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SSG4502CE [SECOS]

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m; N' P沟道增强型功率MOSFET N -CH ： 10.0 A， 30 V ， RDS （ ON） 16米？ P -CH ： -8.5A ， -30 V， RDS （ ON） 23米？
SSG4502CE
型号： SSG4502CE
厂家： SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述：

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
N' P沟道增强型功率MOSFET N -CH ： 10.0 A， 30 V ， RDS （ ON） 16米？ P -CH ： -8.5A ， -30 V， RDS （ ON） 23米？
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中文：  中文翻译
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SSG4502CE  
N & P-Ch Enhancement Mode Power MOSFET  
N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ  
P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOP-8  
DESCRIPTION  
These miniature surface mount MOSFETs utilize a  
B
high cell density trench process to provide low RDS(on)  
and to ensure minimal power loss and heat dissipation.  
L
D
FEATURES  
M
ꢀ
Low RDS(on) provides higher efficiency and  
extends battery life.  
A
C
J
ꢀ
Low thermal impedance copper leadframe  
SOP-8 saves board space.  
N
E
K
ꢀ
ꢀ
Fast Switch Speed.  
High performance trench technology.  
H
G
F
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
Max.  
APPLICATION  
A
B
C
D
E
F
5.80  
4.80  
3.80  
0°  
6.20  
5.00  
4.00  
8°  
H
J
K
L
M
N
0.35  
0.49  
0.375 REF.  
DC-DC converters and power management in portable  
and battery-powered products such as computers, printers,  
PCMCIA cards, cellular and cordless telephones.  
45°  
1.35  
0.10  
1.75  
0.25  
0.40  
0.19  
0.90  
0.25  
0.25 REF.  
G
1.27 TYP.  
PACKAGE INFORMATION  
S1  
G1  
S2  
G2  
D1  
D1  
Package  
MPQ  
Leader Size  
SOP-8  
2.5K  
13 inch  
D2  
D2  
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Ratings  
Parameter  
Symbol  
Unit  
N-Ch  
30  
P-Ch  
-30  
Drain-Source Voltage  
VDS  
VGS  
V
V
Gate-Source Voltage  
20  
-25  
TA=25°C  
TA=70°C  
10  
-8.5  
-6.8  
-50  
A
Continuous Drain Current1  
ID  
8.1  
50  
A
Pulsed Drain Current2  
IDM  
IS  
A
Continuous Source Current (Diode Conduction) 1  
2.3  
2.1  
1.3  
-2.1  
2.1  
A
TA=25°C  
Total Power Dissipation1  
W
W
°C  
PD  
TA=70°C  
1.3  
Operating Junction and Storage Temperature Range  
TJ, TSTG  
-55~150  
Thermal Resistance Ratings  
t<=10sec  
62.5  
110  
°C / W  
°C / W  
Maximum Junction-Ambient 1  
RθJA  
Steady State  
Notes：  
1. Surface Mounted on 1” x 1” FR4 Board.  
2. Pulse width limited by maximum junction temperature  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Dec-2011 Rev. A  
Page 1 of 7  
SSG4502CE  
N & P-Ch Enhancement Mode Power MOSFET  
N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ  
P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ  
Elektronische Bauelemente  
N-CHANNEL ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol Min. Typ. Max. Unit  
Static  
Test Conditions  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
V(BR)DSS  
VGS(th)  
IGSS  
30  
-
-
-
-
V
V
VGS=0, ID=250µA  
VDS=VGS, ID=250µA  
1
Gate-Source Leakage Current  
Drain-Source Leakage Current  
On-State Drain Current1  
-
-
±10  
1
nA VGS= 20V, VDS=0  
IDSS  
-
-
µA VDS=24V, VGS=0  
ID(ON)  
-
-
20  
16  
20  
-
A
VDS=5V, VGS=10V  
VGS=10V, ID=10A  
VGS=4.5V, ID=8.4A  
VDS=15V, ID=10A  
-
-
Static Drain-Source On-Resistance1  
RDS(ON)  
mΩ  
-
-
Forward Transconductance1  
