SSG4502C [SECOS]
N & P-Ch Enhancement Mode Power MOSFET; N' P沟道增强型功率MOSFET
| 型号： | SSG4502C |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N & P-Ch Enhancement Mode Power MOSFET |
| 文件： | 总6页 (文件大小：1029K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4502C
N-Ch: 10 A, 30 V, RDS(ON) 16 m
P-Ch: -8.5 A, -30 V, RDS(ON) 23 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOP-8
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
DS(on) and to ensure minimal power loss and heat
B
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless
telephones
L
D
M
A
C
J
N
E
FEATURES
K
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space
Fast switching speed
H
G
F
High performance trench technology
Millimeter
Min. Max.
5.8 6.20
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
H
J
K
L
M
N
0.35
0.51
4.80
3.80
0°
5.00
4.00
8°
0.375 REF.
PACKAGE INFORMATION
45°
1.35
0.10
1.75
0.25
0.50
0.93
Package
MPQ
LeaderSize
0.19
0.25
0.25 REF.
G
1.27 TYP.
SOP-8
2.5K
13’ inch
D
S
G
S
D
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
N- Ch
30
P- Ch
-30
Unit
V
Gate-Source Voltage
VGS
20
-20
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
10
-8.5
-6.8
±50
-2.1
2.1
A
Continuous Drain Current 1
8.1
±50
2.3
2.1
1.3
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
A
IS
A
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
W
W
°C
Total Power Dissipation 1
1.3
Operating Junction & Storage Temperature Range
-55 ~ 150
Thermal Resistance Ratings
t≦ 10 sec
RθJA
62.5
110
°C / W
°C / W
Maximum Junction-to-Ambient 1
Steady State
Notes:
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 1 of 6
SSG4502C
N-Ch: 10 A, 30 V, RDS(ON) 16 m
P-Ch: -8.5 A, -30 V, RDS(ON) 23 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Ch
Min.
Typ.
Static
Max.
Unit
Teat Conditions
N
30
-
-
-
VGS= 0V, ID= 250μA
Drain-Source Breakdown Voltage V(BR)DSS
V
V
P
N
P
N
P
N
P
N
P
-30
-
VGS= 0V, ID= -250μA
VDS= VGS, ID= 250μA
VDS= VGS, ID= -250μA
VDS= 0V, VGS= 20V
VDS= 0V, VGS= -20V
VDS= 24V, VGS= 0V
VDS= -24V, VGS= 0V
VDS= 5V, VGS= 10V
VDS= -5V, VGS= -10V
VGS= 10V, ID= 10A
1
-
-
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
-1
-
-
±100
±100
1
-
-
nA
μA
A
-
-
-
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
-
-
-1
20
-
-
ID(on)
-50
-
-
-
-
-
-
-
-
-
16
20
23
33
-
N
P
-
VGS= 4.5V, ID= 8.4A
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
mΩ
-
VGS= -10V, ID= -8.5A
VGS= -4.5V, ID= -6.8A
VDS= 15V, ID= 10A
VDS= -15V, ID= -9.5A
-
N
P
40
gfs
S
31
-
Dynamic 2
N
P
N
P
N
P
N
P
N
P
N
P
N
P
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
13
3.3
5.8
4.5
12
20
15
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
N-Channel
ID= 10A, VDS= 15V, VGS= 4.5V
nC
P-Channel
ID= -10A, VDS= -15V, VGS= -4.5V
N-Channel
VDD= 15V, VGS= 10V
ID= 1A, RGEN= 25Ω
16
70
62
20
46
nS
P-Channel
Turn-Off Delay Time
Td(off)
Tf
VDD= -15V, VGS= -10V
ID= -1A, RGEN= 15Ω
Fall Time
Notes:
1.
2.
Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 2 of 6
SSG4502C
N-Ch: 10 A, 30 V, RDS(ON) 16 m
P-Ch: -8.5 A, -30 V, RDS(ON) 23 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 3 of 6
SSG4502C
N-Ch: 10 A, 30 V, RDS(ON) 16 m
P-Ch: -8.5 A, -30 V, RDS(ON) 23 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 4 of 6
SSG4502C
N-Ch: 10 A, 30 V, RDS(ON) 16 m
P-Ch: -8.5 A, -30 V, RDS(ON) 23 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES (P-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 5 of 6
SSG4502C
N-Ch: 10 A, 30 V, RDS(ON) 16 m
P-Ch: -8.5 A, -30 V, RDS(ON) 23 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 6 of 6
相关型号：
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