) 45 m
P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOP-8
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation.
B
L
D
M
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
A
C
J
N
E
K
H
G
F
Fast switching speed.
High performance trench technology.
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
APPLICATION
A
B
C
D
E
F
5.80
4.80
3.80
0°
6.20
5.00
4.00
8°
H
J
K
L
M
N
0.35
0.49
0.375 REF.
DC-DC converters and power management
45°
in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular
and cordless telephones.
1.35
0.10
1.75
0.25
0.40
0.90
0.19
0.25
0.25 REF.
G
1.27 TYP.
PACKAGE INFORMATION
D
D
S
S
Package
MPQ
Leader Size
D
D
S
SOP-8
2.5K
13’ inch
G
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-60
V
±20
-6.8
V
A
TA = 25°C
TA = 70°C
Continuous Drain Current 1
ID
-6.3
A
Pulsed Drain Current 2
IDM
IS
-30
A
Continuous Source Current (Diode Conduction) 1
TA = 25°C
TA = 70°C
Operating Junction & Storage Temperature Range
-2.5
A
3.1
W
W
°C
Total Power Dissipation 1
PD
2.6
TJ, TSTG
-55 ~ 150
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient (Max.) 1
t ≦ 10 sec
RθJA
50
°C / W
Notes:
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Apr-2011 Rev. A
Page 1 of 2
SSG4499P
-6.8 A, -60 V, RDS(ON) 45 m
P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Static
Max.
Unit
Teat Conditions
Gate-Threshold Voltage
VGS(th)
IGSS
-1
-
-
-
±100
-1
V
VDS= VGS, ID= -250μA
Gate-Body Leakage Current
-
nA
VDS=0, VGS= ±20V
-
-
VDS= -48V, VGS=0
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
ID(on)
μA
A
-
-
-10
-
VDS= -48V, VGS=0, TJ=55°C
VDS= -5V, VGS= -10V
-20
-
-
-
-
-
-
45
60
-
VGS= -10V, ID= -6.8A
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
VGS= -4.5V, ID= -5.9A
VDS= -15V, ID= -6.8A
IS= -2.5A, VGS=0
Forward Transconductance 1
Diode Forward Voltage
gfs
8
-
S
V
VSD
-1.2
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
-
18
5
-
-
-
-
-
-
-
ID= -6.8A
nC
nS
V
V
DS= -30V
GS= -4.5V
2
8
VDD= -30V
ID= -1A
10
35
12
VGEN= -10V
Turn-Off Delay Time
Td(off)
Tf
RL=30Ω
RG=6Ω
Fall Time
Notes:
1.
2.
Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Apr-2011 Rev. A
Page 2 of 2
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