gfs  
-
40  
5
S
A
Pulsed Source Current (Body Diode) 1  
ISM  
-
-
Dynamic  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain (“Miller”) Change  
Turn-on Delay Time  
Rise Time  
Qg  
Qgs  
Qgd  
Td(on)  
Tr  
-
-
-
-
-
-
-
12  
3.3  
4.5  
20  
9
ID=10A  
VDS=15V  
VGS=4.5V  
-
-
-
-
-
-
nC  
nS  
VDD=15V  
VGS=10V  
ID=1A  
Turn-off Delay Time  
Fall Time  
Td(off)  
Tf  
70  
20  
RGEN=25Ω  
Notes:  
1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.  
2. Guaranteed by design, not subject to production testing.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Dec-2011 Rev. A  
Page 2 of 7  
SSG4502CE  
N & P-Ch Enhancement Mode Power MOSFET  
N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ  
P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ  
Elektronische Bauelemente  
P-CHANNEL ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol Min. Typ. Max. Unit  
Static  
Test Conditions  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
V(BR)DSS  
VGS(th)  
IGSS  
-30  
-
-
-
-
V
V
VGS=0, ID=-250µA  
VDS=VGS, ID=-250µA  
-1  
Gate-Source Leakage Current  
Drain-Source Leakage Current  
On-State Drain Current1  
-
-
±10  
-1  
-
nA VGS=-20V, VDS=0  
IDSS  
-
-
µA VDS=-24V, VGS=0  
ID(ON)  
-50  
-
A
VDS=-5V, VGS=-10V  
VGS=-10V, ID=-8.5A  
VGS=-4.5V, ID=-6.8A  
VDS=-15V, ID=-9.5A  
-
-
23  
33  
-
Static Drain-Source On-Resistance1  
RDS(ON)  
mΩ  
-
-
Forward Transconductance1  
gfs  
-
31  
5
S
A
Pulsed Source Current (Body Diode) 1  
ISM  
-
-
Dynamic  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain (“Miller”) Change  
Turn-on Delay Time  
Rise Time  
Qg  
Qgs  
Qgd  
Td(on)  
Tr  
-
-
-
-
-
-
-
13  
5.8  
12  
15  
16  
62  
46  
ID=-10A  
VDS=-15V  
VGS=-4.5V  
-
-
-
-
-
-
nC  
nS  
VDD=-15V  
VGS=-10V  
ID=-1A  
Turn-off Delay Time  
Fall Time  
Td(off)  
Tf  
RGEN=15Ω  
Notes:  
1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.  
2. Guaranteed by design, not subject to production testing.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Dec-2011 Rev. A  
Page 3 of 7  
SSG4502CE  
N & P-Ch Enhancement Mode Power MOSFET  
N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ  
P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ  
Elektronische Bauelemente  
CHARACTERISTIC CURVE (N-Ch)  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Dec-2011 Rev. A  
Page 4 of 7  
SSG4502CE  
N & P-Ch Enhancement Mode Power MOSFET  
N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ  
P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ  
Elektronische Bauelemente  
CHARACTERISTIC CURVE (N-Ch)  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Dec-2011 Rev. A  
Page 5 of 7  
SSG4502CE  
N & P-Ch Enhancement Mode Power MOSFET  
N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ  
P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ  
Elektronische Bauelemente  
CHARACTERISTIC CURVE (P-Ch)  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Dec-2011 Rev. A  
Page 6 of 7  
SSG4502CE  
N & P-Ch Enhancement Mode Power MOSFET  
N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ  
P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ  
Elektronische Bauelemente  
CHARACTERISTIC CURVE (P-Ch)  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Dec-2011 Rev. A  
Page 7 of 7  

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