SSG4512CE [SECOS]

N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m; N' P沟道增强型功率MOSFET N -CH ： 6.9 A， 30 V ， RDS （ ON） 31米？ P -CH ： -5.2 A， -30 V， RDS （ ON） 52米？


型号：	SSG4512CE
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m N' P沟道增强型功率MOSFET N -CH ： 6.9 A， 30 V ， RDS （ ON） 31米？ P -CH ： -5.2 A， -30 V， RDS （ ON） 52米？
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SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, R_DS(ON)31 mΩ

Elektronische Bauelemente

P-Ch: -5.2 A, -30 V, R_DS(ON)52 mΩ

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOP-8

DESCRIPTION

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low R_DS(on)

and to ensure minimal power loss and heat dissipation.

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and

extends battery life.

ꢀ

Low thermal impedance copper leadframe

SOP-8 saves board space.

ꢀ

Fast Switch Speed.

High performance trench technology.

Millimeter

Min. Max.

Millimeter

REF.

APPLICATION

Min.

Max.

5.80

4.80

3.80

0°

6.20

5.00

4.00

8°

0.35

0.49

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

0.375 REF.

45°

1.35

0.10

1.75

0.25

0.40

0.90

0.19

0.25

0.25 REF.

1.27 TYP.

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

2.5K

13 inch

MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Ratings

Parameter

Symbol

Unit

N-Ch

P-Ch

-30

Drain-Source Voltage

V_DS

V_GS

Gate-Source Voltage

±20

6.9

5.4

±20

-5.2

-6.8

-20

T_A=25°C

T_A=70°C

Continuous Drain Current¹

I_D

Pulsed Drain Current²

I_DM

I_S

Continuous Source Current (Diode Conduction) ¹

1.3

2.1

1.3

-1.3

2.1

T_A=25°C

Total Power Dissipation¹

°C

P_D

T_A=70°C

1.3

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

Thermal Resistance Ratings

Maximum Junction-ambient ¹

t<=5 sec

R_θJA

R_θJC

°C / W

Maximum Junction-Case ¹

Notes：

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Dec-2011 Rev. A

Page 1 of 7

SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, R_DS(ON)31 mΩ

Elektronische Bauelemente

P-Ch: -5.2 A, -30 V, R_DS(ON)52 mΩ

N-CHANNEL ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol Min. Typ. Max. Unit

Static

Test Conditions

Gate Threshold Voltage

V_GS(th)

I_GSS

±100

V_DS=V_GS, I_D=250µA

Gate-Source Leakage Current

Drain-Source Leakage Current

On-State Drain Current¹

nA V_GS= 8V, V_DS=0

I_DSS

µA V_DS=24V, V_GS=0

I_D(ON)

mΩ

V_DS=5V, V_GS=10V

V_GS=10V, I_D=6.9A

V_GS=4.5V, I_D=6A

V_DS=15V, I_D=6.9A

Static Drain-Source On-Resistance¹

Forward Transconductance¹

R_DS(ON)

g_fs

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain (“Miller”) Change

Turn-on Delay Time

Rise Time

Q_g

Q_gs

Q_gd

T_d(on)

T_r

4.0

1.1

1.4

I_D=6.9A

V_DS=15V

V_GS=10V

_DD=15V

V_GS=10V

I_D=1A

R_GEN=6Ω

Turn-off Delay Time

Fall Time

T_d(off)

T_f

Notes:

1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Dec-2011 Rev. A

Page 2 of 7

SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, R_DS(ON)31 mΩ

Elektronische Bauelemente

P-Ch: -5.2 A, -30 V, R_DS(ON)52 mΩ

P-CHANNEL ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol Min. Typ. Max. Unit

Static

Test Conditions

Gate Threshold Voltage

V_GS(th)

I_GSS

-1

±100

-1

V_DS=V_GS, I_D= -250µA

Gate-Source Leakage Current

Drain-Source Leakage Current

On-State Drain Current¹

nA V_GS= -8V, V_DS=0

I_DSS

µA V_DS= -24V, V_GS=0

I_D(ON)

-20

mΩ

V_DS= -5V, V_GS= -10V

V_GS= -10V, I_D= -5.2A

V_GS= -4.5V, I_D= -4.2A

V_DS= -15V, I_D= -5.2A

Static Drain-Source On-Resistance¹

Forward Transconductance¹

R_DS(ON)

g_fs

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain (“Miller”) Change

Turn-on Delay Time

Rise Time

Q_g

Q_gs

Q_gd

T_d(on)

T_r

2.2

1.7

I_D= -5.2A

V_DS= -15V

V_GS= -10V

_DD= -15V

2.8

53.6

V_GS= -10V

I_D= -1A

R_GEN=6Ω

Turn-off Delay Time

Fall Time

T_d(off)

T_f

Notes:

1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Dec-2011 Rev. A

Page 3 of 7

SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, R_DS(ON)31 mΩ

Elektronische Bauelemente

P-Ch: -5.2 A, -30 V, R_DS(ON)52 mΩ

CHARACTERISTIC CURVE (N-Ch)

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Dec-2011 Rev. A

Page 4 of 7

SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, R_DS(ON)31 mΩ

Elektronische Bauelemente

P-Ch: -5.2 A, -30 V, R_DS(ON)52 mΩ

CHARACTERISTIC CURVE (N-Ch)

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Dec-2011 Rev. A

Page 5 of 7

SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, R_DS(ON)31 mΩ

Elektronische Bauelemente

P-Ch: -5.2 A, -30 V, R_DS(ON)52 mΩ

CHARACTERISTIC CURVE (P-Ch)

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Dec-2011 Rev. A

Page 6 of 7

SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, R_DS(ON)31 mΩ

Elektronische Bauelemente

P-Ch: -5.2 A, -30 V, R_DS(ON)52 mΩ

CHARACTERISTIC CURVE (P-Ch)

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Dec-2011 Rev. A

Page 7 of 7

SSG4512CE [SECOS]

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